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1. 发明专利

JP2006093720A Liquid source formation of thin film using hexamethyldisilazane 审中-公开
标题翻译：液体源使用十五烷基硅烷形成薄膜
公开(公告)号：JP2006093720A
公开(公告)日：2006-04-06
申请号：JP2005290599
申请日：2005-10-03
申请人： Matsushita Electric Ind Co Ltd , Symmetrics Corp , シメトリックス・コーポレーションSymetrix Corporation , 松下電器産業株式会社
发明人： DERBENWICK GARY F , LARRY D MACMILLEN , SOLAYAPPAN NARAYAN , SCOTT MICHAEL C , PAZ DE ARAUJO CARLOS A , HAYASHI SHINICHIRO
IPC分类号： H01L21/316 , C01B33/12 , C23C18/12 , H01L21/314 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： PROBLEM TO BE SOLVED: To manufacture a thin film of metal oxide, having thickness and quality suitable for use in an integrated circuit. SOLUTION: Precursor liquid, containing several metals 2-ethylhexanoate, such as strontium, tantalum and bismuth 2-ethylhexanoate in xylene/methyl ethyl solvent, is adjusted, and substrates (5, 858) are arranged in a vacuum deposition chamber (2); a small quantity of hexamethyldisilazane is added to the precursor liquid; the precursor liquid thus adjusted is sprayed; and spray is made to flow into the chamber and a layer of the precursor liquid is deposited on the substrates. The liquid is dried, sintered, and annealed, and a thin film (506, 860) of a ferroelectric layer super-lattice material, such as strontium bismuth tantalite is formed on the substrate. Next, integrated circuits (600, 850) are completed, and at least a part of the ferroelectric layer super-lattice material film is included in constituent elements (604, 872) of the integrated circuits. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：制造具有适合用于集成电路的厚度和质量的金属氧化物薄膜。
解决方案：调节在二甲苯/甲基乙基溶剂中含有多种金属2-乙基己酸酯如锶，钽和铋2-乙基己酸酯的前体液体，将基材（5,858）排列在真空沉积室 2）; 向前体液中加入少量六甲基二硅氮烷; 将如此调节的前体液体喷雾; 并使喷雾流入室中，并且将一层前体液体沉积在基底上。将液体干燥，烧结和退火，并且在基板上形成铁电层超晶格材料（例如钽酸锶钽矿）的薄膜（506,860）。接下来，完成集成电路（600,850），并且铁电层超晶格材料膜的至少一部分被包含在集成电路的组成元件（604,872）中。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008270407A Semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：JP2008270407A
公开(公告)日：2008-11-06
申请号：JP2007109162
申请日：2007-04-18
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HOTTA TAKASHI , HAYASHI SHINICHIRO
IPC分类号： H01L21/822 , H01L21/285 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To suppress the electrostatic destruction of an insulating film in a semiconductor device having an MIM capacity structure.
SOLUTION: A conductive film for a lower electrode is formed on the insulating film arranged in a semiconductor substrate. A capacity insulating film is formed on the conductive film for the lower electrode. The semiconductor substrate and a conductive film formation stage are mutually brought into contact with each other in a non-pressure bonding state, so as to form a first conductive film for an upper electrode is formed on the capacity insulating film. The semiconductor substrate and the conductive film formation stage are mutually brought into contact in a pressure bonding state, so as to form a second conductive film for the upper electrode on the first conductive film for the upper electrode.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：抑制具有MIM容量结构的半导体器件中的绝缘膜的静电破坏。解决方案：在布置在半导体衬底中的绝缘膜上形成用于下电极的导电膜。在下电极用导电膜上形成电容绝缘膜。半导体基板和导电膜形成台在非压接状态下相互接触，从而在电容绝缘膜上形成用于上电极的第一导电膜。半导体衬底和导电膜形成级在压接状态下相互接触，从而在第一上电极用导电膜上形成用于上电极的第二导电膜。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007281525A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2007281525A
公开(公告)日：2007-10-25
申请号：JP2007188321
申请日：2007-07-19
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： YANO TAKASHI , HAYASHI SHINICHIRO
IPC分类号： H01L21/8246 , C23C16/40 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To prevent inhomogeneous composition of a ferrodielectric film in a film thickness direction in a ferrodielectric film capacitor to realize a capacitor having favorable electrical characteristics. SOLUTION: In a method of manufacturing a semiconductor device, a bottom electrode is formed on a semiconductor substrate (S51). Next, a first ferrodielectric film is formed on the bottom electrode by a CVD method using a first material gas (S53a). Next, a second ferrodielectric film is formed on the first ferrodielectric film by the CVD method using a second material gas (S53b). Next, an upper electrode is formed on the second ferrodielectric film. (S54)Here, the concentration of oxygen included in the first material gas used in the process (S53a) for forming the first ferrodielectric film is higher than that included in the second material gas used in the process (S53b) for forming the second ferrodielectric film. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了防止铁电介质膜电容器中的薄膜厚度方向上的铁电体组成不均匀，以实现具有良好的电特性的电容器。解决方案：在制造半导体器件的方法中，在半导体衬底上形成底电极（S51）。接下来，通过使用第一原料气体的CVD法（S53a）在底部电极上形成第一铁电体膜。接下来，通过使用第二原料气体的CVD法在第一铁电体膜上形成第二铁电体膜（S53b）。接下来，在第二铁电体膜上形成上电极。（S54）这里，用于形成第一铁电体膜的方法（S53a）中使用的第一原料气体中所含的氧浓度高于用于形成第二铁电体的方法（S53b）中使用的第二材料气体中包含的氧浓度电影。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2007189018A Capacitance insulating film and its production process, and capacitive element and its fabrication process 审中-公开
标题翻译：电容绝缘膜及其制造工艺及电容元件及其制造工艺
公开(公告)号：JP2007189018A
公开(公告)日：2007-07-26
申请号：JP2006005076
申请日：2006-01-12
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HAYASHI SHINICHIRO
IPC分类号： H01L21/8246 , H01L21/316 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To form a ferroelectric film having excellent orientation property to the (103) face on an electrode.
SOLUTION: In the production process of a capacitive insulating film, a capacitive insulating film (6) composed of a ferroelectric film having a bismuth layer perovskite type structure is formed on an electrode (4) composed of a noble metal oriented to the (1 1 1) face. More specifically, the capacitive insulating film (6) is formed using metal organic vapor phase epitaxy under second temperature (590°C or above) higher than a first temperature at which the crystal phase of the ferroelectric film undergoes phase transition from fluorite phase to perovskite phase.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：形成与电极上的（103）面的取向性优异的铁电体膜。解决方案：在电容绝缘膜的制造过程中，在由以贵金属取向的电极（4）上形成由具有铋层钙钛矿型结构的铁电体膜构成的电容绝缘膜（6）（1 1 1）面。更具体地说，电容绝缘膜（6）使用比第一温度高的第二温度（590℃或更高）时的金属有机气相外延形成，其中铁电薄膜的晶相从萤石相经历相变到钙钛矿相。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007184442A Ferroelectric capacitor 审中-公开
标题翻译：电磁电容器
公开(公告)号：JP2007184442A
公开(公告)日：2007-07-19
申请号：JP2006002121
申请日：2006-01-10
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HAYASHI SHINICHIRO
IPC分类号： H01L21/8246 , H01L27/105
CPC分类号： H01L28/75 , H01L27/11507 , H01L28/56 , H01L28/65
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor that has improved polarization inversion characteristics and can be operated stably.
SOLUTION: The ferroelectric capacitor comprises a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film. When the variation of the composition profile of an element for composing the ferroelectric film is 50% or smaller in the film thickness direction of the ferroelectric film, the polarization inversion time of the ferroelectric film is 1 μs or smaller.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有改善的极化反转特性并且可以稳定地操作的铁电电容器。
解决方案：铁电电容器包括下电极，形成在下电极上的铁电膜和形成在铁电体膜上的上电极。当用于构成铁电体膜的元件的组成轮廓的变化在铁电体膜的膜厚度方向上为50％以下时，铁电体膜的极化反转时间为1μs以下。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006261579A Capacitive element, method of manufacturing the same and semiconductor memory device comprising the same 审中-公开
标题翻译：电容元件及其制造方法和包含其的半导体存储器件
公开(公告)号：JP2006261579A
公开(公告)日：2006-09-28
申请号：JP2005080197
申请日：2005-03-18
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NASU TORU , HAYASHI SHINICHIRO , MIKAWA TAKUMI
IPC分类号： H01L27/105 , H01L21/8246
摘要： PROBLEM TO BE SOLVED: To suppress increase in a leak current, deterioration of pressure resistance, film fatigue and occurrence of imprinting regarding a ferroelectric film while suppressing increase in the resistance of a lower electrode, in a capacitive element comprising the lower electrode constituted of a platinum group metal oxide film and a capacitive film constituted of the ferroelectric film.
SOLUTION: A capacitive element 115 comprises a lower electrode 112, a capacitive film 113 formed on the lower electrode 112, and an upper electrode 114 formed on the capacitive film 113. The lower electrode 112 includes a crystal phase constituted of a first oxide, and an amorphous phase constituted of a second oxide. The first oxide contains at least one kind of platinum group metal oxide, and free energy of formation of the second oxide is smaller than free energy of formation of the first oxide.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在包括下电极的电容元件中，抑制泄漏电流的增加，耐压性的恶化，耐压性降低，并且在抑制下电极的电阻的增加的同时，在铁电体膜上产生压印由铂族金属氧化物膜和由铁电体膜构成的电容膜构成。解决方案：电容元件115包括下电极112，形成在下电极112上的电容膜113和形成在电容膜113上的上电极114.下电极112包括由第一氧化物和由第二氧化物构成的非晶相。第一氧化物含有至少一种铂族金属氧化物，第二氧化物的形成自由能小于形成第一氧化物的自由能。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006032979A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2006032979A
公开(公告)日：2006-02-02
申请号：JP2005225693
申请日：2005-08-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TATSUNARI TOSHITAKA , HAYASHI SHINICHIRO
IPC分类号： H01L27/105 , H01L21/316 , H01L21/8246
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device superior in the level difference covering characteristics of a ferroelectric film. SOLUTION: This semiconductor device is provided with a electrode 9, formed on a substrate and having a concavity or a convex section on its surface, and the ferroelectric film 10 containing Sr, Bi and Ta, or Bi, La, and Ti, formed on the electrode 9. The level difference coverage of the ferroelectric film in the level difference, existing in the concavity or the convex section, is 80% or higher. The dispersion in the composition ratio of metallic elements constituting the ferroelectric film is ±15% or smaller. Plural kinds of source gases which constitutes a material gas and in which each contains an organometallic compound are introduced into a chamber, and by chemically reacting main components in the plural kinds of source gases with each other in reaction rate-controlling, the ferroelectric film is deposited on a surface of the electrode. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供在铁电体膜的电平差覆盖特性方面优异的半导体器件。解决方案：该半导体器件设置有形成在基板上并在其表面上具有凹部或凸部的电极9，并且含有Sr，Bi和Ta或Bi，La和Ti的铁电体膜10 形成在电极9上。存在于凹部或凸部的电平差的铁电体膜的电平差覆盖率为80％以上。构成铁电体膜的金属元素的组成比的偏差为±15％以下。将构成原料气体的多种源气体，各自含有有机金属化合物的多种物质引入室内，通过使反应速度控制中的多种源气体中的主要成分彼此化学反应，将铁电体膜沉积在电极的表面上。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2003273330A Method for manufacturing capacity device 审中-公开
公开(公告)号：JP2003273330A
公开(公告)日：2003-09-26
申请号：JP2002071509
申请日：2002-03-15
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NAGANO YOSHIHISA , HAYASHI SHINICHIRO , SOSHIRO YUUJI
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/02 , H01L21/3213 , H01L21/8242 , H01L21/8246 , H01L27/105
CPC分类号： H01L21/02071 , H01L28/55 , H01L28/60 , H01L28/65
摘要： PROBLEM TO BE SOLVED: To prevent deterioration of characteristics of a capacity insulating film by preventing production of impurities at an interface between a lower electrode and the capacity insulating film.
SOLUTION: After depositing a first TiAlN film 11, a conductive film 12 and a second TiAlN film 13 on a supporting substrate 10, the second TiAlN film 13 is etched by using a resist pattern 14 as a mask to form a hard mask 13A. The conductive film 12 is subjected to etching by using an etching gas containing chlorine gas, and by using the hard mask 13A as a mask to form a patterned conductive film 12A. After that, the hard mask 13A and the first TiAlN film 11 are subjected to etching by using an etching gas containing chlorine for removing the hard mask 13A and forming a conductive barrier film 11A. The lower electrode 15 is irradiated with plasma composed of a gas containing fluorine for removing chlorine remaining on its surface.
COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2005203591A Capacitive element and method for manufacturing the same 有权
标题翻译：电容元件及其制造方法
公开(公告)号：JP2005203591A
公开(公告)日：2005-07-28
申请号：JP2004008904
申请日：2004-01-16
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NASU TORU , HAYASHI SHINICHIRO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To prevent bismuth from coming out of a capacitive film constituted of a bismuth layer-shaped structure ferroelectric film at the time of forming the capacitive film.
SOLUTION: This capacitive element is provided with a diffusion preventing layer 10a, a capacitive lower electrode 12 formed on the diffusion preventing layer 10a, a capacitive film 13 constituted of a ferroelectric having a bismuth layer-shaped structure formed on the capacitive lower electrode 12, and a capacitive upper electrode 14 formed on the capacitive film 13. The diffusion preventing layer 10a is constituted of materials where bismuth oxide is added to conductive metallic oxide.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2005039235A Method of forming ferroelectric film and semiconductor device 审中-公开
标题翻译：形成电磁膜和半导体器件的方法
公开(公告)号：JP2005039235A
公开(公告)日：2005-02-10
申请号：JP2004184108
申请日：2004-06-22
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TATSUNARI TOSHITAKA , HAYASHI SHINICHIRO
IPC分类号： C23C16/40 , H01L21/316 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To improve the step coverage of a ferroelectric film. SOLUTION: In a method of forming the ferroelectric film made of an insulating metal oxide on the surface of an electrode, which is formed on a substrate and has a concave or convex portion or is formed into a convex, two or more kinds of source gas are introduced into a chamber. The source gas constitutes material gas and contains an organic metallic compound. The main components of the two or more kinds of source gas are caused to chemically react at a reaction rate controlling, so that the ferroelectric film is deposited on the surface of the electrode. COPYRIGHT: (C)2005,JPO&NCIPI

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