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    • 1. 发明专利
    • Method for manufacturing magnetic field detection apparatus, and magnetic field detection apparatus
    • 磁场检测装置的制造方法以及磁场检测装置
    • JP2012063232A
    • 2012-03-29
    • JP2010207408
    • 2010-09-16
    • Mitsubishi Electric Corp三菱電機株式会社
    • FURUKAWA TAISUKEOSANAGA TAKASHI
    • G01R33/09H01L43/08H01L43/12
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing a magnetic field detection apparatus having spin valve elements on a substrate.SOLUTION: The method for manufacturing the magnetic field detection apparatus includes: a step for preparing a substrate 1; a step for forming spin valve elements 11 to 14 each including a fixed layer, an insulating layer and a free layer on the substrate; a step for forming collection magnetism areas 21, 22 in the vicinity of each spin valve element; and a magnetization step for magnetizing the free layer of each spin valve element by applying a magnetic field of an H direction to the substrate. The magnetization step applies a magnetic field of a predetermined direction different from the H direction to each spin valve element by the collection magnetism areas 21, 22 to magnetize the spin valve element in the predetermined direction different from the H direction.
    • 要解决的问题:提供一种在衬底上制造具有自旋阀元件的磁场检测装置的方法。 解决方案:磁场检测装置的制造方法包括:准备基板1的工序; 在基板上形成具有固定层,绝缘层和自由层的自旋阀元件11〜14的工序; 在每个自旋阀元件附近形成收集磁性区域21,22的步骤; 以及磁化步骤,用于通过向衬底施加H方向的磁场来磁化每个自旋阀元件的自由层。 磁化步骤通过收集磁性区域21,22将与H方向不同的预定方向的磁场施加到每个自旋阀元件,以沿与H方向不同的预定方向磁化自旋阀元件。 版权所有(C)2012,JPO&INPIT
    • 2. 发明专利
    • Magnetic field detector, and method for regulating the same
    • 磁场检测器及其调节方法
    • JP2010197399A
    • 2010-09-09
    • JP2010085056
    • 2010-04-01
    • Mitsubishi Electric Corp三菱電機株式会社
    • FURUKAWA TAISUKEKOBAYASHI HIROSHIOSANAGA TAKASHIKUROIWA TAKEHARUHAIYAMA SATOKATSUTAKI MASAKAZU
    • G01R33/09G01D5/18G01R33/02H01L43/08
    • PROBLEM TO BE SOLVED: To provide a magnetic field detector capable of changing freely detection range and detection sensitivity in response to use.
      SOLUTION: A bias magnetic field Hb and an external magnetic field Hex are applied to a magnetoresistance effect element 2. The bias magnetic field Hb is functioned to disturb the external magnetic field Hex applied onto the magnetoresistance effect element 2, since the bias magnetic field Hb and the external magnetic field Hex are generated on the same straight line. A free layer is thereby restrained from being magnetized in the magnetoresistance effect element 2, and a rotation angle of a magnetization vector 42 is also reduced thereby. A characteristic of a resistance value in the magnetoresistance effect element 2 is, therefore, shifted by the bias magnetic field Hb, with respect to the external magnetic field Hex.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供能够响应于使用而能够自由地改变检测范围和检测灵敏度的磁场检测器。 解决方案:将偏置磁场Hb和外部磁场Hex施加到磁阻效应元件2.偏置磁场Hb用于干扰施加到磁阻效应元件2上的外部磁场Hex,因为偏置 在相同的直线上产生磁场Hb和外部磁场Hex。 由此,自由层被抑制在磁阻效应元件2中被磁化,并且磁化矢量42的旋转角也因此减小。 因此,磁阻效应元件2中的电阻值的特性相对于外部磁场Hex偏移偏置磁场Hb。 版权所有(C)2010,JPO&INPIT
    • 3. 发明专利
    • Nitride semiconductor device, and method of manufacturing the same
    • 氮化物半导体器件及其制造方法
    • JP2010093042A
    • 2010-04-22
    • JP2008261321
    • 2008-10-08
    • Mitsubishi Electric Corp三菱電機株式会社
    • SHIOZAWA KATSUOMIABE YUJITOKUDA YASUKIFURUKAWA TAISUKEKANEMOTO KYOZOSUZUKI YOSUKE
    • H01S5/323H01S5/22
    • PROBLEM TO BE SOLVED: To provide a nitride semiconductor device on which an electrode is controlled from being peeled off to allow stable behavior.
      SOLUTION: An adhesive layer 21 is formed on a surface of an insulating film 13 formed on a side surface of a ridge 12 of a p-type semiconductor layer 11 and the ridge 12 is covered by a p-type electrode 14 via the adhesive layer 21. In this arrangement, the adhesive layer 21 is positioned between the insulating film 13 and the p-type electrode 14 on the side surface of the ridge 12. As this adhesive layer 21, an adhesive layer is prepared that consists of a nitride material containing gallium (Ga). Further, as a substitute for the adhesive layer 21, an adhesive layer is provided that is composed of an alloy material made of a metallic material and an oxidizable material that is easily oxidized. Hereby, the adhesiveness of the insulating film 13 and the p-type electrode 14 is enhanced and peel-off of the p-type electrode 14 from the insulating film 13 can be suppressed.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种氮化物半导体器件,其上控制电极被剥离以允许稳定的行为。 解决方案:在形成在p型半导体层11的脊12的侧表面上的绝缘膜13的表面上形成粘合剂层21,并且脊12被p型电极14覆盖,经由 粘合剂层21.在该布置中,粘合剂层21位于脊12的侧表面上的绝缘膜13和p型电极14之间。作为该粘合层21,制备粘合剂层,其由 含有镓(Ga)的氮化物材料。 此外,作为粘合剂层21的替代物,提供了由金属材料制成的合金材料和容易氧化的可氧化材料构成的粘合剂层。 由此,能够提高绝缘膜13和p型电极14的密合性,能够抑制p型电极14与绝缘膜13的剥离。 版权所有(C)2010,JPO&INPIT
    • 4. 发明专利
    • Magnetic rotation sensor
    • 磁力旋转传感器
    • JP2009276216A
    • 2009-11-26
    • JP2008128154
    • 2008-05-15
    • Mitsubishi Electric Corp三菱電機株式会社
    • AKIYAMA KOICHIFURUKAWA TAISUKETAKADA YUTAKAKUROIWA TAKEHARUABE YUJI
    • G01D5/245
    • PROBLEM TO BE SOLVED: To provide a magnetic rotation sensor capable of acquiring great output with high sensitivity, even when being not arranged close to a gear which is a detection object.
      SOLUTION: This magnetic rotation sensor is equipped with: a bias magnet arranged on the outer circumference of a rotator having concavity and convexity on the outer circumference, for generating a magnetic flux in the same direction as a direction of a rotating shaft of the rotator; a board-like magnetic flux guide arranged close to the bias magnet so as to allow passage of the magnetic flux generated from the bias magnet; and a magnetic resistance element arranged closer to a position on the rotator side than the magnetic flux guide, for detecting a magnetic flux direction near the magnetic flux guide. The shape of the magnetic flux guide is constituted to be a shape enclosing a part except on the rotator side of the magnetic resistance element as a view from the same direction as the direction of the rotating shaft of the rotator so that the magnetic flux direction near the magnetic flux guide on a plane including a radial direction of the rotator is changed by being rotated at 360 degrees according to the position of concavity and convexity on the outer circumference of the rotator.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:即使在没有靠近作为检测对象的齿轮的情况下提供能够以高灵敏度获取大输出的磁旋转传感器。 解决方案:该磁旋转传感器配备有:设置在外周具有凹凸的旋转体的外周上的偏置磁体,用于沿与旋转轴的旋转轴方向相同的方向产生磁通量 旋转器 布置成靠近偏置磁体的板状磁通导向器,以允许从偏置磁体产生的磁通量通过; 以及设置在比磁通导向件更靠近旋转体侧的位置的磁阻元件,用于检测磁导引附近的磁通方向。 磁通引导件的形状被构成为从除了旋转体的旋转轴的方向相同的方向外的除了磁阻元件的旋转体侧的部分的形状,使得磁通方向接近 包括旋转体的径向的平面上的磁通引导件根据转子的外周上的凹凸的位置以360度旋转而改变。 版权所有(C)2010,JPO&INPIT
    • 5. 发明专利
    • 磁界検出装置
    • 磁场检测装置
    • JP2014202704A
    • 2014-10-27
    • JP2013081331
    • 2013-04-09
    • 三菱電機株式会社Mitsubishi Electric Corp
    • FURUKAWA TAISUKENAKADA MUNEKIKOBAYASHI AKIRATSUKAMOTO MANABU
    • G01D5/245G01R33/02G01R33/09
    • 【課題】回転磁界を高精度で検出することが可能な磁界検出装置を提供する。【解決手段】この磁界検出装置では、回転磁界の回転方向に2つのセンサチップSC1,SC2を配列し、センサチップSC11の複数のTMR素子M1のうちの1つのTMR素子M1と、センサチップSC12の複数のTMR素子M2のうちの1つのTMR素子M2を選択し、選択したTMR素子M1,M2をボンディングワイヤWを用いて制御IC13に接続する。選択したTMR素子M1,M2における磁界変化の位相差は180度である。制御IC13は、TMR素子M1,M2の抵抗変化に基づいて、回転磁界の磁界変化を示す信号を生成する。したがって、TMR素子M1,M2間の位置ズレを無くすことができる。【選択図】図5
    • 要解决的问题:提供能够高精度地检测旋转磁场的磁场检测装置。解决方案:在磁场检测装置中,两个传感器芯片SC1,SC2沿旋转磁场的旋转方向排列,单个TMR 选择传感器芯片SC11的多个TMR元件M1中的元件M1和传感器芯片SC12的多个TMR元件M2中的单个TMR元件M2,并且所选择的TMR元件M1,M2连接到控制 通过使用接合线W的IC13。所选择的TMR元件M1,M2中的磁场变化的相位差为180度。 控制IC13基于TMR元件M1,M2的电阻变化产生表示旋转磁场的磁场变化的信号。 结果,可以消除TMR元件M1,M2之间的位置偏差。
    • 6. 发明专利
    • Magnetic field detector, current detector, semiconductor integrated circuit, and magnetic field detection method
    • 磁场检测器,电流检测器,半导体集成电路和磁场检测方法
    • JP2014153053A
    • 2014-08-25
    • JP2013019835
    • 2013-02-04
    • Mitsubishi Electric Corp三菱電機株式会社
    • OSANAGA TAKASHIFURUKAWA TAISUKEOJI HIROSHI
    • G01R33/09H01L43/08
    • PROBLEM TO BE SOLVED: To correct the offsets of magnetic field responses of detection elements by the use of reference elements used as constant resistance, thereby facilitating the control of a zero point output in a magnetic field detector.SOLUTION: A magnetic field detector comprises: two or more detection elements 101, 102; two or more reference elements 111, 112; and a magnetic field applying wire 151 that applies bias magnetic fields to magnetization hard axis directions of free layers of the detection elements 101, 102 to correct offsets in magnetic field responses of the detection elements. The reference elements and the detection elements have structures that laminate fixed layers where magnetization directions are fixed and free layers where magnetization directions changes in accordance with external magnetic fields. The reference elements 111, 112 includes: a state that the magnetization directions of the fixed layers and the magnetization directions of the free layers in non-magnetic fields are in parallel with each other; and a state that they are in anti-parallel with each other. The detection elements 101, 102 have the magnetization directions of the fixed layers and the magnetization directions of the free layers in non-magnetic fields that are different from each other.
    • 要解决的问题:通过使用用作恒定电阻的参考元件来校正检测元件的磁场响应的偏移,从而有助于控制磁场检测器中的零点输出。解决方案:磁场检测器包括: 两个或更多个检测元件101,102; 两个或更多个参考元件111,112; 以及对检测元件101,102的自由层的磁化硬轴方向施加偏置磁场的磁场施加线151,以校正检测元件的磁场响应中的偏移。 参考元件和检测元件具有将磁化方向固定的固定层和磁化方向根据外部磁场变化的自由层的结构。 参考元件111,112包括:非磁场中的固定层的磁化方向和自由层的磁化方向彼此平行的状态; 以及它们彼此反平行的状态。 检测元件101,102具有彼此不同的非磁场中的固定层的磁化方向和自由层的磁化方向。
    • 7. 发明专利
    • Current sensor
    • 电流传感器
    • JP2014126384A
    • 2014-07-07
    • JP2012281337
    • 2012-12-25
    • Mitsubishi Electric Corp三菱電機株式会社
    • NAKADA MUNEKIFURUKAWA TAISUKE
    • G01R15/20
    • PROBLEM TO BE SOLVED: To provide a current sensor capable of increasing the intensity of a signal to be detected from magnetic flux density which is generated by detection target currents, and increasing the sensitivity of current detection while the influence of an external magnetic field to a magnetic sensor is maintained equivalent.SOLUTION: In a current sensor including: a magnetic substance core 2; and a magnetic sensor 3. The magnetic substance core 2 includes: a U-shaped part 22 constituted of a core terminal end 21 and a bent part 28; a shielding part 24 for shielding an internal hollow part 25 inside the U-shaped part 22; and a protrusion part 23 disposed on the inner circumference side of the end of the U-shaped part. A magnetic sensor 3 is disposed in a gap space facing the end face of the protrusion part 23.
    • 要解决的问题:提供一种电流传感器,其能够通过由检测目标电流产生的磁通密度来增加要检测的信号的强度,并且增加电流检测的灵敏度,同时外部磁场对 磁传感器保持等效。解决方案:在电流传感器中,包括:磁性物质芯2; 和磁传感器3.磁性体芯2包括:由芯末端21和弯曲部28构成的U形部22; 用于屏蔽U形部22内的内部中空部25的遮蔽部24; 以及设置在U形部的端部的内周侧的突出部23。 磁传感器3设置在面向突出部23的端面的间隙空间中。
    • 9. 发明专利
    • Magnetic field detection device, and manufacturing method thereof
    • 磁场检测装置及其制造方法
    • JP2008170368A
    • 2008-07-24
    • JP2007005776
    • 2007-01-15
    • Mitsubishi Electric Corp三菱電機株式会社
    • FURUKAWA TAISUKEKUROIWA TAKEHARUTOMOHISA SHINGOOSANAGA TAKASHITAKI MASAKAZUTAKADA YUTAKA
    • G01R33/09
    • PROBLEM TO BE SOLVED: To solve the problem wherein adjustment of a resistance value of a resistance part constituting a Wheatstone bridge circuit is difficult without damaging linearity or a temperature characteristic of an output to a detected magnetic field, in a magnetic field detection device equipped with the Wheatstone bridge circuit having a plurality of resistance parts using respectively a magnetic resistance effect element as a component.
      SOLUTION: This magnetic field detection device is equipped with the Wheatstone bridge circuit having the plurality of resistance parts, and at least one resistance part of the resistance parts is constituted of an element group formed by connecting a plurality of magnetic resistance effect elements in parallel.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题为了解决在构成惠斯通电桥电路的电阻部分的电阻值的调整困难而不损害对检测的磁场的输出的线性或温度特性的问题,则在磁场检测中 装备有惠斯通电桥电路的装置,其具有分别使用磁阻效应元件作为部件的多个电阻部件。 解决方案:该磁场检测装置配备有具有多个电阻部分的惠斯通电桥电路,电阻部分的至少一个电阻部分由通过连接多个磁阻效应元件形成的元件组构成 在平行下。 版权所有(C)2008,JPO&INPIT
    • 10. 发明专利
    • Magnetic sensor using magnetoresistive element
    • 磁传感器使用磁感应元件
    • JP2012107939A
    • 2012-06-07
    • JP2010256026
    • 2010-11-16
    • Mitsubishi Electric Corp三菱電機株式会社
    • TOMIZAWA ATSUSHINISHIKAWA KAZUYASUFURUKAWA TAISUKEOSANAGA TAKASHI
    • G01R33/09H03K17/95
    • PROBLEM TO BE SOLVED: To provide a semiconductor chip which can detect the continuous change of a magnetic field as a highly accurate digital value and can provide the value at low cost.SOLUTION: A magnetic sensor having an MR element comprises; an MR oscillator in which an oscillation period changes corresponding to the intensity of an external magnetic field; a fixed oscillator oscillating with a fixed oscillation period; and an integrator for counting a square wave output by the MR oscillator based on a reset signal output by the fixed oscillator and outputting the wave as a digital value. The MR oscillator, the fixed oscillator and the integrator of the magnetic sensor are formed into one semiconductor chip.
    • 要解决的问题:提供可以将磁场的连续变化作为高精度数字值检测的半导体芯片,并且可以以低成本提供该值。 具有MR元件的磁传感器包括: 其中振荡周期根据外部磁场的强度而变化的MR振荡器; 固定振荡器以固定的振荡周期振荡; 以及积分器,用于基于由固定振荡器输出的复位信号来计算由MR振荡器输出的方波,并将该波输出为数字值。 MR振荡器,固定振荡器和磁传感器的积分器形成一个半导体芯片。 版权所有(C)2012,JPO&INPIT