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1. 发明专利

JP2013038843A Gate drive device 有权
标题翻译：门驱动装置
公开(公告)号：JP2013038843A
公开(公告)日：2013-02-21
申请号：JP2011170796
申请日：2011-08-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社 , Tokyo Institute Of Technology , 国立大学法人東京工業大学
发明人： HORIGUCHI GOJI , NAKATAKE HIROSHI , AKAGI YASUBUMI , FUJITA HIDEAKI , IWATA YASUAKI , URUSHIBATA HIROAKI , TOMINAGA SHINJI
IPC分类号： H02M1/08
摘要： PROBLEM TO BE SOLVED: To provide a gate drive device that can implement switching control with satisfactory loss and noise characteristics even when operating conditions change.SOLUTION: The gate drive device includes: a constant current drive circuit 11C; a constant voltage drive circuit 11V; a circuit characteristic information holding section 15 for holding information on either or both of a switching loss and a radiation noise caused when each of the constant current drive circuit 11C and the constant voltage drive circuit 11V drives a switching element 2 with respect to a parameterized operating condition of the switching element 2; an operating condition detection section 14 for detecting the operating condition of the switching element 2; and a drive circuit switching sections 12, 13 for selecting either of the constant current drive circuit 11C and the constant voltage drive circuit 11V to drive the switching element 2 on the basis of the detected operating condition and the circuit characteristic information held by the circuit characteristic information holding section 15.
摘要翻译：要解决的问题：提供即使在操作条件改变时也能够实现具有令人满意的损耗和噪声特性的开关控制的栅极驱动装置。栅极驱动装置包括：恒流驱动电路11C; 恒压驱动电路11V; 一个电路特性信息保持部分15，用于保持当恒定电流驱动电路11C和恒定电压驱动电路11V相对于参数化的操作驱动开关元件2时引起的开关损耗和辐射噪声中的一个或两个的信息开关元件2的状态; 用于检测开关元件2的工作状态的工作条件检测部分14; 以及用于选择恒流驱动电路11C和恒压驱动电路11V中的任一个的驱动电路开关部12,13，以根据检测到的工作条件和由电路特性保持的电路特性信息来驱动开关元件2 信息保存部分15.版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2005295661A Driving circuit for power semiconductor element and power converter 审中-公开
标题翻译：功率半导体元件和功率转换器的驱动电路
公开(公告)号：JP2005295661A
公开(公告)日：2005-10-20
申请号：JP2004105674
申请日：2004-03-31
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HORIGUCHI GOJI , NAKATAKE HIROSHI , OI TAKESHI
IPC分类号： H02M1/08
摘要： PROBLEM TO BE SOLVED: To obtain a driving circuit for a power semiconductor for that can easily correct the slippage of switching timing even in the case that a plurality of power semiconductor elements are connected in parallel. SOLUTION: The driving circuit for a power semiconductor element for power is composed of a power semiconductor element 26, a current detecting means 28 which detects a current flowing in the power semiconductor element, a drive command generating means 20 which outputs a drive command to a gate terminal, a current detection period setting means 29 which outputs a current detection period setting signal based on an output signal from the drive command generating means 20, timing connection necessity determination means 2 and 4 each of which determines the necessity of the correction of the timing of turn-off or turn-on operation based on a plurality of output signals taken from the current detecting means 28 at different timings by the current detection period setting signals, latching means 10 and 17 which retain the output of the timing correction necessity determination means 2 and 4, delay time deciding means 11 and 18 each of which decides the amount of the correction of the timing of turn-off or turn-on operation based on the retention signal, and delay time generating means 12 and 19 which output signals generated based upon the delay time selected by the delay time deciding means 11 and 18 to the gate terminal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使在多个功率半导体元件并联连接的情况下，也可以获得用于功率半导体的驱动电路，其可以容易地校正开关定时的滑动。解决方案：用于功率的功率半导体元件的驱动电路由功率半导体元件26，检测在功率半导体元件中流动的电流的电流检测装置28，驱动指令发生装置20，其输出驱动命令到门终端，电流检测周期设定装置29，其基于来自驱动指令发生装置20的输出信号输出电流检测周期设置信号，定时连接必要性确定装置2和4，每个定时连接必要性确定装置2和4确定必要性基于从当前检测装置28以不同的定时取得的多个输出信号通过当前检测周期设置信号来校正关断或开启操作的定时，保持定时的输出的锁存装置10和17 校正必要性确定装置2和4，每个都确定tim的校正量的延迟时间确定装置11和18 以及基于保持信号的关断或导通操作的延迟时间产生装置12和19，其将根据由延迟时间确定装置11和18选择的延迟时间产生的信号输出到门终端。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2011036095A Power converter and protection method of power converter 有权
标题翻译：电力转换器的功率转换器和保护方法
公开(公告)号：JP2011036095A
公开(公告)日：2011-02-17
申请号：JP2009182351
申请日：2009-08-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HORIGUCHI GOJI
IPC分类号： H02M1/00 , H02H7/122 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To provide a power converter and a protection method of the power converter, which is increased in reliability while retaining high characteristics.
SOLUTION: The power converter includes a power semiconductor module 101 using a power semiconductor element Tr, a reference temperature measurement part 3 for measuring the temperature T
0 of a reference point, a semiconductor element temperature calculation part 2 for calculating the temperature T
j of the power semiconductor element Tr using a predetermined transfer function, and a drive control part 4 for driving and controlling the power semiconductor module 101 based on calculated temperature T
j of the power semiconductor element. The semiconductor element temperature calculation part 2 calculates a temperature difference ΔT
k between the reference point and the power semiconductor element Tr, based on a power loss P generated in the semiconductor element Tr, in each of a plurality of first order lag transfer functions (r
k /(1+sτ
k )) having different thermal time constants τ, and calculates the temperature T
j of the power semiconductor element Tr, based on a sum ΣΔT
k of each calculated temperature difference and the temperature T
0 of the reference point.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供功率转换器的功率转换器和保护方法，其在保持高特性的同时提高了可靠性。解决方案：功率转换器包括使用功率半导体元件Tr的功率半导体模块101，用于测量参考点的温度T 0 的参考温度测量部件3，半导体元件温度计算用于使用预定的传递函数计算功率半导体元件Tr的温度T j 的部分2，以及用于基于计算温度T 驱动和控制功率半导体模块101的驱动控制部分4， j 。半导体元件温度计算部2基于在半导体元件Tr中产生的功率损耗P，计算出基准点与功率半导体元件Tr之间的温差ΔT k 具有不同的热时间常数τ的第一阶滞后传递函数（r k /（1 +sτ k ）），并计算温度T 基于每个计算出的温度差和参考点的温度T 0 的和ΣΔT k 的功率半导体元件Tr。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2004165430A Power semiconductor module 有权
公开(公告)号：JP2004165430A
公开(公告)日：2004-06-10
申请号：JP2002329558
申请日：2002-11-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KIMOTO NOBUYOSHI , KIMURA SUSUMU , HORIGUCHI GOJI
IPC分类号： H01L25/07 , H01L23/58 , H01L25/18
CPC分类号： H01L2224/49111 , H01L2924/30107 , H01L2924/3011 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor module equipped with a shunt resistor with high detection accuracy.
SOLUTION: In a power semiconductor device including a shunt resistor therein, the shunt resistor is a gateway type one including a plate shaped shunt resistance member (51) and a metal plate (52) provided on the opposite sides thereof. When voltage detecting terminals (Ta, Tb) are provided at one end of the metal plate (52), a slit (53) is formed perpendicularly to a current direction such that the opposite terminals (Ta, Tb) are separated from the shunt resistance member (51).
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2015053749A 電力用半導体素子の駆動回路有权
标题翻译：功率半导体元件驱动电路
公开(公告)号：JP2015053749A
公开(公告)日：2015-03-19
申请号：JP2013183887
申请日：2013-09-05
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： HORIGUCHI GOJI , NAKAYAMA YASUSHI
IPC分类号： H02H7/20 , H02M1/08
摘要：【課題】低コストで、電力用半導体素子の短絡状態を迅速に検出することができる電力用半導体素子の駆動回路を提供する。【解決手段】電荷量検出部4は、制御指令部11がターンオン指令を出力してから電力用半導体素子1のゲートに供給される電荷量を検出する。ゲート電圧検出部7は、電力用半導体素子1のゲート電圧を検出する。第1の比較器6は、電荷量検出部4で検出された電荷量と、第1の基準値とを比較する。第2の比較器9は、ゲート電圧検出部7で検出されたゲート電圧と、第2の基準値とを比較する。第1の短絡判定部10は、第1の比較器6の比較結果と第2の比較器9の比較結果に基づいて、電力用半導体素子1が短絡状態か否かを判定する。【選択図】図1
摘要翻译：要解决的问题：提供能够以低成本快速检测功率半导体元件的短路状态的功率半导体元件的驱动电路。解决方案：充电量检测单元4检测所提供的电荷量在从控制指令单元11输出接通命令之后到功率半导体元件1的栅极。栅极电压检测单元7检测功率半导体元件1的栅极电压。第一比较器6将由充电量检测单元4检测到的具有第一参考值的电荷。第二比较器9将由栅极电压检测单元7检测的栅极电压与第二参考值进行比较。第一短路判定单元10基于第一比较器6的比较结果和第二比较器9的比较结果，判定功率半导体元件1是否处于短路状态。

6. 发明专利

JP2011024368A Drive circuit and driving method of power semiconductor 有权
标题翻译：功率半导体驱动电路及驱动方法
公开(公告)号：JP2011024368A
公开(公告)日：2011-02-03
申请号：JP2009168833
申请日：2009-07-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKATAKE HIROSHI , KINOUCHI SHINICHI , HORIGUCHI GOJI
IPC分类号： H02M1/08 , H02M7/5387 , H03K17/04 , H03K17/56
摘要： PROBLEM TO BE SOLVED: To interrupt even a power semiconductor element having a low gate threshold voltage surely at high speed by a simple configuration not using a power supply of negative voltage for turning a power semiconductor off. SOLUTION: In the drive circuit of a power semiconductor having a main terminal, a control reference terminal and a control terminal and configured to control the current flowing between the main terminal and the control reference terminal by controlling the charges stored between the control terminal and the control reference terminal, a power supply having a power supply terminal and a ground terminal is provided, a charging control circuit is provided between the power supply terminal and the control terminal, a charging switch is provided between the control reference terminal and the ground terminal, a discharging control circuit is provided between the power supply terminal and the control reference terminal, and a discharging switch is provided between the control terminal and the ground terminal. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过简单的配置，即使是不使用用于使功率半导体断开的负电压的电源的简单配置，也可以高速中断甚至具有低栅极阈值电压的功率半导体元件。解决方案：在具有主端子的功率半导体的驱动电路中，控制基准端子和控制端子被配置为通过控制存储在控制器之间的电荷来控制在主端子和控制基准端子之间流动的电流端子和控制基准端子，设置有具有电源端子和接地端子的电源，在电源端子和控制端子之间设置充电控制电路，在控制基准端子与控制基准端子之间设置充电开关接地端子，在电源端子和控制基准端子之间设置放电控制电路，并且在控制端子和接地端子之间设置放电开关。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2004048949A Semiconductor device 审中-公开
公开(公告)号：JP2004048949A
公开(公告)日：2004-02-12
申请号：JP2002205182
申请日：2002-07-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HORIGUCHI GOJI , NAKATAKE HIROSHI , IWATA AKIHIKO
IPC分类号： H01L21/822 , H01L27/04 , H02M1/00 , H02M1/08
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for appropriately adjusting the time lag in switching timing between self arc-extinguishing type semiconductor elements connected in parallel.
SOLUTION: Each of a plurality of semiconductor elements is provided with a plurality of self arc-extinguishing type semiconductor elements 2a and 2b connected in parallel; and also a timing correction requirement discriminating means 6 which comprises a common control signal generating circuit 1 that generates a drive control signal for each of the self arc-extinguishing type semiconductor elements and judges whether the collector current of the semiconductor element has exceeded a prescribed current state judging reference value or not; a sampling time adjusting circuit 7 for controlling taking-in of the output signal from the timing correction requirement discriminating means 6 according to the drive control signal of the control signal generating circuit 1; an output signal holding circuit 8 which holds the output signal from the circuit 7; and a switching time adjusting circuit 9 which performs a prescribed calculation based on the output signal of the circuit 8 and the drive control signal of the control signal generation circuit 1, for adjusting switching timing for every above-mentioned semiconductor element.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2008178248A Drive circuit for power semiconductor element, and power conversion device 有权
标题翻译：功率半导体元件的驱动电路和电源转换器件
公开(公告)号：JP2008178248A
公开(公告)日：2008-07-31
申请号：JP2007010305
申请日：2007-01-19
申请人： Mitsubishi Electric Corp , Toshiba Mitsubishi-Electric Industrial System Corp , 三菱電機株式会社 , 東芝三菱電機産業システム株式会社
发明人： HORIGUCHI GOJI , OI TAKESHI , TSUCHIYA TAICHIRO , YAMAGUCHI HIROAKI
IPC分类号： H02M1/08
CPC分类号： Y02B70/1483
摘要： PROBLEM TO BE SOLVED: To obtain a driving circuit for power semiconductor element for correcting the imbalance of an output current, even if variations occur in the gate threshold voltage of the power semiconductor element to be connected in parallel, by correcting imbalance of an output current of a power converter having a structure, in which the power semiconductor element that has different gate threshold voltage are connected in parallel.
SOLUTION: The drive circuit is provided with a displacement means for making quantitatively displacing both the voltage of a drive control power supply 3 for driving the semiconductor element 1 displace quantitatively in homopolar manner, and the potential of an emitter potential generating power supply 4, in response to the difference between the gate threshold voltage and a gate threshold voltage reference value; and a constant-current drive circuit 7a as a means for driving the semiconductor element.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得用于校正输出电流的不平衡的功率半导体元件的驱动电路，即使并联连接的功率半导体元件的栅极阈值电压发生变化，通过校正不平衡具有其中具有不同栅极阈值电压的功率半导体元件并联连接的结构的功率转换器的输出电流。解决方案：驱动电路设置有位移装置，用于定量地移位用于驱动半导体元件1的驱动控制电源3的电压以单极方式定量位移，并且发射极电位产生电源 4，响应于栅极阈值电压和栅极阈值电压参考值之间的差异; 以及作为驱动半导体元件的装置的恒流驱动电路7a。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008048569A Drive circuit for semiconductor switching element, and power converter 有权
标题翻译：用于半导体开关元件和功率转换器的驱动电路
公开(公告)号：JP2008048569A
公开(公告)日：2008-02-28
申请号：JP2006223839
申请日：2006-08-21
申请人： Mitsubishi Electric Corp , Toshiba Mitsubishi-Electric Industrial System Corp , 三菱電機株式会社 , 東芝三菱電機産業システム株式会社
发明人： HORIGUCHI GOJI , OI TAKESHI , NAKATAKE HIROSHI , TSUCHIYA TAICHIRO , YAMAGUCHI HIROAKI
IPC分类号： H02M1/08
摘要： PROBLEM TO BE SOLVED: To obtain a drive circuit for a semiconductor switching element that facilitates the execution of desired switching control even if a gate threshold voltage of the semiconductor switching element deviates from a desired value, and a power converter that has no output imbalance between elements by easily and surely synchronizing switching-timing even when there are variations in gate threshold voltage of the parallel-connected semiconductor switching element.
SOLUTION: The drive circuit for a semiconductor switching element has in a gate driving circuit 16c a means which detects a voltage between a gate and an emitter during a mirror period when the semiconductor switching element 1 is turned on as the gate threshold voltage, and a means which displaces emitter potential Ve corresponding to a difference between a gate threshold voltage reference value and the detected gate threshold voltage.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使半导体开关元件的栅极阈值电压偏离期望值，也可以获得便于执行期望的开关控制的半导体开关元件的驱动电路，以及没有即使当并联连接的半导体开关元件的栅极阈值电压发生变化时，也可以容易且可靠地同步开关定时，从而在元件之间输出不平衡。解决方案：半导体开关元件的驱动电路在栅极驱动电路16c中具有在半导体开关元件1导通的反射周期期间检测栅极和发射极之间的电压的装置，作为栅极阈值电压以及对应于栅极阈值电压基准值和检测到的栅极阈值电压之间的差异置换发射极电位Ve的装置。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JPH11274398A Power module 失效
标题翻译：电源模块
公开(公告)号：JPH11274398A
公开(公告)日：1999-10-08
申请号：JP7229398
申请日：1998-03-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKAHASHI MITSUGI , KIKUNAGA TOSHIYUKI , OI TAKESHI , USUI OSAMU , MUTO HIROTAKA , HORIGUCHI GOJI , MATSUDA SADAMU , KIKUCHI TAKUMI , KAMIGAI YASUMI , OGUSHI TETSURO
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2924/19107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To obtain a power module in which cracks are prevented at a soldering part without deteriorating handling facility, and reliability is improved. SOLUTION: This power module is provided with a base plate 3A, having an outer surface 3a as an attaching surface, a covering member 8 which is collectively packaged integrally with a central part of the base plate and forms a sealed space, a semiconductor chip 1 accommodated in the sealed space, and external terminals 7 whose one end is electrically connected with the semiconductor chip 1 and the other is exposed to the outer surface of the covering member. The base plate and the covering member are electrically insulated from an electric circuit containing the semiconductor chip in the sealed space. In this case, the base plate is constituted of an insulating substrate, and the semiconductor chip is mounted directly on the base plate.
摘要翻译：要解决的问题：为了获得在焊接部分防止裂纹而不恶化处理设备的功率模块，并且可靠性得到改善。解决方案：该电源模块设置有具有作为安装面的外表面3a的基板3A，与基板的中心部分一体地集成并形成密封空间的覆盖部件8，半导体芯片1 容纳在密封空间中，并且一端与半导体芯片1电连接的外部端子7和另一端暴露于覆盖构件的外表面。基板和覆盖部件与密封空间中包含半导体芯片的电路电绝缘。在这种情况下，基板由绝缘基板构成，半导体芯片直接安装在基板上。

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