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1. 发明专利

JP2009117707A Device, and manufacturing method of device 有权
标题翻译：器件和器件的制造方法
公开(公告)号：JP2009117707A
公开(公告)日：2009-05-28
申请号：JP2007290922
申请日：2007-11-08
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： UCHIUMI ATSUSHI , GOTO TAKAYUKI , IDE KENSUKE , TAKAGI HIDEKI , FUNAYAMA MASAHIRO
IPC分类号： H01L21/02
CPC分类号： H01L21/2007 , C03C27/06 , H01L24/28 , H01L24/31 , H01L24/75 , H01L24/83 , H01L31/0203 , H01L33/0079 , H01L2224/83099 , H01L2224/8385 , H01L2224/83894 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/0102 , H01L2924/01033 , H01L2924/0104 , H01L2924/0105 , H01L2924/01051 , H01L2924/01072 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/07802 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/3512 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a device having improved light transmissive property by bonding SiO 2 material substrates at room temperature with practical bonding strength, and to provide a manufacturing method of the device. SOLUTION: The device includes a first substrate 11 employing silicon dioxide as a main constituent, a second substrate 12 employing silicon, a compound semiconductor, silicon dioxide or fluoride as a main constituent, and a bonding intermediate layer 28 arranged between the first substrate 11 and the second substrate 12. The first substrate 11 is bonded to the second substrate 12 via the bonding intermediate layer 28 at room temperature. In this case, a selected material for the bonding intermediate layer 28 is an oxide, fluoride or nitride material having light transmissive property, different from the main constituent of the first substrate 11 and from the main constituent of the second substrate 12. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过实际的接合强度，在室温下通过粘合SiO 2 材料基板来提供具有改善的透光性的器件，并提供该器件的制造方法。解决方案：该装置包括采用二氧化硅作为主要成分的第一基板11，以硅，化合物半导体，二氧化硅或氟化物为主要成分的第二基板12，以及布置在第一基板11和第二基板12.第一基板11在室温下通过接合中间层28接合到第二基板12。在这种情况下，用于接合中间层28的所选择的材料是具有透光性的氧化物，氟化物或氮化物材料，其不同于第一基板11的主要部件和与第二基板12的主要部件不同。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2007324195A Device formed with room temperature bonding, method for manufacturing device, and room temperature bonding apparatus 有权
标题翻译：与室温结合形成的装置，制造装置的方法和室温结合装置
公开(公告)号：JP2007324195A
公开(公告)日：2007-12-13
申请号：JP2006149896
申请日：2006-05-30
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： UCHIUMI ATSUSHI , GOTO TAKAYUKI , IDE KENSUKE , FUNAYAMA MASAHIRO , TAKAGI HIDEKI
IPC分类号： H01L21/02
CPC分类号： B32B38/0008 , B23K20/02 , B23K20/22 , B32B37/14 , B32B2457/00 , B81C3/001 , B81C2203/032 , C23C14/14 , C23C14/3414 , C23C14/58 , Y10T428/31678
摘要： PROBLEM TO BE SOLVED: To provide a device that can be obtained by bonding a substrate formed of an unbondable material (for example, SiO 2 system material substrate) in the actual bonding strength with room temperature bonding process, and also to provide a method for manufacturing the same device. SOLUTION: An intermediate material layer 28 generating a bonding strength is formed at an interface 27 between a first substrate 11 and a second substrate 12, and a plurality of metal elements are included in this intermediate material layer. An existing ratio of a plurality of metal elements at the interface is controlled to 0.07 or more with an operation parameter during the sputtering process. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以通过将由不可键合材料（例如，SiO 2 系统材料基板）形成的基板以实际的接合强度与室温接合工艺，并且还提供用于制造相同装置的方法。解决方案：在第一基板11和第二基板12之间的界面27处形成产生接合强度的中间材料层28，并且在该中间材料层中包括多个金属元素。在溅射过程中，通过操作参数将界面处的多个金属元素的现有比率控制在0.07以上。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2014072249A Normal-temperature bonding device and normal-temperature bonding method 有权
标题翻译：正常温度结合器件和正常温度接合方法
公开(公告)号：JP2014072249A
公开(公告)日：2014-04-21
申请号：JP2012215151
申请日：2012-09-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： KINOUCHI MASAHITO , GOTO TAKAYUKI , TSUNO TAKESHI , UCHIUMI ATSUSHI , IDE KENSUKE , SUZUKI TAKENORI , TSUTSUMI KEIICHIRO , TAKAGI HIDEKI , KURASHIMA YUICHI
IPC分类号： H01L21/02 , B23K20/00
CPC分类号： B81C3/001 , B23K20/00 , B23K20/008 , B81C99/0025 , H01L21/2007 , H01L21/67092 , H01L21/67207
摘要： PROBLEM TO BE SOLVED: To more appropriately bond a plurality of substrates of a dissimilar material.SOLUTION: A normal-temperature bonding device comprises a first beam source 18, a second beam source 17, and a pressure-welding mechanism 15. The first beam source 18 emits a first activation beam Bb irradiated to a first surface of a first substrate 52. The second beam source 17 emits a second activation beam Ba irradiated to a second surface of a second substrate 42. The pressure-welding mechanism 15 bonds the first substrate 52 and the second substrate 42 by bringing the first surface into contact with the second surface after the first surface is irradiated with the first activation beam Bb and the second surface is irradiated with the second activation beam Ba. First irradiation irradiates the first surface with the first activation beam Bb. Second irradiation irradiates the second surface with the second activation beam Ba. The first irradiation and the second irradiation are separately performed.
摘要翻译：要解决的问题：更适当地粘合多种不同材料的基板。解决方案：常温接合装置包括第一光束源18，第二光束源17和压焊机构15.第一光束源18发射照射到第一基板52的第一表面的第一激活光束Bb。第二光束源17发射照射到第二基板42的第二表面的第二激活光束B.压焊机构15将第一激光束B 基板52和第二基板42通过在第一表面被第一激活光束Bb照射之后使第一表面与第二表面接触，并且第二表面被第二激活光束Ba照射。第一次照射用第一激活光束Bb照射第一表面。第二次照射用第二激活光束Ba照射第二表面。分别进行第一次照射和第二次照射。

4. 发明专利

JP2014160741A Normal-temperature bonding apparatus, normal-temperature bonding method, flattening apparatus, and flattening method 有权
标题翻译：正常温度接合装置，正常温度接合方法，平铺装置和平铺方法
公开(公告)号：JP2014160741A
公开(公告)日：2014-09-04
申请号：JP2013030405
申请日：2013-02-19
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： TSUNO TAKESHI , GOTO TAKAYUKI , UCHIUMI ATSUSHI , IDE KENSUKE , TAKAGI HIDEKI , KURASHIMA YUICHI , MAEDA ATSUHIKO
IPC分类号： H01L21/02 , B23K20/00 , B23K20/24 , B23K20/26
摘要： PROBLEM TO BE SOLVED: To improve bonding reliability when bonding a plurality of substrates together.SOLUTION: A normal-temperature bonding apparatus includes: an activation device 16 which emits activation beams Ba and Bb with which a first surface 50 of a first substrate 52 and a second surface 40 of a second substrate 42 are irradiated; and a press-contact mechanism 15 which bonds the first substrate 52 and the second substrate 42 together by bringing the first surface 50 and the second surface 40 into contact with each other after the first surface 50 and the second surface 40 are irradiated with the activation beams Ba and Bb. The activation beams Ba and Bb contain neon atoms.
摘要翻译：要解决的问题：提高将多个基板接合在一起时的接合可靠性。解决方案：常温接合装置包括：激活装置16，其发射激活光束Ba和Bb，第一基板52的第一表面50和照射第二基板42的第二表面40; 以及通过使第一表面50和第二表面40在第一表面50和第二表面40被激活之后使彼此接触而将第一基板52和第二基板42接合在一起的按压接触机构15 光束Ba和Bb。激活光束Ba和Bb含有氖原子。

5. 发明专利

JP2008062267A Method and apparatus for room temperature joining 有权
标题翻译：室温加热方法与装置
公开(公告)号：JP2008062267A
公开(公告)日：2008-03-21
申请号：JP2006241961
申请日：2006-09-06
申请人： Mitsubishi Heavy Ind Ltd , National Institute Of Advanced Industrial & Technology , 三菱重工業株式会社 , 独立行政法人産業技術総合研究所
发明人： GOTO TAKAYUKI , UCHIUMI ATSUSHI , IDE KENSUKE , TAKAGI HIDEKI , FUNAYAMA MASAHIRO
IPC分类号： B23K20/00 , B23K101/40 , C23C14/34 , H01L21/02
CPC分类号： H01L21/2007 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2201/36 , C23C14/16 , C23C14/3464 , C23C14/46
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for room temperature joining, which evenly form an intermediate material on the surface of a substrate, need no heating at the time of joining, and secure sufficient joint strength even in joining at room temperature. SOLUTION: The method for room temperature joining is used for joining a plurality of substrates 4 via an intermediate material at room temperature, and includes a step of forming intermediate materials on the to-be-joined surfaces of the substrates by subjecting a plurality of targets 7 to physical sputtering, and a step of activating the to-be-joined surfaces with ion beams. In this case, the targets subjected to physical sputtering are preferably composed of a plurality of kinds of materials. The intermediate materials are sputtered from a plurality of targets that are arranged in various directions as seen from the to-be-joined surfaces of the substrates, so that the intermediate materials are evenly formed on the to-be-joined surfaces. Further, since the intermediate materials are composed of a plurality of kinds of materials, the room temperature joining of the substrates that are hard to join with an intermediate material composed of a single kind of material is realized without requiring heating or excessive joining pressure at the time of joining. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供在基板表面上均匀地形成中间材料的室温接合方法和装置，在接合时不需要加热，并且即使在接合时也确保足够的接合强度在室温下。解决方案：常温接合方法用于在室温下通过中间材料接合多个基板4，并且包括在基板的被接合表面上形成中间材料的步骤，多个靶7进行物理溅射，以及利用离子束激活被接合面的工序。在这种情况下，物理溅射的靶优选由多种材料构成。中间材料从从基板的被接合面观察的各个方向上排列的多个靶溅射，使得中间材料均匀地形成在被接合面上。此外，由于中间材料由多种材料构成，所以在不需要加热或过度接合压力的情况下实现难以与单一材料组成的中间材料接合的基板的室温接合加入时间版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2014107393A Normal temperature bonding device, wafer having normal temperature bonding device and normal temperature bonding method 审中-公开
标题翻译：正常温度结合装置，具有正常温度结合装置的散热器和正常温度接合方法
公开(公告)号：JP2014107393A
公开(公告)日：2014-06-09
申请号：JP2012258771
申请日：2012-11-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： GOTO TAKAYUKI , TSUTSUMI KEIICHIRO , TSUNO TAKESHI , KINOUCHI MASAHITO , IDE KENSUKE
IPC分类号： H01L21/02 , B23K20/00
CPC分类号： H01L21/76251 , B23K15/0006 , B23K20/00 , B23K20/02 , B23K20/233 , B23K20/2333 , B23K20/2336 , B23K2201/40 , B32B15/01 , B32B37/06 , B32B37/18 , B32B38/0008 , B32B2457/14 , B81C1/00269 , H01L21/2007 , H01L21/67092 , H01L21/67748
摘要： PROBLEM TO BE SOLVED: To allow for bonding of a variety of material combinations becoming the components of a functional device.SOLUTION: A normal temperature bonding device comprises: a first substrate 51 having a first surface 51a; and a second substrate 52 having a second surface 52a being bonded to the first surface 51a. In the bonding of the first and second surfaces 51a, 52a, any one of the first and second surfaces 51a, 52a contains one n-th material such as silicon, SiO or GaN, and the other contains the other n-th material such as silicon, SiO2, quartz or Au, and there are at least 115 combinations of materials.
摘要翻译：要解决的问题：允许将各种材料组合成为功能装置的组件的结合。解决方案：常温接合装置包括：具有第一表面51a的第一基板51; 第二基板52具有与第一表面51a接合的第二表面52a。在第一表面51a和第二表面52a的接合中，第一表面51a和第二表面52a中的任何一个包含一个第n个材料，例如硅，SiO或GaN，另一个包含另一个第n个材料，例如硅，SiO 2，石英或Au，并且存在至少115种材料的组合。

7. 发明专利

JP2011134848A Bonding method and bonding device controller 有权
标题翻译：接合方法和接合装置控制器
公开(公告)号：JP2011134848A
公开(公告)日：2011-07-07
申请号：JP2009292313
申请日：2009-12-24
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUNO TAKESHI , KINOUCHI MASAHITO , GOTO TAKAYUKI , SUZUKI KITEN , IDE KENSUKE
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a method for aligning a bonding target faster. SOLUTION: The bonding method includes a step of photographing a first image reflecting a first guide pattern formed on a reference scale different from the bonding target by use of a first alignment camera 41-1, and photographing a second image reflecting a second guide pattern formed on the reference scale by use of a second alignment camera 41-2 and a step of aligning the first alignment camera 41-1 so that the first guide pattern is reflected in the first image when the second guide pattern is reflected in the second image. According to such a bonding method, the first alignment camera 41-1 and the second alignment camera 41-2 can faster be aligned as compared to aligning by using alignment marks formed in the bonding target, and a bonding substrate 32 and a substrate 34 to be bonded can faster be aligned. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种更快地对准接合目标的方法。解决方案：接合方法包括通过使用第一对准摄像机41-1拍摄反映形成在与接合目标不同的基准标尺上的第一引导图案的第一图像的步骤，并且拍摄反映第二对准图像的第二图像引导图案通过使用第二对准相机41-2在参考标尺上形成，以及将第一对准相机41-1对准的步骤，使得当第二引导图案被反射到第一引导图案时，第一引导图案被反射在第一图像中第二张图片。根据这种接合方法，与通过使用在接合靶中形成的对准标记的对准相比，第一对准照相机41-1和第二对准照相机41-2可以更快地对准，以及接合基板32和基板34 粘合可以更快地对齐。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010141092A Normal-temperature bonding device 有权
标题翻译：正温接合装置
公开(公告)号：JP2010141092A
公开(公告)日：2010-06-24
申请号：JP2008315431
申请日：2008-12-11
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： KINOUCHI MASAHITO , GOTO TAKAYUKI , TAWARA SATOSHI , TSUNO TAKESHI , UCHIUMI ATSUSHI , IDE KENSUKE , SUZUKI KITEN
IPC分类号： H01L21/02 , B23K20/00 , B23K101/40
CPC分类号： H01L21/6838 , B23K20/02 , B23K2201/40 , H01L21/67201 , Y10T156/10 , Y10T156/17
摘要： PROBLEM TO BE SOLVED: To improve reliability in wafer bonding, and to reduce manufacturing cost. SOLUTION: A normal-temperature bonding device 1 includes: a cartridge 11; a conveyance device for conveying the cartridge 11; a lower side stage for holding the cartridge 11; an upper side stage facing a wafer 50-1 mounted on the cartridge 11 when the lower stage holds the cartridge 11; and a compression-bonding mechanism for bringing the upper stage closer to the lower stage. The upper wafer 50-1 held to the upper stage is directly brought into contact with the upper stage. Thus, the conveyance device can convey the wafer 50-1 without direct contact with the wafer 50-1. The wafer 50-1 can be held to the lower stage without direct contact with the lower stage. As a result, the normal-temperature bonding device can prevent contamination of the wafer 50-1 to be bonded. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高晶片接合的可靠性，降低制造成本。常温接合装置1包括：盒11; 用于输送盒11的输送装置; 用于保持盒11的下侧台阶; 当下级保持盒11时，面对安装在盒11上的晶片50-1的上侧级; 以及用于使上层更靠近下级的压缩机构。保持在上层的上晶片50-1直接与上层接触。因此，输送装置可以不与晶片50-1直接接触而输送晶片50-1。可以将晶片50-1保持在下级而不与下级直接接触。结果，常温接合装置能够防止待接合的晶片50-1的污染。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2007140737A Shape correction method, molding die and production method for molded article 有权
标题翻译：形状校正方法，成型模具和成型制品的生产方法
公开(公告)号：JP2007140737A
公开(公告)日：2007-06-07
申请号：JP2005331352
申请日：2005-11-16
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： MIURA MASAMI , IDE KENSUKE , NAKAHAMA TAKESHI , NAKAHARA YOSHISATO , KONO TAKAYUKI , SATO HIROMASA , IZUMI MITSUHIKO
IPC分类号： G06F17/50 , B21D37/20 , B29C33/38
摘要： PROBLEM TO BE SOLVED: To provide a shape correction method capable of correcting a molding die model to shape suitable for press molding, a molding die manufactured on the basis of the molding die model corrected by the shape correction method, and a production method for the molding die allowing production of a high-quality molded article wherein a wrinkle or a crack is reduced by performing molding by use of the molding die.
SOLUTION: By correcting curved surface shape of a filet face of the molding die model to curved surface shape of a part of an elliptical torus, a shape model suitable for the press molding is made, the molding die is manufactured on the basis of the shape model, and the high-quality molded article is obtained by performing the press molding by use of the molding die.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种能够校正成型模具以形成适合于模压成型的形状校正方法，基于通过形状校正方法校正的成型模具模型制造的成型模具和生产通过使用成形模进行成型，可以制造成型品的高品质成型体的制造方法，其中皱纹或裂纹减少。解决方案：通过将成型模具模型的曲面的曲面形状校正为椭圆环的一部分的曲面形状，形成适合于压制成型的形状模型，基于该模具的制造的形状模型，并且通过使用模制模具进行压制成型来获得高质量的模制品。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006065716A Correction method for deformation error 审中-公开
标题翻译：变形误差校正方法
公开(公告)号：JP2006065716A
公开(公告)日：2006-03-09
申请号：JP2004249538
申请日：2004-08-30
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： YAMAMOTO HIDEAKI , IDE KENSUKE , ARAI EIJI , SHIRASE KEIICHI
IPC分类号： G05B19/404 , B23Q15/18
摘要： PROBLEM TO BE SOLVED: To provide a correction method for a deformation error capable of compensating static precision in the whole working area of a machine tool. SOLUTION: A three-dimensional finite element model for the whole machine tool is prepared, a temperature change in each nodal point of the finite element model is found by a nonstationary heat conduction analysis, a thermal deformation amount in the each nodal point is found based on the temperature change by a nonstationary finite element analysis (step S2), an error model is prepared based on the thermal deformation amount in the each nodal point, an error amount in the working area of the machine tool is calculated based on the error model to prepare a three-dimensional error map (step S4), a database is constructed based on the three-dimensional error map in every prescribed time interval (step S9), a correction amount for each shaft is found with respect to a lapse time and a position in the each shaft of constitutional machines (step S10), based on the database, when machining a work, and a command position for the machine tool is corrected based on the correction amount (step S11-S16). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够补偿机床整个工作区域的静态精度的变形误差的校正方法。解决方案：制备整个机床的三维有限元模型，通过非平稳热传导分析发现有限元模型的每个节点的温度变化，每个节点的热变形量基于通过非平稳有限元分析的温度变化（步骤S2）找到，基于每个节点中的热变形量准备误差模型，基于机床的工作区域中的误差量基于用于准备三维误差图的误差模型（步骤S4），在每个规定的时间间隔内基于三维误差图构建数据库（步骤S9），针对每个轴的每个轴找到校正量（步骤S10），基于数据库，当加工工件时，基于校正量来校正机床的指令位置（步骤S10） S11-S16）。版权所有（C）2006，JPO＆NCIPI

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