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1. 发明专利

JP2006179508A Method for preventing degrading of nitride-based group iii-v compound semiconductor light-emitting device 审中-公开
标题翻译：用于防止氮化物III-V族化合物半导体发光器件降解的方法
公开(公告)号：JP2006179508A
公开(公告)日：2006-07-06
申请号：JP2003059926
申请日：2003-03-06
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ITO KEIJI , HASEGAWA YOSHITERU , YOKOGAWA TOSHIYA
IPC分类号： H01L33/32 , H01L33/62 , H01S5/02 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/32341 , H01L33/20 , H01L33/32 , H01S5/0224 , H01S5/2205 , H01S5/2231
摘要： PROBLEM TO BE SOLVED: To prevent degradation due to stress in a nitride-based group III-V compound semiconductor light-emitting device using a nitride-based group III-V compound semiconductor as a substrate, and to improve its service life.
SOLUTION: The method is used to prevent the degradation of a semiconductor light-emitting device using a nitride-based group III-V compound semiconductor as a substrate. In this case, the strain of each of multilayer structure layers grown on the substrate is controlled. In concrete, the substrate of the semiconductor light-emitting device is made to be 65-500 μm in thickness, and mounting temperature is set to between 190-260°C, and then the semiconductor light-emitting device is mounted by a junction-up method or junction-down method.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了防止使用氮化物系III-V族化合物半导体作为基板的氮化物系III-V族化合物半导体发光元件中由于应力引起的劣化，并提高使用寿命。解决方案：该方法用于防止使用基于氮化物的III-V族化合物半导体作为衬底的半导体发光器件的劣化。在这种情况下，控制在基板上生长的多层结构层的各应变。具体而言，将半导体发光元件的基板的厚度设为65〜500μm，将安装温度设定在190〜260℃之间，然后， up方法或结合方法。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005162526A Method for making gallium nitride crystal 审中-公开
标题翻译：制备氮化镓晶体的方法
公开(公告)号：JP2005162526A
公开(公告)日：2005-06-23
申请号：JP2003402601
申请日：2003-12-02
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： FUKUTO KENJI , YOKOGAWA TOSHIYA , KIDOGUCHI ISAO
IPC分类号： C30B29/38 , C23C16/34
摘要： PROBLEM TO BE SOLVED: To provide a method for making a gallium nitride crystal having any arbitrary facial orientation on the surface irrespectively of the orientation on a substrate surface.
SOLUTION: A plurality of rectangular parallelepipedal crystal masses 4 are cut from a GaN crystal 3 grown by a vapor phase epitaxy crystal growth method. On the other hand, a silicon oxide film 6 is applied to the surface of a separately prepared sapphire substrate 5. Next, a plurality of recesses 7 reaching the substrate 5 are formed in the silicon oxide film 6. The crystal masses 4 are embedded in the recesses 7 in a manner that the surface of each crystal mass 4 and the surface of the substrate 5 coated with the silicon oxide film 6 are on the substantially same level, and the upper surfaces have any desired same facial orientation. A gallium nitride crystal 8 having any desired arbitrary facial orientation on the surface is allowed to grow in a selective lateral direction by an epitaxial crystal growth method where the crystal masses 4 are used as seeds.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种用于制造在表面上具有任意面部取向的氮化镓晶体的方法，而不管衬底表面上的取向如何。解决方案：从通过气相外延晶体生长方法生长的GaN晶体3切割出多个长方体的晶体块4。另一方面，将氧化硅膜6施加到另外制备的蓝宝石衬底5的表面上。接下来，在氧化硅膜6中形成到达衬底5的多个凹槽7.将晶体块4嵌入凹部7以每个晶体块4的表面和涂覆有氧化硅膜6的基板5的表面处于基本相同的水平面上，并且上表面具有任何所需的相同面部取向。通过使用晶体块4作为种子的外延晶体生长法，允许在表面上具有任何所需任意面取向的氮化镓晶体8在选择性横向上生长。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004307304A Method for controlling solid and melt 审中-公开
公开(公告)号：JP2004307304A
公开(公告)日：2004-11-04
申请号：JP2003106387
申请日：2003-04-10
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： FUKUTO KENJI , ISHIBASHI AKIHIKO , YOKOGAWA TOSHIYA
IPC分类号： C30B29/38 , C30B11/00
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling a solid and a melt, by which it becomes possible to sufficiently melt solid GaN, to grow a large size bulk single crystal at high speed from a GaN melt or to manufacture an excellent p-type GaN crystal while sufficiently administrating temperature and pressure.
SOLUTION: The sample of the GaN melt formed by using a heater, YAG-laser, and an anvil or of solid GaN is enclosed in a high pressure anvil cell. Then, a single crystal is grown from the molten GaN by controlling phase change between the solid GaN and the molten GaN or states in the solid by using an invented temperature-pressure correlation diagram useful for determining melt-solid regions and their boundary for GaN.
COPYRIGHT: (C)2005,JPO&NCIPI

4. 发明专利

JP2004288954A Doped layer forming method 审中-公开
公开(公告)号：JP2004288954A
公开(公告)日：2004-10-14
申请号：JP2003080265
申请日：2003-03-24
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： FUKUTO KENJI , ISHIBASHI AKIHIKO , YOKOGAWA TOSHIYA
IPC分类号： H01L21/22 , H01L21/265 , H01L33/16 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a doped layer forming method that enables the formation of a p-type Wurtzite GaN crystal high in carrier concentration and excellent in crystallinity. SOLUTION: In this doped layer forming method, low-energy Mg ions are implanted into the surface of a Wurtzite GaN crystal from directly above, wherein a plane approximately vertical to the C-plane shows up as the surface, and then annealing is performed for the diffusion of the implanted Mg ions. A process follows wherein a crystal defect layer formed near the GaN crystal surface is removed by etching for the formation of a p-type Wurtzite GaN crystal sufficiently high in carrier concentration and excellent in crystallinity. By using this method, a p-type Wurtzite GaN crystal is formed, sufficiently high in carrier concentration and excellent in crystallinity. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2003273130A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2003273130A
公开(公告)日：2003-09-26
申请号：JP2002072538
申请日：2002-03-15
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： FURUYA HIROYUKI , YOKOGAWA TOSHIYA , DEGUCHI MASAHIRO , YOSHII SHIGEO , SUZUKI CHIYOUJITSURIYO
IPC分类号： H01L21/338 , H01L29/778 , H01L29/78 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a compound semiconductor having a good operating characteristic.
SOLUTION: A mesa part formed on a substrate 1 comprises a high resistance layer 2, a channel layer 3 composed of Si-doped GaAs, a high resistance layer 4 composed of undoped GaAs, and a contact layer 5 composed of Si-doped GaAs. At the center of the mesa part, the contact layer 5 is etched and removed to expose the high resistance layer 4. A gate electrode 8 is formed on the exposed high resistance layer 4 to form a recess structure. A source electrode layer 6 and a drain electrode layer 7 are formed from the upper part of the contact layer 5 to the lower part of the side surface of the mesa part. A region of the contact layer 5 having neither the source electrode layer 6 nor the drain electrode layer 7 formed thereon and the high resistance layer 2 are coated with passivation layers 9a, 9b. Because the passivation layers 9a, 9b are composed of silicon oxynitride films, strain applied to the device can be made small.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种包括具有良好工作特性的化合物半导体的半导体器件。解决方案：形成在基板1上的台面部分包括高电阻层2，由掺杂Si的GaAs构成的沟道层3，由未掺杂的GaAs构成的高电阻层4和由Si掺杂的GaAs构成的接触层5，掺杂GaAs。在台面部分的中心处，蚀刻和去除接触层5以暴露高电阻层4.在暴露的高电阻层4上形成栅电极8以形成凹陷结构。源极电极层6和漏电极层7由接触层5的上部到台面的侧面的下部形成。没有形成源极电极层6和漏电极层7的接触层5的区域和高电阻层2都涂有钝化层9a，9b。由于钝化层9a，9b由氮氧化硅膜构成，所以可以使施加到器件的应变小。版权所有（C）2003，JPO

6. 发明专利

JP2007208290A Semiconductor laser and method for manufacturing the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2007208290A
公开(公告)日：2007-08-16
申请号：JP2007098715
申请日：2007-04-04
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HASEGAWA YOSHITERU , YOKOGAWA TOSHIYA
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of elongating a life in high light output operation.
SOLUTION: The semiconductor laser, wherein an n-type semiconductor layer 13, an active layer 101, and a p-type semiconductor layer 24 are laminated on a substrate 11 in this order, an intermediate layer 31 consisting of a gallium nitride-based compound semiconductor is formed between the layer 101 and the layer 24, the layer 31 is configured by laminating an undoped layer 31a where any dopant is not substantially doped and a diffusion inhibition layer 31b where an n-type dopant is doped, the layer 31b is disposed on a side adjacent to the layer 24, and the concentration of a p-type dopant in the layer 24 is 1 E19 cm
-3 or higher.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够延长高光输出操作的寿命的半导体激光器。解决方案：其中n型半导体层13，有源层101和p型半导体层24依次层叠在基板11上的半导体激光器，由氮化镓在层101和层24之间形成基于化合物半导体的层，层31通过层叠未掺杂的掺杂剂的未掺杂层31a和掺杂n型掺杂剂的扩散抑制层31b而构成， 31b设置在与层24相邻的一侧，层24中的p型掺杂剂的浓度为1E19cm 3 / SP>或更高。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005353702A Semiconductor laser device and manufacturing method thereof 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：JP2005353702A
公开(公告)日：2005-12-22
申请号：JP2004170421
申请日：2004-06-08
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HASEGAWA YOSHITERU , YOKOGAWA TOSHIYA , ISHIBASHI AKIHIKO
IPC分类号： H01S5/22
摘要： PROBLEM TO BE SOLVED: To output laser beams suitable for the reproduction and recording of data to an optical disk by using one semiconductor laser device. SOLUTION: The semiconductor laser device comprises a substrate 11, and a laminated structure 10 of a compound semiconductor supported by the substrate 11. The laminated structure 10 comprises a first-conductivity first cladding layer, a second-conductivity second cladding layer, and an active layer 15 held by the first and second cladding layers. And it comprises a first stripe-like current constriction section for constricting current to a first region 15a in the active layer 15; a second stripe-like current constriction section for constricting current to a second region 15b in the active layer; and an electrode structure for supplying current to at least one of the first region 15a and the second region 15b of the active layer 15 via at least one of the first and second stripe-like current constriction sections, and for radiating laser beams from at least one of the first region 15a and the second region 15b. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过使用一个半导体激光装置将适合于再现和记录数据的激光束输出到光盘。解决方案：半导体激光装置包括基板11和由基板11支撑的化合物半导体层叠结构10.层压结构10包括第一导电第一包层，第二导电第二包层，以及由第一和第二覆层保持的有源层15。并且其包括用于将电流收缩到有源层15中的第一区域15a的第一条状电流收缩部分; 第二条状电流收缩部分，用于收缩有源层中的第二区域15b的电流; 以及电极结构，用于经由第一和第二条状电流收缩部中的至少一个向至少一个有源层15的第一区域15a和第二区域15b提供电流，并且用于从至少一个辐射激光束第一区域15a和第二区域15b之一。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005056868A Method of manufacturing silicon carbide semiconductor device 审中-公开
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：JP2005056868A
公开(公告)日：2005-03-03
申请号：JP2001167974
申请日：2001-06-04
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： KUSUMOTO OSAMU , YOKOGAWA TOSHIYA , UCHIDA MASAO , YAMASHITA MASAYA , MIYANAGA RYOKO , KITAHATA MAKOTO , TAKAHASHI KUNIMASA
IPC分类号： H01L21/302 , H01L21/04 , H01L21/3065 , H01L21/336 , H01L29/12 , H01L29/24 , H01L29/423 , H01L29/78
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/42368 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To solve the problem that, when trench etching is performed on the surface of a silicon carbide semiconductor substrate while a high etching rate is maintained at the time of forming a gate oxide film on the surface of a trench in a trench MOS, a micro-trench is produced in the bottom section of the end section of the trench and electric field concentration occurs in the micro-trench due to the small radius of curvature of the micro-trench and lowers the withstand voltage of the gate oxide film.
SOLUTION: After a first etching step is performed by using a usual Al mask, a second etching step is performed for etching the whole surface of the silicon carbide semiconductor substrate after removing the Al mask.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了解决在对碳化硅半导体基板的表面进行沟槽蚀刻的同时在沟槽表面形成栅极氧化膜时保持高的蚀刻速度的问题在沟槽MOS中，在沟槽的端部的底部产生微沟槽，由于微沟槽的小曲率半径而在微沟槽中发生电场集中，并且降低了栅氧化膜。解决方案：在通过使用通常的Al掩模进行第一蚀刻步骤之后，执行第二蚀刻步骤，以在去除Al掩模之后蚀刻碳化硅半导体衬底的整个表面。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2007188107A Planar type optical modulator 有权
标题翻译：平面型光学调制器
公开(公告)号：JP2007188107A
公开(公告)日：2007-07-26
申请号：JP2007097972
申请日：2007-04-04
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OTSUKA NOBUYUKI , YOSHII SHIGEO , KITO MASAHIRO , YOKOGAWA TOSHIYA
IPC分类号： G02F1/017
摘要： PROBLEM TO BE SOLVED: To solve a problem that intensity of light emitted from a conventional planar type optical modulator is significantly low.
SOLUTION: The modulator is provided with: a first semiconductor layer (33) of a first conductive type; a second semiconductor layer (31) of a second conductive type bonded to the first semiconductor layer; a third semiconductor layer (46) of the second conductive type; a dielectric layer (111) formed between the second semiconductor layer and the third semiconductor layer; an antenna electrode (32) having a plurality of conductive pieces which are formed within the dielectric layer so as to have a network shape as a whole, to be separated one another at the intersections of the network shape, and to be disposed in contact with both of the second and third semiconductor layers; a first electrode (8) electrically connected to the first semiconductor layer; and a second electrode (7) electrically connected to the third semiconductor layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了解决从传统的平面型光学调制器发射的光的强度显着降低的问题。解决方案：调制器设置有：第一导电类型的第一半导体层（33）第二导电类型的第二半导体层（31），其结合到第一半导体层; 第二导电类型的第三半导体层（46）; 形成在所述第二半导体层和所述第三半导体层之间的介电层（111）具有多个导电片的天线电极（32），其形成在电介质层内以形成整体的网状，在网状交点处彼此分离，并与第二和第三半导体层的两个; 电连接到第一半导体层的第一电极（8）和与第三半导体层电连接的第二电极（7）。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005354107A Nitride semiconductor light-emitting element 有权
标题翻译：氮化物半导体发光元件
公开(公告)号：JP2005354107A
公开(公告)日：2005-12-22
申请号：JP2005229190
申请日：2005-08-08
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HASEGAWA YOSHITERU , YOKOGAWA TOSHIYA , ISHIBASHI AKIHIKO
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element that reduces noise by suppressing light (stray light) leaked from a substrate, and improves the characteristics and yields of a laser and extends lifetime at high temperature and in high light output operation by promoting the flattening of a laser crystal surface. SOLUTION: The nitride semiconductor light-emitting element 1 comprises a substrate 11 made of a nitride semiconductor; a stray light suppression flattening layer 12 that is formed so that it is in contact with the upper surface of the substrate 11, and is made of a nitride semiconductor containing p-type impurities; a first cladding layer 14 that is formed on the stray light suppression flattening layer 12, and is made of a nitride semiconductor containing a first-conductive impurity; an active layer 16 formed on the first cladding layer 14; and a second-conductive cladding layer 20 that is formed on the active layer 16, and is made of a nitride semiconductor containing second-conductive impurities. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过抑制从基板泄漏的光（杂散光）来降低噪声的氮化物半导体发光元件，并且提高激光器的特性和产量，并且在高温和高温下延长寿命通过促进激光晶体表面的平坦化来实现光输出操作。解决方案：氮化物半导体发光元件1包括由氮化物半导体制成的衬底11; 形成为与基板11的上表面接触的杂散光抑制扁平层12，由含有p型杂质的氮化物半导体构成; 形成在杂散光抑制平坦化层12上的由包含第一导电杂质的氮化物半导体构成的第一包层14; 形成在第一包层14上的有源层16; 以及形成在有源层16上的由包含第二导电杂质的氮化物半导体制成的第二导电覆层20。版权所有（C）2006，JPO＆NCIPI

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