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1. 发明专利

JP2014072249A Normal-temperature bonding device and normal-temperature bonding method 有权
标题翻译：正常温度结合器件和正常温度接合方法
公开(公告)号：JP2014072249A
公开(公告)日：2014-04-21
申请号：JP2012215151
申请日：2012-09-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社 , National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： KINOUCHI MASAHITO , GOTO TAKAYUKI , TSUNO TAKESHI , UCHIUMI ATSUSHI , IDE KENSUKE , SUZUKI TAKENORI , TSUTSUMI KEIICHIRO , TAKAGI HIDEKI , KURASHIMA YUICHI
IPC分类号： H01L21/02 , B23K20/00
CPC分类号： B81C3/001 , B23K20/00 , B23K20/008 , B81C99/0025 , H01L21/2007 , H01L21/67092 , H01L21/67207
摘要： PROBLEM TO BE SOLVED: To more appropriately bond a plurality of substrates of a dissimilar material.SOLUTION: A normal-temperature bonding device comprises a first beam source 18, a second beam source 17, and a pressure-welding mechanism 15. The first beam source 18 emits a first activation beam Bb irradiated to a first surface of a first substrate 52. The second beam source 17 emits a second activation beam Ba irradiated to a second surface of a second substrate 42. The pressure-welding mechanism 15 bonds the first substrate 52 and the second substrate 42 by bringing the first surface into contact with the second surface after the first surface is irradiated with the first activation beam Bb and the second surface is irradiated with the second activation beam Ba. First irradiation irradiates the first surface with the first activation beam Bb. Second irradiation irradiates the second surface with the second activation beam Ba. The first irradiation and the second irradiation are separately performed.
摘要翻译：要解决的问题：更适当地粘合多种不同材料的基板。解决方案：常温接合装置包括第一光束源18，第二光束源17和压焊机构15.第一光束源18发射照射到第一基板52的第一表面的第一激活光束Bb。第二光束源17发射照射到第二基板42的第二表面的第二激活光束B.压焊机构15将第一激光束B 基板52和第二基板42通过在第一表面被第一激活光束Bb照射之后使第一表面与第二表面接触，并且第二表面被第二激活光束Ba照射。第一次照射用第一激活光束Bb照射第一表面。第二次照射用第二激活光束Ba照射第二表面。分别进行第一次照射和第二次照射。

2. 发明专利

JP2014050860A Normal temperature junction device and normal temperature junction method 有权
标题翻译：正常温度结点装置和正常温度结点方法
公开(公告)号：JP2014050860A
公开(公告)日：2014-03-20
申请号：JP2012196705
申请日：2012-09-07
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASAHITO , UCHIUMI ATSUSHI , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： B23K20/00 , B23K20/24 , H01L21/02
CPC分类号： H01L21/67121 , B23K20/02 , B23K20/16 , B23K20/24 , B23K2201/36 , B32B37/0046 , B32B37/18 , B32B38/0012 , B32B38/1858 , B32B2307/20 , B32B2310/08 , B32B2311/00 , B32B2457/14 , B81C3/001 , B81C99/0025 , C23C14/3407 , C23C14/3457 , C23C14/3464 , C23C14/50 , C23C14/564 , H01J37/3435 , H01L21/187 , H01L21/2007
摘要： PROBLEM TO BE SOLVED: To suppress to adhere impurities to a substrate or an intermediate layer when carrying out normal temperature junction of the substrate.SOLUTION: The normal temperature junction device comprises: a vacuum vessel 1; a first holding mechanism 3a which holds a first substrate 4; a second holding mechanism 3b which holds a second substrate 4; a beam source 6 which emits active beam to irradiate a bonded surface of the first substrate 4 and the second substrate 4; and a pressure welding mechanism 5 which piles up and joins the bonded surface of both the substrates 4 on which target materials adhere. At least one of the vacuum vessel 1, the first and second holding mechanism 3a and 3b, the beam source 6, and the pressure welding mechanism 5 is formed or covered with a first material which is hard to sputtering due to the active beam 6 or does not harm the function of the device which joins both the substrates 4, even on the bonded surface.
摘要翻译：要解决的问题：当进行基板的常温接合时，抑制将杂质粘附到基板或中间层。解决方案：常温接头装置包括：真空容器1; 保持第一基板4的第一保持机构3a; 保持第二基板4的第二保持机构3b; 发射有源光束以照射第一基板4和第二基板4的接合表面的光束源6; 以及压接机构5，其将目标材料粘附在其上的两个基板4的接合表面堆叠并结合。真空容器1，第一和第二保持机构3a和3b中的至少一个，光束源6和压力焊接机构5由于活性束6或第二材料形成或覆盖难以溅射的第一材料不损害连接在基板4上的装置的功能，即使在接合面上也是如此。

3. 发明专利

JP2014120402A High speed atomic beam source, normal temperature joining device and normal temperature joining method 有权
标题翻译：高速原子束源，正常温度接合装置和正常温度接合方法
公开(公告)号：JP2014120402A
公开(公告)日：2014-06-30
申请号：JP2012276259
申请日：2012-12-18
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUNO TAKESHI , KINOUCHI MASAHITO , GOTO TAKAYUKI , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： H05H3/02 , H01L21/02 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To join a plurality of substrates more properly by activating the surface of the substrate more uniformly.SOLUTION: A high speed atomic beam source includes a housing 20, and an electrode body 21. The housing 20 has a ring shape and includes a plurality of irradiation holes 22 aligned on a surface 20p inside a ring at an equal interval or continuously. The electrode body 21 is provided inside the housing 20, and extends along the circumference of the ring. The housing 20 and the electrode body 21 are respectively constituted as a cathode and an anode which generate a saddle field type electric field inside the housing 20. The surface inside the ring in each of the plurality of irradiation holes 22 is directed to the central axis of the ring.
摘要翻译：要解决的问题：通过更均匀地激活基板的表面，更合适地接合多个基板。解决方案：高速原子束源包括壳体20和电极体21.壳体20具有环形和包括以等间隔或连续地排列在环内的表面20p上的多个照射孔22。电极体21设置在壳体20的内部，并且沿着环的圆周延伸。壳体20和电极体21分别构成为在壳体20内部产生鞍场型电场的阴极和阳极。多个照射孔22中的每一个中的环内的表面指向中心轴的戒指

4. 发明专利

JP2013098186A Normal temperature joint device 审中-公开
标题翻译：正常温度接头装置
公开(公告)号：JP2013098186A
公开(公告)日：2013-05-20
申请号：JP2011236545
申请日：2011-10-27
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： KINOUCHI MASAHITO , GOTO TAKAYUKI , TSUNO TAKESHI , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： H01L21/02 , B23K20/00 , B23K20/24
CPC分类号： H01L21/02 , H01L21/67011 , H01L21/67092 , H01L21/67253 , H01L21/6831
摘要： PROBLEM TO BE SOLVED: To properly joint a plurality of substrates by more evenly activating the surfaces of the substrates.SOLUTION: A normal temperature joint device includes a plurality of first beam sources 17-1 to 17-2 for respectively radiating a plurality of first activation beams for irradiating a first activation surface of a first substrate, a plurality of second beam sources 18-1 to 18-2 for respectively radiating a plurality of second activation beams for irradiating a second activation surface of a second substrate, and a pressure-welding mechanism 15 for jointing the first substrate and the second substrate by bringing the first activation surface and the second activation surface into contact with each other after the first activation surface and the second activation surface are irradiated. Such a normal temperature joint device can irradiate the first activation surface and the second activation surface more evenly than other normal temperature joint devices for irradiating the first activation surface and the second activation surface by using one beam source so that the first activation surface and the second activation surface can more properly be jointed.
摘要翻译：要解决的问题：通过更均匀地激活基板的表面来适当地接合多个基板。解决方案：常温接头装置包括多个第一束源17-1至17-2，用于分别辐射多个第一激活光束，用于照射第一衬底的第一激活表面，多个第二光束源 18-1至18-2，用于分别辐射用于照射第二基板的第二激活表面的多个第二激活光束;以及压接机构15，用于通过使第一激活面和第一激活面接合第一基板和第二基板; 在第一激活面和第二激活面被照射之后，第二激活面彼此接触。这种常温接头装置可以比其他常温接头装置更均匀地照射第一激活表面和第二激活表面，用于通过使用一个光束源照射第一激活表面和第二激活表面，使得第一激活表面和第二激活表面激活面可以更合适地连接起来。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012004585A Joint device and joint system 有权
标题翻译：联合装置和联合系统
公开(公告)号：JP2012004585A
公开(公告)日：2012-01-05
申请号：JP2011174143
申请日：2011-08-09
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUTSUMI KEIICHIRO , TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASAHITO , SUZUKI TAKENORI , IDE KENSUKE
IPC分类号： H01L21/02 , B23K20/00
摘要： PROBLEM TO BE SOLVED: To provide a joint device and a joint system which makes it possible to reduce warpage occurring in a joint substrate.SOLUTION: A joint device 1 comprises: an activation device 16 activating a first substrate surface and a second substrate surface; a first retention mechanism (8, 9) retaining the first substrate when the first substrate surface is activated; a second retention mechanism (13) retaining the second substrate when the second substrate surface is activated; and a pressure-welding mechanism 14 driving the first substrate and the second substrate so as to make the activated first and second substrates be in contact with each other. Making the difference between the thermal conductivity of a first material (11, 8) made contact with the first substrate when the first substrate surface is activated and that of a second material (13) made contact with the second substrate when the second substrate surface is activated within 20 W/m K makes it possible to reduce the temperature difference between the first substrate surface and the second substrate surface caused by activation and to reduce warpage occurring in the joint substrate more than ever before.
摘要翻译：要解决的问题：提供一种能够减少接合基板发生翘曲的接合装置和接头系统。解决方案：接头装置1包括：致动装置16，其致动第一基板表面和第二基板表面; 当所述第一基板表面被激活时保持所述第一基板的第一保持机构（8,9）当所述第二基板表面被激活时保持所述第二基板的第二保持机构（13）以及驱动第一基板和第二基板以使活化的第一和第二基板彼此接触的压焊机构14。当第一基板表面被激活时，使第一材料（11,8）的热导率与第一基板接触，当第二基板表面是第二基板表面是第二基板表面时与第二基板接触的第二材料在20W / m K内激活，可以降低由激活引起的第一基板表面和第二基板表面之间的温度差，并且可以比以往更少地减少接头基板中的翘曲。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2014086400A High speed atom beam source and normal temperature bonding device including the same 审中-公开
标题翻译：高速原子束源和包括其的正常温度结合装置
公开(公告)号：JP2014086400A
公开(公告)日：2014-05-12
申请号：JP2012237049
申请日：2012-10-26
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUTSUMI KEIICHIRO , TSUNO TAKESHI , GOTO TAKAYUKI , KINOUCHI MASAHITO , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： H05H3/02 , B23K20/00 , G21K1/00 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To minimize unnecessary emission of particles.SOLUTION: A high speed atom beam source includes a housing 11 and an electrode body 12. The housing 11 has a box shape, includes a grid 14 on one face thereof, and serves as a cathode. The electrode body 12 is provided at the inside of the housing 11, and serves as an anode generating a saddle field type electric field. In at least one of the housing 11 and the electrode body 12, at least a part is formed of a first material hardly sputtered by ions generated by the electric field, or at least a part of a face capable of being irradiated with ions is covered with a coating layer using the first material.
摘要翻译：要解决的问题：最小化不必要的颗粒发射。解决方案：高速原子束源包括壳体11和电极体12.壳体11具有盒形，在其一个表面上包括栅格14，并且用作一个阴极。电极体12设置在壳体11的内部，并且用作产生鞍场型电场的阳极。在壳体11和电极体12中的至少一个中，至少一部分由不被电场产生的离子溅射的第一材料形成，或者能够被离子照射的面的至少一部分被覆盖使用第一材料的涂层。

7. 发明专利

JP2013051358A Normal temperature joining device and normal temperature joining method 审中-公开
标题翻译：正常温度接合装置和正常温度接合方法
公开(公告)号：JP2013051358A
公开(公告)日：2013-03-14
申请号：JP2011189441
申请日：2011-08-31
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUTSUMI KEIICHIRO , GOTO TAKAYUKI , TSUNO TAKESHI , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： H01L21/02 , B23K20/00 , B23K20/26 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To enable an electrostatic chuck to securely hold a substrate.SOLUTION: In a normal temperature joining device, a jig 41 is fixed to a first substrate 51. An electrostatic chuck 14 holds the jig 14 with electrostatic force and thereby holding the first substrate 51. A joining mechanism 15 causes the first substrate 51 to contact with the second substrate 31 when the jig 41 is held by the electrostatic chuck 14 and thereby joining the first substrate 51 to the second substrate 31. In the case where the jig 41 is formed so as to be held directly by the electrostatic chuck 14 even when it is difficult that the electrostatic chuck 14 directly holds the first substrate 51, the normal temperature joining device allows the electrostatic chuck 14 to hold the first substrate 51 more securely and joins the first substrate 51 to the second substrate 31 more properly.
摘要翻译：要解决的问题：使静电卡盘牢固地保持基板。解决方案：在常温接合装置中，夹具41固定到第一基板51.静电卡盘14用静电力保持夹具14，从而保持第一基板51.接合机构15使第一基板 51，当夹具41被静电吸盘14保持时与第二基板31接触，从而将第一基板51接合到第二基板31.在夹具41形成为被静电保持的情况下卡盘14即使当静电卡盘14难以直接保持第一基板51时，常温接合装置允许静电卡盘14更牢固地保持第一基板51，并且将第一基板51更接近第二基板31 。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2013046033A Normal temperature bonding device and normal temperature bonding method 审中-公开
标题翻译：正常温度接合装置和正常温度接合方法
公开(公告)号：JP2013046033A
公开(公告)日：2013-03-04
申请号：JP2011185084
申请日：2011-08-26
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： TSUNO TAKESHI , KINOUCHI MASAHITO , GOTO TAKAYUKI , IDE KENSUKE , SUZUKI TAKENORI
IPC分类号： H01L21/02 , B23K20/00
摘要： PROBLEM TO BE SOLVED: To make a normal temperature bonding device more compact.SOLUTION: The normal temperature bonding device comprises a plurality of beam sources 17-1 through 17-4, 18-1 through 18-4, and a controller for controlling so that some of the plurality of beam sources 17-1 through 17-4, 18-1 through 18-4 emit particles but the other beam sources do not emit particles. This normal temperature bonding device does not require a large vacuum exhaust device having an exhaust speed that is required when the plurality of beam sources 17-1 through 17-4, 18-1 through 18-4 emit particles all at once. The normal temperature bonding device can be manufactured more compactly by providing a compact vacuum exhaust device having an exhaust speed that is required when only some of the plurality of beam sources emit particles.
摘要翻译：要解决的问题：使常温接合装置更紧凑。解决方案：常温接合装置包括多个光束源17-1至17-4,18-1至18-4，以及控制器，用于控制使得多个光束源17-1至 17-4,18-1至18-4发射颗粒，但其他光束源不发射颗粒。这种常温接合装置不需要具有当多个光束源17-1至17-4,18-1至18-4同时发射颗粒时所需的排气速度的大型真空排气装置。通过提供一种紧凑的真空排气装置，可以更紧凑地制造常温接合装置，该真空排气装置具有仅当多个光束源中的一些发射粒子时所需的排气速度。版权所有（C）2013，JPO＆INPIT

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