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1. 发明专利

JPH05308115A 失效
公开(公告)号：JPH05308115A
公开(公告)日：1993-11-19
申请号：JP13771292
申请日：1992-04-28
申请人： NIPPON DENSO CO
发明人： SUZUKI YASUTOSHI , AO KENICHI , NARITA RYOICHI , YOSHINO YOSHI , OMI YUJI
IPC分类号： C23C18/16 , H01G4/228 , H01L21/00 , H01L23/50 , H01L25/00 , H01L25/16 , H05K1/02 , H05K1/18 , H05K3/20 , H05K3/24 , H05K3/32 , H05K3/34
摘要： PURPOSE:To prevent the value of circuit design from changing, by reducing the resistance value of a bonding part between a plated lead frame and an electronic parts. CONSTITUTION:A chip capacitor 6 is connected with a Cu lead frame 1. Ag-Pd plated layers 5 on both sides of the chip capacitor 6 are electrically connected with the Cu lead frame 1, via Ag paste 4. Imide compound is added to the Ag paste, and an oxide film 3 on the surface of a phosphorus reduction nonelectrolytic Ni plated layer 2 is eliminated. Thereby, in a hybrid integrated circuit 30, the conductive state of a bonding surface of the Cu lead frame 1 to the chip capacitor 6 is improved, so that the resistance value between them can be restrained and irregularity of the resistance value can be eliminated.

2. 发明专利

JPS63246856A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63246856A
公开(公告)日：1988-10-13
申请号：JP8213587
申请日：1987-04-02
申请人： NIPPON DENSO CO , TORAY SILICONE CO
发明人： NARITA RYOICHI , TAKENAKA OSAMU , NEGITA JUNICHI , MAKINO TOMOATSU , MIYASE YOSHIYUKI , MATSUOKA HIROSHI , HANADA TSUNEO
IPC分类号： C08L83/07 , C08L83/05 , H01L23/28 , H01L23/29 , H01L23/31
摘要： PURPOSE:To make flux resistance excellent and to protect a semiconductor element sufficiently, by using silicone gel, which is obtained by hardening the composition of hardening polyorganosiloxane comprising a specified constituent components, as a coating means for the semiconductor element. CONSTITUTION:Silicon gel for coating a semiconductor element has a hardened composition of hardening polyorganosiloxane formed as follows. Straight-chain or molecular-chain polyorganohydrogensiloxane has such a quantity that a mol ratio of total hydrogen atoms that are bonded to silicon atoms with respect to total vinyl groups in the polyorganosiloxane component is 0.2-5.0. A plati num compound catalyst has a quantity imparting 5.0-200 wt.ppm platinum to the total compound of the silicone gel. The hardening polyorganosiloxane composition is constituted with polyorganosiloxane, said polyorganohydro gensiloxane and said catalyst. Said composition is hardened. In the hardening polyorganosiloxane composition used in this way, the constitution of the siloxane in the polyorganosiloxane, the composition of the siloxane in the polyorganohydrogensiloxane, the adding amount of the platinum compound catalyst and the like are adjusted. Therefore, flux resisting property can be made excellent.

3. 发明专利

JPS63165455A ADDITION-REACTIVE ORGANOPOLYSILOXANE COMPOSITION 失效
公开(公告)号：JPS63165455A
公开(公告)日：1988-07-08
申请号：JP31346286
申请日：1986-12-27
申请人： SHINETSU CHEMICAL CO , NIPPON DENSO CO
发明人： IKENO MASAYUKI , FUJIKI HIRONAO , INOMATA HIROSHI , TAKENAKA OSAMU , NEGITA JUNICHI , NARITA RYOICHI , MIYASE YOSHIYUKI
IPC分类号： C08L83/04 , C08K5/54 , C08K5/5425 , C08L83/05 , C08L83/07 , H01L23/29 , H01L23/31
摘要： PURPOSE:To obtain the titled composition capable of protecting or insulating an IC, etc., in high reliability without causing cure inhibition, insufficient cure at interface and lowering of hardness, etc., caused by soldering flux, by compounding a specific organic silicon compound to a base resin. CONSTITUTION:(A) 100pts.wt. of an organopolysiloxane expressed by the average unit formula I (R is alkenyl; R is univalent hydrocarbon group free from aliphatic unsaturated bond; 0 =2H atoms directly bonded to Si and expressed by formula II (0 group of the component A, (C) >=1ppm, especially 3-100ppm (based on the component A) of a platinum catalyst in terms of platinum element and (D) 0.05-20pts.wt., especially 2-10pts.wt. of a compound having the structure of formula III in the molecule (e.g. the compound of formula IV, formula V, etc.).

4. 发明专利

JPH0623780B2 失效
公开(公告)号：JPH0623780B2
公开(公告)日：1994-03-30
申请号：JP24585289
申请日：1989-09-21
申请人： NIPPON DENSO CO
发明人： KONDO MUNENARI , IMAI MASATO , NARITA RYOICHI , MAEDA TAKUSHI
IPC分类号： G01P15/02 , G01P1/02 , G01P15/08 , G01P15/09

5. 发明专利

JPH05129474A RESIN-SEALED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05129474A
公开(公告)日：1993-05-25
申请号：JP28519791
申请日：1991-10-30
申请人： NIPPON DENSO CO
发明人： NARITA RYOICHI , FUKUDA YUTAKA
IPC分类号： H01L23/24 , H01L23/29 , H01L23/31 , H01L23/42
摘要： PURPOSE:To compatiblly obtain a low-stress characteristic and high heat radiating characteristic against a semiconductor element by filling a silicone gel with a spherical heat-conductive filler at a filling rate at which the filler can satisfy certain conditions against the complex modulus of elasticity and coefficient of liner expansion of the resin used for sealing the semiconductor element. CONSTITUTION:This plastic molded type semiconductor device is provided with a thick film circuit board 2, semiconductor element 4 which is bonded onto the board 2 through bumps 5 which are in contact with a conductor section 4 in a state where the element 4 is faced to the substrate 2, and sealing resin material 10 used for sealing the element 4. A silicon gel which is filled with a spherical heat-conductive filler having a particle size smaller than the gap between the element 4 and board 2 is used as the sealing resin material 10. The filling rate of the silicone gel is set so that the rate can satisfy an inequality, alpha at 1Hz, 30 deg.C) and alpha respectively represent the complex modulus of elasticity and coefficient of linear expansion of the resin material 10. Therefore, both a low-stress characteristic and high heat radiating characteristic can be obtained against the semiconductor element 4.

6. 发明专利

JPH03107769A MANUFACTURE OF SEMICONDUCTOR ACCELERATION SENSOR 失效
公开(公告)号：JPH03107769A
公开(公告)日：1991-05-08
申请号：JP24585289
申请日：1989-09-21
申请人： NIPPON DENSO CO
发明人： KONDO MUNENARI , IMAI MASATO , NARITA RYOICHI , MAEDA TAKUSHI
IPC分类号： G01P15/02 , G01P1/02 , G01P15/08 , G01P15/09
摘要： PURPOSE:To eliminate characteristic variation of the sensor and improve its performance by smoothing the reverse surface of a substrate and preventing the weld strain of the substrate which is generated by subsequent projection welding from being propagated. CONSTITUTION:A lead hole 32 is formed in a step 21 as the substrate and a lead terminal 34 enables electric contacting with the outside; and a cantilever beam 28 which has a piezoelectric resistance layer 29 is formed on a sensor chip 27 which is joined with an adhesive across a thick film substrate 23 and a silicone pedestal on the top surface of the stem 21. Then a shell 30 is sealed on the surface of the stem 21 so as to charge silicone oil 31 airtightly as damping liquid for preventing the beam 28 from resonating. The reverse surface of the stem 21 of this sensor is polished and flattened before the projection welding to carry out the welding while the stem 21 is not caused to curve even against large pressure. Therefore, the welding strain which is generated is prevented from being propagated to the chip 27.

7. 发明专利

JPS62149157A SEALING STRUCTURE OF SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS62149157A
公开(公告)日：1987-07-03
申请号：JP21749086
申请日：1986-09-16
申请人： NIPPON DENSO CO
发明人： NARITA RYOICHI , SONOBE TOSHIO , ITO CHIKASHI , ISHIKAWA JUNJI , TAKENAKA OSAMU , SUGIURA JUNJI
IPC分类号： H01L23/29 , C08L83/07 , H01L21/56 , H01L21/60 , H01L23/24 , H01L23/31
摘要： PURPOSE:To prevent damage of a semiconductor element and a bump electrode part, by using stable silicone gel characterized by low complex elastic modulus and little change in physical properties, and sealing a semiconductor element, on which the bump electrode is formed. CONSTITUTION:A hybrid IC is constituted by a flip chip IC 1, on which a solder bump 3 is formed, a thick film circuit substrate 1, a sealing material 4 and the like. Owing to the thermal stress of the hybrid IC, there are shearing strain deltaS due to the difference in thermal expansion coefficients between the IC 1 and the substrate 2 and tensile strain deltaE, by which the IC 1 is pushed up due to the thermal expansion of the material 4 that has entered in a gap 9. When the value of the strain deltaE is made smaller than the value deltaS, a thermal fatigue life is improved. The pushing-up force F is obtained as functions of the Young's modulus of the material (silicone gel) 4, the complex elastic modulus G with respect to viscosity and the size of the chip. When the upper limit of the modulus G obtained from the chip size is 5,000dyn/cm , the silicone gel 4, in which the ratio between ethylene and ethane is within 20%, is used.

8. 发明专利

JPS61261674A IGNITION DISTRIBUTOR FOR INTERNAL COMBUSTION ENGINE 失效
公开(公告)号：JPS61261674A
公开(公告)日：1986-11-19
申请号：JP10287585
申请日：1985-05-15
申请人： NIPPON DENSO CO
发明人： NAKAMURA NAOTAKA , MIYAMOTO YUMI , NARITA RYOICHI
IPC分类号： F02P7/02
摘要： PURPOSE:To obtain a sufficient shield effect, by surely suppressing generation of a radio noise, emitted from a distributor rotor and a fixed electrode, by contact with fellow metallic fibers mixed in resin forming constitutional parts of a distributor. CONSTITUTION:A distributor cap 1, consisting of high voltage durable insulating resin, provides a single center electrode 1a and a plurality of fixed electrodes 1b. And the distributor cap 1 integrally forms a radio noise shielding member 2 covering the periphery of the distributor cap 1, here the shielding member 1 is formed by conductive resin in which metallic fiber 2b, consisting of brass and iron or the like, is mixed, for instance, about 15% by volume in crystalline resin 2a with a thermal deformation temperature of 140 deg.C or more. While the distributor cap 1 is covered on the opening end of a metallic distributor housing 3. Further a rotor electrode 4a is fixed to the upper end of a distributor rotor 4 rotated and driven by an internal combustion engine, and a distributor, opposing the point end of said rotor electrode 4a to the fixed electrodes 1b, distributes high voltage from the center electrode 1a to each fixed electrode 1b.

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