专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH02201166A SEMICONDUCTOR ACCELERATION SENSOR 失效
公开(公告)号：JPH02201166A
公开(公告)日：1990-08-09
申请号：JP2044789
申请日：1989-01-30
申请人： NIPPON DENSO CO
发明人： YAMADA KENJI , MAEDA TAKUSHI , SAWAMOTO SETSUO
IPC分类号： G01P15/12 , G01P15/08
摘要： PURPOSE:To obtain a semiconductor acceleration sensor in which degassing is remarkably easy by providing a degassing hole to permit an internal space and an external space to degassably communicate in a joining part of a substrate and a base seat. CONSTITUTION:A degassing hole 3b is provided in the joining part of a substrate 2 and a base seat 3. A sub-assembly composed of the substrate 2, the base seat 3 and a semiconductor acceleration sensor plate 4 is bonded to a stem 1, next, a case 5 is held so as to be made into an upper side opening, and a damping liquid 6 is injected in a prescribed quantity into the case 5. Thereafter, the sub-assembly is made into a lower side, the stem 1 is lowered onto the case 5, and the sub-assembly is calmly dipped in the damping liquid 6. Then, the damping liquid 6 flows from a gap 4b of the sensor plate 4 into an inner cavity 3a, and along with it, an air in the inner cavity 3a is degassed through the degassing hole 3b to the external part of the subassembly. Consequently, by a specific gravity difference between the damping liquid 6 and air, the air of the inner gravity 3a can be rapidly degassed.

2. 发明专利

JPH0745642A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0745642A
公开(公告)日：1995-02-14
申请号：JP18971193
申请日：1993-07-30
申请人： NIPPON DENSO CO
发明人： ECHIGO SUSUMU , NAGAYAMA YOSHITAKA , MAEDA TAKUSHI , YAMADA TOSHITAKA , KITANO MASAHIKO
IPC分类号： H01L21/52 , G01L1/22 , G01P1/00 , G01P1/02 , G01P15/00 , H01L23/544
摘要： PURPOSE:To simultaneously eliminate both the stress applied to a stress detecting sensor element from a substrate side due to a temperature change when the sensor element is attached on the substrate with a bonding agent for semiconductors and insufficient bonding at the time of wire bonding. CONSTITUTION:In a semiconductor device in which a stress detecting sensor element 1 is attached on a substrate 2, a bonding agent for semiconductors prepared by mixing resin beads 4 in a base bonding agent 3 is used.

4. 发明专利

JPH03107769A MANUFACTURE OF SEMICONDUCTOR ACCELERATION SENSOR 失效
公开(公告)号：JPH03107769A
公开(公告)日：1991-05-08
申请号：JP24585289
申请日：1989-09-21
申请人： NIPPON DENSO CO
发明人： KONDO MUNENARI , IMAI MASATO , NARITA RYOICHI , MAEDA TAKUSHI
IPC分类号： G01P15/02 , G01P1/02 , G01P15/08 , G01P15/09
摘要： PURPOSE:To eliminate characteristic variation of the sensor and improve its performance by smoothing the reverse surface of a substrate and preventing the weld strain of the substrate which is generated by subsequent projection welding from being propagated. CONSTITUTION:A lead hole 32 is formed in a step 21 as the substrate and a lead terminal 34 enables electric contacting with the outside; and a cantilever beam 28 which has a piezoelectric resistance layer 29 is formed on a sensor chip 27 which is joined with an adhesive across a thick film substrate 23 and a silicone pedestal on the top surface of the stem 21. Then a shell 30 is sealed on the surface of the stem 21 so as to charge silicone oil 31 airtightly as damping liquid for preventing the beam 28 from resonating. The reverse surface of the stem 21 of this sensor is polished and flattened before the projection welding to carry out the welding while the stem 21 is not caused to curve even against large pressure. Therefore, the welding strain which is generated is prevented from being propagated to the chip 27.

你已经成功收藏专利！

检索式保存成功!

IPRDB