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1. 发明专利

JP2005079217A Thermal analysis method, program for performing the same, heating control unit, and heating equipment 有权
标题翻译：热分析方法，执行方法，加热控制单元和加热设备
公开(公告)号：JP2005079217A
公开(公告)日：2005-03-24
申请号：JP2003305720
申请日：2003-08-29
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ISOHATA YOSHIO , NONOMURA MASARU , TAKAHASHI MASARU
IPC分类号： B23K1/008 , B23K3/04 , B23K101/42 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a thermal analysis method and a program for the thermal analysis which can efficiently find out heating condition including front and rear temperature difference of heating equipment without using physical property value of a workpiece. SOLUTION: On the basis of heating temperature (Ta) including front and rear temperature difference in at least one arbitrary measuring point of the heating equipment, heating time (t), and measuring temperature (initial temperature Tint, final temperature Ts) in at least one arbitrary point of measurement of the workpiece, heating property is evaluated as one constant for every point of measurement. This heating characteristic value (m value) can be calculated without inputting physical property value of the workpiece. If the m value is used, simulation is enabled in high precision in a short time without surveying temperature profile of the workpiece by correction of heating condition. If this simulation is used, heating condition suitable for requirement can be obtained easily. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于热分析的热分析方法和程序，其可以在不使用工件的物理特性值的情况下有效地找出包括加热设备的前后温差的加热条件。解决方案：基于加热设备的至少一个任意测量点，加热时间（t）和测量温度（初始温度Tint，最终温度Ts）的前后温度差的加热温度（Ta）在工件的至少一个任意测量点，对于每个测量点，加热性能被评估为一个常数。可以在不输入工件的物理特性值的情况下计算该加热特性值（m值）。如果使用m值，则通过校正加热条件，在短时间内以高精度启用模拟，而不对工件的温度分布进行测量。如果使用该模拟，则可以容易地获得适合要求的加热条件。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2004064002A Thermal analysis method and device, and program and heating control device for carrying out the method thereof 有权
公开(公告)号：JP2004064002A
公开(公告)日：2004-02-26
申请号：JP2002223536
申请日：2002-07-31
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NONOMURA MASARU , ISOHATA YOSHIO , ONISHI HIROAKI , TANIGUCHI MASAHIRO
IPC分类号： C21D11/00 , G05D23/19 , H05K3/34
CPC分类号： G05D23/1951 , H05K3/3494
摘要： PROBLEM TO BE SOLVED: To provide a thermal analysis method and a program for thermal analysis, efficiently finding out the heating conditions of a heat device, without using the property values of an object to be heated. SOLUTION: Heating characteristics are digitized as one constant for each measurement point, based on at least a heat temperature (Ta) at an arbitrary measurement point and a heat time (t), and measurement temperatures (an initial temperature Tint, an attained temperature Ts). This heating characteristic values (an m value) can be calculated, without inputting the property value of the object. Using the m value enables highly accurate simulation within a short time, without actually measuring the temperature profile of the object by the correction of the heat condition. The use of this simulation enables easy determination of the heat condition suited to the requirements. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2003332725A Reflow heating method and device 有权
标题翻译： REFLOW加热方法和装置
公开(公告)号：JP2003332725A
公开(公告)日：2003-11-21
申请号：JP2002138256
申请日：2002-05-14
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： TANIGUCHI MASAHIRO , NONOMURA MASARU , ABE TOSHIHIRO , MIURA KOJI
IPC分类号： B23K1/00 , B23K1/008 , B23K3/04 , B23K101/42 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a reflow heating method and device, which are capable of surely blowing a flow of hot air controlled to be kept at a prescribed temperature at a printed circuit board in transit so as to heat it up uniformly with high efficiency.
SOLUTION: When the printed circuit board 3 temporarily mounted with an electronic component 13 through cream solder is heated so as to solder the electronic component 13 to the printed circuit board 3 with the molten cream solder, a hot air blowing nozzle 18 is made to blow a flow of hot air H heated at a prescribed temperature against the printed circuit board 3, which is transferred along a substrate transfer path 14, at a right angle, and a flow of hot air C that drops in temperature as giving its heat to the printed circuit board 3 is recovered as flowing opposite to and parallel with the direction in which the hot air H blows.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种回流加热方法和装置，其能够确保在运输过程中将被控制的热空气流保持在印刷电路板处，以便将其均匀地加热效率高。解决方案：当通过膏状焊膏临时安装电子部件13的印刷电路板3被加热以便用熔融的膏状焊剂将电子部件13焊接到印刷电路板3时，热空气吹制喷嘴18是使得以规定温度加热的热空气流H以直接沿着基板传送路径14传送的印刷电路板3和温度下降的热空气C流动回流到印刷电路板3的热量与热空气H吹过的方向相反并平行。版权所有（C）2004，JPO

4. 发明专利

JP2005340422A Method for assembling electronic component module and method for plasma treatment 有权
标题翻译：用于组装电子元件模块的方法和等离子体处理方法
公开(公告)号：JP2005340422A
公开(公告)日：2005-12-08
申请号：JP2004155836
申请日：2004-05-26
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NONOMURA MASARU , MIZUKAMI TATSUHIRO
IPC分类号： H01L21/60 , H01L21/56 , H01L23/31 , H05K3/26 , H05K3/30
CPC分类号： H01L23/3142 , H01L21/563 , H01L24/28 , H01L2224/16225 , H01L2224/73203 , H01L2224/83102 , H01L2224/92125 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01033 , H01L2924/01082 , H01L2924/09701 , H05K3/26 , H05K3/305 , H01L2924/3512 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method for assembling an electronic component module and a plasma treatment method by which a surface improvement in fine gap between a substrate and an electronic component can be efficiently performed.
SOLUTION: In the assembling process of an electronic component module having a constitution that a fine gap is sealed by resin between a substrate to which the electronic component is bonded through a bump and the electronic component, plasma treatment for improving a surface in the fine gap is performed by using a mixed gas containing oxygen and helium as a plasma discharging gas. Consequently, many gas particles such as oxygen radicals can be entered into the fine gap for plasma treatment by increasing a gas diffusion coefficient at the time of plasma discharge, and a good surface improvement can be efficiently performed even in the deep part of the fine gap.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于组装电子部件模块的方法和等离子体处理方法，通过该方法可以有效地执行基板和电子部件之间的细小间隙的表面改善。解决方案：在电子部件模块的组装过程中，具有通过凸块与电子部件接合的基板与电子部件之间通过树脂密封微细间隙的构造，用于改善表面的等离子体处理通过使用含有氧和氦的混合气体作为等离子体放电气体来进行微小间隙。因此，通过增加等离子体放电时的气体扩散系数，可以将诸如氧自由基的许多气体颗粒进入用于等离子体处理的微细间隙，并且即使在微细间隙的深部也能够有效地进行良好的表面改善。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2007250731A Plasma processor and surface reforming method 有权
标题翻译：等离子体处理器和表面改性方法
公开(公告)号：JP2007250731A
公开(公告)日：2007-09-27
申请号：JP2006070617
申请日：2006-03-15
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ARITA KIYOSHI , MORISAKO ISAMU , NONOMURA MASARU , MIZUKAMI TATSUHIRO
IPC分类号： H01L21/56 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processor which realizes a good surface reforming effect at a low cost by a simple mechanism, and a substrate surface reforming method by the plasma processing. SOLUTION: The surface reforming method for reforming the surface of a substrate 8 having a mounted semiconductor chip 20 by a parallel flat-plate plasma processor before sealing with resin comprises supporting the substrate 8 with its object surface 8b down by a support member 7a, forming a gap space S of a gap size (d) not causing the plasma discharge below the substrate 8, and applying a plasma process so that only oxygen radicals 32 produced by plasma act on the object surface 8b. This avoids reducing the adhesion due to excessive etching of the object surface 8b by oxygen ion 31, thereby realizing a satisfactory surface reforming effect at a low cost by a simple mechanism. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过简单的机构以低成本实现良好的表面重整效果的等离子体处理器，以及通过等离子体处理的基板表面重整方法。解决方案：在用树脂密封之前通过平行平板等离子体处理器重新形成具有安装的半导体芯片20的基板8的表面的表面重整方法包括：通过支撑构件将基板8的物体表面8b向下支撑如图7a所示，形成间隙尺寸（d）的间隙空间S，其不会使基板8下方的等离子体放电，并且施加等离子体处理，使得仅由等离子体产生的氧自由基32作用在物体表面8b上。这避免了由于氧离子31对物体表面8b的过度蚀刻而导致的附着力降低，从而通过简单的机构以低成本实现令人满意的表面重整效果。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007234713A Component bonding method, and component laminating method 有权
标题翻译：组件接合方法和组件层合方法
公开(公告)号：JP2007234713A
公开(公告)日：2007-09-13
申请号：JP2006051729
申请日：2006-02-28
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： HAJI HIROSHI , OSONO MITSURU , KASAI TERUAKI , NONOMURA MASARU
IPC分类号： H01L21/52
CPC分类号： H01L24/83 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/75 , H01L25/0657 , H01L25/50 , H01L2224/29007 , H01L2224/2919 , H01L2224/29298 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/73265 , H01L2224/83191 , H01L2224/83193 , H01L2224/83855 , H01L2224/83856 , H01L2224/92247 , H01L2225/0651 , H01L2225/06575 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01033 , H01L2924/01057 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： PROBLEM TO BE SOLVED: To provide a component bonding method capable of raising productivity in thermal compression bonding, and to provide a component laminating method. SOLUTION: In the component bonding, a semiconductor component 13 with a thermosetting adhesive layer 13c arranged on its sole surface is bonded to a substrate 5 having a resin layer on the front surface. The resin surface 5a of the substrate 5 is previously reformed by plasma processing so as to raise wetting property, and then, the semiconductor component 13 is held with a component holding nozzle 12 having a heating means. The adhesive layer 13c is abutted onto the resin layer with the surface reformed therein so as to thermally harden the adhesive layer 13c by heating with the heating means. Then, adherence is raised between the adhesive layer 13c and the resin surface 5a. Consequently, the component holding nozzle 12 is separated from the semiconductor component 13 without waiting for the perfect hardening of the adhesive layer 13c, a time required for the component juncture is shortened, so that the productivity is raised in the thermal compression bonding. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够提高热压接的生产率的部件接合方法，并提供部件层压方法。解决方案：在部件接合中，将具有布置在其鞋底表面上的热固性粘合剂层13c的半导体部件13接合到在前表面上具有树脂层的基板5。基板5的树脂表面5a通过等离子体处理预先重整以提高润湿性，然后用具有加热装置的部件保持喷嘴12保持半导体部件13。粘合剂层13c与表面改性的树脂层抵接，以通过加热装置加热使粘合剂层13c热硬化。然后，在粘合层13c和树脂表面5a之间粘附。因此，在不等待粘合层13c的完美硬化的情况下，将部件保持喷嘴12与半导体部件13分离，能够缩短部件接合所需的时间，从而在热压接中提高生产率。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005116595A Plasma processing apparatus, plasma processing method and electronic component manufacturing method 有权
标题翻译：等离子体处理装置，等离子体处理方法和电子元件制造方法
公开(公告)号：JP2005116595A
公开(公告)日：2005-04-28
申请号：JP2003345409
申请日：2003-10-03
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： MORISAKO ISAMU , KIDACHI TETSUHIRO , NONOMURA MASARU , NAGATOME RYUJI
IPC分类号： H05H1/46 , H01L21/3065 , H01L21/56
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can obtain sufficient modification effect without giving damage to a processing object, and to provide a plasma processing method and an electronic component manufacturing method using the plasma processing method. SOLUTION: In the plasma processing, surface reforming of a treatment intended surface including the inner surface of a narrow volume is performed by plasma treatment using plasma generation gas containing oxygen gas. Gas for plasma generation is used in a plasma treatment volume in which plasma discharge is generated while the processing object is set between electrodes of the plasma processing apparatus of a parallel flat plane type. Pressure raising control is performed wherein the treatment pressure of the gas for plasma generation is raised from a first pressure P1 lower than the atmospheric pressure to a second pressure P2 higher than the first pressure P1. Consequently, oxygen radical is made to flow compulsorily in the narrow volume in the pressure raising process, and sufficient modification effect can be obtained without giving damage to the processing object by raising treatment pressure excessively. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种等离子体处理装置，其可以获得足够的改进效果而不损害处理对象，并且提供使用等离子体处理方法的等离子体处理方法和电子部件制造方法。解决方案：在等离子体处理中，通过使用含有氧气的等离子体产生气体的等离子体处理进行包括窄体积的内表面的处理目标表面的表面重整。用于等离子体产生的气体用于等离子体处理体积中，其中处理对象被设置在平行平面型等离子体处理装置的电极之间时产生等离子体放电。进行升压控制，其中用于等离子体产生的气体的处理压力从低于大气压的第一压力P1升高到高于第一压力P1的第二压力P2。因此，在升压过程中，使氧自由基在狭窄的体积中强制流动，并且通过过度提高处理压力而不会对加工对象造成损害，可以获得充分的改性效果。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004214535A Gas-blow-out hole array structure and heater 有权
公开(公告)号：JP2004214535A
公开(公告)日：2004-07-29
申请号：JP2003002110
申请日：2003-01-08
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： FURUSAWA AKIO , TANIGUCHI MASAHIRO , ABE TOSHIHIRO , NONOMURA MASARU
IPC分类号： B23K1/008 , B23K101/42 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide a gas-blow-out hole array structure and a heater by which the whole surface of a circuit board can be heated almost equally at the time of soldering the circuit board.
SOLUTION: All opening holes 155 formed in a hot-air blow-out plate 150 are made to be disposed uniformly in the widthwise direction 103a of the plate 150.
COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2003071562A Exhaust gas control method for reflow device and reflow device 审中-公开
标题翻译：用于反流装置和反流装置的排气控制方法
公开(公告)号：JP2003071562A
公开(公告)日：2003-03-11
申请号：JP2001261476
申请日：2001-08-30
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： NAGAFUKU NOBUYASU , IIZUKA AKIRA , NONOMURA MASARU , ABE TOSHIHIRO
IPC分类号： B23K1/008 , B23K1/00 , B23K3/04 , B23K31/02 , B23K101/42 , F27B9/30 , F27B9/40 , F27D19/00 , F27D21/00 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To provide an exhaust gas control method for a reflow device and a reflow device capable of reducing power consumption by not operating a blower when the exhaustion is not needed, and capable of suppressing the increase in power caused by flowing-in of outside air by controlling the exhaust gas from respective suction ducts.
SOLUTION: In the exhaust gas control method for the reflow device for sucking a hot gas in a furnace body leaking from a base plate taking-in port 11 and a base plate taking-out port 13 from suction ducts 31, 32 provided outside the base plate taking-in port 11 and the base plate taking-out port 13 to exhaust to the outside of the device, the operation of an exhaust blower 35 connected to the suction ducts 31, 32 is controlled by the temperature of a furnace body 17, and the suction of the respective suction ducts 31, 32 is controlled by control valves 41, 42 mounted to the suction ducts 31, 32 intervened in between respectively.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于回流装置和回流装置的排气控制方法，该回流装置能够在不需要排气时通过不运行鼓风机来降低功耗，并且能够抑制由流入引起的功率的增加通过控制来自相应抽吸管道的废气来实现。解决方案：在用于从设置在基座外部的吸入管道31,32从基板入口11和基板取出口13泄漏的炉体吸入热气体的回流装置的排气控制方法中，板吸入口11和基板取出口13排出到设备的外部，连接到吸入管道31,32的排气鼓风机35的操作由炉体17的温度控制，并且相应的吸入管道31,32的吸力由安装在分别介于其间的吸入管道31,32的控制阀41,42来控制。

10. 发明专利

JPH06286810A THIN PLATE STORAGE DEVICE 失效
公开(公告)号：JPH06286810A
公开(公告)日：1994-10-11
申请号：JP7661493
申请日：1993-04-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NONOMURA MASARU , TANIHARA TSUKASA
IPC分类号： B65G1/00 , H05K7/18
摘要： PURPOSE:To provide a thin plate storage device provided with ventilation through holes capable of solving such problems as not able to insert thin plates into a storage device and thin plates falling from the storage device due to deformation of the storage device caused by the temperature of the thin plates and capable of raising reliability of the storage device. CONSTITUTION:By providing through holes 4c on groove crests 4b on side plates 4 of a thin plate storage device, heat radiation from circuit substrates 6, which are the storage objective thin plates, is radiated to the outside of the storage device through the through holes 4c when the circuit substrates 6 are stored in the storage device in high temperature as it is, thereby sudden increase of storage device internal atmosphere, continuation of internal atmosphere in high temperature for a hours and distinguished temperature difference between the internal atmosphere and the external atmosphere of the storage device can be avoided. Thus distortion of shapes caused by expansion of materials of the side plates 4 and a ceiling plate 5, which is casused by reasons mentioned above, can be prevented and a thin plate storage device of high reliability can be obtained because the initial side plate interval dimension L2, which is set on the width of the circuit substrates 6 beforehand, may never change.

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