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1. 发明专利

JP2003269924A DEVICE AND METHOD FOR MONITORING FILM THICKNESS 审中-公开
公开(公告)号：JP2003269924A
公开(公告)日：2003-09-25
申请号：JP2002075524
申请日：2002-03-19
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT FANET SYSTEMS CORP , NTT AFTY CORP
发明人： JIN YOSHITO , SHIMADA MASARU , OCHIAI KATSUYUKI , TAZAWA SATOSHI , MATSUO SEITARO , ONO TOSHIRO
IPC分类号： G01B11/06 , C23C14/54 , C23C16/52 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To realize a device and a method for monitoring film thickness that can precisely control the optical film thickness of a multi-layered film using λ 0 as a design wavelength to integer times of λ 0/4 . SOLUTION: The film thickness monitoring device and method are constituted while being characterized in that light from a light source 5 gets incident into a substrate 3 through an optical fiber 6, transmitted light from the substrate 3 is input into a spectroscope 10 through an optical fiber 9, a dispersed-spectral data of an output from the spectroscope 10 is input into a computing element 11, and whether the film thickness of the dielectric film is proper as a film thickness of a dielectric film of a constitutive element for the multi-layered film using the wavelength λ 0 as the design wavelength or not, using a difference F (feature quantity difference) between two integration values provided by integrating dispersed-spectral values in a low-frequency side wavenumber area and a high-frequency side wavenumber area symmetric around a wavenumber κ 0 corresponding to the λ 0 respectively in the respective wavenumber areas, in a process for film-forming the dielectric film by spattering from an ECR spattering source 4 on the substrate 3 inside a film forming chamber 2. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2003129236A THIN FILM FORMER 审中-公开
公开(公告)号：JP2003129236A
公开(公告)日：2003-05-08
申请号：JP2001326061
申请日：2001-10-24
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT AFTY CORP
发明人： JIN YOSHITO , ONO TOSHIRO , SHIMADA MASARU , MATSUO SEITARO
IPC分类号： G02B5/28 , C23C14/35 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To form a thin film in the state in which damages due to dust and abnormal plasma are suppressed. SOLUTION: A plasma confinement cylinder 113 that confines the scatter region of the ECR plasma delivered from a plasma formation chamber 102 is provided below the bottom of a target 105 (container 105a). The cylinder is made from a nonmagnetic material such as quartz or alumina. The cylinder 113 confines the scattering of a plasma stream delivered from the chamber 102 and passed through the region of the target 105 and confines the irradiation region of the plasma stream in the surface defined by the surface of a sample mount 104 within the region on the sample mount 104.

3. 发明专利

JP2002280384A THIN-FILM FORMING METHOD 失效
公开(公告)号：JP2002280384A
公开(公告)日：2002-09-27
申请号：JP2001077921
申请日：2001-03-19
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT AFTY CORP
发明人： SAITO KUNIO , ONO TOSHIRO , AMASAWA TAKAO
IPC分类号： H05H1/46 , C23C14/34 , G11B5/851 , H01F41/18 , H01L21/203 , H01L21/316 , H01L21/336 , H01L21/8246 , H01L27/105 , H01L29/78 , H01L29/786 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To form a film made of a compound of materials which are different from materials of a substrate on the surface of a substrate through reactive sputtering method, while a compound of materials of which the substrate is made is not formed on the substrate surface. SOLUTION: A metal mode film 102 made of Al-O molecules is formed, so as to cover most of the surface of a silicon substrate 101 in a metal mode, and successively, the metal mode is changed to oxide mode, alumina is deposited on the metal mode film 102, and an oxide mode film 103 is formed.

4. 发明专利

JP2001068403A MANUFACTURING EQUIPMENT AND METHOD OF X-RAY MASK 失效
公开(公告)号：JP2001068403A
公开(公告)日：2001-03-16
申请号：JP24482099
申请日：1999-08-31
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TSUCHIZAWA YASUSHI , TAKAHASHI CHIHARU , ONO TOSHIRO , ODA MASATOSHI
IPC分类号： H01L21/302 , G03F1/22 , H01L21/027 , H01L21/3065 , H05H1/46 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide manufacturing equipment of an X-ray mask which prevents temperature rise of a membrane region caused by plasma irradiation keeps the membrane region at a proper temperature when a pattern forming process, especially when an absorbing member is dry etched in X-ray mask manufacture, realizes high precision etching of the absorbing member and can cope with X-ray mask manufacture wherein membrane size and thickness are different without a special device in the equipment, and a manufacturing method of the X-ray mask. SOLUTION: A specimen table 2 which mounts an X-ray mask retaining frame 12 retaining a multilayer thin film in an etching chamber for manufacturing an X-ray mask has a flat surface, at least one jetting port 29 of cooling gas in the central part, and a structure which is thermally and hermetically in contact with the X-ray mask retaining frame 12. The table 2 is provided with at least a means which introduces cooling gas 3 in a space formed of a lower surface of the multilayer thin film, an inner peripheral surface of the retaining frame, and a surface of the specimen table to control cooling of the multilayer thin film.

5. 发明专利

JPH1022269A LOW-GAS-PRESSURE PLASMA ETCHING METHOD 失效
公开(公告)号：JPH1022269A
公开(公告)日：1998-01-23
申请号：JP17631396
申请日：1996-07-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI CHIHARU , JIN YOSHITO , ONO TOSHIRO , MATSUO SEITARO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform fine pattern formation with high etching selectivity buy using mixed gas comprising the gas which contains only fluorine among halogen elements and no carbon, the gas which contains carbon and no halogen element except fluorine, and the gaseous oxygen. SOLUTION: A reactive gas is excited and produced at low gas pressure through electron cyclotron resonance using magnetic field generated by a 1st magnetic coil 3 and a 2nd magnetic coil 4 for microwave and ECR plasma generation. As the reactive gas supplied from piping 10, the gas (SF6, etc.) is used which contains only fluorine among halogen elements and contains no carbon. Further, a mixed gas is used which comprises gas (CF4, C2F6, C4F8, CH4, etc.) containing carbon and no halogen element except fluorine and gaseous oxygen (O2 ). Alternatively the mixed gas is used which is produced by adding gaseous silicon tetrafluoride to the mixed gas.

6. 发明专利

JPH0883692A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH0883692A
公开(公告)日：1996-03-26
申请号：JP21705894
申请日：1994-09-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIMADA MASARU , ONO TOSHIRO , NISHIMURA HIROSHI , MATSUO SEITARO
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE: To generate plasma of high density by providing two microwave waveguides, and determining the sum of each distance from a branch circuit to a microwave introducing port at integer times of 1/2 of microwave length γin the waveguide. CONSTITUTION: Vacuum waveguides 18, 19 are arranged respectively in such a manner that a microwave traveling direction inside thereof is perpendicular to an outside magnetic field and a microwave electric field is parallel to the outside magnetic field. Microwave introducing windows 20, 21 for maintaining vacuum are equipped on one ends thereof and the other ends are connected to a connection pipe 22. A microwave introducing port 23 is communicated with the vacuum waveguides 18, 19 via the connection pipe 22. Magnetic coils 24 are installed around a plasma generation chamber 6 and divided into an upper and lower parts. The vacuum waveguides 18, 19 are installed between the divided magnetic coils 24. Since the vacuum waveguides 18, 19 are installed between the divided magnetic coils 24, the microwave introducing windows 20, 21 can be arranged at positions distant from the plasma to reduce adherence of a conductive film.

7. 发明专利

JPH0878333A PLASMA APPARATUS FOR FORMATION OF FILM 失效
公开(公告)号：JPH0878333A
公开(公告)日：1996-03-22
申请号：JP21357194
申请日：1994-09-07
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ONO TOSHIRO , WATANABE IWAO , SHIMADA MASARU , MATSUO SEITARO
IPC分类号： H01L21/205 , C23C14/34 , H01L21/203 , H01L21/31
摘要： PURPOSE: To obtain a plasma apparatus by which a film is formed highly uniformly and with high efficiency in a large-area region when a sputtering operation is performed by using ions in a plasma. CONSTITUTION: A plasma chamber 1 and a film-formation chamber 2 are evacuated to produce a high vacuum by means of an evacuation system 12. Ar gas is introduced from a gas introduction system 10. An ECR plasma is generated in the plasma chamber 1 by a magnetic field which is formed of microwaves introduced from a microwave power supply 15 via a square waveguide 4 and a microwave introduction window 3 and of electric power supplied to a magnetic coil 9 by a coil power supply 14. A rotation device 16 by which a sample stand 7 is arranged on the rotation symmetric axis of a target 11, by which the rotation symmetric axis of the sample stand 7 is tilted with reference to the rotation symmetric axis of the target 11 and which is tilted and turned in such a way that the point of intersection of the rotation symmetric axis of the target 11 with the rotation central axis of the sample stand 7 is situated in the opposite direction of the target 11 with reference to a sample substrate 8 is installed.

8. 发明专利

JP2003247065A THIN FILM DEPOSITION APPARATUS 审中-公开
公开(公告)号：JP2003247065A
公开(公告)日：2003-09-05
申请号：JP2002043629
申请日：2002-02-20
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT AFTY CORP
发明人： JIN YOSHITO , SHIMADA MASARU , MATSUO SEITARO , ONO TOSHIRO
IPC分类号： C23C14/35 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a thin film deposition apparatus which can deposit a thin film of high quality in a highly uniform manner at a high speed by placing a plurality of materials for film deposition in one vacuum chamber. SOLUTION: In this thin film deposition apparatus to deposit a thin film on a substrate by sputtering particles of the materials for depositing the film from a plurality of sputtering sources by using ions of plasma flow, a plasma generating means generates plasma by the electronic cyclotron resonance discharge, the axes of rotational symmetry of a target are intersected with each other on the axis of rotation of a substrate sample table in the plurality of sputtering sources, and inclined with respect to the axis of rotation of a rotary sample table, and the substrate sample table comprises a rotating means which rotates the target in an inclined manner so that the intersection of the axis of rotational symmetry of the target with the axis of rotation of the substrate sample table is located in the direction opposite to the target with respect to the sample substrate for depositing the film, and a moving means to move the substrate sample table in the vertical direction. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2003161829A OPTICAL MULTILAYER FILM FILTER 审中-公开
公开(公告)号：JP2003161829A
公开(公告)日：2003-06-06
申请号：JP2001360359
申请日：2001-11-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIMADA MASARU , JIN YOSHITO , KATO JUNICHI , ONO TOSHIRO
IPC分类号： G02B5/28
摘要： PROBLEM TO BE SOLVED: To provide a Fabry-Perot optical multilayer film filter of a multi- cavity constitution satisfying transmission characteristics required by optical multiplex communication, by regulating the shape of a transmission spectrum. SOLUTION: The Fabry-Perot optical multilayer filter has the multi-cavity constitution for connecting a plurality of laminates alternately laminating a plurality of first optical medium layers comprising a first optical medium and a plurality of second optical medium layer comprising a second optical medium, having higher refractiveness than the first optical medium layer through the cavity layer comprising a first optical medium layer or a second optical medium layer. At least one layer among the second optical medium layers in between the cavity layers is formed of a third optical medium layer, having higher index of refraction than that of the second optical medium layer. COPYRIGHT: (C)2003,JPO

10. 发明专利

JPH07221021A METHOD FOR DEPOSITING PLASMA 失效
公开(公告)号：JPH07221021A
公开(公告)日：1995-08-18
申请号：JP14068594
申请日：1994-06-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI CHIHARU , ONO TOSHIRO , MATSUO SEITARO
IPC分类号： C23C14/35 , C23C16/50 , C23C16/511 , H01L21/203 , H01L21/205
摘要： PURPOSE:To make it possible to promote reaction process in film formation, in which an oxide film is formed under oxygen partial pressure in a given range by applying a voltage larger than a given voltage that raises a current abruptly at a target electrode in a high voltage region. CONSTITUTION:A target electrode 15 is modified in the structure. A magnetic coil 11 generates a divergence field and the target electrode 15 has a partial magnetic field (B), in which part of magnetic flux generated from a certain part of the sputtering surface returns to another part thereof in the vicinity of a sputtering surface of the target electrode 15. The target electrode 15 is made of metal. In addition, a voltage larger than a given voltage that raises a current abruptly at the target electrode 15 in a voltage region of 100V or above is applied so that the oxygen partial pressure is adjusted to about 1 to 3X10 Pa while an oxide film is formed.

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