专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2001118837A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JP2001118837A
公开(公告)日：2001-04-27
申请号：JP2000250266
申请日：2000-08-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOICHIRO , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： C23C16/46 , H01L21/31 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To improve the yield and quality of a semiconductor by improving the purity of a film forming material and, in addition, to prevent the occurrence of a failure, such as the corrosion of a heating source, etc., caused by a reaction gas. SOLUTION: In a semiconductor manufacturing device, a parting member 5 and low-pressure spaces 209a and 209b are provided between a reaction space 3 and a heating source chamber 215 in which a high-temperature section, such as the wafer heating source 4, etc., exists.

2. 发明专利

JP2001110797A METHOD FOR FORMING NITRIDE FILM 失效
公开(公告)号：JP2001110797A
公开(公告)日：2001-04-20
申请号：JP2000250273
申请日：2000-08-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOICHIRO , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： C23C16/34 , H01L21/31 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device suppressing a by- product (dust) in a reaction chamber, improving productivity and making a process condition and the like to be a minimum and to provide a thin-film forming method. SOLUTION: A constitution element (M) except for the nitrogen of a nitride film, reaction gas (M-N-H gas), constituted of nitrogen and hydrogen and ammonia, are used and the reaction gas is generated in a mixing chamber 503 installed on the front side of a reaction chamber 3.

3. 发明专利

JP2001077071A GAS SCREENING METHOD OF SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JP2001077071A
公开(公告)日：2001-03-23
申请号：JP2000250268
申请日：2000-08-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOICHIRO , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To protect the surface of a wafer holding mechanism which comes into contact with a wafer against cleaning gas by inert gas, by a method wherein the wafer contacting surface of the wafer holding mechanism where no excess deposit is attached is covered, and cleaning gas is fed to flow. SOLUTION: A semiconductor wafer 1 is heated with a heater 402 through the intermediary of a susceptor (wafer holding mechanism) 51, and the susceptor 51 is supported with an annular heat insulating material 404 as being thermally insulated. Furthermore, cleaning gas is made to flow as inert gas is fed to flow from a gas nozzle 6 or the one side of the holding mechanism 51. When cleaning gas is made to flow, the wafer contacting surface of the susceptor 51 where no excess deposit is attached is covered with a semiconductor wafer 1, by which cleaning gas is restrained from coming into contact with the contacting surface, the wafer contacting surface of the susceptor 51 where an excess deposit is attached can be restrained from being etched when a cleaning operation is carried out.

4. 发明专利

JPS63312978A THIN FILM FORMING DEVICE 失效
公开(公告)号：JPS63312978A
公开(公告)日：1988-12-21
申请号：JP14787787
申请日：1987-06-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： MORITA NORIKO , HOSHINOUCHI SUSUMU , KASHIRAMOTO NOBUYUKI , TAKAHAMA SUSUMU
IPC分类号： C23C16/48 , C23C16/27 , C23C16/511
摘要： PURPOSE:To form a high-quality thin film at low temp. and at a high rate by alternately moving a substrate between a film forming chamber by UV laser light and a film quality control chamber by the ion generated by plasma through a susceptor. CONSTITUTION:The laser light 2 from a UV laser oscillator 1 is radiated through a window 4 in a first chamber 5a to decompose a film forming gas such as CH4 introduced from a supply port 51 under about several - several tens Torr pressure, and the thin film of diamond, etc., is formed on the surface of a substrate 6 on the susceptor 7. The substrate 6 is then moved into a second chamber 5b kept at about 10 -10 Torr pressure by a driving gear 13 through a communicating part 5C. The ion generated in the plasma 11 of hydrogen, etc., produced in an electron cyclotron resonance plasma producer 8 is accelerated, and introduced into the chamber 5b through a mesh electrode 12. The ion is allowed to collide with the thin film on the substrate 6 to control the quality of the film.

5. 发明专利

JPH06244269A SEMICONDUCTOR MANUFACTURING APPARATUS, WAFER VACUUM CHUCK DEVICE THEREOF, AND GAS CLEANING AND NITRIDE FILM FORMATION THEREFOR 失效
公开(公告)号：JPH06244269A
公开(公告)日：1994-09-02
申请号：JP19756193
申请日：1993-08-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YOSHIMI , KANDA TOMOYUKI , KITANO KATSUHISA , YOSHIDA KAZUO , ONISHI HIROSHI , YAMANISHI KENICHIRO , SASAKI SHIGEO , KOMORI HIDEKI , EJIMA TAIZO , TSUTAHARA KOUICHIROU , NOGUCHI TOSHIHIKO , TAKAHAMA SUSUMU , KUSAKABE YOSHIHIKO , IWAMOTO TAKESHI , KOSAKA NORIYUKI
IPC分类号： B23Q3/08 , B25B11/00 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , H01L21/683 , H01L21/68
摘要： PURPOSE:To provide a vacuum chuck device which is able to fix a semiconductor wafer by suction under a reduced pressure making its wafer sucking surface face down by a method wherein wafer vacuum sucking grooves are provided in blocks to the wafer sucking surface of the device. CONSTITUTION:Wafer vacuum sucking grooves 125 are provided in blocks to the wafer sucking surface of a vacuum chuck device 101. For instance, a vacuum suction opening 104 and a vacuum suction path 105 are provided to each sucking groove 125 so as to evacuate it. By this setup, when the vacuum chuck device 101 fixes the semiconductor wafer 1 by suction under a reduced pressure making its wafer sucking surface face down, the other block grooves 125 can be prevented from deteriorating in degree of vacuum even if one of the block grooves 125 is lessened in degree of vacuum due to that dust attached to the sucking surface of the device 101 or the warpage of the semiconductor wafer 1 makes a part of the wafer sucking surface of the device 101 around the block groove 125 concerned deteriorate in airtightness. Therefore, a pressure difference can be kept large enough under a reduced pressure throughout the wafer sucking surface of the chuck device 101, so that the chuck device 101 can surely holds the semiconductor wafer 1 by suction.

6. 发明专利

JPH05304144A 失效
公开(公告)号：JPH05304144A
公开(公告)日：1993-11-16
申请号：JP10744392
申请日：1992-04-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHAMA SUSUMU , GOTO YOSHIYUKI , ONISHI HIROSHI , KUSAKABE YOSHIHIKO
IPC分类号： H01L21/31 , H01L21/318
摘要： PURPOSE:To deposit a high quality silicon nitride having stoichiometrically controlled composition at high yield by suppressing production of subreaction product NH4Cl which causes production of dust. CONSTITUTION:Material gas 5 containing silicon atoms is supplied, at first, onto a substrate 1 and thermally decomposed to deposit silicon on the substrate 1 and then material gas 7 containing nitrogen atoms is supplied onto the heated substrate to nitrify the silicon. Alternately, material gas not containing chlorine but containing silicon atoms and another material gas not containing chlorine but containing nitrogen atoms are concurrently supplied onto the substrate to deposit silicon nitride and then material gas containing nitrogen atoms is supplied in order to sufficiently nitrify the silicon nitride.

7. 发明专利

JPH02305969A PRETREATMENT FOR ELECTROLESS PLATING 失效
公开(公告)号：JPH02305969A
公开(公告)日：1990-12-19
申请号：JP12522289
申请日：1989-05-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： ITO KEIKO , OMORI NOBUHIKO , TAKAHAMA SUSUMU , INOUE MASAMI , OMINE MEGUMI
IPC分类号： C23C18/30
摘要： PURPOSE:To form microruggedness on the surface of a plastic material and to improve the adhesive property of an electroless plating film by applying paste contg. the powder of metals on the plastic material, then irradiating the coating with a UV laser and decomposing away the part which is not hindered by the metal powder. CONSTITUTION:The paste contg. the metal powder 2 of Pd or Ag, etc., which is the nucleus for plating is applied in the form of an extremely thin film on the surface of the nonconductive plastic material 1. The paste is then irradiated with the laser beam 5 from the surface thereof. The laser beam A of the part where the metal powder 2 exists is reflected by the metal powder 2 and the laser beam B of the part where the metal powder 2 does not exist is absorbed by the paste 3, by which the paste 3 is decomposed away. The surface is roughened by the remaining of the metal powder 2 of the Pd or Ag, etc. The powder 2 of the Pd or Ag acts as the nucleus for plating and thereafter, the electroless plating operation is steadily executed to easily form the electroless plating film having the excellent adhesive strength.

8. 发明专利

JPH01208470A THIN FILM-FORMING EQUIPMENT 失效
公开(公告)号：JPH01208470A
公开(公告)日：1989-08-22
申请号：JP3441788
申请日：1988-02-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHAMA SUSUMU , ZUMOTO NOBUYUKI , MORITA NORIKO , IWASA TATSUYA
IPC分类号： C23C16/26 , C23C16/27 , C23C16/48 , C23C16/50
摘要： PURPOSE:To obtain a thin, high-quality and large area film with high efficiency at low temp., by providing an ultraviolet laser generator to dissociate a gas for the film formation, and simultaneously a microwave discharging device to generate plasma for controlling the film formation. CONSTITUTION:A substrate 6 to be treated is placed on a susceptor 7 and set in a reaction chamber 5 and a CCl4 has for film formation is supplied through a gas inlet 51 and, further, an ultraviolet laser beam 2 from an ultraviolet laser generator 1 is applied, after increased in the high photon energy of the ultraviolet laser beam 2 by means of a cylindrical telescope 3, to the surface of the substrate 6, in parallel, to dissociate CCl4. Simultaneously, H2 ions in H2 plasma in a plasma production chamber 8 are accelerated by an accelerating electrode 12 and applied to the substrate 6 surface. C resulting from the photodissociation of CCl4 is allowed to form the thin film crystal of diamond on the substrate 6, by which a thin diamond film can be formed on the substrate 6 at a temp. as low as

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式