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1. 发明专利

JP2013077744A Semiconductor laser and manufacturing method of the same 有权
标题翻译：其半导体激光器及其制造方法
公开(公告)号：JP2013077744A
公开(公告)日：2013-04-25
申请号：JP2011217475
申请日：2011-09-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMADA NAOYUKI , TADA HITOSHI , KAWATSU YOSHIHEI , ONO KENICHI , MARUYAMA TAKUTO
IPC分类号： H01S5/125 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser having a stable oscillation wavelength and a high output by forming a distributed Bragg reflection region in high accuracy in a distributed Bragg reflection (DBR) semiconductor laser having an AlGaInP-based clad layer and an AlGaAs-based active layer.SOLUTION: A semiconductor laser includes an AlGaAs-based diffraction grating layer in an AlGaInP-based clad layer. The diffraction grating layer in a distributed Bragg reflection region is formed to have unevenness so that the diffraction grating layer remains in a thickness direction, and an uneven part is buried by a thin AlGaAs-based diffraction grating buried layer.
摘要翻译：要解决的问题：通过在具有AlGaInP基覆层的分布式布拉格反射（DBR）半导体激光器中以高精度形成分布式布拉格反射区域，提供具有稳定的振荡波长和高输出的半导体激光器，基于AlGaAs的活性层。解决方案：半导体激光器包括AlGaInP基覆层中的基于AlGaAs的衍射光栅层。分布式布拉格反射区域中的衍射光栅层形成为具有不均匀性，使得衍射光栅层保持在厚度方向，并且通过薄的AlGaAs系衍射光栅掩埋层掩埋不平坦部分。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011023493A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2011023493A
公开(公告)日：2011-02-03
申请号：JP2009166346
申请日：2009-07-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMADA NAOYUKI , YOSHIKAWA MAKOTO
IPC分类号： H01S5/343 , H01S5/16
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor laser which hardly causes COD, and which has a high output beam stability. SOLUTION: A horizontal resonator type semiconductor laser with an oscillation wavelength less than 650 nm, has the following configuration. An n-type clad layer 12, an optical waveguide layer, and a p-type clad layer 20 are sequentially formed on an n-type GaAs substrate 10 as a semiconductor lamination structure. The optical waveguide layer has a quantum well active layer 16 including a well layer 28 and a barrier layer 30. A window structure 32 in which the constituent element of each layer of the semiconductor lamination structure is mutually diffused is formed in the vicinity of an end surface. Each layer of the optical waveguide layer other than the well layer 28 consists of (Al x Ga 1-x )InP of 0.66 COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：获得几乎不引起COD并具有高输出光束稳定性的半导体激光器。解决方案：振荡波长小于650nm的水平谐振器型半导体激光器具有以下结构。在n型GaAs衬底10上依次形成n型覆盖层12，光波导层和p型覆盖层20作为半导体层叠结构。光波导层具有包括阱层28和势垒层30的量子阱活性层16.在半导体层叠结构的各层的构成元素相互扩散的窗结构体32的端部附近形成表面。除了阱层28以外的光波导层的每个层由0.66

3. 发明专利

JP2006013038A Semiconductor laser array device 审中-公开
标题翻译：半导体激光阵列器件
公开(公告)号：JP2006013038A
公开(公告)日：2006-01-12
申请号：JP2004186265
申请日：2004-06-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMADA NAOYUKI , SHIGIHARA KIMIO , KAWASAKI KAZUE , SHIBATA KIMITAKA , YAGI TETSUYA , ONO KENICHI , HANEDA HIDEKI
IPC分类号： H01S5/022 , H01S3/04 , H01S5/00 , H01S5/024 , H01S5/40
CPC分类号： H01S5/024 , H01S5/4031
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser array device having an excellent yield on a manufacture and increasing an output by improving the efficiency of a heat dissipation.
SOLUTION: The semiconductor laser array device is composed of a plurality of semiconductor laser chips 1 arrayed at specified pitches, and a sub-mount 3 for loading each semiconductor laser chip 1. The device is further composed of a heatsink 4 for dissipating the heat generation of each semiconductor laser chip 1 through the sub-mount 3. The inequality 2×T≤S≤10×T is satisfied by using a distance S among the centers of the chips and the thickness T of the sub-mount.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在制造上具有优异成品率并通过提高散热效率来提高输出的半导体激光器阵列器件。解决方案：半导体激光器阵列器件由以规定间距排列的多个半导体激光器芯片1和用于加载每个半导体激光器芯片1的子安装件3组成。该器件还包括散热片4 每个半导体激光器芯片1通过副底座3的发热。通过使用芯片的中心和子座的厚度T之间的距离S来满足不等式2×T≤S≤10×T。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2006128236A Optical semiconductor module 审中-公开
标题翻译：光学半导体模块
公开(公告)号：JP2006128236A
公开(公告)日：2006-05-18
申请号：JP2004311798
申请日：2004-10-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIMADA NAOYUKI , YAGI TETSUYA
IPC分类号： H01S5/022
CPC分类号： H01S5/4025 , H01L2224/48091 , H01L2224/48465 , H01L2224/49111 , H01S5/02276 , H01S5/024 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an LD array in which the other LDs in the same array can oscillate even when one single LD causes short circuiting and which can compensate the lost portion of the optical output from the short-circuiting LD by increasing the currents flowing to the other LDs, by automatically making the current flowing to the defective LD until the short circuiting occurs to flow to the other LDs in a dispersed state when the array is driven with a constant current.
SOLUTION: The LD array is provided with one or a plurality of semiconductor chips 31A-31D respectively containing one or a plurality of laser diodes 3A-3G, a sub-mount 2 or heat sink to which one or the plurality of semiconductor chips 31A-31D are attached, and bonding wires 7 through which operating currents are supplied to the semiconductor chips 31A-31D. The material, diameter, and shape of each bonding wire 7 are decided so that the wire 7 may be fused when a prescribed overcurrent higher than the operating current of each laser diode 3A-3G flows.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种LD阵列，其中同一阵列中的其它LD可以振荡，即使当单个LD引起短路并且可以通过以下方式补偿来自短路LD的光输出的丢失部分通过自动使电流流向有缺陷的LD，直到发生短路而以恒定电流驱动阵列时以分散状态流向其它LDs，增加流向其它LD的电流。解决方案：LD阵列设置有分别包含一个或多个激光二极管3A-3G，子座2或散热器的一个或多个半导体芯片31A-31D，一个或多个半导体芯片31A-31D以及将半导体芯片31A-31D供给工作电流的接合线7。决定每个接合线7的材料，直径和形状，使得当高于每个激光二极管3A-3G的工作电流的规定过电流流动时，导线7可以熔合。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006245341A Semiconductor optical element 审中-公开
标题翻译：半导体光学元件
公开(公告)号：JP2006245341A
公开(公告)日：2006-09-14
申请号：JP2005059595
申请日：2005-03-03
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HANAMAKI YOSHIHIKO , ONO KENICHI , SHIGIHARA KIMIO , KAWASAKI KAZUE , SHIBATA KIMITAKA , SHIMADA NAOYUKI
IPC分类号： H01S5/343 , H01S5/22
CPC分类号： H01S5/22 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor optical element in which an output is improved and the reliability of operation can be improved by preventing the mixture of impurities into an active layer.
SOLUTION: The semiconductor optical element has a structure in which an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (also including no As composition) guiding layer having no added impurities, an InGaAsP (also including no In composition) active layer, a second InGaAsP (also including no As composition) guiding layer having no added impurities, a p-type AlGaInP cladding layer, a p-type discontinuity mitigation layer and a p-type GaAs contact layer are successively laminated on an n-type GaAs substrate. C or Mg is used as p-type impurities for the p-type GaAs contact layer, the p-type discontinuity mitigation layer and the p-type AlGaInP cladding layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得提高输出的半导体光学元件，并且可以通过防止杂质混入活性层来提高操作的可靠性。解决方案：半导体光学元件具有其中没有添加杂质的n型GaAs缓冲层，n型AlGaInP包层，第一InGaAsP（也不包括As组成）引导层的InGaAsP（还包括无In组分）的有源层，不含添加杂质的第二InGaAsP（也不包括As组成）引导层，p型AlGaInP包层，p型不连续性缓解层和p型GaAs接触层，依次层压在n型GaAs衬底上。 C或Mg用作p型GaAs接触层，p型不连续性缓解层和p型AlGaInP包层的p型杂质。版权所有（C）2006，JPO＆NCIPI

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