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1. 发明专利

JP2013093622A Optical semiconductor device control method 有权
标题翻译：光学半导体器件控制方法
公开(公告)号：JP2013093622A
公开(公告)日：2013-05-16
申请号：JP2013028592
申请日：2013-02-18
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： FUJISAWA TAKESHI , YAMANAKA TAKAYUKI , KANO FUMIYOSHI , KOBAYASHI WATARU , TADOKORO TAKASHI , FUJIWARA NAOKI
IPC分类号： H01S5/026 , G02F1/017 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device control method which can increase an extinction ratio while maintaining the number of well layers and modulator length unchanged.SOLUTION: There is provided a control method for an optical semiconductor device comprising: a substrate consisting of a semiconductor mixed crystal; an electroabsorption type optical modulator, formed on the substrate, which has an active section of multiquantum well structure including a quantum well layer and a barrier layer and upper/lower clad sections respectively covering the top and the bottom of the active section, and which is composed by fabricating a ridge waveguide structure having a ridge mesa section of about optical wavelength in width by etching part of the upper clad section and then filling up both sides of the ridge mesa section with an organic material having a small heat transfer coefficient; a semiconductor laser which outputs light by an injected current; and an optical waveguide device, provided between the semiconductor laser and the electroabsorption type optical modulator, in which the light output from the semiconductor laser is guided. The extinction ratio of the electroabsorption type optical modulator is controlled by changing the current injected into the semiconductor laser.
摘要翻译：要解决的问题：提供一种可以在保持阱层数和调制器长度不变的同时增加消光比的光半导体器件控制方法。解决方案：提供了一种用于光学半导体器件的控制方法，包括：由半导体混晶构成的衬底; 形成在基板上的电吸收型光调制器，其具有包括量子阱层和势垒层的多量子阱结构的有源部分和分别覆盖有源部分的顶部和底部的上/下包层部分，通过蚀刻上包层部分的一部分制造具有约宽光波长的脊台面部分的脊波导结构，然后用具有小的传热系数的有机材料填充脊台部分的两侧; 通过注入电流输出光的半导体激光器; 以及设置在半导体激光器和电吸收型光调制器之间的光波导器件，其中从半导体激光器输出的光被引导。通过改变注入半导体激光器的电流来控制电吸收型光调制器的消光比。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013021139A Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：JP2013021139A
公开(公告)日：2013-01-31
申请号：JP2011153434
申请日：2011-07-12
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Ntt Electornics Corp , Nttエレクトロニクス株式会社
发明人： FUJIWARA NAOKI , KAMITOKU MASAKI , KOBAYASHI WATARU , KADOWAKI KAYO
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser which can suppress weakening of breaking strength to an external force to improve manufacturing yield despite a structure in which an organic material having a low dielectric constant is inserted below an electrode.SOLUTION: The semiconductor laser comprises: an element body 10 including a semiconductor laser part 10a outputting light and a light modulation part 10b provided on an output side of the semiconductor laser part 10a for modulating the light on the same substrate. The light modulation part 10b includes: a light waveguide layer through which light is guided; buried layers 12, 13 provided adjacent to the light waveguide layer and each composed of an organic material having a low dielectric constant; a first insulation film 14 provided on surfaces of the buried layers 12, 13; and an upper electrode 16 provided on the first insulation film 14 for supplying electric signals to the light waveguide layer. The semiconductor laser comprises second insulation films 17 provided on a top face of the first insulation film 14 and on a top face of the upper electrode 16.
摘要翻译：要解决的问题：提供一种半导体激光器，其可以抑制断裂强度对外力的弱化，从而提高制造成品率，尽管将具有低介电常数的有机材料插入到电极下面的结构。解决方案：半导体激光器包括：元件体10，其包括输出光的半导体激光器部分10a和设置在半导体激光器部分10a的输出侧的光调制部分10b，用于调制同一基板上的光。光调制部10b包括：光引导通过的光波导层; 设置在光波导层附近并且各自由具有低介电常数的有机材料构成的掩埋层12,13; 设置在埋层12,13的表面上的第一绝缘膜14; 以及设置在第一绝缘膜14上用于向光波导层提供电信号的上电极16。半导体激光器包括设置在第一绝缘膜14的顶面和上电极16的顶面上的第二绝缘膜17.（C）2013，JPO和INPIT

3. 发明专利

JP2012178498A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2012178498A
公开(公告)日：2012-09-13
申请号：JP2011041324
申请日：2011-02-28
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： TADOKORO TAKASHI , KOBAYASHI WATARU
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device using a modulator integrated semiconductor laser, capable of high-speed modulation at lower power consumption and lower cost than conventional devices.SOLUTION: A temperature dependent terminal resistance 4 with resistance value varying with temperature is connected in parallel to a modulator section 3b to input a modulation signal into the modulator section 3b through the temperature dependent terminal resistance 4.
摘要翻译：要解决的问题：提供一种使用调制器集成半导体激光器的半导体激光器件，能够以比传统器件更低的功耗和更低的成本进行高速调制。解决方案：具有随温度变化的电阻值的依赖温度的端子电阻4与调制器部分3b并联连接，以通过温度依赖性端子电阻4将调制信号输入调制器部分3b。版权所有（ C）2012，JPO＆INPIT

4. 发明专利

JP2011018713A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2011018713A
公开(公告)日：2011-01-27
申请号：JP2009161309
申请日：2009-07-08
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： TAKESHITA TATSUYA , KOBAYASHI WATARU , KANO FUMIYOSHI , OHASHI HIROMI
IPC分类号： H01S5/20
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser having a stable near-field pattern closer to a complete round.SOLUTION: The semiconductor laser includes an n-InP substrate 10, an i-InGaAlAs (0.95 μm composition) first SCH layer 2, an InGaAlAs active layer 1, an i-InGaAlAs (0.95 μm composition) second SCH layer 3, a p-In first clad layer 7a, a p-InGaAsP (1.1 μm composition) high refractive index layer 8, a p-InP second clad layer 7b, and P-InGaAsP cap layer 9 comprising a semiconductor laser epitaxial film. In the p-InP first clad layer 7a, a p-InGaAsP (1.1 μm composition) light guide layer 6 of a diffraction grating is formed into this p-InP first clad layer 7a, the p-InP second clad layer 7b and the p+-GaAsP cap layer 9 are formed into ridges, and the refractive index of the p-InGaAsP high refractive index layer 8 is made higher than those of the p-Inp first clad layer 7a and the p-InP second clad layer 7b.
摘要翻译：要解决的问题：提供具有更接近整圆的稳定近场图案的半导体激光器。解决方案：半导体激光器包括n-InP衬底10，i-InGaAlAs（0.95μm组成）第一SCH层2， InGaAlAs有源层1，i-InGaAlAs（0.95μm组成）第二SCH层3，p-In第一包层7a，p-InGaAsP（1.1μm组成）高折射率层8，p-InP第二包层层7b和包含半导体激光外延膜的P-InGaAsP覆盖层9。在p-InP第一包层7a中，在该p-InP第一包层7a中形成衍射光栅的p-InGaAsP（1.1μm组合物）导光层6，p-InP第二包层7b和p + -GaAsP覆盖层9形成为脊，并且使p-InGaAsP高折射率层8的折射率高于p-Inp第一包层7a和p-InP第二包层7b的折射率。

5. 发明专利

JP2009253097A Semiconductor optical integrated element 有权
标题翻译：半导体光学集成元件
公开(公告)号：JP2009253097A
公开(公告)日：2009-10-29
申请号：JP2008100507
申请日：2008-04-08
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , NUNOTANI NOBUHIRO
IPC分类号： H01S5/026 , G02F1/015 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element which is composed of a semiconductor laser and semiconductor optical modulator integrated on one substrate using an Al-based semiconductor material, wherein the effects of oxidation and side etch of the Al-based semiconductor material are suppressed, and reflection and dispersion in the BJ (butt-joint) surface are suppressed. SOLUTION: In the semiconductor optical integrated circuit constituted by performing monolithic integration of an optical waveguide of a laser part having an active layer 13 consisting of an Al-based semiconductor material and an optical waveguide of a modulator part having a modulator layer 18 consisting of the Al-based semiconductor material on one substrate, a common waveguide layer consisting of a non-Al based semiconductor material is provided, a coupling part consisting of the non-Al based semiconductor material is provided, ridge width of an optical waveguide of the coupling part is made larger than ridge width of the optical waveguides of the laser part and the modulator part, and a coupling surface between the active layer 13 and a semiconductor layer 23 of the coupling part, and a coupling surface between the modulator layer 18 and a semiconductor layer 23 of the coupling part are further inclined in the direction perpendicular to the waveguide direction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体光学集成元件，其由半导体激光器和使用Al基半导体材料集成在一个基板上的半导体光学调制器组成，其中Al-半导体材料的氧化和侧面蚀刻的效果，抑制BJ（对接）表面的反射和分散。解决方案：在由具有由Al基半导体材料构成的有源层13和具有调制器层18的调制器部分的光波导的激光器部分的光波导的单片集成构成的半导体光集成电路中由一个基板上的Al基半导体材料构成，设置由非Al系半导体材料构成的共用波导层，由非Al系半导体材料构成的耦合部，使耦合部分大于激光部分和调制器部分的光波导的脊宽度，以及有源层13和耦合部分的半导体层23之间的耦合表面，以及调制器层18 并且耦合部分的半导体层23在垂直于波导方向的方向上进一步倾斜。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2013258337A Semiconductor optical integrated element 有权
标题翻译：半导体光学集成元件
公开(公告)号：JP2013258337A
公开(公告)日：2013-12-26
申请号：JP2012134253
申请日：2012-06-13
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , YAMANAKA TAKAYUKI , KAMITOKU MASAKI , SHIBATA YASUO
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element which achieves simpler control and downsizing of an element compared with a semiconductor optical integrated element in the past to achieve SMF 80 km transmission over a whole area of a C band.SOLUTION: A semiconductor optical integrated element comprises a laser part having a wavelength variable function, an EA modulator and an SOA which are monolithic integrated on the same substrate. The laser part, the EA modulator and the SOA are integrated in this order with respect to an optical waveguide direction. A length of the SOA is not less than 50 μm and not more than 150 μm.
摘要翻译：要解决的问题：提供一种半导体光学集成元件，其与过去的半导体光学集成元件相比实现了更简单的元件的控制和小型化，以在C波段的整个区域上实现SMF 80km的传输。解决方案：半导体光学集成元件包括具有波长可变功能的激光器部件，EA调制器和SOA，其整体集成在同一基板上。激光器部件，EA调制器和SOA相对于光波导方向以该顺序集成。 SOA的长度不小于50μm且不大于150μm。

7. 发明专利

JP2013258336A Semiconductor optical integrated element 有权
标题翻译：半导体光学集成元件
公开(公告)号：JP2013258336A
公开(公告)日：2013-12-26
申请号：JP2012134252
申请日：2012-06-13
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , YAMANAKA TAKAYUKI , KAMITOKU MASAKI , SHIBATA YASUO
IPC分类号： H01S5/026 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element and an optical transmitter module mounting the same, which generate an optical signal having an optical waveform capable of long-distance transmission and which can inhibit loss in light intensity without increasing the number of control terminals and power consumption in comparison with an EA-DFB laser of the past.SOLUTION: A semiconductor optical integrated element according to the present embodiment comprises a DFB laser, an EA modulator and an SOA which are monolithic integrated on the same substrate. The DFB laser, the EA modulator and the SOA are integrated in this order with respect to an optical waveguide direction. And the DFB laser and the SOA are current injected by the same control terminal.
摘要翻译：要解决的问题：提供一种半导体光学集成元件和安装该光学元件的光发射模块，其产生具有能够进行长距离传输的光波形的光信号，并且可以抑制光强度的损失而不增加控制次数端子和功耗与过去的EA-DFB激光器相比。本发明的半导体光学集成元件包括DFB激光器，EA调制器和SOA，它们整体集成在同一衬底上。 DFB激光器，EA调制器和SOA相对于光波导方向以该顺序集成。 DFB激光器和SOA由同一个控制端子电流注入。

8. 发明专利

JP2012174919A Optical transmitter module 有权
标题翻译：光传输模块
公开(公告)号：JP2012174919A
公开(公告)日：2012-09-10
申请号：JP2011036139
申请日：2011-02-22
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , KANO FUMIYOSHI , YAMAMOTO TOMOO
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide an optical transmitter module capable of transmitting an RF signal of 40 Gb/s from an FPC substrate to the inside of a TO-CAN package with low transmission loss and low reflection loss.SOLUTION: The optical transmitter module includes a TO-CAN package 13 and an FPC substrate 12. A coaxial pin 22 is so connected to a high frequency signal line on the surface of the FPC substrate that the interval between the coaxial pin 22 of the TO-CAN package and the FPC substrate becomes 0 or more and 0.1 mm or less. A DC pin of the TO-CAN package is bent and connected to a DC signal line on the rear side of the FPC substrate. The coaxial pin is connected to a high frequency signal line of a high-frequency circuit board 32 inside the TO-CAN package. The high frequency signal line, a resistor 35 inside the TO-CAN package, and an optical semiconductor element (DML 31) inside the TO-CAN package are electrically connected. A high frequency electric signal is made to be conductive to the optical semiconductor element from the high frequency signal line of the FPC substrate by way of the coaxial pin, the high frequency signal line of the high-frequency circuit board, and a resistance value of the resistor is 40 Ω or more and 45 Ω or less.
摘要翻译：要解决的问题：提供一种能够从FPC基板向低传输损耗和低反射损耗的TO-CAN封装的内部传输40Gb / s的RF信号的光发射机模块。解决方案：光发射机模块包括TO-CAN封装13和FPC基板12.同轴销22与FPC基板的表面上的高频信号线连接，同轴销22 的TO-CAN封装和FPC基板变为0以上且0.1mm以下。 TO-CAN封装的DC引脚弯曲并连接到FPC基板背面的直流信号线。同轴引脚连接到TO-CAN封装内的高频电路板32的高频信号线。 TO-CAN封装内部的高频信号线，电阻35以及TO-CAN封装内的光半导体元件（DML31）电连接。高频电信号通过同轴引脚，高频电路板的高频信号线和FPC电阻的电阻值从FPC基板的高频信号线向光半导体元件导电电阻为40Ω以上且45Ω以下。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011002474A Optical transmission module and control method 有权
标题翻译：光传输模块和控制方法
公开(公告)号：JP2011002474A
公开(公告)日：2011-01-06
申请号：JP2009142939
申请日：2009-06-16
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , FUJIWARA NAOKI , FUJISAWA TAKESHI
IPC分类号： G02F1/017 , G02F1/025 , H01S5/026 , H01S5/068
摘要： PROBLEM TO BE SOLVED: To detect module temperature on the basis of an absorption current of an EA modulator for monitoring in an EADFB laser.SOLUTION: An optical transmission module 100 includes: a distributed feedback laser 101; an electro-absorption modulator 102 for optical modulation which receives light emitted from one end surface 101a of the distributed feedback laser 101 and modulates it to output an optical signal S; an electro-absorption modulator 103 for monitoring which receives light emitted from the other end surface 101b of the distributed feedback laser 101; and electric separation parts 104 and 105, which are monolithically integrated on the same semiconductor substrate. Module temperature can be detected by detecting the absorption current absorbed by the EA modulator 103 for monitoring, to control the optical signal S to have predetermined specified power.
摘要翻译：要解决的问题：基于用于在EADFB激光器中监测的EA调制器的吸收电流来检测模块温度。解决方案：光传输模块100包括：分布式反馈激光器101; 用于光调制的电吸收调制器102，其接收从分布反馈激光器101的一个端面101a发射的光并对其进行调制以输出光信号S; 用于监测从分布式反馈激光器101的另一端面101b发射的光的电吸收调制器103; 以及单片集成在同一半导体基板上的电气分离部件104和105。通过检测由EA调制器103吸收的吸收电流进行监视，可以检测模块温度，以控制光信号S具有预定的指定功率。

10. 发明专利

JP2009194149A Semiconductor optical integrated element and construction method therefor 有权
标题翻译：半导体光学集成元件及其构造方法
公开(公告)号：JP2009194149A
公开(公告)日：2009-08-27
申请号：JP2008033121
申请日：2008-02-14
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , SUGO MITSURU
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element using a simple and convenient manufacturing process, in which the effect due to oxidization and side etching of an Al-system semiconductor material is small, and combination efficiency is high.
SOLUTION: The semiconductor optical integrated element has a monolithic integration on the same substrate 10 of an optical waveguide for a laser member 1, which has an active layer 11 constituted of an Al-system semiconductor material and an optical waveguide for a modulator member 2, having a modulator layer 12 composed of an Al-system semiconductor material, wherein a semiconductor layer 13 constituted of a non-Al-system semiconductor material is prepared between the active layer 11 and the modulator layer 12; and a common waveguide layer 15, constituted of a non-Al-system semiconductor material, is provided on an upper layer of the semiconductor layer 13, the active layer 11, and the modulator layer 12, thereby preparing an optical waveguide for a junction portion 3, between the optical waveguide for the laser member 1 and that for the modulator member 2, forming the common waveguide layer 15 and above into a ridge structure, and making the ridge width of the optical waveguide for the junction portion 3 larger than that for the optical waveguide for the laser member 1 and that the optical waveguide for the modulator member 2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种使用简单且方便的制造工艺的半导体光学集成元件，其中由于Al系半导体材料的氧化和侧蚀造成的效果小，并且组合效率高。解决方案：半导体光学集成元件在用于激光器件1的光波导的相同基板10上具有单片集成，其具有由Al系半导体材料构成的有源层11和用于调制器的光波导具有由Al系半导体材料构成的调制层12，其中在有源层11和调制层12之间制备由非Al系半导体材料构成的半导体层13; 并且在半导体层13，有源层11和调制层12的上层设置有由非Al系半导体材料构成的公共波导层15，由此制备用于接合部的光波导如图3所示，在激光构件1的光波导与调制构件2的波导之间，将公共波导层15及以上形成为脊结构，并且使接合部3的光波导的脊宽大于用于激光构件1的光波导和用于调制器构件2的光波导。版权所有（C）2009，JPO＆INPIT

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