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1. 发明专利

JP2014239257A アバランシ・フォトダイオード有权
标题翻译： AVALANCHE光电
公开(公告)号：JP2014239257A
公开(公告)日：2014-12-18
申请号：JP2014184271
申请日：2014-09-10
申请人： Nttエレクトロニクス株式会社 , Ntt Electornics Corp , 日本電信電話株式会社 , Nippon Telegr & Teleph Corp
发明人： ISHIBASHI TADAO , ANDO SEIGO , NADA MASAHIRO , MURAMOTO YOSHIFUMI , YOKOYAMA HARUKI
IPC分类号： H01L31/107
摘要：【課題】メサ表面に由来する暗電流を低減することができるAPDを提供することを目的とする。【解決手段】APD301は、半絶縁性基板1と、半絶縁性基板1面上に、p形電極層2、p形光吸収層3A、低不純物濃度の光吸収層3B、バンドギャップ傾斜層4、p形電界制御層5、なだれ増倍層6、n形電界制御層7A、及び低不純物濃度の電子走行層7Bの順で積層された第1積層構成からなる第1メサ101と、積層方向から見て、外周が第1メサ101の外周の内側にあり、電子走行層7B側の表面上に、n形電極バッファ層8A、及びn形電極層8Bの順で積層された第2積層構成からなる第2メサ102と、p形電界制御層5より第2メサ102側にある層の、第1メサ101の外周の内側で第2メサ102の外周を取り囲む包囲部分14に形成され、バイアス印加時にp形電界制御層5の包囲部分が空乏化することを防止する空乏化抑制領域11と、を備える。【選択図】図1
摘要翻译：要解决的问题：提供能够减少由台面表面产生的暗电流的APD。解决方案：APD 301包括半绝缘基板1; 第一台面101由第一层叠结构构成，其中p型电极层2，p型光吸收层3A，杂质浓度低的光吸收层3B，带隙倾斜层4，p型电在半绝缘基板1上依次层叠具有低杂质浓度的场控制层5，雪崩倍增层6，n型电场控制层7A和电子转移层7B。第二台面102，其从周向位于第一台面101的外周的内侧，从层叠方向观察，该第二台面102由第二层叠结构构成，其中n型电极缓冲层8A和n型电极层 8B按顺序层压在电子转移层7B侧的表面上; 以及耗尽抑制区域11，其形成在封装在位于p型电场控制层5的第二台面102侧的层中的第二台面102的外周的封套部14中，第一台面101，并且当施加偏压时防止p型电场控制层5中的包络部分耗尽。

2. 发明专利

JP2012156391A Optical semiconductor device 有权
标题翻译：光学半导体器件
公开(公告)号：JP2012156391A
公开(公告)日：2012-08-16
申请号：JP2011015580
申请日：2011-01-27
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： DOI YOSHIYUKI , MURAMOTO YOSHIFUMI , OOYAMA TAKAHARU
IPC分类号： H01L31/10
CPC分类号： H01L27/1446 , H01L31/0203 , H01L31/022408 , H01L31/02327 , H01L31/105 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a compact and simple optical semiconductor device which sufficiently reduces crosstalk (leakage current) between light receiving elements.SOLUTION: In a semiconductor device, crosstalk onto an adjacent light receiving element can be easily suppressed, and error occurred when detecting light intensity of an optical semiconductor device can be reduced because a back electrode is a mirror surface shaped thin film. Contact resistance on a back surface can be reduced by installing an ohmic electrode on a patterned back electrode or a bottom part of an insulating film with respect to the entire back surface. Additionally, the crosstalk can be improved by using an optical semiconductor element with a two-dimensional arrangement, and by using the mirror surface shaped thin film as the back electrode. By storing the optical semiconductor element in a casing in a state of having high airtightness, the optical semiconductor element can be protected from external environment, thereby ensuring excellent humidity resistance and high reliability.
摘要翻译：要解决的问题：提供一种紧凑且简单的光学半导体器件，其充分降低光接收元件之间的串扰（漏电流）。解决方案：在半导体器件中，可以容易地抑制相邻的光接收元件的串扰，并且由于背面电极是镜面形状的薄膜，所以可以减少检测光学半导体器件的光强度时的误差。相对于整个后表面，在图案化的背面电极或绝缘膜的底部上安装欧姆电极，能够降低背面的接触电阻。此外，通过使用具有二维排列的光学半导体元件，并且通过使用镜面形状的薄膜作为背面电极，可以提高串扰。通过将光半导体元件保持在具有高气密性的状态的壳体中，可以保护光半导体元件免受外部环境的影响，从而确保优异的耐湿性和高可靠性。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012054477A Avalanche photodiode 有权
标题翻译： AVALANCHE光电
公开(公告)号：JP2012054477A
公开(公告)日：2012-03-15
申请号：JP2010197155
申请日：2010-09-02
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： ISHIBASHI TADAO , ANDO SEIGO , NADA MASAHIRO , MURAMOTO YOSHIFUMI , YOKOYAMA HARUKI
IPC分类号： H01L31/107
CPC分类号： H01L31/035281 , H01L31/03046 , H01L31/1075
摘要： PROBLEM TO BE SOLVED: To provide an APD which can reduce a dark current resulting from a mesa surface or the shape of an electrode layer.SOLUTION: An APD 301 includes a semi-insulated substrate 1; a first mesa 101 constituted with a first laminate structure in which a p-type electrode layer 2, a p-type light absorption layer 3A, a light absorption layer 3B having low impurity concentration, a bandgap inclination layer 4, a p-type electric field control layer 5, an avalanche multiplication layer 6, an n-type electric field control layer 7A, and an electron transit layer 7B having low impurity concentration are laminated on the semi-insulated substrate 1 in that order; and a second mesa 102, whose outer periphery lies inside the outer periphery of the first mesa 101 as viewed from the laminated direction, which constituted with a second laminate structure in which an n-type electrode buffer layer 8A and an n-type electrode layer 8B are laminated on the surface in the electron transit layer 7B side of the first mesa 101 in that order. In this construction, the total donor concentration of the n-type electric field control layer 7A is lower than the total acceptor concentration of the p-type electric field control layer 5 by the range of 2×10to 1×10/cm.
摘要翻译：要解决的问题：提供可以减少由台面表面产生的暗电流或电极层的形状的APD。解决方案：APD 301包括半绝缘基板1; 第一台面101由第一层叠结构构成，其中p型电极层2，p型光吸收层3A，杂质浓度低的光吸收层3B，带隙倾斜层4，p型电在半绝缘基板1上依次层叠具有低杂质浓度的场控制层5，雪崩倍增层6，n型电场控制层7A和电子转移层7B。以及第二台面102，其从层叠方向观察时，其外周位于第一台面101的外周的内侧，该第二台面102由第二层叠结构构成，其中n型电极缓冲层8A和n型电极层 8B按顺序层压在第一台面101的电子转移层7B侧的表面上。在这种结构中，n型电场控制层7A的总供体浓度比p型电场控制层5的总受主浓度低2×10 11 到1×10 12 / cm 2 。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2009152436A Light receiving device 审中-公开
标题翻译：灯接收装置
公开(公告)号：JP2009152436A
公开(公告)日：2009-07-09
申请号：JP2007329839
申请日：2007-12-21
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： ISHIBASHI TADAO , MARUYAMA KAZUHIRO , KOBAYASHI KENJI , AKEYOSHI TOMOYUKI , MURAMOTO YOSHIFUMI , FURUTA TOMOSHI , NAKAJIMA FUMITO
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To provide a light receiving device including balance type photodiodes reducing a dark current regardless of a mutual distance between the photodiodes.
SOLUTION: The light receiving device includes a semi-insulating substrate 11 having two p-type first regions 31 on the surface and a laminated structure 35 having a low concentration semiconductor layer 14 between an n-type semiconductor layer 13 and a p-type semiconductor layer 15, wherein in each of the first regions 31 of the semi-insulating substrate 11, there are provided a first pin-type photodiode 301 in which the laminated structure 35 is formed so that the n-type semiconductor layer 13 exists in the side of the semi-insulating substrate 11 and a second pin-type photodiode 302, a first bias electrode 16-1, a second bias electrode 17-2, and an output signal electrode pad 18-3 outputting the differential signal between the first pin-type photodiode 301 and the second pin-type photodiode 302.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括平衡型光电二极管的光接收装置，其减小暗电流，而与光电二极管之间的相互距离无关。光接收装置包括在表面上具有两个p型第一区域31的半绝缘基板11和在n型半导体层13和p之间具有低浓度半导体层14的层压结构35 型半导体层15，其中在半绝缘基板11的每个第一区域31中设置有第一pin型光电二极管301，其中形成层叠结构35，使得n型半导体层13存在在半绝缘基板11的一侧和第二pin型光电二极管302，第一偏置电极16-1，第二偏置电极17-2和输出信号电极焊盘18-3之间输出差分信号第一pin型光电二极管301和第二pin型光电二极管302.版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2007005697A Avalanche photodiode 有权
标题翻译： AVALANCHE光电
公开(公告)号：JP2007005697A
公开(公告)日：2007-01-11
申请号：JP2005186551
申请日：2005-06-27
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： ISHIBASHI TADAO , ANDO SEIGO , HIROTA YUKIHIRO , MURAMOTO YOSHIFUMI
IPC分类号： H01L31/107
CPC分类号： H01L31/107 , H01L31/1075
摘要： PROBLEM TO BE SOLVED: To provide technique for manufacturing an electron implanted avalanche photodiode to be stably operated with a low and dark current. SOLUTION: The avalanche photodiode includes n-type doping regions 22-1, 22-2 inside a region, which is regulated by light-absorbing layers, in an InP buffer layer 22. A prescribed doping profile is obtained by an ion implantation method so as to mitigate electric field concentration in an avalanche multiplying layer 23. The second light-absorbing layer 26-2 with low concentration is arranged between the light-absorbing layer 26-1 and the avalanche multiplying layer 23 so as to maximize efficiency in light reception. Thus, depletion on the side surfaces of the light-absorbing layers is suppressed so as to prevent the electric field concentration. Edge breakdown is suppressed, so that reliability is raised in an element. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供用于制造电子注入雪崩光电二极管的技术，以便以低电流和暗电流稳定工作。解决方案：雪崩光电二极管包括在InP缓冲层22中由光吸收层调节的区域内的n型掺杂区域22-1,22-2。通过离子获得规定的掺杂分布以减轻雪崩倍增层23中的电场浓度。低浓度的第二光吸收层26-2被布置在光吸收层26-1和雪崩倍增层23之间，以便最大化效率在光接收。因此，抑制光吸收层的侧面的耗尽，以防止电场浓度。边缘击穿被抑制，从而在元素中提高可靠性。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2012156206A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012156206A
公开(公告)日：2012-08-16
申请号：JP2011012277
申请日：2011-01-24
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： ISHIBASHI TADAO , ANDO SEIGO , MURAMOTO YOSHIFUMI , YOSHIMATSU SHUNEI , YOKOYAMA HARUKI
IPC分类号： H01L29/737 , G02F1/017 , H01L21/331 , H01L31/10
CPC分类号： H01L29/0615 , G02F1/025 , G02F2001/0157 , H01L29/0692 , H01L29/0821 , H01L29/205 , H01L29/41708 , H01L29/42304 , H01L29/7371 , H01L31/03046 , H01L31/035281 , H01L31/105
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing a device size and a series resistance and suppressing a leak current.SOLUTION: A layer generating an unwanted potential step for a device operation is daringly inserted into a device structure. The potential step functions to suppress a potential descending amount of a mesa side surface even when a semiconductor having small band gap is exposed to the mesa side surface, thereby the leak current inconvenient to the device operation can be reduced. The effect can be commonly obtained from a heterostructure bipolar transistor, a photodiode, and an electric field absorption type optical modulator, and so on. In the photodiode, since the leak current is relieved, the device size can be reduced, and not only the operation rate can be improved, but also an array-like arrangement of the device with high-density can be achieved.
摘要翻译：要解决的问题：提供能够降低器件尺寸和串联电阻并抑制漏电流的半导体器件。解决方案：产生用于设备操作的不期望的潜在步骤的层被大胆地插入到设备结构中。即使当具有小带隙的半导体暴露于台面侧表面时，电位步骤也用于抑制台面侧表面的潜在下降量，从而可以减少不方便器件操作的漏电流。通常可以从异质结双极晶体管，光电二极管和电场吸收型光调制器等获得该效果。在光电二极管中，由于泄漏电流被消除，因此能够减小器件尺寸，不仅能够提高工作率，而且能够实现高密度的器件的阵列状配置。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012124404A Photodiode and manufacturing method therefor 审中-公开
标题翻译：光电及其制造方法
公开(公告)号：JP2012124404A
公开(公告)日：2012-06-28
申请号：JP2010275496
申请日：2010-12-10
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： SATO TOSHIYA , SHIGEKAWA NAOTERU , MURAMOTO YOSHIFUMI , YOSHIMATSU SHUNEI , ISHIBASHI TADAO
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To eliminate a current leakage problem on a mesa portion sidewall including a light absorption layer constituting a photodiode.SOLUTION: The photodiode at least includes: a lower contact layer 102 composed of a first conductivity type first compound semiconductor formed on a substrate 101; an electron transit layer 103 composed of the first compound semiconductor formed on the lower contact layer 102; a light absorption layer 104 composed of a second compound semiconductor formed on the electron transit layer 103; an upper contact layer 105 composed of a second conductivity type first compound semiconductor formed on the light absorption layer 104; and a first electrode 106 formed on the lower contact layer 102 and a second electrode 107 formed on the upper contact layer 105. The electron transit layer 103 formed on the substrate 101 is formed in a wider area than the light absorption layer 104 and the upper contact layer 105.
摘要翻译：要解决的问题：为了消除包括构成光电二极管的光吸收层的台面部分侧壁上的电流泄漏问题。解决方案：光电二极管至少包括：形成在基板101上的由第一导电类型的第一化合物半导体构成的下接触层102; 由形成在下接触层102上的第一化合物半导体构成的电子转移层103; 由形成在电子传输层103上的第二化合物半导体构成的光吸收层104; 由形成在光吸收层104上的第二导电型第一化合物半导体构成的上接触层105; 以及形成在下接触层102上的第一电极106和形成在上接触层105上的第二电极107.形成在基板101上的电子转移层103形成在比光吸收层104更宽的区域中，接触层105.版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2011187607A Semiconductor light-receiving device 有权
标题翻译：半导体接收器件
公开(公告)号：JP2011187607A
公开(公告)日：2011-09-22
申请号：JP2010050202
申请日：2010-03-08
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： NADA MASAHIRO , FURUTA TOMOSHI , MURAMOTO YOSHIFUMI , SHIGEKAWA NAOTERU , ISHIBASHI TADAO
IPC分类号： H01L31/10
摘要： PROBLEM TO BE SOLVED: To suppress deterioration in the performance of a reflecting layer of an under surface incident semiconductor light-receiving device provided with the reflecting layer.
SOLUTION: The semiconductor light-receiving device includes at least a first semiconductor layer 102 of a first conductive type semiconductor which is formed on a substrate 101; a light absorption layer 103 of a semiconductor which is formed on the first semiconductor layer 102; a second semiconductor layer 104 of a second conductive type semiconductor which is formed on the light absorption layer 103; a first electrode 105, formed in contact with the upper periphery of the second semiconductor layer 104; a second electrode 106 formed on the first semiconductor layer 102; and a metallic reflecting layer 109 formed via a dielectric layer 108 on the second semiconductor layer 104 inside the first electrode 105.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了抑制设置有反射层的下表面入射半导体光接收装置的反射层的性能的劣化。解决方案：半导体光接收装置至少包括形成在基板101上的第一导电型半导体的第一半导体层102; 形成在第一半导体层102上的半导体的光吸收层103; 形成在光吸收层103上的第二导电型半导体的第二半导体层104; 形成为与第二半导体层104的上周接触的第一电极105; 形成在第一半导体层102上的第二电极106; 以及经由第一电极105内的第二半导体层104上的电介质层108形成的金属反射层109。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011066268A Electric circuit 审中-公开
标题翻译：电路
公开(公告)号：JP2011066268A
公开(公告)日：2011-03-31
申请号：JP2009216583
申请日：2009-09-18
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： YOSHIMATSU SHUNEI , MURAMOTO YOSHIFUMI , FURUTA TOMOSHI , SHIGEKAWA NAOTERU , ISHIBASHI TADAO
IPC分类号： H01L27/14 , H01L21/822 , H01L27/04 , H01P3/08 , H01P5/04
摘要： PROBLEM TO BE SOLVED: To equalize electric lengths, in a plurality of transmission lines different in physical lengths. SOLUTION: In a transmission line having a longer physical length out of a plurality of transmission lines A, B having different physical lengths and formed on a thin-film insulator on a semiconductor substrate 1, a region increased in signal transmission speed is formed by sandwiching a low-permittivity insulation film 3 between a signal line metal constituting the transmission line and the semiconductor substrate 1, and the length of the region with the low-permittivity insulation film 3 sandwiched is adjusted in accordance with the physical length of the transmission line A, whereby the electric lengths of all the transmission lines are equalized. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了在物理长度不同的多条传输线中均衡电长度。解决方案：在具有不同物理长度并且形成在半导体衬底1上的薄膜绝缘体上的多条传输线A，B中具有较长物理长度的传输线中，信号传输速度增加的区域是通过将构成传输线的信号线金属与半导体基板1之间的低介电常数绝缘膜3夹在中间而形成，并且夹着低介电常数绝缘膜3的区域的长度根据传输线A，从而所有传输线的电长度相等。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2009027215A Optical receiver 审中-公开
标题翻译：光接收机
公开(公告)号：JP2009027215A
公开(公告)日：2009-02-05
申请号：JP2007185202
申请日：2007-07-17
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： MARUYAMA KAZUHIRO , ISHIBASHI TADAO , FURUTA TOMOSHI , MURAMOTO YOSHIFUMI
IPC分类号： H04B10/40 , H01L31/0232 , H01L31/10 , H04B10/11 , H04B10/50 , H04B10/60 , H04B10/67 , H04B10/80
摘要： PROBLEM TO BE SOLVED: To provide a compact optical receiver which can be simplified in configuration.
SOLUTION: The optical receiver comprises a photodiode for receiving signal light, a photocell for receiving power supply light, and a capacitor wherein the photodiode and the photocell are connected in series by connecting one anode with the other cathode and formed into an identical semiconductor chip, and the capacitor has one end connected with the joint of the photodiode and the photocell and connects an electric signal from the photodiode to the ground.
COPYRIGHT: (C)2009,JPO&INPIT

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