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1. 发明专利

JP2004153628A Device, method and program for modulation, device, method and program for demodulation, modulation and demodulation system, computer readable recording medium recorded with modulation program, and computer readable recording medium recorded with modulation program 有权
标题翻译：用于调制，调制和解调系统的装置，方法和程序，装置，方法和程序，用调制程序记录的计算机可读记录介质和与调制程序记录的计算机可读记录介质
公开(公告)号：JP2004153628A
公开(公告)日：2004-05-27
申请号：JP2002317489
申请日：2002-10-31
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAZAKI TAKUYA , FUJIWARA NOBUO
IPC分类号： H04L27/34 , H04L27/38
CPC分类号： H04L27/38 , H04L27/3405
摘要： PROBLEM TO BE SOLVED: To lower an error rate about symbols with a repetition bit mapped thereto. SOLUTION: When a coding processing part 12 of a multivalued modulation device 1 maps the repetition bit to transmission bit, the error rate can be lowered because the symbols including the repetition bit can be arranged at a signal point at four corners on a signal arrangement figure by mapping the repetition bit to a particular bit position of the symbols as a result of dividing the mapped transmission data into a plurality of symbols. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：降低与映射到其的重复位相关的符号的错误率。解决方案：当多值调制装置1的编码处理部分12将重复比特映射到传输比特时，可以降低错误率，因为包括重复比特的符号可以被布置在信号点上的四个角上通过将重复位映射到符号的特定比特位置，作为将映射的发送数据划分为多个符号的结果的信号布置图。版权所有（C）2004，JPO

2. 发明专利

JP2012174736A Plasma deposition apparatus and plasma deposition method 有权
标题翻译：等离子体沉积装置和等离子体沉积方法
公开(公告)号：JP2012174736A
公开(公告)日：2012-09-10
申请号：JP2011032520
申请日：2011-02-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKI MASAKAZU , IKEDA TOMOHIRO , TSUDA MUTSUMI , IMAMURA KEN , FUJIWARA NOBUO
IPC分类号： H01L21/205 , C23C16/515 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma deposition apparatus and a plasma deposition method that are capable of generating a uniform plasma even when a substrate to be processed having a large area is processed by supplying high frequency power in VHF band.SOLUTION: The plasma deposition apparatus includes a deposition chamber formed by a vacuum chamber and a first electrode. In the deposition chamber, a substrate to be deposited is placed on a second electrode disposed opposing the first electrode. Plasma is generated between the first and second electrodes, and is used to perform deposition. On the opposite side of a first main surface of the first electrode which opposes the second electrode, a second main surface has plural feeding points. Each of the feeding points is fed with pulse-modulated high frequency power. Pulses in the high frequency power have first power in a first period during an ON time, and has second power in a second period following the first period during the ON time, in which the first power is higher than the second power by 5 percent or greater.
摘要翻译：要解决的问题：提供即使当通过在VHF频带中提供高频功率来处理具有大面积的待处理衬底时，也能够产生均匀等离子体的等离子体沉积设备和等离子体沉积方法。解决方案：等离子体沉积设备包括由真空室和第一电极形成的沉积室。在沉积室中，待沉积的衬底被放置在与第一电极相对设置的第二电极上。在第一和第二电极之间产生等离子体，并用于进行沉积。在与第二电极相对的第一电极的第一主表面的相对侧上，第二主表面具有多个馈电点。每个馈电点都馈送有脉冲调制的高频功率。高频功率的脉冲在接通时间期间在第一时段内具有第一功率，并且在接通时间的第一周期之后的第二周期中具有第二功率，其中第一功率高于第二功率百分之五，或者更大。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012174668A High-frequency power supply device, plasma processing apparatus, and method for manufacturing semiconductor thin film 审中-公开
标题翻译：高频电源装置，等离子体处理装置及制造半导体薄膜的方法
公开(公告)号：JP2012174668A
公开(公告)日：2012-09-10
申请号：JP2011038868
申请日：2011-02-24
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IKEDA TOMOHIRO , TAKI MASAKAZU , TSUDA MUTSUMI , FUJIWARA NOBUO
IPC分类号： H05H1/46 , C23C16/24 , C23C16/509 , H01L21/205 , H01L21/31 , H03F3/20
摘要： PROBLEM TO BE SOLVED: To obtain a high-frequency power supply device and a plasma processing apparatus which are capable of improving power utilization efficiency, and to obtain a method for manufacturing a semiconductor thin film.SOLUTION: The high-frequency power supply device for supplying high-frequency power to a fluctuating load comprises: a high-frequency power source; a circulator which is disposed between the high-frequency power source and the fluctuating load and separates reflected power received from the fluctuating load; an adjustment unit for adjusting a phase and an amplitude of the reflected power separated by the circulator; a power combining unit which combines power outputted from the high-frequency power source with the reflected power adjusted by the adjustment unit and outputs combined power to the circulator.
摘要翻译：要解决的问题：获得能够提高功率利用效率的高频电源装置和等离子体处理装置，并获得制造半导体薄膜的方法。解决方案：用于向波动负载提供高频功率的高频电源装置包括：高频电源; 设置在高频电源和波动负载之间的循环器，分离从波动负载接收的反射功率; 调节单元，用于调节由循环器分离的反射功率的相位和幅度; 功率合成单元，其将从高频电源输出的功率与由调整单元调整的反射功率组合，并将组合的功率输出到循环器。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2005057582A Transmission device 有权
标题翻译：传输设备
公开(公告)号：JP2005057582A
公开(公告)日：2005-03-03
申请号：JP2003287776
申请日：2003-08-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FUJIWARA NOBUO
IPC分类号： H04B1/04 , H04B1/707 , H04J13/00 , H04W72/04 , H04W88/08 , H04Q7/38
CPC分类号： Y02D70/00 , Y02D70/25 , Y02D70/40
摘要： PROBLEM TO BE SOLVED: To provide an inexpensive transmission device in which deterioration of S/N due to reduction of a peak factor is suppressed.
SOLUTION: A channel coding processing part 11 outputs symbol position information being an object of a processing when a channel coding processing is performed on transmission data and a radio frame is generated. A data flow management part 17 specifies a symbol position of a multiplex transmission signal, which is level-adjusted in a peak factor reduction processing part 50 based on symbol position information, and adds amplitude equivalent to correction power quantity to data positioned nearest to data in the symbol position of the multiplex transmission signal specified when an error correction coding processing is performed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种廉价的传输装置，其中抑制了由于峰值因子的降低导致的S / N的劣化。解决方案：信道编码处理部分11输出作为在对发送数据进行信道编码处理和生成无线帧时的处理对象的符号位置信息。数据流管理部分17指定基于符号位置信息在峰值因子减少处理部分50中进行电平调整的多路复用传输信号的符号位置，并将相当于校正功率量的幅度添加到最靠近数据位置的数据当进行纠错编码处理时指定的多路传输信号的符号位置。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2003037644A Equipment and method for data communication 审中-公开
标题翻译：用于数据通信的设备和方法
公开(公告)号：JP2003037644A
公开(公告)日：2003-02-07
申请号：JP2001225583
申请日：2001-07-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： DAN KEISHO , TAKANO MICHIAKI , SUZUKI KUNIYUKI , YAMAZAKI TAKUYA , ABE MINORU , FUJIWARA NOBUO , YAMAGUCHI JIYUNSEI
IPC分类号： H04L27/36 , H04L27/00 , H04L29/02
摘要： PROBLEM TO BE SOLVED: To reduce transmitting power of a symbol containing DTX bits. SOLUTION: After secondary interleaving is applied to the information data by a secondary interleaving part 143, on the basis of the number of bits in the symbol, the number of bits comprising a DTX block, data contents and an inserting position are determined by a dummy bit determining part 144 and according to its determination, the DTX block composed of the bits of the determined number is generated with the determined data contents by a dummy bit inserting part 145. Then, each of generated DTX blocks is inserted into the information data at the determined position. Thus, the symbol containing the DTX block is mapped in the area within a fixed range from an origin in a signal point constellation.
摘要翻译：要解决的问题：减少包含DTX位的码元的发送功率。解决方案：通过二次交织部分143对二次交织应用于信息数据后，基于符号中的比特数，包括DTX块，数据内容和插入位置的比特数由虚拟比特确定部分144，并且根据其确定，通过伪比特插入部分145与所确定的数据内容一起生成由确定的号码的比特组成的DTX块。然后，每个生成的DTX块被插入到信息数据中确定的位置。因此，包含DTX块的符号被映射在信号点星座中的原点的固定范围内的区域中。

6. 发明专利

JP2014207326A 半導体装置および半導体装置の製造方法有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2014207326A
公开(公告)日：2014-10-30
申请号：JP2013084000
申请日：2013-04-12
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： FUJIWARA NOBUO , KAGAWA YASUHIRO , TANAKA RINA , FUKUI YUTAKA
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12 , H01L29/41
摘要：【課題】トレンチ底部の角部における電界集中を緩和することができる半導体装置を提供する。【解決手段】ワイドバンドギャップ半導体からなる半導体基板と、半導体基板上に形成された第一導電型のドリフト層と、ドリフト層の上部に形成された第二導電型のベース領域と、ベース領域内の上部に形成された第一導電型のソース領域と、ベース領域とソース領域とを貫通しドリフト層に達するよう形成された第一トレンチ部と第一トレンチ部直下のドリフト層に形成され第一トレンチ部の幅よりも幅が狭い第二トレンチ部とから構成されたトレンチと、第一トレンチ部及び第二トレンチ部に沿ってトレンチ内の側面及び底面に形成されたゲート絶縁膜と、ゲート絶縁膜が形成されたトレンチの内部に埋没するゲート電極と、トレンチの第一トレンチ部及び第二トレンチ部直下におけるドリフト層に形成された第二導電型の保護層とを備えた半導体装置とする。【選択図】図1
摘要翻译：要解决的问题：提供一种可以缓和沟槽底部角落处的电场浓度的半导体器件。解决方案：半导体器件包括：由宽带隙半导体构成的半导体衬底; 形成在所述半导体基板上的第一导电型漂移层; 形成在漂移层上的第二导电型基极区; 形成在上部的基部区域中的第一导电型源极区域; 由形成为穿透所述基极区域的第一沟槽部分和所述源极区域到达所述漂移层构成的沟槽，以及形成在所述第一沟槽部分的正下方的所述漂移层中的第二沟槽部，其宽度比第一沟槽部分的宽度; 形成在侧面和底面上并且沿着第一沟槽部分和第二沟槽部分的栅极绝缘膜; 埋置在沟槽内的形成栅极绝缘膜的栅电极; 以及形成在沟槽的第一沟槽部分和第二沟槽部分正下方的漂移层中的第二导电型保护层。

7. 发明专利

JP2012104559A Device and method for plasma deposition 审中-公开
标题翻译：用于等离子体沉积的装置和方法
公开(公告)号：JP2012104559A
公开(公告)日：2012-05-31
申请号：JP2010249908
申请日：2010-11-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKI MASAKAZU , IKEDA TOMOHIRO , TSUDA MUTSUMI , IMAMURA KEN , FUJIWARA NOBUO , TAWARA YUKIHIRO , FUKAZAWA TORU , HIROTA AKEMICHI , YONEDA NAOFUMI
IPC分类号： H01L21/205 , C23C16/509 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To obtain uniform plasma even when a substrate to be processed having a large area is processed by supply of VHF-band high-frequency power.SOLUTION: In a plasma deposition device, a second principal plane of a first electrode includes a plurality of first feeding points, a plurality of second feeding points, at least a third feeding point and at least a fourth feeding point. The plurality of first feeding points and the plurality of second feeding points are disposed in symmetric positions relative to a symmetry point, and in symmetric positions relative to a symmetry axis, and the high-frequency power fed thereto mutually has a 180-degree phase difference. The at least one third feeding point and the at least one fourth feeding point include a set of feeding points disposed in either positions having an equal distance from the symmetry point and positions on the symmetry axis, or positions having an equal distance from the symmetry point and in symmetric positions relative to the symmetry axis.
摘要翻译：要解决的问题：即使通过提供VHF频带高频电源来处理具有大面积的待处理衬底，也能获得均匀的等离子体。解决方案：在等离子体沉积装置中，第一电极的第二主平面包括多个第一馈电点，多个第二馈电点，至少第三馈电点和至少第四馈电点。多个第一馈电点和多个第二馈电点相对于对称点设置在对称位置，并且相对于对称轴位于对称位置，并且相互馈送的高频电力具有180度的相位差。所述至少一个第三馈电点和所述至少一个第四馈电点包括一组馈送点，所述馈送点设置在距所述对称点相等距离和所述对称轴上的位置的任一位置，或者与所述对称点具有相等距离的位置并且在相对于对称轴的对称位置。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2003008553A Transmitter, receiver, transmitter-receiver and communication system 审中-公开
标题翻译：发射机，接收机，发射机 - 接收机和通信系统
公开(公告)号：JP2003008553A
公开(公告)日：2003-01-10
申请号：JP2001189536
申请日：2001-06-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAGUCHI JIYUNSEI , ABE MINORU , TAKANO MICHIAKI , SUZUKI KUNIYUKI , DAN KEISHO , FUJIWARA NOBUO , YAMAZAKI TAKUYA
IPC分类号： H04L1/16 , H04L1/00 , H04L1/18 , H04Q7/38
CPC分类号： H04L1/1887 , H04L1/0009 , H04L1/0025 , H04L1/0026 , H04L1/1671 , H04L1/1816 , H04L1/1845 , H04L1/1874
摘要： PROBLEM TO BE SOLVED: To provide a transmitter that maintains a high transmission efficiency and suppresses a delay time from being increased and to provide a receiver, a transmitter-receiver and a communication system. SOLUTION: A buffer/transmission data division section 10 of a transmitter 1 in the communication system divides a transmission data packet into a plurality of blocks, an error detection coding section 11 attaches an error detection code to each block division, a transmission section 13 transmits each block with the error detection code attached thereto, and also re-transmits the block designated by re-transmission information from a receiver 2. A reception section 15 of the receiver 2 receives the block from the transmitter 1, an error detection section 17 detects the error of the received block, an ARQ (Automatic Repeat Request) control information generating section 42 generates information with respect to repeat transmission of the block depending on the result of detection, a buffer/reception data assembling section 18 combines a plurality of the blocks to restore the data packet. Through the configuration above, the transmitter can improve the transmission efficiency.
摘要翻译：要解决的问题：提供一种保持高传输效率并抑制延迟时间增加并且提供接收机，发射机 - 接收机和通信系统的发射机。解决方案：通信系统中的发送机1的缓冲/发送数据分割部分10将发送数据分组划分成多个块，错误检测编码部分11将错误检测码附加到每个分组，发送部分13发送每个块附有错误检测码，并且还从接收机2重新发送由重传信息指定的块。接收机2的接收部分15从发射机1接收该块，错误检测部分17检测接收块的错误，ARQ（自动重传请求）控制信息生成部42根据检测结果生成关于块的重复发送的信息，缓冲器/接收数据组合部18将多个块恢复数据包。通过上述配置，发射机可以提高传输效率。

9. 发明专利

JPH11233628A MANUFACTURE OF CONTACT STRUCTURE 失效
公开(公告)号：JPH11233628A
公开(公告)日：1999-08-27
申请号：JP3292598
申请日：1998-02-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUKAO TETSUHIRO , KUSUMI YOSHIHIRO , MIYATAKE HIROSHI , FUJIWARA NOBUO , SAKAMORI SHIGENORI , IIDA SATOSHI
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit and its manufacture, which prevent the contact part between a conductor part and a wire from corroding for the wiring of borderless structure. SOLUTION: An interlayer insulating film 300 having a wire-embedded hole is formed and a conductor 400 is charged in the wire-embedded hole. Then a wiring layer 500 covering the wire-embedded hole is formed on the interlayer insulating film 300, and resist 540 is used to form the wiring layer 500 in borderless structure. A barrier metal layer 510 suppresses the corrosion of the contact surface between the conductor 400 and the wiring layer 500.

10. 发明专利

JPH0969525A TREATMENT OF METALLIZATION 失效
公开(公告)号：JPH0969525A
公开(公告)日：1997-03-11
申请号：JP22344595
申请日：1995-08-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： KUSUMI YOSHIHIRO , FUJIWARA NOBUO , IIDA SATOSHI
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To obtain a method for treating a metallization in which the margin for corrosion can be increased. SOLUTION: A heating sample stage 15 is held at 200 deg.C and steam is introduced through a gas introduction port 19 while evacuating through an evacuation port 18 thus sustaining a specified gas pressure in a pressure reduction heating chamber 14. Upon elapse of a specified holding time, the pressure reduction heating chamber 14 is evacuated and an object 9 is carried by a vacuum carrying system 20 to a specified position on a cooling sample stage 22 in a cooling chamber 21. Subsequently, dry air or nitrogen is introduced through a gas introduction port 24 and the object 9 is held under a state of normal pressure until it is cooled down to normal temperature.

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