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1. 发明专利

JPH1151885A SECONDARY ION MASS SPECTROMETRY 失效
公开(公告)号：JPH1151885A
公开(公告)日：1999-02-26
申请号：JP20880797
申请日：1997-08-04
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： AZUMA YASUHIRO , HONMA YOSHIKAZU , OKABE MIYOSHI , OCHIAI SEITA , KUROSAWA MASARU
IPC分类号： G01N23/225 , G01N27/62 , H01J37/244 , H01J37/252
摘要： PROBLEM TO BE SOLVED: To provide a method capable of simply, quickly precisely and determining the concentration of an analyzed element in the secondary ion mass spectrometry determining the concentration of the analyzed element of an analyzed specimen containing an internal reference element of the known concentration. SOLUTION: An ion intensity ratio IA(E1 )/IM(E1 ) of an analyzed element A and an internal reference element M in secondary ion energy E1 of 50 eV or more, and another ion intensity ratio IA(E2 )/(E2 ) of the element A and the element M in secondary ion energy E2 different from 50 eV or more are obtained by measurement. The concentration cA of the analyzed element A is found by the concentration of the element A determined by the kind of the element A, the kind and the concentration cM of the element M and the energies E1 , E2 and the function relation between IA(E1 )/IM(E1 ) and IA(E2 )/IM(E2 ).

2. 发明专利

JPH08158042A GROWTH OF GERMANIUM THIN FILM 失效
公开(公告)号：JPH08158042A
公开(公告)日：1996-06-18
申请号：JP30243494
申请日：1994-12-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HONMA YOSHIKAZU
IPC分类号： C23C14/14 , C23C14/58 , H01L21/203
摘要： PURPOSE: To prepare a flat high purity single crystal germanium thin film having an optional film thickness by depositing an amorphous germanium thin film on a silicon substrate, adsorbing a group III or V element thereon, and after that, heat-treating the substrate. CONSTITUTION: After the surface of the silicon substrate is cleaned, the germanium thin film in amorphous state is deposited in a desired film thickness. The group III element or the group V element such as arsenic is adsorbed on the surface. Next, the substrate is heated at 200-650 deg.C. By the heating, crystallization of the germanium thin film is started from the boundary on the substrate by solid epitaxial growth to form the whole thin film into a single crystal. The adsorbed group III or V element has a function of changing the surface energy of germanium or suppressing the diffusion of surface atoms.

3. 发明专利

JPH08138986A SURFACE TREATMENT METHOD OF SILICON SUBSTRATE 失效
公开(公告)号：JPH08138986A
公开(公告)日：1996-05-31
申请号：JP11310495
申请日：1995-05-11
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HONMA YOSHIKAZU , OGINO TOSHIRO
IPC分类号： H01L21/02
摘要： PURPOSE: To obtain a surface treatment method in which an atomic step is arranged in a designated position over the whole face of a wafer by a method wherein uneven parts which regulate a motion at the atomic step are formed in advance on a silicon substrate and a heat treatment is executed in an ultrahigh vacuum or an inert gas which has an equivalent function. CONSTITUTION: Fine uneven parts in a pattern corresponding to the structure of a desired atomic step 7 are formed on the main face of a wafer. After a cleaning operation, a heat treatment is executed for five minutes under a vacuum pressure of 10 - Torr and at 1200 deg.C. Then, silicon atoms on the surface are moved so as to flatten the uneven parts on the surface of the wafer. When a substrate temperature is lowered, a step bunch 9 is arranged in a position in which the row of small holes 6 has been formed first, and the wafer in which the small holes 6 have been extinguished completely is obtained. By such a surface treatment method, the atomic step 7 which exists on the surface can be gathered in a designated position on the wafer.

4. 发明专利

JPH06273289A STANDARD SAMPLE 失效
公开(公告)号：JPH06273289A
公开(公告)日：1994-09-30
申请号：JP6064093
申请日：1993-03-19
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKENAKA HISATAKA , HONMA YOSHIKAZU , ISHII YOSHIICHI , MARUO TETSUYA , KAWAMURA TOMOAKI
IPC分类号： G01N1/00 , G01N23/225 , H01J49/02
摘要： PURPOSE:To improve the precision in the calibration of the resolving power of a secondary ion mass spectrum analyzer and evaluate the ion beam inductive diffusion by forming a standard sample by laminating a plurality of substance layers containing metal isotopes as main component. CONSTITUTION:A standard sample is formed by laminating a plurality of substance layers containing metal isotope as main constituent. For example, a lamination film which is formed by laminating three layers in each of the 58 Ni layers and 62 Ni layers having each prescribed thickness on a Si substrate by the sputtering method, and the standard sample is obtained. When this standard sample is used in the calibration of the resolving power of a secondary ion mass spectrum analyzer, the chemical property of the substance layer is perfectly same, and the interface effect and the matrix effect dissipate, and the increase/decrease of the abnormal secondary ion intensity are eliminated, and the secondary ion intensity distribution having high precision can be measured. Further, when the ion intensity is measured, carrying out the sputter etching of the standard sample in the depth direction, the ion contained in the second substance layer is diffused into the first substance layer and detected, and the ion beam inductive diffusion can be evaluated.

5. 发明专利

JPH05308070A 失效
公开(公告)号：JPH05308070A
公开(公告)日：1993-11-19
申请号：JP13780792
申请日：1992-04-30
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HONMA YOSHIKAZU , SUZUKI MINEHARU , TAKAOKA HIDETOSHI , KUROSAWA MASARU
IPC分类号： H01L21/316
摘要： PURPOSE:To form silicon oxide film on a silicon substrate by the thermal oxidation method so that an interface with a sufficient flat property is formed at an atom level in reference to the silicon substrate. CONSTITUTION:A flattening treatment is performed to the surface of a silicon substrate and silicon oxide film is formed on the surface of the flattened surface of the silicon substrate by the thermal oxidation method. The flattening treatment for the surface of the silicon substrate is performed at a temperature which is equal to or less than 300 deg.C and equal to or more than 1,100 deg.C within an extremely high vacuum.

6. 发明专利

JPH0312233B2 失效
公开(公告)号：JPH0312233B2
公开(公告)日：1991-02-19
申请号：JP4393685
申请日：1985-03-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HONMA YOSHIKAZU , ISHII YOSHIICHI
IPC分类号： F04B37/08 , B01D8/00

7. 发明专利

JPS61203548A DIFFERENTIAL EXHAUSTING DEVICE 失效
公开(公告)号：JPS61203548A
公开(公告)日：1986-09-09
申请号：JP4393585
申请日：1985-03-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HONMA YOSHIKAZU , ISHII YOSHIICHI
IPC分类号： H01J37/18 , F15D1/02 , G01N23/00 , H01J37/09 , H01J37/252
摘要： PURPOSE:To obtain a differential exhausting device having high capacity for blocking flow-in of gas molecules from particle source side to the specimen chamber side by arranging a cryo panel to be cooled through cooling means and enabling catching of gas molecules. CONSTITUTION:A particle source 1 such as secondary ion mass spectrograph and a specimen chamber 7 are coupled through a differential exhausting device comprised of an exhausting system 3 employing a vacuum exhausting pump and a cryo panel disc 11 which will function as an orifice and a cryo pump. Here, the cryo panel 11 is coupled to the cold head 13 of helium refrigerator 12 while surrounded by a shielding board 14 and arranged through a gas flow blocking board 15 in an outer tube 6. The gas molecules 16 incident to the surface of said panel 11 will condense onto the panel face thus to flow only such gas molecules 17 as directly incident to the opening into the specimen chamber 7. Consequently, the vacuum in the specimen chamber 7 is improved considerably resulting in improvement of analyzing accuracy.

8. 发明专利

JPH0763710A STANDARD SAMPLE 失效
公开(公告)号：JPH0763710A
公开(公告)日：1995-03-10
申请号：JP21115993
申请日：1993-08-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKENAKA HISATAKA , HONMA YOSHIKAZU , SUZUKI MINEHARU , KUROSAWA MASARU , KATO MASAAKI
IPC分类号： G01N1/00 , G01N23/22
摘要： PURPOSE:To accurately evaluate a solving power of an Auger electron spectral analysis method and a secondary ion mass analysis method by laminating a layer comprising amorphous or polycrystalline material several times to make a standard sample. CONSTITUTION:The use of a layer comprising amorphous or polycrystalline material minimizes the anisotropy to allow the formation of a standard sample of a laminated film with a higher degree of homogeneity. The etching of the sample can reduce problems of changes and increase in surface roughness in etching rate depending on the direction and angle of incidence of ions for etching of a crystal axis. When a film of such a lamination structure is applied as standard sample for an Auger electron spectral analysis and a secondary ion mass analysis method, the relationship can be determined between the angle of incidence and the accuracy of element concentration distribution in and the direction of depth. The accuracy intrinsic to the analysis methods can be obtained when other material is analyzed.

9. 发明专利

JPH0620634A SCANNING ELECTRON MICROSCOPE 失效
公开(公告)号：JPH0620634A
公开(公告)日：1994-01-28
申请号：JP20059592
申请日：1992-07-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HONMA YOSHIKAZU , SUZUKI MINEHARU , MARUO TETSUYA , TOMITA MASAHITO
IPC分类号： H01J37/244 , H01J37/28
摘要： PURPOSE:To enable observation of atomic arrangement by providing an electrode for applying positive voltage on the reverse side of a detection means for sandwiching a sample when an electron beam is focused to scan the sample surface, and the secondary electron obtained at the time is put into the detection means, and the signal fro the detection means is displayed being synchronized with beam scanning to provide a scan image. CONSTITUTION:An electron beam 2 emitted from a field emission type electron gun 1 is focused by a condenser lens 3, deflected by a deflection coil 4, focused again by an objective lens 5, and is applied on the surface of a sample 7 put on a sample stage 6. A secondary element 8 is generated thereby from the surface of the sample 7, which is detected by a secondary electron detector 9, which is positioned in the side of the sample stage 6, and to which positive high voltage is applied, and the detection intensity is displayed on a CRT 1 while synchronizing with the scanning by the coil 4 of the beam 2, to provide a scan image. The same voltage as the drawing voltage of the detector 9 is supplied to an electrode 10 provided on the symmetric position of the detector 9 by which the sample 7 is sandwiched, to make the electric field around the sample 7 symmetric in terms of face.

10. 发明专利

JPH04269437A SCANNING ELECTRON MICROSCOPE 失效
公开(公告)号：JPH04269437A
公开(公告)日：1992-09-25
申请号：JP5061491
申请日：1991-02-22
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HONMA YOSHIKAZU , TOMITA MASAHITO , HAYASHI TAKAYOSHI
IPC分类号： H01J37/05 , H01J37/244 , H01J37/28
摘要： PURPOSE:To enable observation of atomic layer steps in a cristal by means of a scanning electron microscope. CONSTITUTION:In a scanning electron microscope which scans the surface of a samble 6 while collecting electron beams 2 finely, detects secondary electrons 7 generated then by means of a secondary electron detecting means 8, and is able to obtain the scanned image of the surface of the sample by means of the detected signal, a means 9 is provided for making the electron beams 2 incredent on the surface of the sample 6 at an angle of 30 deg. or more, arranging the secondary electron detecting means 8 in a direction at an angle of 45 deg. or more in relation to the normal line of the sample, and discharging the secondary electrons of low energy in a space between the secondary electron detecting means and sample.

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