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1. 发明专利

JP2003269924A DEVICE AND METHOD FOR MONITORING FILM THICKNESS 审中-公开
公开(公告)号：JP2003269924A
公开(公告)日：2003-09-25
申请号：JP2002075524
申请日：2002-03-19
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT FANET SYSTEMS CORP , NTT AFTY CORP
发明人： JIN YOSHITO , SHIMADA MASARU , OCHIAI KATSUYUKI , TAZAWA SATOSHI , MATSUO SEITARO , ONO TOSHIRO
IPC分类号： G01B11/06 , C23C14/54 , C23C16/52 , G02B5/28
摘要： PROBLEM TO BE SOLVED: To realize a device and a method for monitoring film thickness that can precisely control the optical film thickness of a multi-layered film using λ 0 as a design wavelength to integer times of λ 0/4 . SOLUTION: The film thickness monitoring device and method are constituted while being characterized in that light from a light source 5 gets incident into a substrate 3 through an optical fiber 6, transmitted light from the substrate 3 is input into a spectroscope 10 through an optical fiber 9, a dispersed-spectral data of an output from the spectroscope 10 is input into a computing element 11, and whether the film thickness of the dielectric film is proper as a film thickness of a dielectric film of a constitutive element for the multi-layered film using the wavelength λ 0 as the design wavelength or not, using a difference F (feature quantity difference) between two integration values provided by integrating dispersed-spectral values in a low-frequency side wavenumber area and a high-frequency side wavenumber area symmetric around a wavenumber κ 0 corresponding to the λ 0 respectively in the respective wavenumber areas, in a process for film-forming the dielectric film by spattering from an ECR spattering source 4 on the substrate 3 inside a film forming chamber 2. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2003129236A THIN FILM FORMER 审中-公开
公开(公告)号：JP2003129236A
公开(公告)日：2003-05-08
申请号：JP2001326061
申请日：2001-10-24
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT AFTY CORP
发明人： JIN YOSHITO , ONO TOSHIRO , SHIMADA MASARU , MATSUO SEITARO
IPC分类号： G02B5/28 , C23C14/35 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To form a thin film in the state in which damages due to dust and abnormal plasma are suppressed. SOLUTION: A plasma confinement cylinder 113 that confines the scatter region of the ECR plasma delivered from a plasma formation chamber 102 is provided below the bottom of a target 105 (container 105a). The cylinder is made from a nonmagnetic material such as quartz or alumina. The cylinder 113 confines the scattering of a plasma stream delivered from the chamber 102 and passed through the region of the target 105 and confines the irradiation region of the plasma stream in the surface defined by the surface of a sample mount 104 within the region on the sample mount 104.

3. 发明专利

JPH11111686A LOW-PRESSURE PLASMA ETCHING METHOD 失效
公开(公告)号：JPH11111686A
公开(公告)日：1999-04-23
申请号：JP26858997
申请日：1997-10-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI CHIHARU , MATSUO SEITARO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain sufficiently high selective ratio by improving etching selectivity of a silicon oxide thin film with a given accuracy of patterning in etching semiconductor, and a metal through fluorine gas. SOLUTION: In an electron cyclotron resonance(ECR) system 1, a reaction gas is supplied to a plasma chamber 4 through a gas piping 5. A low pressure reaction gas is excited to generate ECR plasma by ECR, using a magnetic field formed by microwave and a first and a second magnetic coils 6 and 7 respectively. The ECR plasma is pulled out to a sample stage 9 as a plasma flow for use in etching by a diverging magnetic field formed in an etching chamber 8 by the magnetic coils 6 and 7. Then the reaction gas is set to consist of a gas, containing only fluorine among halogen elements but no carbon, a mixture gas containing carbon monoxide gas oxygen gas, and argon.

4. 发明专利

JPH10312947A X-RAY EXPOSURE SYSTEM AND METHOD 失效
公开(公告)号：JPH10312947A
公开(公告)日：1998-11-24
申请号：JP11959297
申请日：1997-05-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIMAZU NOBUO , SHIMIZU AKIRA , SAKAI TOMOAKI , TSUYUSAKI HARUO , FUKUDA MAKOTO , MATSUO SEITARO
IPC分类号： G21K5/02 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To enable a mask pattern to be transferred conforming to an alignment mark detection result by a method wherein a substrate which holds an X-ray transmitting film that forms the exposure region of an X-ray mask is fixed by the single point, and the fixed substrate is partly regulated in temperature. SOLUTION: A heating holder 101 fixes and holds an X-ray mask 102 by the single point with a vacuum chuck 103, a square opening is provided to the center of the X-ray mask 102. An X-ray transmitting thin film 105 which forms an exposure region is provided to the opening, and an exposure region as an LSI forming mask pattern formed of X-ray shielding material is arranged thereon. A heater 106 is uniformly arranged on the heating holder 101 which is located on a concentric circle in a region positioned out of the thin film. 105 of the X-ray mask 102, the surface of the heater 106 is made to approach the X-ray mask 102 or to come into contact with it, and the heater 106 is regulated in temperature so as not to warp the X-ray mask 102 and to prevent the X-ray mask 102 from being thermally deformed in the directions of X and Y.

5. 发明专利

JPH1022269A LOW-GAS-PRESSURE PLASMA ETCHING METHOD 失效
公开(公告)号：JPH1022269A
公开(公告)日：1998-01-23
申请号：JP17631396
申请日：1996-07-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI CHIHARU , JIN YOSHITO , ONO TOSHIRO , MATSUO SEITARO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform fine pattern formation with high etching selectivity buy using mixed gas comprising the gas which contains only fluorine among halogen elements and no carbon, the gas which contains carbon and no halogen element except fluorine, and the gaseous oxygen. SOLUTION: A reactive gas is excited and produced at low gas pressure through electron cyclotron resonance using magnetic field generated by a 1st magnetic coil 3 and a 2nd magnetic coil 4 for microwave and ECR plasma generation. As the reactive gas supplied from piping 10, the gas (SF6, etc.) is used which contains only fluorine among halogen elements and contains no carbon. Further, a mixed gas is used which comprises gas (CF4, C2F6, C4F8, CH4, etc.) containing carbon and no halogen element except fluorine and gaseous oxygen (O2 ). Alternatively the mixed gas is used which is produced by adding gaseous silicon tetrafluoride to the mixed gas.

6. 发明专利

JPH0883692A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH0883692A
公开(公告)日：1996-03-26
申请号：JP21705894
申请日：1994-09-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIMADA MASARU , ONO TOSHIRO , NISHIMURA HIROSHI , MATSUO SEITARO
IPC分类号： H05H1/46 , C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE: To generate plasma of high density by providing two microwave waveguides, and determining the sum of each distance from a branch circuit to a microwave introducing port at integer times of 1/2 of microwave length γin the waveguide. CONSTITUTION: Vacuum waveguides 18, 19 are arranged respectively in such a manner that a microwave traveling direction inside thereof is perpendicular to an outside magnetic field and a microwave electric field is parallel to the outside magnetic field. Microwave introducing windows 20, 21 for maintaining vacuum are equipped on one ends thereof and the other ends are connected to a connection pipe 22. A microwave introducing port 23 is communicated with the vacuum waveguides 18, 19 via the connection pipe 22. Magnetic coils 24 are installed around a plasma generation chamber 6 and divided into an upper and lower parts. The vacuum waveguides 18, 19 are installed between the divided magnetic coils 24. Since the vacuum waveguides 18, 19 are installed between the divided magnetic coils 24, the microwave introducing windows 20, 21 can be arranged at positions distant from the plasma to reduce adherence of a conductive film.

7. 发明专利

JPH0878333A PLASMA APPARATUS FOR FORMATION OF FILM 失效
公开(公告)号：JPH0878333A
公开(公告)日：1996-03-22
申请号：JP21357194
申请日：1994-09-07
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： ONO TOSHIRO , WATANABE IWAO , SHIMADA MASARU , MATSUO SEITARO
IPC分类号： H01L21/205 , C23C14/34 , H01L21/203 , H01L21/31
摘要： PURPOSE: To obtain a plasma apparatus by which a film is formed highly uniformly and with high efficiency in a large-area region when a sputtering operation is performed by using ions in a plasma. CONSTITUTION: A plasma chamber 1 and a film-formation chamber 2 are evacuated to produce a high vacuum by means of an evacuation system 12. Ar gas is introduced from a gas introduction system 10. An ECR plasma is generated in the plasma chamber 1 by a magnetic field which is formed of microwaves introduced from a microwave power supply 15 via a square waveguide 4 and a microwave introduction window 3 and of electric power supplied to a magnetic coil 9 by a coil power supply 14. A rotation device 16 by which a sample stand 7 is arranged on the rotation symmetric axis of a target 11, by which the rotation symmetric axis of the sample stand 7 is tilted with reference to the rotation symmetric axis of the target 11 and which is tilted and turned in such a way that the point of intersection of the rotation symmetric axis of the target 11 with the rotation central axis of the sample stand 7 is situated in the opposite direction of the target 11 with reference to a sample substrate 8 is installed.

8. 发明专利

JPH0652758B2 失效
公开(公告)号：JPH0652758B2
公开(公告)日：1994-07-06
申请号：JP2631987
申请日：1987-02-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KANAI MUNENORI , MATSUO SEITARO , ISHIHARA SUNAO , KINOSHITA HIROO
IPC分类号： H01L21/683 , B23Q3/15 , H01L21/68 , H02N13/00

9. 发明专利

JPH067573B2 失效
公开(公告)号：JPH067573B2
公开(公告)日：1994-01-26
申请号：JP14903683
申请日：1983-08-15
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： EBARA KOHEI , MURAMOTO SUSUMU , MATSUO SEITARO
IPC分类号： H01L21/76 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/762

10. 发明专利

JPH0525645A PLASMA TREATING DEVICE 失效
公开(公告)号：JPH0525645A
公开(公告)日：1993-02-02
申请号：JP2939591
申请日：1991-01-30
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： MATSUO SEITARO , KIUCHI MIKIHO , NISHIMURA HIROSHI
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To subject a sample to a treatment by irradiation with gas converted to plasma by electron cyclotron resonance. CONSTITUTION:Currents for generating magnetic fields are respectively supplied to 1st and 2nd coils 51, 52 for generating magnetic fields. The respective numbers of turns, shapes and positions of these 1st and 2nd coils 51, 52 for generating magnetic fields are so set that the equal magnetic field intensity plane Q in the synthesized magnetic field of the magnetic fields respectively generated from the coils 51, 52 for generating magnetic fields constitutes the nearly flat surface along a microwave introducing window 5 of a plasma forming chamber 1 in the position of this microwave introducing window 5 or near this position or the surface projecting to an aperture 22 side for taking out the plasma.

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