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1. 发明专利

JP2502505B2 失效
公开(公告)号：JP2502505B2
公开(公告)日：1996-05-29
申请号：JP17790585
申请日：1985-08-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO , ISHIHARA TAKESHI , YAMAGA EIZO
IPC分类号： H01L27/146 , G01J1/02 , G01J5/02 , G01J5/34 , G01J5/48 , H01L27/14 , H04N5/33 , H04N5/335 , H04N5/357 , H04N5/372 , H04N5/374

2. 发明专利

JPS6212159A PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPS6212159A
公开(公告)日：1987-01-21
申请号：JP15072585
申请日：1985-07-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： AOKI YOSHITAKA , YANO KOSAKU , NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H01L27/14 , H04N5/335 , H04N5/357 , H04N5/372 , H04N5/374
摘要： PURPOSE:To form a photoelectric conversion device capable of being used for a laminated type solid-state image pickup device having excellent color separation characteristics by shaping a light-shielding layer at the position of a photoelectric conversion layer on the beam incidence side between sampling electrodes. CONSTITUTION:Mo is sputtered onto a semiconductor substrate 1 having a signal scanning function. Mo is etched selectively so as to leave only the sections of sampling electrodes 2. An intrinsic amorphous silicon layer (an I layer) 3 and a P-type amorphous silicon layer (a P layer) 4 are deposited in succession by using a plane parallel plate type plasma CVD method, and amorphous silicon mainly comprising Si and containing hydrogen respectively is formed as photoelectric conversion layers. ITO transparent electrodes 6 are shaped through a DC sputtering method. Mo is further applied onto the electrodes 6. Mo is etched selectively so as to leave the light-shielding layers 6 at positions among the sampling electrodes 2. Optical filters 8 for single plates are bonded with adhesives 7, thus manufacturing a laminated type solid-state image pickup device.

3. 发明专利

JPS6195680A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS6195680A
公开(公告)日：1986-05-14
申请号：JP21674184
申请日：1984-10-16
申请人： Matsushita Electric Ind Co Ltd
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/14 , H01L27/146 , H04N5/335 , H04N5/359 , H04N5/372
摘要： PURPOSE: To reduce smears of a two-dimensional solid-state image pickup device by constituting said device of plural photoelectric conversion parts formed on a semiconductor substrate and a scan circuit and constituting an inter-layer insulating film except the photoelectric conversion parts of a high-resistance light shielding member.
CONSTITUTION: Photodiode 2, a gate channel part 3 of a read MOS, a transfer channel 4 of a CCD, a gate oxide film 5, a PolySi electrode 6 for servicing as the read gate of the read MOS and the transfer gate of the CCD, a field oxide film 7 and a channel stopper 8 are formed on the semiconductor substrate 1. Moreover, an inter-layer insulating film 19 of low transmissivity, which employs a-Si or other photoelectric target member of an image pickup tube, and a light shielding metallic film 10 on the transfer channel of the CCD are formed. Direct entry of a strong incident light 11 on the transfer channel to the transfer channel is inhibited by the light shielding metallic layer 10. On the other hand, an incident light 13 passing through an opening 12 on the photodiode 2 reduces entry light up to adjacent picture element parts due to the existence of the film 19.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过构成形成在半导体衬底和扫描电路上的多个光电转换部件的所述器件，并且除了高的光电转换部分之外构成层间绝缘膜，以减少二维固态摄像器件的污迹电阻光屏蔽构件。构成：光电二极管2，读取MOS的栅极沟道部分3，CCD的传输沟道4，栅极氧化膜5，用于维持读取MOS的读取栅极的多晶硅电极6和CCD的传输门在半导体衬底1上形成场氧化物膜7和沟道阻挡层8.此外，采用Si图像拾取管的-si或其它光电目标构件的低透射率的层间绝缘膜19和形成CCD的传输通道上的遮光金属膜10。通过遮光金属层10直接将强入射光11输入到传输通道上。另一方面，通过光电二极管2上的开口12的入射光13将入射光减少到相邻由于电影19的存在而导致的图像元素部分。

4. 发明专利

JPS59211386A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS59211386A
公开(公告)日：1984-11-30
申请号：JP8613083
申请日：1983-05-16
申请人： Matsushita Electric Ind Co Ltd
发明人： CHIKAMURA TAKAO , NAKAYAMA MITSUO , YONEDA TADAO , ISHIKAWA OONORI , UENO ATSUSHI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14665
摘要： PURPOSE:To attain high density for picture elements and high speed by forming MOS transistors (TRs) reading a signal charge on a photoconductive film into a vertical scanning circuit in longitudinal direction. CONSTITUTION:A gate electrode 21 of the MOS TRs forms a row connection with the vertical scanning circuit. Further, a drain section 24 has the opposite conduction to that of a substrate 32 and forms a column connection to a horizontal scanning circuit via a diffusion layer 25 having the same conduction type. Further, a source section 26 has an opposite conductive type as that of the substrate 32 and is connected to a metallic electrode 28. Then, the MOS TRs reading the signal on the photoconductive film into the drain scanned vertically are formed in longitudinal form.
摘要翻译：目的：通过将光电导膜上的信号电荷读取成垂直扫描电路的MOS晶体管（TRs）在纵向方向上获得高密度的图像元素和高速度。构成：MOS TR的栅电极21与垂直扫描电路形成行连接。此外，漏极部分24具有与衬底32相反的导通，并且通过具有相同导电类型的扩散层25形成与水平扫描电路的列连接。此外，源极部分26具有与衬底32相反的导电类型并且连接到金属电极28.然后，将垂直扫描的导电膜上的信号读取到垂直扫描的漏极中的MOS TR形成为纵向形式。

5. 发明专利

JPS59141264A Solid-state image pick-up element 失效
标题翻译：固态图像拾取元件
公开(公告)号：JPS59141264A
公开(公告)日：1984-08-13
申请号：JP1489783
申请日：1983-01-31
申请人： Matsushita Electric Ind Co Ltd
发明人： YONEDA MASATO , NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14665
摘要： PURPOSE:To prevent the reduction of photoconductive film bias voltage due to a parasitic capacitance effect by forming a reading gate pattern and a photoconductive film coupling pattern, picture elements thereof are displaced. CONSTITUTION:CCD charge transfer gates 3, 4 read signal charges to a CCD charge transfer line 2 from a charge storage diode n+ diffusion section 1. Conductor coupling patterns 6A, 6B connected to an electrode 7A in a photoconductive film 8 are formed to diffusion sections 1A, 1B, and the patterns 6A, 6B are brought into contact with adjacent diffusion sections 1A, 1B, which are off to the lower left and are displaced only by one picture element. Signal charges, which are generated by the photoconductive film 8 and stored in the diffusion section 1A displaced only by one picture element through the collector metallic electrode 7A and the coupling pattern 6A, are read to a CCD potential pocket under the gate 4. The effect of reduction of bias voltage applied to the photoconductive film can be minimized because parasitic capacitance is hardly formed between the coupling pattern 6A and the gate 4.
摘要翻译：目的：为了通过形成读取栅极图案和光电导膜耦合图案来防止由于寄生电容效应引起的光电导膜偏置电压的降低，其像素被移位。构成：CCD电荷转移门3,4从电荷存储二极管n +扩散部分1向CCD电荷传输线2读取信号电荷。连接到光电导膜8中的电极7A的导体耦合图案6A，6B形成为扩散部分如图1A，1B所示，图案6A，6B与相邻的扩散部分1A，1B接触，该扩散部分1A，1B离开左下方仅被一个像素移位。由光电导膜8产生并存储在仅通过集电极金属电极7A和耦合图案6A移位一个像素的扩散部分1A中的信号电荷被读取到栅极4下方的CCD电位袋。效应由于在耦合图案6A和栅极4之间几乎不形成寄生电容，所以可减小施加于光电导膜的偏置电压。

6. 发明专利

JPS58108769A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58108769A
公开(公告)日：1983-06-28
申请号：JP20857381
申请日：1981-12-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/00 , H01L21/66 , H01L27/06
摘要： PURPOSE:To allow the characteristic evaluation of each semiconductor layer, by exposing a part of an IC formed on each semiconductor layer, in a semicondutor device wherein many semiconductor layers with ICs are stacked. CONSTITUTION:On the first layer semiconductor substrate 1, the second layer semiconductor layer 2 is formed via an insulator, and further, in the same manner, semiconductor layers are stacked up to the nth one n. On each semiconductor layers 1-n, a plurality of semiconductor ICs are respectively formed, and, at each parts M1-Mn, monitor transistors Tr1, Tr2...Trn formed on each semiconductor layers 1-n are exposed on a semiconductor layer n. In other words, a part of a plurality of transistors formed on the second layer semiconductor substrate 2-1 is exposed to the outside at the part M2, as a monitor transistor Tr2, and therefore the measurement from the outside is available.

7. 发明专利

JPS587985A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS587985A
公开(公告)日：1983-01-17
申请号：JP10680581
申请日：1981-07-07
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/3728 , H04N5/374 , H04N5/378
摘要： PURPOSE:To prevent the signal charge from being left half stored in one read and eliminate the residual image on the image pickup screen due to the excessive signal charge, by connecting a diode, which has a function to clip the potential of a diode for signal storage, to the diode for signal storage in a photodetecting part. CONSTITUTION:A row of photodetectors a1-an consisting of signal charge storage diodes, where a photoconductor film for conversion from an optical signal to an electric signal is formed in a solid-state image pickup device and the optical signal charge generated in this photoconductor film is stored, and a row of photodetectors b1-bn which read in the charge from a row of photodetectors a1-an and transfer the charge vertically in the direction of a code PT are provided. A diffusion layer 15 forming the second diode which has the conduction type opposite to that of the first diode part 1 is provided in the first diode part 1 of a row of photodetectors a1-an in this constitution and is insulated from a metallic electrode 2 of the diode part 1 and is connected to a polysilicon electrode 16 by a contact part 17. An optical voltage is applied to the diffusion layer through the electrode 16 to clip the potential of the diode part 1, thus preventing the signal charge from being left half stored.

8. 发明专利

JPS57133774A DRIVING METHOD FOR SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS57133774A
公开(公告)日：1982-08-18
申请号：JP1878881
申请日：1981-02-10
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NAKAYAMA MITSUO , KADOTA HIROSHI
IPC分类号： H04N5/335 , H04N5/359 , H04N5/3728
摘要： PURPOSE:To eliminate the effect of excessive charge at the photodetector, by reading excessive photo signal charge at the photodetector to a vertical scanning line during a vertical blanking period, transmitting it vertically to the horizontal line and providing pulse train to pick up as an excessive signal from the horizontal line. CONSTITUTION:A photo signal charge is read out to a vertical CCD transfer line 7 via a gate 8 from a photo diode 6 by applying a read pulse to a polysilicon electrode 9 or 10 at each one field. Next, the charge is transferred vertically at each one horizontal period through the application of transfer pulse to the electrodes 9 and 10 and picked up horizontally at each one horizontal period as an output signal.

9. 发明专利

JPS6321352B2 失效
公开(公告)号：JPS6321352B2
公开(公告)日：1988-05-06
申请号：JP1489783
申请日：1983-01-31
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YONEDA MASATO , NAKAYAMA MITSUO
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374

10. 发明专利

JPS6211832B2 失效
公开(公告)号：JPS6211832B2
公开(公告)日：1987-03-14
申请号：JP2025180
申请日：1980-02-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHINO MASARU , WADA TAKAMICHI , NAKAYAMA MITSUO , TERUI YASUAKI
IPC分类号： H01L27/146 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/359 , H04N5/3728

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