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    • 1. 发明专利
    • 高周波伝送線路
    • 高频传输线
    • JP2015050680A
    • 2015-03-16
    • JP2013181958
    • 2013-09-03
    • 日本電信電話株式会社Nippon Telegr & Teleph Corp
    • TANOBE HIROMASAYOSHIDA EIJINAKAJIMA FUMITONAKANISHI YASUHIKO
    • H01P5/08H01P3/08H05K1/02H05K3/46
    • 【課題】基板平面方向から垂直方向への屈曲部において、10GHz以上の高周波信号を少ない通過損失および反射損失で伝搬させる。【解決手段】多層配線基板11を構成するグランドプレーン11Gのうち最上層の直下に形成された直下グランドプレーン11Gに、アンチパッド領域16のうち高周波信号ビア14と接触しない範囲で、高周波信号線路12がアンチパッド領域16の外周縁と平面視において交差する交点Pから高周波信号ビア14に向けて、直下グランドプレーン11Gの端部が拡張された拡張部13を設ける。【選択図】図1A
    • 要解决的问题:在从基板平面方向到垂直方向的弯曲部分,以小的通道损耗和小的反射损耗传播10GHz或更高的高频信号。解决方案:在直接地下平面 11G,其形成在构成多层布线板11的接地层11G的正下方的接地层11G的最下层的下方,设置有延伸部13,该延伸部13具有朝向高频扩展的直接接地面11G的端部 信号通路14从具有与反焊盘区域16的外周边缘相交的高频信号线12的交点P在平面图中,在与高频率不接触的防焊盘区域16的范围内 信号通过14。
    • 3. 发明专利
    • Light receiving component and manufacturing method for optical receiver module
    • 光接收模块的光接收元件和制造方法
    • JP2014048550A
    • 2014-03-17
    • JP2012192828
    • 2012-09-03
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • NAKAJIMA FUMITONASU YUSUKETSUNASHIMA SATOSHINAKANISHI YASUHIKO
    • G02B6/42H01L31/0232
    • PROBLEM TO BE SOLVED: To achieve highly accurate alignment without making assembly step complex and complicated and without increasing cost.SOLUTION: A light receiving component comprises: a communication photo diode 102 formed on a chip substrate 101; and a plurality of aligning parts 103 formed on the chip substrate 101. The communication photo diode 102 has a light absorption layer 122 formed from semiconductor. The communication photo diode 102 is, for example, a rear incident type in which light is made incident on from the chip substrate 101 side. Light to be made incident on the communication photo diode 102 is transmitted through the chip substrate 101. The aligning parts 103 are composed of a material that blocks the light, and has a hole 131 smaller than the light receiving area of the communication photo diode 102.
    • 要解决的问题:为了实现高精度对准而不使组装步骤复杂和复杂,并且不增加成本。解决方案:光接收部件包括:形成在芯片基板101上的连通光电二极管102; 以及形成在芯片基板101上的多个对准部分103.通信光电二极管102具有由半导体形成的光吸收层122。 通信光电二极管102例如是从芯片基板101侧入射光的后入射型。 入射到通信光电二极管102的光通过芯片基板101传输。对准部103由阻挡光的材料构成,并且具有小于通信光电二极管102的光接收面积的孔131 。
    • 5. 发明专利
    • Avalanche photodiode
    • AVALANCHE光电
    • JP2010147177A
    • 2010-07-01
    • JP2008321298
    • 2008-12-17
    • Nippon Telegr & Teleph Corp Ntt Electornics CorpNttエレクトロニクス株式会社日本電信電話株式会社
    • ISHIBASHI TADAOANDO SEIGOMURAMOTO YOSHIFUMINAKAJIMA FUMITOYOKOYAMA HARUKI
    • H01L31/107
    • H01L31/1075
    • PROBLEM TO BE SOLVED: To provide an electron injection type APD of embedded n electrode structure which has a structure for suppressing edge breakdown, without having to carry out precise control of doping profile, in an n-type region of the embedded n-type electrode structure.
      SOLUTION: In an avalanche photodiode (APD), a buffer layer 33 of low ionization rate is inserted between an n electrode connecting layer 32 and an avalanche multiplication layer 34. Specifically, the electron injection-type APD has an n electrode layer 31, the n electrode connection layer 32, a buffer layer 33, the avalanche multiplication layer 34, an electric field control layer 35, a bandgap inclination layer 36, a low concentration light-absorbing layer 37a, a p-type light-absorbing layer 37b, and a p-electrode layer 38 stacked sequentially. A light-absorbing part 37, including at least the low-concentration light-absorbing layer 37a and the p-type light-absorbing layer 37b forms a mesa shape.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种具有用于抑制边缘击穿的结构的嵌入式n电极结构的电子注入型APD,而不必在嵌入的n的n型区域中进行掺杂分布的精确控制 型电极结构。 解决方案:在雪崩光电二极管(APD)中,在n电极连接层32和雪崩倍增层34之间插入低电离率的缓冲层33.具体地,电子注入型APD具有n电极层 如图31所示,n电极连接层32,缓冲层33,雪崩倍增层34,电场控制层35,带隙倾斜层36,低浓度光吸收层37a,p型光吸收层 37b和p电极层38。 至少包括低浓度光吸收层37a和p型光吸收层37b的光吸收部37形成台面形状。 版权所有(C)2010,JPO&INPIT
    • 6. 发明专利
    • Light receiving device
    • 灯接收装置
    • JP2005167043A
    • 2005-06-23
    • JP2003405410
    • 2003-12-04
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • ITO HIROSHIFURUTA TOMOSHINAKAJIMA FUMITO
    • H01L31/10
    • PROBLEM TO BE SOLVED: To improve light receiving efficiency even if a light receiving element is disposed in a position apart from a light incidence edge face.
      SOLUTION: A light incidence edge face 10 which tilts to an outside facing diagonally a front surface direction as it gets off from the surface of a semiconductor substrate 1 is provided to an edge face of the semiconductor substrate 1. A high reflectance film 12 is provided to a rear of the semiconductor substrate 1 for making signal light injected from the light incidence edge face 10 refracted in the light incidence edge face 10, and injected from an diagonally downward surface to an absorption layer 5 of a light receiving element 14 after total reflection in the high reflectance film 12.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:即使光接收元件设置在远离光入射边缘面的位置,也提高光接收效率。 解决方案:在半导体衬底1的边缘表面上设置有一个从半导体衬底1的表面向外倾斜的面向外表面方向的光入射边缘面10。 12设置在半导体基板1的后面,用于使从入射光面10引出的信号光在光入射边缘面10中折射,并从斜向下表面注入光接收元件14的吸收层5 在高反射率膜12中全反射之后。版权所有(C)2005,JPO&NCIPI
    • 7. 发明专利
    • Jig and substrate
    • JIG和基板
    • JP2014052215A
    • 2014-03-20
    • JP2012195165
    • 2012-09-05
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • NAKAJIMA FUMITO
    • G01R31/26
    • PROBLEM TO BE SOLVED: To provide a jig allowing a substrate to be disposed in a prescribed position, and a substrate.SOLUTION: A lower member 2 and an upper member 3 include positioning projections 22 and 32 which project toward a mounting substrate 5 and are to be put into notches 54a and 54b formed on the mounting substrate 5. Therefore, a jig 1 and the mounting substrate 5 are fixed via the notches 54a and 54b and the projections 22 and 32 when the mounting substrate 5 is held between the lower member 2 and the upper member 3, and as a result, the mounting substrate 5 can be disposed in a prescribed position regardless of outer shape of the mounting substrate 5.
    • 要解决的问题:提供允许将基板设置在规定位置的夹具和基板。解决方案:下部构件2和上部构件3包括朝向安装基板5突出的定位突起22和32,并且是 被放置在形成在安装基板5上的凹口54a和54b中。因此,当安装基板5保持在下部构件之间时,夹具1和安装基板5经由凹口54a和54b以及突起22和32固定 2和上部构件3,结果,安装基板5可以设置在规定位置,而与安装基板5的外形无关。
    • 8. 发明专利
    • Optical subcarrier transmitter
    • 光电子发射器
    • JP2006114584A
    • 2006-04-27
    • JP2004298433
    • 2004-10-13
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • ONO TETSUICHIRONAKAJIMA FUMITOITO HIROSHI
    • H01S5/50G02F1/017
    • PROBLEM TO BE SOLVED: To provide an optical sub-carrier transmitter which may be driven with an output higher than that of the optical sub-carrier transmitter of prior art and moreover having digital signal of small amplitude. SOLUTION: The optical sub-carrier transmitter comprises a current input means 105 for inputting DC current to a gain region 101, by optically coupling a field-absorbing type light modulating region 102 for changing its light absorbing coefficient accompanying the applied field to one end side of the gain region 101; forming a Bragg reflector region 103 designed to result in the light spectrum formed of major two vertical modes of the output light to the upper surface of the other end side of the gain region 101, and by optically coupling the regions 102 and 103 sandwiching the gain region 101; a high-frequency wave input means 106 for externally inputting high-frequency signal to the field-absorbing type optical modulator region 102; and modulating current input means 108, 109 for inputting the bias signal modulated with digital signal to the Bragg reflector region 103. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种光子载波发射机,其可以以比现有技术的光子载波发射机的输出高的输出驱动,并且还具有小振幅的数字信号。 解决方案:光子载波发射机包括电流输入装置105,用于通过光耦合场吸收型光调制区域102,用于将伴随所施加场的光吸收系数改变为 增益区域101的一端侧; 形成布拉格反射器区域103,其被设计成导致由输出光的主要两个垂直模式形成的光谱到增益区域101的另一端侧的上表面,并且通过光学耦合夹住增益的区域102和103 区域101; 高频波输入装置106,用于向场吸收型光调制器区域102外部输入高频信号; 以及调制电流输入装置108,109,用于将用数字信号调制的偏置信号输入到布拉格反射器区域103.权利要求:(C)2006,JPO&NCIPI
    • 9. 发明专利
    • Light receiving device
    • 灯接收装置
    • JP2005347663A
    • 2005-12-15
    • JP2004168090
    • 2004-06-07
    • Nippon Telegr & Teleph Corp 日本電信電話株式会社
    • NAKAJIMA FUMITOFURUTA TOMOSHIITO HIROSHI
    • H01L31/0232
    • PROBLEM TO BE SOLVED: To provide a light receiving device which can improve light receiving efficiency of an element with no limitations on a flat antenna shape even if a light receiving element wherein a flat antenna is integrated monolythically is provided on a super-hemispheric lens.
      SOLUTION: In the light receiving device having the super-hemispheric lens 1 consisting of an insulating material which is transparent for signal light and milliwave, submillimeter wave, a semiconductor substrate 11 and the light receiving element 10 with an absorption layer 14 provided to the surface of the semiconductor substrate 11, a reflection surface 2 which tilts inside as it gets far from a flat surface of the super-hemispheric lens 1 is provided to an end of the flat surface of the super-hemispherical lens 1, signal light injected to the reflection surface 2 from above the flat surface of the super-hemispheric lens 1 reflects in the reflection surface 2 and is subjected to oblique incidence to the absorption layer 14 of the light receiving element 10.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供一种光接收装置,其即使在平面天线整体上集成平坦天线的光接收元件设置在超级平面天线上也可以提供对平坦天线形状没有限制的元件的光接收效率, 半球镜。 解决方案:在具有超声半透镜1的光接收装置中,由对信号光和毫波透明的绝缘材料构成,亚毫米波,半导体衬底11和具有吸收层14的光接收元件10 在半导体基板11的表面上,在远离半球半透镜1的平坦面的情况下,将反射面2向内侧倾斜设置在超半球面透镜1的平坦面的一端,信号光 从超级半球透镜1的平坦表面上方向反射面2注入的反射面2在反射面2中反射并被倾斜地入射到受光元件10的吸收层14上。(C) 2006年,JPO&NCIPI