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1. 发明专利

JPH11274398A Power module 失效
标题翻译：电源模块
公开(公告)号：JPH11274398A
公开(公告)日：1999-10-08
申请号：JP7229398
申请日：1998-03-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKAHASHI MITSUGI , KIKUNAGA TOSHIYUKI , OI TAKESHI , USUI OSAMU , MUTO HIROTAKA , HORIGUCHI GOJI , MATSUDA SADAMU , KIKUCHI TAKUMI , KAMIGAI YASUMI , OGUSHI TETSURO
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2924/19107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To obtain a power module in which cracks are prevented at a soldering part without deteriorating handling facility, and reliability is improved. SOLUTION: This power module is provided with a base plate 3A, having an outer surface 3a as an attaching surface, a covering member 8 which is collectively packaged integrally with a central part of the base plate and forms a sealed space, a semiconductor chip 1 accommodated in the sealed space, and external terminals 7 whose one end is electrically connected with the semiconductor chip 1 and the other is exposed to the outer surface of the covering member. The base plate and the covering member are electrically insulated from an electric circuit containing the semiconductor chip in the sealed space. In this case, the base plate is constituted of an insulating substrate, and the semiconductor chip is mounted directly on the base plate.
摘要翻译：要解决的问题：为了获得在焊接部分防止裂纹而不恶化处理设备的功率模块，并且可靠性得到改善。解决方案：该电源模块设置有具有作为安装面的外表面3a的基板3A，与基板的中心部分一体地集成并形成密封空间的覆盖部件8，半导体芯片1 容纳在密封空间中，并且一端与半导体芯片1电连接的外部端子7和另一端暴露于覆盖构件的外表面。基板和覆盖部件与密封空间中包含半导体芯片的电路电绝缘。在这种情况下，基板由绝缘基板构成，半导体芯片直接安装在基板上。

2. 发明专利

JP2004032837A Underwater branching device 审中-公开
公开(公告)号：JP2004032837A
公开(公告)日：2004-01-29
申请号：JP2002181419
申请日：2002-06-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIODA HIRONORI , TSUKIJI MAKOTO , MATSUDA SADAMU
IPC分类号： H02G15/14 , H02G15/08
摘要： PROBLEM TO BE SOLVED: To provide an underwater branching device for attaining miniaturization/ high reliability and facilitating repair/ inspection work. SOLUTION: This underwater branching device comprises a pressure casing 3; a light amplifying circuit unit 8 which is provided inside a junction circuit unit 9 and relays a transmitted signal; and a power switching circuit unit 7 disposed with a power switching relay 100 for switching high power supply voltage, the inside of the pressure casing 3 including the junction circuit unit 9 being filled with insulated liquid 11. The power switching relay 100 disposed inside the power switching circuit unit 7 is of contact section open type. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2004319635A Power semiconductor device and a method of manufacturing the same 审中-公开
公开(公告)号：JP2004319635A
公开(公告)日：2004-11-11
申请号：JP2003109307
申请日：2003-04-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MATSUDA SADAMU
IPC分类号： H01L23/36 , H01L29/739 , H01L29/78
CPC分类号： H01L2224/45124 , H01L2224/48091 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device which improves reliability in a heat dissipating characteristic and an insulating characteristic by preventing the generation of a crack due to thermal load at the time of manufacturing or an operation of a power semiconductor device in a junction portion between constituent members requiring electric insulation, and to provide a manufacturing method thereof. SOLUTION: The semiconductor device is provided with a semiconductor chip 2, a metal electrode 3 provided below the bottom surface of the semiconductor chip 2, a metal base plate 4 for dissipating heat generated from the semiconductor chip 2, and a ceramic-based thermosetting material having electric insulating property and a curing temperature within a temperature range rising with the heat generated from the semiconductor chip 2. The semiconductor device is provided with an insulating layer 5 provided between the metal electrode 3 and the metal base plate 4 to be electrically insulated from them while joining both of them. COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2000234993A DEFECT INSPECTION METHOD OF POWER SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000234993A
公开(公告)日：2000-08-29
申请号：JP3708199
申请日：1999-02-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SADAMU , HASEGAWA TAKETOSHI
IPC分类号： G01N7/14 , G01N21/88 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To detect a crack and to evaluate a position by potting liquid silicone gel in a power semiconductor in a transparent container for curing, by reducing pressure in a vacuum for allowing gas inside the crack to appear in the silicone gel. SOLUTION: A ceramic substrate 1 mounting a semiconductor chip 6 is accommodated into a case, silicone gel 8 is poured by a normal pressure or vacuum potting method, and is heated and cured to meet approximately 30-120 mm penetration prescribed by the JIS-K2220 to seal it. The sealed chip is accommodated in a transparent container 13 which is vacuum-sealed with a rubber packing 15 and is evacuated from a cock 14 to maintain a degree of vacuum at approximately 76-7.6 Torr. When the degree of vacuum rises, the pressure difference between the gas in a crack 9 and that of the container is increased, and the gas in the crack 9 appears as a bubble 16 in the silicone gel 8. Furthermore, with the increase of the degree of vacuum, the bubble 16 is expanded, thus the detection and position evaluation of the crack 9 generated in the ceramic substrate 1 can be visually observed.

5. 发明专利

JPH10270609A POWER SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10270609A
公开(公告)日：1998-10-09
申请号：JP7767797
申请日：1997-03-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： KIMURA TOSHINORI , MATSUDA SADAMU , HASEGAWA TAKETOSHI , HIRAMATSU SEIKI , YANAGIURA SATOSHI
IPC分类号： H01L23/28 , H01L23/29 , H01L23/31 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To enhance the reliability by preventing cracking and interface stripping of silicon resin. SOLUTION: A power semiconductor element 3 bonded onto a base board 1 through an insulating board 2 and a control board 5 arranged while being spaced apart from the power semiconductor element 3 are encased in a case 23 and then the power semiconductor element 3 and the control board 5 are sealed by a silicon resin layer. The silicon resin layer is divided into a first silicon resin layer 91 on the power semiconductor element 3 and a second silicon resin layer 92 on the control board 5 side at the power semiconductor element side end face of the control board 5 or at the interface 28 between the control board 5 and the power semiconductor element 3. The control board 5 is supported resiliently by the base board 1 or the case 23.

6. 发明专利

JPH04261032A PRODUCTION OF SEMICONDUCTOR DEVICE WITH LIGHT TRANSPARENT GLASS WINDOW 失效
公开(公告)号：JPH04261032A
公开(公告)日：1992-09-17
申请号：JP1090991
申请日：1991-01-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SADAMU
IPC分类号： H01L21/56 , H01L23/02
摘要： PURPOSE:To improve productivity and miniaturize the sealed shape by sealing a frame-shaped wall and a glass window with a liquid and creating a vacuum in the space to fix the glass window. CONSTITUTION:On the chip 7 surface, a liquid 17 is spray coated using a nozzle 16. Next, on top of a frame-shaped wall 13, a glass window 11 is set, and using a push rod 18, a load is applied from above the glass window 11. When this is done, the frame-shaped wall 13 becomes deformed, a part 19 of the gas in the space 12 is into the air, and the frame-shaped wall 13 and the glass window 11 are sealed by the liquid 17. Next, when the load from the push rod 18 is removed, the frame-shaped wall 13 returns to the original shape. At this time, the space 12 becomes a vacuum and the glass window 11 is pushed in by the atmosphere and fixed on top of the frame-shaped wall 13.

7. 发明专利

JPS59145896A Electrode support conduit for electrical heating of underground hydrocarbon resources 失效
公开(公告)号：JPS59145896A
公开(公告)日：1984-08-21
申请号：JP2092083
申请日：1983-02-09
申请人： Mitsubishi Electric Corp
发明人： HIRASAWA EIICHI , MATSUDA SADAMU , TAKAHASHI ICHIROU , OKABASHI KAZUO
IPC分类号： E21B43/24 , E21C41/24

8. 发明专利

JP2002233042A CABLE CONNECTING STRUCTURE FOR SUBMARINE OPTICAL RELAYING DEVICE 失效
公开(公告)号：JP2002233042A
公开(公告)日：2002-08-16
申请号：JP2001027977
申请日：2001-02-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SADAMU , TSUKIJI MAKOTO , SHIODA HIRONORI
IPC分类号： G02B6/46 , H02G15/14
摘要： PROBLEM TO BE SOLVED: To solve a problem in a cable connecting structure for a submarine optical relaying device that the fusion boundary distance of the polyethylene sheath covering the exposed portion between the polyethylene coat of the taxi cable and that of the feed-through becomes short. SOLUTION: The fusion boundary distance is made long, when the feeding conductor of the tail cable and that of the feed-through are connected and the connecting part is covered with a polyethylene coat, by changing the shape of polyethylene coat of the tail cable at the phase boundary surface with the feeding conductor exposed from the polyethylene coat, and further by changing the shape of polyethylene coat of the feed-through at the phase boundary surface with the feeding conductor exposed from the polyethylene sheath.

9. 发明专利

JP2001327061A SEABED APPARATUS FOR STORING OPTICAL CIRCUIT 失效
公开(公告)号：JP2001327061A
公开(公告)日：2001-11-22
申请号：JP2000139584
申请日：2000-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SADAMU , TSUKIJI MAKOTO
IPC分类号： G02B6/00 , H02G15/08 , H02G15/14
摘要： PROBLEM TO BE SOLVED: To provide a seabed optical repeater and a submarine branching device having superior withstanding force in insulation and in heat radiation. SOLUTION: The submarine branching device includes a pressure-proof frame box 21, a circuit unit 24 for repeater processing in the pressure-proof frame box 21, an optical fiber for carrying a signal from each terminal of the circuit unit 24 to the outside of the frame box 21, and a power feed line. In this case, a portion to be insulated in the frame box 21 is filled with an insulating liquid 35.

10. 发明专利

JPH03104242A MANUFACTURE OF SEMICONDUCTOR DEVICE HAVING LIGHT TRANSMISSION WINDOW 失效
公开(公告)号：JPH03104242A
公开(公告)日：1991-05-01
申请号：JP24299789
申请日：1989-09-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： HASHIMOTO TOMOAKI , MATSUDA SADAMU
IPC分类号： H01L21/56
摘要： PURPOSE:To manufacture a semiconductor device which protects a light receiving area properly and is provided with a light transmission window by evacuating a hollow section which is formed of a transparent material and resin so that it has a specified vacuum pressure and resin-sealing a specified region under a state where the transparent material is adhered to a resin wall. CONSTITUTION:An element where a chip 1 is installed to a die pad 5 is provided and transferred to a specified position in a chamber 11 and mounted thereon. On the other hand, glass 4 is transferred into the chamber 11 and supported by a hand. An evacuation 15 is performed to obtain a specified vacuum degree by means of an evacuation device which is connected with an exhaust port 13. A thrust jig 14 comes into contact with the upper surface of the glass 4 and to a halt under a slightly thrusting condition, which eliminates a clearance 16 formed between the glass 4 and the resin wall 3 since the resin wall 3 is made of silicon and flexible. Therefore, the glass 4 and resin wall 3 are placed in very close contact with each other. Then, the thrusting jig 14 is adapted to rise so that it may be released from the glass 4. At that time, a hollow section is under a vacuum state while the outside is under an atmospheric pressure. Therefore, the differential pressure thrusts the glass 4 against the resin wall 3 and thereby seals the gap with a resin sealing process.

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