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    • 2. 发明专利
    • Wearable tool with information communication system for visually impaired person
    • 具有视觉障碍人士信息通信系统的耐磨工具
    • JP2006081693A
    • 2006-03-30
    • JP2004268935
    • 2004-09-15
    • Yasuhiko HayashiMiyabi System:KkSeiwa Electric Mfg Co LtdSunway Burekkusu:Kk星和電機株式会社有限会社ミヤビシステム靖彦 林株式会社 サンウェイブレックス
    • FUKUHARA TOSHIHIKOHAYASHI YASUHIKOYAMASHITA MASAHIROMITSUMA KENICHI
    • A61F9/08G08G1/095
    • PROBLEM TO BE SOLVED: To provide a wearable tool with an information communication system for a visually impaired person which can be carried by the visually impaired person easily and which allows the person to recognize a visual light information signal transmitted from a traffic light, or the like, easily as sounds.
      SOLUTION: Spectacles 10 with information communication system comprises a spectacle frame 11 having an ordinary shape, a pair of right and left light receiving elements 15a and 15b arranged on lens sections 12 of the spectacle frame 11, a pair of right and left signal processing sections 21a and 21b arranged on temples 13 of the spectacle frame 11, and a pair of right and left earphones 18a and 18b. The signal processing sections 21a and 21b have demodulators 22a and 22b for demodulating modulated pulse signals converted by the light receiving elements 15a and 15b and amplifiers 23a and 23b for amplifying the demodulated signals. The signal processing sections 21a and 21b have storage batteries 26 as power sources for supplying electric power to the demodulators 22a and 22b.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种可穿戴工具,其具有用于视障者的信息通信系统,其可以容易地由视障者承载,并且允许该人识别从交通灯发送的视觉光信息信号 ,等等,容易地作为声音。 解决方案:具有信息通信系统的眼镜10包括具有普通形状的眼镜架11,布置在眼镜架11的透镜部分12上的一对左右光接收元件15a和15b,一对左右 布置在眼镜架11的镜腿13上的信号处理部分21a和21b以及一对​​左右耳机18a和18b。 信号处理部分21a和21b具有用于解调由光接收元件15a和15b转换的调制脉冲信号的解调器22a和22b以及用于放大解调信号的放大器23a和23b。 信号处理部分21a和21b具有作为向解调器22a和22b提供电力的电源的蓄电池26。 版权所有(C)2006,JPO&NCIPI
    • 3. 发明专利
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • JP2011054774A
    • 2011-03-17
    • JP2009202572
    • 2009-09-02
    • Denso CorpNagoya Institute Of Technology国立大学法人 名古屋工業大学株式会社デンソー
    • NAKAMURA KENJITOYAMA TETSUOTAKIGAWA KENJIHAYASHI YASUHIKO
    • H01L21/368H01L21/336H01L29/786H01L51/05H01L51/40H01L51/42H01L51/50H05B33/10
    • Y02E10/549Y02P70/521
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which selective coating using a template is performed even when a semiconductor material has a high molecular weight. SOLUTION: In a state wherein a gate insulating film 2 and films of a source electrode 3c and a drain electrode 3d are formed on a substrate 1, a first self-assembled monolayer (first SAM film 5) having a perfluoroalkyl group is formed on a surface of the substrate 1. Then a region 5a of the first SAM film 5 to be coated with a polymeric organic semiconductor film is removed through ozone processing, and a second self-assembled monolayer (second SAM film 6) having a phenethyl group is formed in the region 5a. Then, the substrate 1 is preheated at 40°C, dipped in a poly(3-hexylthiophene)(P3HT) 0.5 wt.% dichlorobenzene solution 8 temperature-controlled to 40°C, and then lifted vertically to manufacture a thin film transistor. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种制造半导体器件的方法,即使当半导体材料具有高分子量时,也使用模板进行选择性涂层。 解决方案:在基板1上形成栅绝缘膜2和源电极3c和漏电极3d的膜的状态下,具有全氟烷基的第一自组装单层(第一SAM膜5)为 然后通过臭氧处理除去要涂覆有聚合有机半导体膜的第一SAM膜5的区域5a,并且将具有苯乙基的第二自组装单层(第二SAM膜6) 在区域5a中形成组。 然后,将基板1在40℃下预热,浸渍在温度​​控制在40℃的0.5重量%的聚(3-己基噻吩)(P3HT)0.5重量%二氯苯溶液8中,然后垂直升高以制造薄膜晶体管。 版权所有(C)2011,JPO&INPIT
    • 5. 发明专利
    • Method for producing carbon nanotube film
    • 生产碳纳米管膜的方法
    • JP2013006708A
    • 2013-01-10
    • JP2011138720
    • 2011-06-22
    • Denso Corp株式会社デンソーNagoya Institute Of Technology国立大学法人 名古屋工業大学
    • OSHIMA HISAZUMIHAYASHI YASUHIKOIIJIMA TORU
    • C01B31/02
    • PROBLEM TO BE SOLVED: To provide a method for producing a carbon nanotube film having excellent reproducibility, capable of spinning stably a carbon nanotube.SOLUTION: A metal catalyst is deposited on the surface of a planar substrate, and then the atmosphere of the substrate is changed as shown in Fig.1, to thereby produce a carbon nanotube film on the surface of the substrate. Namely, the atmosphere of the substrate is replaced with hydrogen gas, and the temperature of the substrate and its atmosphere is raised up to 500°C which is a metal catalyst activation temperature, and kept at the temperature for 3 minutes. Successively, the temperature of the substrate and its atmosphere is lowered to 200-500°C, and hydrocarbon gas is introduced into the atmosphere of the substrate. Then, after keeping the temperature of the substrate and its atmosphere as it is for 0-3 minutes, the temperature of the substrate and its atmosphere is raised up to 700°C which is a CNT synthesis temperature. The temperature of the substrate and its atmosphere is kept at 700°C for 10 minutes, while introducing the hydrocarbon gas therein, to thereby form a carbon nanotube film.
    • 解决问题:提供一种能够稳定地纺丝碳纳米管的碳纳米管膜的制造方法,其具有优异的再现性。 解决方案:在平面基板的表面上沉积金属催化剂,然后如图1所示改变基板的气氛,从而在基板的表面上形成碳纳米管膜。 即,用氢气代替基板的气氛,将基板及其气氛的温度升高至500℃,作为金属催化剂的活化温度,并保持3分钟。 接下来,将基板及其气氛的温度降低到200-500℃,将烃气体引入基板的气氛中。 然后,在保持基板的温度及其气氛0-3分钟后,将基板及其气氛的温度升高至作为CNT合成温度的700℃。 将基板及其气氛的温度在700℃下保持10分钟,同时在其中引入烃气体,从而形成碳纳米管膜。 版权所有(C)2013,JPO&INPIT
    • 8. 发明专利
    • Amorphous carbon semiconductor, method for manufacturing the same, photoelectric conversion element, and method for manufacturing photoelectric conversion element
    • 非晶碳半导体,其制造方法,光电转换元件和制造光电转换元件的方法
    • JP2012044079A
    • 2012-03-01
    • JP2010185788
    • 2010-08-23
    • Nagoya Institute Of TechnologyToyota Motor Corpトヨタ自動車株式会社国立大学法人 名古屋工業大学
    • YAMASHITA SEIJIHAYASHI YASUHIKO
    • H01L31/04
    • Y02E10/50
    • PROBLEM TO BE SOLVED: To provide an amorphous carbon semiconductor capable of simplifying manufacturing processes compared with conventional ones, a method for manufacturing the amorphous carbon semiconductor, a photoelectric conversion element using the amorphous carbon semiconductor, and a method for manufacturing the photoelectric conversion element.SOLUTION: The method for manufacturing the amorphous carbon semiconductor and the photoelectric conversion element comprises a step for supplying a radical generated by irradiating gas with a high frequency wave, and a heated fullerene to a vacuum deposition chamber; and a step for film-forming the amorphous carbon semiconductor through a step for reacting the radical with the fullerene supplied to the vacuum deposition chamber. The amorphous carbon semiconductor contains a material derived from the fullerene generated by breaking the fullerene structure, and the fullerene, and the photoelectric conversion element uses the amorphous carbon semiconductor as a p-type layer.
    • 要解决的问题:提供一种与常规方法相比能够简化制造工艺的无定形碳半导体,无定形碳半导体的制造方法,使用该无定形碳半导体的光电转换元件以及制造光电二极管的方法 转换元素。 解决方案:制造无定形碳半导体和光电转换元件的方法包括将通过用高频波照射气体产生的自由基和加热的富勒烯供应到真空沉积室的步骤; 以及通过使自由基与供给到真空沉积室的富勒烯反应的步骤来成膜非晶碳半导体的步骤。 无定形碳半导体包含衍生自通过破碎富勒烯结构产生的富勒烯的材料和富勒烯,并且光电转换元件使用无定形碳半导体作为p型层。 版权所有(C)2012,JPO&INPIT