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1. 发明专利

JP2010032240A Partial discharge class discrimination apparatus and method of oil insulation device 审中-公开
标题翻译：部分排放分类鉴别装置及油封绝缘装置方法
公开(公告)号：JP2010032240A
公开(公告)日：2010-02-12
申请号：JP2008191872
申请日：2008-07-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： ISHIKURA TAKAHIKO , MUTO HIROTAKA
IPC分类号： G01R31/12
摘要： PROBLEM TO BE SOLVED: To surely and conveniently discriminate a foam PD and a foreign material PD as a main cause of PD generation in an insulation test of an oil insulation device. SOLUTION: A partial discharge class discrimination apparatus detects a partial discharge, and discriminates a partial discharge class if an insulation abnormality occurs within the oil insulation device due to the partial discharge. The partial discharge class discrimination apparatus includes: a sensor 1 for detecting a signal generated by the partial discharge; a measurement instrument 2 for measuring a waveform length of the signal generated by the partial discharge and a polarity of a voltage applied when the partial discharge is generated; and a discrimination apparatus 3 for discriminating the partial discharge class based on the waveform length and the polarity. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：在油绝缘装置的绝缘试验中，确实和方便地区分泡沫PD和异物PD作为PD产生的主要原因。解决方案：局部放电等级识别装置检测局部放电，并且如果由于部分放电而在绝油装置内发生绝缘异常，则判断局部放电等级。局部放电等级识别装置包括：用于检测由局部放电产生的信号的传感器1; 用于测量由局部放电产生的信号的波形长度和产生局部放电时施加的电压的极性的测量仪器2; 以及鉴别装置3，用于基于波形长度和极性鉴别局部放电等级。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2006202930A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2006202930A
公开(公告)日：2006-08-03
申请号：JP2005012220
申请日：2005-01-20
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHIODA HIRONORI , MUTO HIROTAKA , MIZOJIRI TETSUO
IPC分类号： H01L23/00
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/49111 , H01L2224/49175 , H01L2924/1305 , H01L2924/13055 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is high in withstand voltage characteristics to prevent troubles caused by a leakage current in its operating state at a normal temperature. SOLUTION: The semiconductor device is equipped with: an insulating board 18 provided with an upper electrode 16 and a lower electrode 17; a chip electrode; at least one conductive ring 36 going around the chip electrode; a semiconductor chip 21 supported on the insulating board 18; at least one conductive wire 42 extending outward from the chip electrode beyond the conductive ring 36; and a minimally charged part 38 covering a part of the conductive ring 36. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有高耐压特性的半导体器件，以防止在正常温度下其工作状态下的漏电流引起的故障。解决方案：半导体器件配备有：设置有上电极16和下电极17的绝缘板18; 芯片电极; 围绕芯片电极的至少一个导电环36; 支撑在绝缘板18上的半导体芯片21; 从芯片电极向外延伸超过导电环36的至少一根导线42; 以及覆盖导电环36的一部分的最小带电部分38.权利要求：（C）2006，JPO＆NCIPI

3. 发明专利

JP2004144555A High-frequency electric field measuring apparatus 审中-公开
公开(公告)号：JP2004144555A
公开(公告)日：2004-05-20
申请号：JP2002308314
申请日：2002-10-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TSUJI TAKAMASA , ABE JUNICHI , NAGATA SHIGEYUKI , MUTO HIROTAKA
IPC分类号： G01R29/08
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency electric field measuring apparatus for easily and surely measuring a high-frequency electric field strength distribution.
SOLUTION: The high-frequency electric field measuring apparatus has a detection section 13, where a plurality of light-emitting elements 11, that are composed so that they emit light with specific electric field strength, are arranged in an array. The high-frequency electric field strength distribution applied to space, where the detection section 13 is installed, is measured, based on the presence or absence of each emission of the plurality of light-emitting elements 11.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JPH11271382A Device for detecting partial discharge generation position of conducting device and device for detecting partial discharge strength 失效
标题翻译：用于检测导电装置的部分放电产生位置的装置和用于检测部分放电强度的装置
公开(公告)号：JPH11271382A
公开(公告)日：1999-10-08
申请号：JP5521198
申请日：1998-03-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MUTO HIROTAKA , DOI MASAFUMI
IPC分类号： G01R31/12 , G01R31/08
摘要： PROBLEM TO BE SOLVED: To obtain a partial discharge generation position detecting device for recognizing the radial position of partial discharge in a conducting device having a conductor coaxially housed in a cylindrical body. SOLUTION: An electromagnetic wave mode generated due to the partial discharge in a tank 11 is detected, Fourier transformation is operated by a high speed Fourier transforming device 23, and a frequency spectrum is obtained. A rate U of strength A of the first frequency components smaller than the interrupting frequencies of a TE11 mode estimated from the size of the tank 11 and an inside high voltage conductor 12 to strength A2 of the second frequency components which are the interrupting frequencies of the TE11 mode or more is calculated by a divider 26. Which of a free foreign matter or a fixed foreign matter causes the discharge is decided from the presence or absence of the temporary change of the rate U by a judging device 27. In the case of the fixed foreign matter, the radial generation position in the tank of the partial discharge is obtained from the rate U. The strength A1 is the strength of the TEM mode, and the radial position of the discharge can be recognized from the rate of the TEM mode in the electromagnetic wave mode.
摘要翻译：要解决的问题：获得用于识别具有同轴地容纳在圆柱体中的导体的导电装置中的局部放电的径向位置的局部放电产生位置检测装置。解决方案：检测由于罐11中局部放电而产生的电磁波模式，利用高速傅里叶变换装置23进行傅立叶变换，得到频谱。第一频率分量的强度A的比率U比从罐11和内部高压导体12的尺寸估计出的TE11模式的中断频率小到第二频率分量的强度A2，第二频率成分是中断频率 TE11模式以上由分割器26计算。由判定装置27的存在或不存在速率U的暂时性变化而决定释放的任何一种无害异物或固定异物。固定的异物，局部放电的罐中的径向产生位置从速率U获得。强度A1是TEM模式的强度，并且可以从TEM的速率识别放电的径向位置模式在电磁波模式。

5. 发明专利

JP2012112925A Insulation defect inspection device of rotating electrical machine coil, and method for inspecting insulation defect 审中-公开
标题翻译：旋转电机线圈绝缘缺陷检查装置及检查绝缘缺陷的方法
公开(公告)号：JP2012112925A
公开(公告)日：2012-06-14
申请号：JP2011026629
申请日：2011-02-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OKADA SHINICHI , SHIODA HIRONORI , MUTO HIROTAKA , KANEDA KICHIJI , TSUJI TAKAMASA
IPC分类号： G01R31/06 , G01R31/12 , G01R31/34
摘要： PROBLEM TO BE SOLVED: To provide an insulation defect inspection device of a rotating electrical machine coil capable of preventing the generation of discharge and deterioration in insulation of a rotating electrical machine coil at a part other than a test object portion and capable of surely detecting a latent insulation defect of a high-pressure terminal-side coil.SOLUTION: This insulation defect inspection device of a rotating electrical machine coil incudes: a single-pole impulse power supply; a first power wiring and a second power wiring led out from a power supply; a high-frequency reactor connected to the first power wiring and the second power wiring; and a partial discharge detecting sensor disposed at an external wiring of the first power wiring. The first power wiring is connected to one end of the rotating electrical machine coil, the second power wiring is connected to the other end of the rotating electrical machine coil, and the high-frequency reactor is a variable high-frequency reactor capable of changing the inductance.
摘要翻译：要解决的问题：提供一种旋转电机线圈的绝缘缺陷检查装置，其能够防止在测试对象部分以外的部分处的旋转电机线圈的放电和绝缘的劣化，并且能够肯定地检测出高压端子侧线圈的潜在绝缘缺陷。
解决方案：旋转电机线圈的绝缘缺陷检查装置包括：单极脉冲电源; 从电源引出的第一电力线和第二电力线; 连接到第一电力线和第二电力线的高频电抗器; 以及局部放电检测传感器，其布置在第一电力布线的外部布线处。第一电力线连接到旋转电机线圈的一端，第二电力线连接到旋转电机线圈的另一端，高频电抗器是可变高频电抗器，电感。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011095036A Partial discharge measuring apparatus 有权
标题翻译：部分放电测量装置
公开(公告)号：JP2011095036A
公开(公告)日：2011-05-12
申请号：JP2009247673
申请日：2009-10-28
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KANEDA KICHIJI , MUTO HIROTAKA
IPC分类号： G01R31/12
摘要： PROBLEM TO BE SOLVED: To provide a partial discharge measuring apparatus that measures partial discharge in various bands by performing measurements using a plurality of partial discharge measuring circuits of different frequency bands simultaneously. SOLUTION: The partial discharge measuring apparatus includes: a partial discharge measuring circuit 52 for detecting a pulsed electromagnetic wave occurring along with partial discharge occurring in an object under measurement 91 caused by a predetermined high voltage application from a high voltage generation means 30 in a narrow band with a center frequency of 1.0 to 2.0 GHz and a bandwidth of ±100 MHz; a partial discharge measuring circuit 53 for detecting a discharge current along with the partial discharge in a band of 150 MHz ±100 MHz; and a partial discharge measuring circuit 54 for detecting the discharge current along with the partial discharge in a band of 600 MHz ±100 MHz. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过使用多个不同频带的局部放电测量电路同时进行测量来测量各种频带中的局部放电的局部放电测量装置。解决方案：局部放电测量装置包括：局部放电测量电路52，用于检测在由高电压产生装置30预定的高电压施加引起的在被测物体91内发生的局部放电所产生的脉冲电磁波在中心频率为1.0至2.0 GHz，带宽为±100 MHz的窄带中; 用于在150MHz±100MHz的频带中检测放电电流以及局部放电的局部放电测量电路53; 以及用于在600MHz±100MHz的频带中检测放电电流以及局部放电的局部放电测量电路54。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2011030424A Power semiconductor module 有权
标题翻译：功率半导体模块
公开(公告)号：JP2011030424A
公开(公告)日：2011-02-10
申请号：JP2010252572
申请日：2010-11-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： KINOUCHI SHINICHI , MUTO HIROTAKA , OKUDA TATSUYA
IPC分类号： H02M7/48
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/49111 , H01L2924/19107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To reduce energy loss due to reverse recovery current of a reflux diode and to raise a rated voltage in a power semiconductor module of a power conversion circuit used for AC-DC conversion or the like. SOLUTION: The power semiconductor module comprises two or more switching elements connected in parallel and a Schottky barrier diode comprising two or more SiCs connected in series. The Schottky barrier diode comprising the two or more SiCs connected in series are connected in reverse parallel to the two or more switching elements connected in parallel. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了减少由于回流二极管的反向恢复电流引起的能量损失并且提高用于AC-DC转换等的功率转换电路的功率半导体模块中的额定电压。解决方案：功率半导体模块包括并联连接的两个或更多个开关元件和包括串联连接的两个或更多个SiC的肖特基势垒二极管。包括串联连接的两个或更多个SiC的肖特基势垒二极管与并联连接的两个或更多个开关元件反向并联连接。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010281785A Device and method for detecting defect of object to be measured 有权
标题翻译：用于检测被测物体缺陷的装置和方法
公开(公告)号：JP2010281785A
公开(公告)日：2010-12-16
申请号：JP2009137170
申请日：2009-06-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMATAKE ATSUSHI , SHIODA HIRONORI , MUTO HIROTAKA , YAMAGUCHI YOSHIHIRO
IPC分类号： G01N23/04 , G01R31/12
摘要： PROBLEM TO BE SOLVED: To provide a device and method for detecting defects of an object to be measured for specifying a defect generating factor by detecting a detailed position of an insulation defect generating part and determining the defect state inside an apparatus such as a miniaturized power module increasing in density.
SOLUTION: When test voltage is applied to the object to be measured and the defect position is detected by measuring partial discharge by radiating beam-like X-rays, the irradiation position can be accurately controlled by enabling a transmission image of an irradiation range to be observed and by recognizing the X-ray irradiation position in association with the whole transmission image, and the accurate position of the defect can be specified by visualizing the defect during the defect detection. Further, the defect generating factor is specified based on this and the decision results of the defect condition by measurement of the partial discharge waveform.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于通过检测绝缘缺陷产生部分的详细位置来检测待测物体的缺陷以指定缺陷产生因子并确定诸如以下的装置内的缺陷状态的装置和方法密度增加的小型化功率模块。解决方案：通过辐射束状X射线测量局部放电，当测试电压施加到待测对象并检测缺陷位置时，可以通过使辐照的透射图像能够精确地控制照射位置并且通过与整个透射图像相关联地识别X射线照射位置，并且可以通过在缺陷检测期间可视化缺陷来指定缺陷的准确位置。此外，基于此指定缺陷产生因子，并通过测量局部放电波形来确定缺陷状况的判定结果。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2008116476A Partial discharge intensity detector for conduction device 有权
标题翻译：导电装置的部分放电强度检测器
公开(公告)号：JP2008116476A
公开(公告)日：2008-05-22
申请号：JP2008014855
申请日：2008-01-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MUTO HIROTAKA , DOI MASAFUMI
IPC分类号： G01R31/12 , H01H33/56 , H02B13/065 , H02G5/10
摘要： PROBLEM TO BE SOLVED: To provide a partial discharge intensity detector for a conduction device for obtaining partial discharge intensity in the conduction device having a conductor coaxially housed in a cylindrical body. SOLUTION: Electromagnetic waves generated by partial discharge inside a tank 11 are detected by an electromagnetic wave detector 21 and Fourier transformation is carried out by a fast Fourier transformation device 23 for finding a frequency spectrum. A frequency corresponding to a TE21 mode presumable from the dimension of the tank 11 and that of an internal high-voltage conductor 12 is previously found, while spectrum intensity at the frequency, for example, at 650 MHz is found by an extractor 15, and the change in the spectrum intensity along with the lapse of time and the like is displayed on a display device 21. The TE21 mode may be used as an index of discharge intensity since the TE21 mode hardly depends on the radius directional position of the cylindrical body. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于在具有同轴地容纳在圆柱体中的导体的导电装置中获得局部放电强度的导电装置的局部放电强度检测器。解决方案：通过电磁波检测器21检测在罐11内部分放电产生的电磁波，并通过快速傅里叶变换装置23进行傅里叶变换，以求出频谱。预先找到对应于从罐11的尺寸和内部高压导体12的尺寸推定的TE21模式的频率，而通过提取器15发现在例如650MHz的频率处的频谱强度，以及频谱强度的变化以及时间的流逝等被显示在显示装置21上。由于TE21模式几乎不依赖于圆筒体的半径方向位置，所以可以将TE21模式用作放电强度的指标。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2005277287A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2005277287A
公开(公告)日：2005-10-06
申请号：JP2004091659
申请日：2004-03-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SUGAWARA TAKASHI , MUTO HIROTAKA
IPC分类号： H01L25/18 , H01L23/00 , H01L25/04
CPC分类号： H01L2224/48247 , H01L2924/19107 , H01L2924/3025 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To effectively soften the affection of a high voltage section to a semiconductor device of low-voltage drive and to prevent the semiconductor device of low-voltage drive from malfunctioning.
SOLUTION: In the semiconductor device that a semiconductor device chip 2 of high voltage drive and the semiconductor chip 3 of low-voltage drive are accommodated in one semiconductor package sealed by an electrically insulating sealant 1, wherein a field suppression section 5 that suppresses an electric line of force running from a high voltage circuit section of the semiconductor chip of high-voltage drive in the semiconductor package to a low-voltage circuit section of the semiconductor chip in the semiconductor package is disposed on the high-voltage circuit section, the low-voltage circuit section or at least a part thereof is disposed so as to be present at a position separated from the semiconductor device chip.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：有效地软化高压部分对低压驱动的半导体器件的影响，并防止低压驱动的半导体器件发生故障。解决方案：在将由高电压驱动的半导体器件芯片2和低电压驱动的半导体芯片3容纳在由电绝缘密封剂1密封的一个半导体封装件中的半导体器件中，其中，场抑制部分5 抑制从半导体封装中的高压驱动用半导体芯片的高压电路部分向半导体封装中的半导体芯片的低压电路部分行进的电力线设置在高压电路部低电压电路部分或其至少一部分配置成存在于与半导体器件芯片分离的位置。版权所有（C）2006，JPO＆NCIPI

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