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1. 发明专利

JP2003347658A Semiconductor light emitting element and its fabricating process 审中-公开
标题翻译：半导体发光元件及其制造工艺
公开(公告)号：JP2003347658A
公开(公告)日：2003-12-05
申请号：JP2002150891
申请日：2002-05-24
申请人： Mitsubishi Electric Corp , Renesas Semiconductor Engineering Corp , 三菱電機株式会社 , 株式会社ルネサスセミコンダクタエンジニアリング
发明人： KAWATSU YOSHIHEI , NAKAJIMA YOSHIYUKI , YAGI TETSUYA
IPC分类号： H01S5/042 , H01S5/22 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a process for fabricating a ridge type semiconductor laser in which a p-type electrode can be formed accurately on the upper surface of a ridge structure.
SOLUTION: The process for fabricating a ridge type semiconductor laser comprises a step for forming a structure of a plurality of semiconductor layers including an active layer on a substrate, a step for forming a first electrode having a width narrower than that of the multilayer structure on the surface thereof, and a step for forming a ridge structure by etching the multilayer structure using the first electrode as a mask.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种可以在脊结构的上表面上精确地形成p型电极的脊型半导体激光器的制造工艺。解决方案：用于制造脊型半导体激光器的方法包括用于形成包括在基板上的有源层的多个半导体层的结构的步骤，形成宽度比第二电极宽度窄的第一电极的步骤在其表面上具有多层结构，以及通过使用第一电极作为掩模蚀刻多层结构来形成脊结构的步骤。版权所有（C）2004，JPO

2. 发明专利

JP2014003256A METHOD FOR MANUFACTURING SiC EPITAXIAL SUBSTRATE 有权
标题翻译：制造SiC外延基体的方法
公开(公告)号：JP2014003256A
公开(公告)日：2014-01-09
申请号：JP2012139424
申请日：2012-06-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAMANO KENICHI , ONO AKIHITO , OCHI JUNJI , KAWATSU YOSHIHEI , TOMITA NOBUYUKI , MITANI YOICHIRO , NAKAMURA TAKUYO
IPC分类号： H01L21/20 , H01L21/02 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an SiC epitaxial substrate having excellent yield.SOLUTION: A method for manufacturing an SiC epitaxial substrate comprises the steps of: (a) preparing an Si substrate and a production SiC substrate; (b) inspecting an amount of foreign matters in an epitaxial growth device by the Si substrate; and (c) performing epitaxial growth on the production SiC substrate using the epitaxial growth device when the amount of foreign matters inspected in the step (b) is less than a prescribed amount.
摘要翻译：要解决的问题：提供一种制造具有优异产率的SiC外延衬底的方法。解决方案：一种用于制造SiC外延衬底的方法，包括以下步骤：（a）制备Si衬底和生产SiC衬底; （b）通过硅衬底检查外延生长装置中的异物量; 和（c）当在步骤（b）中检查的异物量小于规定量时，使用外延生长装置在生产SiC衬底上进行外延生长。

3. 发明专利

JP2003046198A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2003046198A
公开(公告)日：2003-02-14
申请号：JP2002065528
申请日：2002-03-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KAWATSU YOSHIHEI , YAGI TETSUYA
IPC分类号： H01L21/308 , H01S5/223 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To accurately stop etching in a hetero-junction boundary when selectively etching in a hetero-junction structure.
SOLUTION: An Al
y Ga
1-y As layer (0≤y≤1, y x Ga
1-x As layer 10 (0 x Ga
1-x As layer 10, is arranged on the Al
x Ga
1-x As layer 10. In such a hetero-junction structure, when selectively etching the Al
x Ga
1-x As layer, an Au electrode film 16 is formed on the surface of the Al
x Ga
1-x As layer outside an etching area 14, and a resist pattern 18 covering the Au electrode film 16 and exposing the etching area 14 is formed. The resist pattern 18 is used as a mask and etching liquid with a higher Fermi level than the Al
x Ga
1-x As layer is also used to selectively remove the Al
x Ga
1-x As layer under optical irradiation.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：当在异质结结构中选择性蚀刻时，准确地停止异质结边界的蚀刻。解决方案：具有比Al x Ga 1-x As层10（0

4. 发明专利

JP2014189422A SINGLE CRYSTAL 4H-SiC SUBSTRATE AND PRODUCTION METHOD THEREOF 有权
标题翻译：单晶4H-SiC基板及其制造方法
公开(公告)号：JP2014189422A
公开(公告)日：2014-10-06
申请号：JP2013064365
申请日：2013-03-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ONO AKIHITO , KAWATSU YOSHIHEI , TOMITA NOBUYUKI , TANAKA TAKANORI , MITANI YOICHIRO , HAMANO KENICHI
IPC分类号： C30B29/36 , C23C16/42 , C30B25/20 , H01L21/205
CPC分类号： C30B25/20 , C30B29/36 , C30B29/68 , Y10T428/24331 , Y10T428/24612
摘要： PROBLEM TO BE SOLVED: To provide a single crystal 4H-SiC substrate and a production method thereof capable of reducing crystal defects.SOLUTION: A 4H-SiC bulk single crystal substrate 1 having flatness is prepared. A single crystal 4H-SiC layer 3 having a recessed part 2 is epitaxially grown on the 4H-SiC bulk single crystal substrate 1. When the film thickness of the single crystal 4H-SiC layer 3 is expressed as X[μm], the diameter Y[μm] of the recessed part 2 is 0.2×X[μm] or more and 2×X[μm] or less, and the depth Z[nm] of the recessed part 2 is 0.95×X[μm]+0.5[nm] or more and 10×X[μm] or less.
摘要翻译：要解决的问题：提供一种能够降低晶体缺陷的单晶4H-SiC衬底及其制造方法。解决方案：制备具有平坦度的4H-SiC体单晶衬底1。在4H-SiC体单片基板1上外延生长具有凹部2的单晶4H-SiC层3.当将单晶4H-SiC层3的膜厚表示为X [μm]时，直径凹部2的Y [μm]为0.2×X [μm]以上且2×X [μm]以下，凹部2的深度Z [nm]为0.95×X [μm] nm]以上且10×X [μm]以下。

5. 发明专利

JP2013093489A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2013093489A
公开(公告)日：2013-05-16
申请号：JP2011235691
申请日：2011-10-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HATANAKA SHO , KAWATSU YOSHIHEI , KAWAHARA HIROYUKI , NAGIRA TAKASHI
IPC分类号： H01L21/205 , C23C16/02 , C23C16/44 , H01L21/331 , H01L21/338 , H01L21/8222 , H01L21/8248 , H01L27/06 , H01L27/095 , H01L29/737 , H01L29/778 , H01L29/812
CPC分类号： H01L21/02463 , H01L21/02546 , H01L21/0262 , H01L21/02658 , H01L21/8252
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can reduce an impurity originally adhered to a substrate and an impurity in a growth furnace.SOLUTION: A semiconductor device manufacturing method of an embodiment comprises: a carrying-in step of carrying a substrate in a growth furnace; an absorption layer formation step of forming on the substrate and on an inner wall of the growth furnace, impurity absorption layers absorbing impurities on a surface of the substrate and in the growth furnace, respectively; an etching step of making the substrate thin by etching the impurity absorption layer and a part of the substrate; a buffer layer formation step of forming a buffer layer on the thinned substrate; and a semiconductor layer formation step of forming a semiconductor layer on the buffer layer.
摘要翻译：要解决的问题：提供一种半导体器件制造方法，其可以减少原始粘附到基底上的杂质和生长炉中的杂质。解决方案：一个实施例的半导体器件制造方法包括：在生长炉中承载衬底的承载步骤; 吸收层形成步骤，分别在所述基板和所述生长炉的内壁上形成分别吸收所述基板的表面和所述生长炉内的杂质的杂质吸收层; 通过蚀刻杂质吸收层和基板的一部分来使基板变薄的蚀刻步骤; 缓冲层形成步骤，在所述减薄基板上形成缓冲层; 以及在缓冲层上形成半导体层的半导体层形成步骤。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012062552A Exhaust system 审中-公开
标题翻译：排气系统
公开(公告)号：JP2012062552A
公开(公告)日：2012-03-29
申请号：JP2010209611
申请日：2010-09-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANAMAKI YOSHIHIKO , ONO KENICHI , KAWATSU YOSHIHEI , HATANAKA SHO
IPC分类号： C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an exhaust system that can suppress fine particles from being deposited on an inner wall of an exhaust pipe.SOLUTION: The exhaust system 10 includes an introduction port 12a of an exhaust gas and an exhaust pipe 12 having an exhaust port 12b. The system further includes an ultrasonic wave generating device 16 connected to the exhaust pipe, which supplies an ultrasonic wave in the exhaust pipe so as to form a standing wave in the exhaust pipe and which changes a frequency of the ultrasonic wave.
摘要翻译：要解决的问题：提供可以抑制细小颗粒沉积在排气管的内壁上的排气系统。解决方案：排气系统10包括排气的引入口12a和具有排气口12b的排气管12。该系统还包括连接到排气管的超声波发生装置16，其在排气管中提供超声波，以在排气管中形成驻波并改变超声波的频率。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2005005649A Method for manufacturing gan based semiconductor optical device 审中-公开
标题翻译：制造基于GAN的半导体光学器件的方法
公开(公告)号：JP2005005649A
公开(公告)日：2005-01-06
申请号：JP2003170498
申请日：2003-06-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMURA SHINICHI , KAWATSU YOSHIHEI
IPC分类号： H01L21/301 , H01S5/02
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a GaN based semiconductor optical device, in which when an optical end surface of an optical element having a GaN based semiconductor layer is formed, a cleavage plane can be formed at a high production yield, and a mass-production is excellent. SOLUTION: The method for manufacturing the GaN based semiconductor optical device contains an element forming step of epitaxial-growing a semiconductor layer 20 composed of a GaN based semiconductor on a sapphire substrate 10 to form a plurality of optical elements 30 distinctively; a scribing step of forming a scribing line 33 in the semiconductor layer 20; and a cleavage step of dividing the sapphire substrate 10 and the semiconductor layer 20 along a direction of the scribing line by applying an external force to form the cleavage plane on an optical end surface 30a of each optical element 30. In the scribing step, the scribing line 33 is formed in a region other than the optical end surface of the optical element 30, and also a scribing sectional shape along the direction of the scribing line is rounded off at the end. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造GaN基半导体光学器件的方法，其中当形成具有GaN基半导体层的光学元件的光学端面时，可以以高的像素形成解理面产量大，批量生产优良。解决方案：用于制造GaN基半导体光学器件的方法包括在蓝宝石衬底10上外延生长由GaN基半导体构成的半导体层20以形成多个光学元件30的元件形成步骤; 在半导体层20中形成刻划线33的划线工序; 以及通过施加外力在蓝宝石衬底10和半导体层20的划线的方向上分割蓝宝石衬底10和半导体层20以在每个光学元件30的光学端面30a上形成解理面的切割步骤。在划线步骤中，划片线33形成在除了光学元件30的光学端面之外的区域中，并且沿着划线的方向的划线截面形状在端部被倒圆。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2013077744A Semiconductor laser and manufacturing method of the same 有权
标题翻译：其半导体激光器及其制造方法
公开(公告)号：JP2013077744A
公开(公告)日：2013-04-25
申请号：JP2011217475
申请日：2011-09-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMADA NAOYUKI , TADA HITOSHI , KAWATSU YOSHIHEI , ONO KENICHI , MARUYAMA TAKUTO
IPC分类号： H01S5/125 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser having a stable oscillation wavelength and a high output by forming a distributed Bragg reflection region in high accuracy in a distributed Bragg reflection (DBR) semiconductor laser having an AlGaInP-based clad layer and an AlGaAs-based active layer.SOLUTION: A semiconductor laser includes an AlGaAs-based diffraction grating layer in an AlGaInP-based clad layer. The diffraction grating layer in a distributed Bragg reflection region is formed to have unevenness so that the diffraction grating layer remains in a thickness direction, and an uneven part is buried by a thin AlGaAs-based diffraction grating buried layer.
摘要翻译：要解决的问题：通过在具有AlGaInP基覆层的分布式布拉格反射（DBR）半导体激光器中以高精度形成分布式布拉格反射区域，提供具有稳定的振荡波长和高输出的半导体激光器，基于AlGaAs的活性层。解决方案：半导体激光器包括AlGaInP基覆层中的基于AlGaAs的衍射光栅层。分布式布拉格反射区域中的衍射光栅层形成为具有不均匀性，使得衍射光栅层保持在厚度方向，并且通过薄的AlGaAs系衍射光栅掩埋层掩埋不平坦部分。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2010016281A Method for manufacturing semiconductor laser 审中-公开
标题翻译：制造半导体激光的方法
公开(公告)号：JP2010016281A
公开(公告)日：2010-01-21
申请号：JP2008176771
申请日：2008-07-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TADA HITOSHI , YAMAGUCHI TSUTOMU , KAWATSU YOSHIHEI , OKURA YUJI
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/2081 , H01S5/209 , H01S5/2214 , H01S5/2224
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser which can secure high reliability and has high efficiency.
SOLUTION: An n-type clad layer 12 (a first conductivity type semiconductor layer), an active layer 14, a p-type clad layer 16 (a second conductivity type semiconductor layer) are stacked in this order on a GaAs substrate 10 (semiconductor substrate). A ridge 20 is formed on the p-type clad layer 16. A SiN film 22 (a first insulating film) is formed on the p-type clad layer 16 at a film forming temperature of about 600°C by a thermal CVD method. A SiN film 24 (a second insulating film) is formed on the SiN film 22 at a film forming temperature of about 300°C by a plasma CVD method. An electrode 26 is formed on the SiN film 24.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以确保高可靠性并且具有高效率的半导体激光器的制造方法。解决方案：在GaAs衬底上依次层叠n型覆盖层12（第一导电型半导体层），有源层14，p型覆盖层16（第二导电型半导体层） 10（半导体衬底）。在p型覆盖层16上形成有脊20.通过热CVD法，在p型覆盖层16上，在成膜温度约600℃下，形成SiN膜22（第一绝缘膜）。在SiN膜22上通过等离子体CVD法在成膜温度约300℃下形成SiN膜24（第二绝缘膜）。电极26形成在SiN膜24上。（C）2010，JPO＆INPIT

10. 发明专利

JP2005347534A Method for manufacturing nitride semiconductor device 有权
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：JP2005347534A
公开(公告)日：2005-12-15
申请号：JP2004165718
申请日：2004-06-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIOZAWA KATSUOMI , OISHI TOSHIYUKI , KAWASAKI KAZUE , KAWATSU YOSHIHEI , ABE YUJI
IPC分类号： H01L21/28 , H01L21/285 , H01L21/306 , H01L29/41 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L21/28575 , H01L21/30621 , H01L33/0075 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To obtain a nitride semiconductor device which has contact resistance of an n-type electrode of low value not acquired by dry etching using only chlorine gas, even if thermal treatment of at least 400°C is not performed. SOLUTION: The nitride semiconductor device is manufactured by using a process for forming a nitride semiconductor layer on the main surface of a GaN substrate, a process for polishing a back of the GaN substrate on which the nitride semiconductor layer was formed, a process wherein dry etching of the polished back of the GaN substrate is performed by using mixed gas of chlorine and oxygen, and a process for forming the n-type electrode on the back of the GaN substrate in which dry etching was performed. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使不进行至少400℃的热处理，得到仅使用氯气也不能通过干法蚀刻而获得的具有低值的n型电极的接触电阻的氮化物半导体器件。解决方案：通过使用在GaN衬底的主表面上形成氮化物半导体层的工艺，对其上形成有氮化物半导体层的GaN衬底的背面进行抛光的工艺来制造氮化物半导体器件，其中通过使用氯和氧的混合气体来进行GaN衬底的抛光背面的干蚀刻，以及在进行干蚀刻的GaN衬底背面上形成n型电极的工艺。版权所有（C）2006，JPO＆NCIPI

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