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1. 发明专利

JP2013084895A Substrate processing apparatus, substrate processing method and solar cell manufacturing method 审中-公开
标题翻译：基板加工装置，基板加工方法及太阳能电池制造方法
公开(公告)号：JP2013084895A
公开(公告)日：2013-05-09
申请号：JP2012116447
申请日：2012-05-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IMAMURA KEN , TSUDA MUTSUMI , ORITA YASUSHI , TOMOHISA SHINGO , SHINTANI KENJI
IPC分类号： H01L21/302 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To form an uneven shape on a surface of a glass substrate in a region except a marginal part.SOLUTION: A substrate processing apparatus comprises: an extension part 120 arranged so as to selectively cover a peripheral edge of a treatment surface of a substrate and extending from an inner wall on a gas supply part side in a vacuum vessel toward a substrate stage; a distance adjustment mechanism 20 which shortens, in substrate treatment, a distance between the peripheral edge of the treatment surface and the extension part so as to isolate a first space 101 surrounded by the gas supply part, the extension part and the treatment surface, and a second space 102 on an outer side of the first space from each other, and distances, in substrate exchange, the peripheral edge of the treatment surface of the substrate from the extension part; a first exhaust port 12 connected to a first exhaust system for reducing the pressure of the first space in the substrate treatment; and a second exhaust port 140 connected to a second exhaust system for reducing the pressure of the second space in the substrate treatment.
摘要翻译：要解决的问题：在除了边缘部分之外的区域中在玻璃基板的表面上形成不均匀的形状。解决方案：基板处理装置包括：延伸部分120，其布置成选择性地覆盖基板的处理表面的周边边缘并且从真空容器中的气体供应部分侧的内壁朝向基板阶段; 距离调节机构20，其在基板处理中缩短处理面的周缘与延伸部之间的距离，以隔离由气体供给部，延伸部和处理面包围的第一空间101，以及在所述第一空间的外侧的第二空间102和从所述延伸部到所述基板的处理面的周缘的基板交换的距离; 连接到第一排气系统的第一排气口12，用于减小基板处理中的第一空间的压力; 以及连接到第二排气系统的第二排气口140，用于降低基板处理中的第二空间的压力。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013071884A Glass substrate, and method for producing the same 审中-公开
标题翻译：玻璃基板及其制造方法
公开(公告)号：JP2013071884A
公开(公告)日：2013-04-22
申请号：JP2011214347
申请日：2011-09-29
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , ORITA YASUSHI , TSUDA MUTSUMI , YASHIKI YASUSATO , NAKAHATA TAKUMI
IPC分类号： C03B33/02 , C03C15/00 , H01L31/04
CPC分类号： Y02E10/50 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To obtain a glass substrate which is suitable for suppressing film exfoliation at a boundary portion between a chamfering portion and a main surface portion by improving fracture resistance at the chamfering portion.SOLUTION: This glass substrate, which is a glass substrate having a chamfering portion between a main surface portion and an end surface portion, includes a plurality of recessed parts formed at least on the end surface portion and the chamfering portion, wherein each of the plurality of recessed parts has a width in the plane direction of 10 to 200 nm.
摘要翻译：要解决的问题：通过提高倒角部分的抗断裂性，获得适合于抑制倒角部与主面部分之间的边界部分的剥离的玻璃基板。解决方案：作为在主表面部分和端面部分之间具有倒角部分的玻璃基板的玻璃基板包括至少形成在端面部分和倒角部分上的多个凹陷部分，其中每个多个凹部的平面方向的宽度为10〜200nm。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012114292A Thin film photoelectric conversion device and manufacturing method thereof 审中-公开
标题翻译：薄膜光电转换装置及其制造方法
公开(公告)号：JP2012114292A
公开(公告)日：2012-06-14
申请号：JP2010262770
申请日：2010-11-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , YASHIKI YASUSATO , YAMAGUCHI SHINSAKU
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To acquire a thin film photoelectric conversion device which prevents occurrence of current leakage to a connection part between a back electrode layer and a transparent electrode layer and which can be realized at low cost by a simple method, and a manufacturing method therefor.SOLUTION: In a first and a second cell adjacent to each other, a first electrode layer 102 of the first cell includes an extension part extending to the inside of a region overlapping a second electrode layer 104 of the second cell in a prescribed direction, and the second electrode layer 104 of the second cell includes a connection part which is buried penetrating a photoelectric conversion unit 103 of the second cell and which electrically connects the second electrode layer 104 on the photoelectric conversion unit 103 of the second cell and the extension part. The second cell includes a groove part 121 which is provided on a side of the connection part opposite to the first cell in a prescribed direction and which penetrates layers from a p-type semiconductor layer 103a of any photoelectric conversion unit through the first electrode layer 102, separating those layers in a prescribed direction, at least a side wall of the groove part 121 being covered with an i-type photoelectric conversion layer 103b.
摘要翻译：解决的问题：为了获得一种薄膜光电转换装置，其可以防止电流泄漏到背电极层和透明电极层之间的连接部分，并且可以通过简单的方法以低成本实现，以及其制造方法。解决方案：在彼此相邻的第一和第二单元中，第一单元的第一电极层102包括延伸部分，其延伸到与规定的第二单元格的第二电极层104的第二电极层104重叠的区域的内部方向，第二电池单元的第二电极层104包括连接部，该连接部穿过第二电池的光电转换单元103，并且将第二电池的光电转换单元103上的第二电极层104电连接到第二电池单元延伸部分。第二单元包括：沟槽部121，其设置在与第一单元相反的一侧的规定方向上，并且通过第一电极层102从任何光电转换单元的p型半导体层103a穿透层在规定的方向上分离这些层，槽部121的至少一个侧壁被i型光电转换层103b覆盖。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2008170368A Magnetic field detection device, and manufacturing method thereof 有权
标题翻译：磁场检测装置及其制造方法
公开(公告)号：JP2008170368A
公开(公告)日：2008-07-24
申请号：JP2007005776
申请日：2007-01-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA TAISUKE , KUROIWA TAKEHARU , TOMOHISA SHINGO , OSANAGA TAKASHI , TAKI MASAKAZU , TAKADA YUTAKA
IPC分类号： G01R33/09
摘要： PROBLEM TO BE SOLVED: To solve the problem wherein adjustment of a resistance value of a resistance part constituting a Wheatstone bridge circuit is difficult without damaging linearity or a temperature characteristic of an output to a detected magnetic field, in a magnetic field detection device equipped with the Wheatstone bridge circuit having a plurality of resistance parts using respectively a magnetic resistance effect element as a component.
SOLUTION: This magnetic field detection device is equipped with the Wheatstone bridge circuit having the plurality of resistance parts, and at least one resistance part of the resistance parts is constituted of an element group formed by connecting a plurality of magnetic resistance effect elements in parallel.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题为了解决在构成惠斯通电桥电路的电阻部分的电阻值的调整困难而不损害对检测的磁场的输出的线性或温度特性的问题，则在磁场检测中装备有惠斯通电桥电路的装置，其具有分别使用磁阻效应元件作为部件的多个电阻部件。解决方案：该磁场检测装置配备有具有多个电阻部分的惠斯通电桥电路，电阻部分的至少一个电阻部分由通过连接多个磁阻效应元件形成的元件组构成在平行下。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2003347401A Semiconductor device having multilayer wiring structure and its manufacturing method 审中-公开
标题翻译：具有多层布线结构的半导体器件及其制造方法
公开(公告)号：JP2003347401A
公开(公告)日：2003-12-05
申请号：JP2002156935
申请日：2002-05-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , TSUDA MUTSUMI , FUKADA TETSUO , TAKI MASAKAZU , SHINTANI KENJI
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L23/53295 , H01L23/5222 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a multilayer wiring struc ture allowing an improvement in the strength of a wiring layer to be compatible with an improvement in the transfer speed of signals and its manufacturing method. SOLUTION: A plurality of wiring layers 2 that are arranged at locations at the same height are laterally connected by a diffusion preventing insulation layer 4. The wiring layers 2 that are arranged at the locations at different heights are electrically connected in a longitudinal direction through plug parts 2a. A second interlayer film 5 is arranged only in a region right below the wiring layer 2, and connects the wiring layer 2 with the diffusion preventing insulation layer 4 in a longitudinal direction. On the side of each of the plurality of wiring layers 2, a hollow space 20 or an interlayer film 7 with a low dielectric constant of 2.5 or below are located. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种具有多层布线结构的半导体器件，其允许提高布线层的强度以与信号的传送速度的提高兼容，并且其制造方法。解决方案：布置在相同高度的位置的多个布线层2通过防扩散绝缘层4横向连接。布置在不同高度处的布线层2以纵向方式电连接方向穿过插头部分2a。第二层间膜5仅布置在布线层2的正下方的区域中，并且在纵向方向上将布线层2与扩散防止绝缘层4连接。在多个布线层2的一侧，设有中空空间20或介电常数为2.5以下的中间膜7。版权所有（C）2004，JPO

6. 发明专利

JP2013110377A Glass substrate processing apparatus, cleaning method of the same, and glass substrate processing method 审中-公开
标题翻译：玻璃基板加工设备，其清洁方法和玻璃基板处理方法
公开(公告)号：JP2013110377A
公开(公告)日：2013-06-06
申请号：JP2012086558
申请日：2012-04-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TSUDA MUTSUMI , SHINTANI KENJI , TOMOHISA SHINGO , TAKI MASAKAZU
IPC分类号： H01L21/3065 , H01L21/304 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To obtain a glass substrate processing apparatus which washes a deposition film and particles, which adhere to a chamber inner wall and are composed of fluoride of alkali elements, more easily compared to a conventional substrate processing apparatus when a glass substrate is etched using an HF gas.SOLUTION: A glass substrate processing apparatus comprises: a vacuum chamber 11; a substrate stage 12 holding a glass substrate 100 in the vacuum chamber 11; a gas supply mechanism 20 supplying a process gas, used for processing the glass substrate 100, to the vacuum chamber 11; and a gas shower head 13 which is disposed facing a substrate holding surface of the substrate stage 12 and discharges the process gas toward the substrate stage 12; exhaust means exhausting the gas in the vacuum chamber 11; a shower head 31 cleaning the vacuum chamber 11 with washing water 110; and a drain water mechanism 40 which drains the washing water 110 accumulated in the vacuum chamber 11.
摘要翻译：解决方案：为了获得一种玻璃基板处理装置，其与常规基板处理装置相比更容易地洗涤沉积膜和附着到室内壁上并由碱金属元素的氟化物组成的颗粒，当使用HF气体蚀刻玻璃基板。玻璃基板处理装置包括：真空室11; 将玻璃基板100保持在真空室11内的基板台12; 将用于处理玻璃基板100的处理气体供给到真空室11的气体供给机构20; 以及气体喷头13，其布置成面对基板台12的基板保持表面，并将处理气体朝向基板台12排出; 排气装置排出真空室11中的气体; 用洗涤水110清洗真空室11的淋浴头31; 以及排水装置40，其排出积聚在真空室11中的洗涤水110.版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013057685A Magnetic field detection method 有权
标题翻译：磁场检测方法
公开(公告)号：JP2013057685A
公开(公告)日：2013-03-28
申请号：JP2012271344
申请日：2012-12-12
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUKAWA TAISUKE , KUROIWA TAKEHARU , TOMOHISA SHINGO , OSANAGA TAKASHI , TAKI MASAKAZU , TAKADA YUTAKA , ABE YUJI , AKIYAMA KOICHI
IPC分类号： G01R33/09 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic field detection method with high accuracy.SOLUTION: A magnetic field detection method for detecting an external magnetic field by using a tunnel magneto-resistance effect element 10 is provided. The magnetic field detection method includes a step of measuring an electric characteristic when applying a bias magnetic field Hb and an external magnetic field Hex which change the magnetization direction of a free layer 15 of the tunnel magneto-resistance effect element 10 at the same time or individually to the tunnel magneto-resistance effect element 10, and a step of calculating the external magnetic field on the basis of the electric characteristic of the tunnel magneto-resistance effect element 10 measured in response to the bias magnetic field Hb and the external magnetic field Hex.
摘要翻译：要解决的问题：提供高精度的磁场检测方法。解决方案：提供一种通过使用隧道磁阻效应元件10来检测外部磁场的磁场检测方法。磁场检测方法包括在施加偏置磁场Hb时测量电特性的步骤和同时改变隧道磁阻效应元件10的自由层15的磁化方向的外部磁场Hex，或单独地施加到隧道磁阻效应元件10，以及基于响应于偏置磁场Hb和外部磁场测量的隧道磁阻效应元件10的电特性来计算外部磁场的步骤十六进制。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012256776A Manufacturing method of thin-film photoelectric conversion device 审中-公开
标题翻译：薄膜光电转换装置的制造方法
公开(公告)号：JP2012256776A
公开(公告)日：2012-12-27
申请号：JP2011129844
申请日：2011-06-10
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , YASHIKI YASUSATO , YAMAGUCHI SHINSAKU
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film photoelectric conversion device capable of obtaining an excellent photoelectric conversion efficiency.SOLUTION: A manufacturing method of a thin-film photoelectric conversion device which laminates and forms a plurality of photoelectric conversion units including a photoelectric conversion layer which is composed of a semiconductor film and performs photoelectric conversion between a first electrode layer composed of a conductive film and a second electrode layer composed of a transparent conductive film comprises a step of forming a first photoelectric conversion unit of a first electrode layer side among the plural photoelectric conversion units and a step of forming a second photoelectric conversion unit of a second electrode layer side among the plural photoelectric conversion units. The step of forming the first photoelectric conversion unit forms a first concave-convex shape on a surface of the first electrode layer side and forms a second concave-convex shape having a concave-convex level difference smaller than the first concave-convex shape or a short concave-convex pitch on a surface of the second electrode layer side. The step of forming the second photoelectric conversion unit forms a concave-convex shape in which the second concave-convex shape was reflected on the surface of the second electrode layer side and forms a photoelectric conversion layer composed of a material whose absorption wavelength is shorter than a photoelectric conversion layer of the first photoelectric conversion unit.
摘要翻译：要解决的问题：提供能够获得优异的光电转换效率的薄膜光电转换装置的制造方法。解决方案：一种薄膜光电转换装置的制造方法，其层压并形成包括由半导体膜构成的光电转换层的多个光电转换单元，并在由第一电极层导电膜和由透明导电膜构成的第二电极层包括在多个光电转换单元之间形成第一电极层侧的第一光电转换单元的步骤和形成第二电极层的第二光电转换单元的步骤在多个光电转换单元之间。形成第一光电转换单元的步骤在第一电极层侧的表面上形成第一凹凸形状，并且形成具有小于第一凹凸形状的凹凸级别差的第二凹凸形状或在第二电极层侧的表面上具有短凹凸距离。形成第二光电转换单元的步骤形成凹凸形状，其中第二凹凸形状在第二电极层侧的表面上被反射，并形成由吸收波长短于第一光电转换单元的光电转换层。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2010016087A Magneto-resistance effect device 审中-公开
标题翻译：磁阻效应器件
公开(公告)号：JP2010016087A
公开(公告)日：2010-01-21
申请号：JP2008173281
申请日：2008-07-02
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , FURUKAWA TAISUKE , KUROIWA TAKEHARU
IPC分类号： H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnet-resistance effect device having a low resistive contact. SOLUTION: A contact layer 5 is formed on a substrate 1. An anchoring layer 6 is formed on the contact layer 5 and has a fixed magnetization direction. A tunnel insulating layer 7 is formed on the anchoring layer 6. A free layer 8 is formed on the tunnel insulating layer 7 and has a magnetization direction which changes by an external applied magnetic field. A contact plug 15 has the base coming into contact with only the contact layer 5. COPYRIGHT: (C)2010,JPO&INPIT

10. 发明专利

JP2007258009A Manufacturing method of electric field electron emitting device 有权
标题翻译：电场发射装置的制造方法
公开(公告)号：JP2007258009A
公开(公告)日：2007-10-04
申请号：JP2006081152
申请日：2006-03-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TOMOHISA SHINGO , TARUYA MASAYOSHI
IPC分类号： H01J9/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of an electric field electron emitting device in which an emitter layer can be exposed without being damaged. SOLUTION: A buffer layer 4 of two kinds or more of materials which are different in an etching speed in a prescribed etching condition is formed on the emitter layer 3. Next, an interlayer insulating layer 5 is formed so as to cover the main surface of the substrate 1, a cathode electrode layer 2, the emitter layer 3, and the buffer layer 4. Afterwards, after forming a through hole 102 to penetrate through the interlayer insulating layer 5, etching is applied on the buffer layer 4 so that a residual material 103 containing at least one kind of material out of two kinds or more of materials will remain. Next, the residual material 103 is peeled off from the emitter layer 3. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种电场电子发射器件的制造方法，其中发射极层可以暴露而不被损坏。解决方案：在发射极层3上形成有在规定蚀刻条件下蚀刻速度不同的两种或更多种材料的缓冲层4.接下来，形成层间绝缘层5，以覆盖基板1的主表面，阴极电极层2，发射极层3和缓冲层4.之后，在形成穿透层间绝缘层5的通孔102之后，在缓冲层4上施加蚀刻将残留包含两种或更多种材料中的至少一种材料的残留材料103。接下来，残留材料103从发射极层3剥离。版权所有（C）2008，JPO＆INPIT

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