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    • 3. 发明专利
    • Magnetic reluctance element and magnetic detector using the same
    • 磁性元件和磁性探测器使用它
    • JPH11274596A
    • 1999-10-08
    • JP7214998
    • 1998-03-20
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • HATTORI TAKAMICHIUEDA SHINJIROKORECHIKA AKIHIROKAWASAKI TETSUOYAMAGUCHI MASAKO
    • H01L43/02G01R33/09
    • PROBLEM TO BE SOLVED: To improve heat resistance of a magnetic reluctance element wherein a semiconductor thin film magnetic reluctance film is used.
      SOLUTION: The element has an element chip with a pair of electrode parts, an enclosing part 12 provided to enclose a periphery of an element chip, one or more pairs of inner lead parts 13a, 13b which are extended inside the enclosing part 12 and electrically connected to a pair of electrode parts of the element chip mounted inside the enclosing part 12, and a pair of outer lead parts 14a, 14b and a common outer lead part electrically connected to an external circuit extended outside the enclosing part 12. The enclosing part 12 is provided with a lead comb terminal 11 wherein cut-off parts 16a, 16b are arranged to prevent a pair of outer lead parts 14a, 14b and a common outer lead are not electrically connected and a resin mold formed to cover a surface and a side surface of the element chip and at least a part of an enclosing part of the lead comb terminal 11.
      COPYRIGHT: (C)1999,JPO
    • 要解决的问题:提高使用半导体薄膜磁阻膜的磁阻元件的耐热性。 解决方案:元件具有带有一对电极部件的元件芯片,设置成包围元件芯片周边的封闭部分12,一对或多对内引线部分13a,13b,其在封闭部分12内延伸并且电 连接到安装在包围部分12内部的元件芯片的一对电极部分,以及一对外部引线部分14a,14b和与外部电路延伸到外部部分12外部的公共外引线部分。封闭部分 在图12中,设置有引线梳端子11,其中,切断部分16a,16b设置成防止一对外部引线部分14a,14b和公共外引线不电连接,并且形成为覆盖表面的树脂模具和 元件芯片的侧表面和引线梳端子11的封闭部分的至少一部分。
    • 9. 发明专利
    • MANGETOELECTRIC ELEMENT AND MANUFACTURE THEREOF
    • JP2001036163A
    • 2001-02-09
    • JP21044099
    • 1999-07-26
    • MATSUSHITA ELECTRIC IND CO LTD
    • KAWASAKI TETSUOHATTORI TAKAMICHIYAMAGUCHI MASAKOKORECHIKA AKIHIRO
    • G01D5/18H01L43/06
    • PROBLEM TO BE SOLVED: To improve reliability of a galvanomagnetic element by securing continuity of a conducting layer in the step section of a magnetism sensitive layer, by providing a conductive step coating layer either continuously from the partial surface of the conductive layer on the magnetism sensitive layer to the partial surface of at least the continuous or approximate conductive layer on a substrate. SOLUTION: A galvanomagnetic element is provided with a magnetism sensitive layer 12 on the upper surface of a substrate 11, and the layer 12 converts the variation of magnetic field intensity into variation of electrical characteristics by the Hall effect possessed of a semiconductor. The element is also provided with a conductive layer 13 at a desired spot on the upper surface of the magnetism sensitive layer 12 and the layer 13 electrically connects the layer 12 to connection terminals 15. In addition, the element is also provided with a step coating layer 14 formed continuously from the upper surface of the conductive layer 13 on the magnetism sensitive layer 12 and the upper surface of the layer 13 on the substrate 11 for securing continuity between the conductive layer 13 on the magnetism sensitive layer 12 and the layer 13 on the substrate 11. The element is connected to external electric terminals through the connection terminals 15 provided on the partial surface of the conductive layer 13 on the upper surface of the substrate 11 in a region, where the layer 13 is not in contact with the coating layer 14.