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    • 4. 发明专利
    • DIFFERENTIAL PRESSURE SEALING METHOD
    • JPH02138467A
    • 1990-05-28
    • JP13736589
    • 1989-06-01
    • NIPPON STEEL CORP
    • ISHIKAWA YOSHIYASUOKAGO HARUHITOOKAMOTO MANABUNAGASHIMA SHOJI
    • C23C14/56
    • PURPOSE:To prevent the generation of flaws and stains on the treated surface of a strip, etc., by providing plural differential pressure vacuum chambers between a high-pressure vacuum treatment chamber and a low-pressure vacuum treatment chamber and controlling the pressures thereof to specific values at the time of subjecting the material, such as strip, to surface treatments in the two chambers of the different pressures. CONSTITUTION:The material to be treated, such as strip, is subjected to the surface treatment by a method, such as plasma CVD, in the high-pressure vacuum treatment chamber P1 and is then passed through slits S1 to S5 in the plural differential pressure chambers D1 to D4 and is subjected to the 2nd surface treatment by a method, such as sputtering, in the low- pressure vacuum treatment chamber P2. The pressure in the respective differential pressure chambers D1 to D4 are gradually lowered in this case; in addition, the pressure in the differential pressure chamber D1 adjacent to the high-pressure vacuum treatment chamber P1 is so controlled as to be higher than the pressure in the low-pressure vacuum treatment chamber P1. The pressure in the differential pressure D4 adjacent to the low-pressure vacuum treatment chamber P2 is so controlled as to be lower than pressure in the high-pressure vacuum treatment chamber P2, and the pressure differences between the respective differential pressure chambers are controlled to specified values. The intrusion of the treating gas and contaminants in the high-pressure vacuum treatment chamber P1 into the low-pressure vacuum treatment chamber P2 is prevented and, therefore, the surface-treated strip having the treated surface free from flaws and stains is obtd.
    • 6. 发明专利
    • MULTISTAGE PLASMA TREATMENT
    • JPH03287773A
    • 1991-12-18
    • JP8751290
    • 1990-04-03
    • NIPPON STEEL CORP
    • HAKODA YOSHIKAZUISHIKAWA YOSHIYASUTAKENOUCHI KOJI
    • C23C16/50C23C16/54
    • PURPOSE:To form a good-quality film at a high rate and to improve the treating efficiency at the time of depositing a thin film on a strip substrate to be treated in a multistage treating chamber by progressively increasing the pressure, supplied power and gas flow rate as the operating condition toward the succeeding treating chamber from the preceding treating chamber and carrying out plasma treatment. CONSTITUTION:A strip substrate 8 to be treated is passed through the treating chambers 2a, 2b and 2c and treated with plasma as follows. Namely, a film highly adhesive to the substrate is formed in the chamber 2a with the low pressure, low power and low gas flow rate (however the film forming rate is low). The film forming rate is increased with the medium pressure, medium power and medium gas flow rate in the chamber 2b. A film is formed at a high rate with the high pressure, high power and high gas flow rate in the chamber 2c. In this multistage plasma treatment, a good-adhesion film is formed at a high rate unlike the conventional method, the treating time is reduced, and the productivity is improved.