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    • 1. 发明专利
    • Deposition method for base body
    • 基体沉积方法
    • JP2006276658A
    • 2006-10-12
    • JP2005097995
    • 2005-03-30
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • KURAMOTO AKIMASATAKIMOTO SATORUMINOCHI KOSUKENIIGAE RYUICHI
    • G03G5/082
    • PROBLEM TO BE SOLVED: To provide a deposition method that can reduce variance in a state of deposition among a plurality of base bodies when the plurality of base bodies are deposited.
      SOLUTION: In the deposition method for the base bodies, CVD gas is charged in a vacuum container which contains the plurality of base bodies and is grounded, a pulse high-frequency voltage and a pulse bias voltage are applied one over the other to the plurality of base bodies at the same time to produce plasma around the plurality of base bodies, and ions in the plasma are attracted to the plurality of base bodies to deposit the base bodies. When the plurality of base bodies are deposited, a plurality of ground members which are hollow cylinders and arranged in the vacuum container to house the plurality of base bodies respectively are grounded and the pulse bias voltage applied to the plurality of base bodies is so controlled that the mean current becomes larger and larger according as the number of the plurality of base bodies become larger and larger.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种当沉积多个基体时可以减少多个基体之间的沉积状态的变化的沉积方法。 解决方案:在基体的沉积方法中,将CVD气体装入包含多个基体的真空容器中并接地,脉冲高频电压和脉冲偏置电压彼此相加 同时在多个基体上产生等离子体,并且等离子体中的离子被吸引到多个基体以沉积基体。 当沉积多个基体时,多个分别位于真空容器中的中空圆柱体的接地构件分别接地,并且施加到多个基体的脉冲偏置电压被控制,使得 随着多个基体的数量变得越来越大,平均电流变得越来越大。 版权所有(C)2007,JPO&INPIT
    • 4. 发明专利
    • COLOR COPYING DEVICE
    • JPS62171278A
    • 1987-07-28
    • JP1118286
    • 1986-01-23
    • MATSUSHITA ELECTRIC IND CO LTD
    • KURAMOTO AKIMASA
    • G03G15/01H04N1/46H04N1/48
    • PURPOSE:To obtain a color picture with sharp black color by obtaining the signal of black picture only from an infrared ray among the rays of reflected light from an original and synthesizing the signal obtained from the visual light among the said reflected lights and the inverted said signal to obtain a color picture only. CONSTITUTION:The original 1 is scanned by a halogen lamp 2 and a mirror 3. In turning a filter 5 to transmit an infrared ray, only the infrared ray among the rays of reflected light from the original 1 is projected to the image sensor 6. A color character is lost in the sensor 6 among the black and color characters of the original printed on the white background and only the black character remains. The signal for one original 1 outputted from the sensor 6 is stored in a memory device 7 and printed by a printer 8. In exchanging the filter 5 into the red filter next, the signal of the cyanide and black picture is obtained in the sensor 6. The signal of the memory device 7 is inverted by the inverting circuit 9 to synthesize the cyanide and black signals, only th cyanide signal is left and printed while being overlapped onto the said black picture. Then the filter 5 is exchanged sequentially into the green and the blue filters to apply the similar processing as above.
    • 5. 发明专利
    • FORMATION OF FILM
    • JPS6254083A
    • 1987-03-09
    • JP19440285
    • 1985-09-03
    • MATSUSHITA ELECTRIC IND CO LTD
    • KURAMOTO AKIMASAWATANABE MASANORITANAKA EIICHIROTAKIMOTO AKIOAKIYAMA KOJI
    • C23C16/50G03G5/08G03G5/082
    • PURPOSE:To efficiently form a thin film by generating a high-density hydrogen plasma gas in a plasma forming chamber, introducing the gas into a film forming chamber provided with a substrate through a slit and decomposing a raw gas when the thin film of the decomposition product of the raw gas is formed on the surface of the substrate by glow discharge decomposition. CONSTITUTION:A film forming chamber 2 separated from a plasma forming chamber 1 with a slit 7 is evacuated. Gaseous H2 is introduced into the plasma forming chamber 1 from an inlet 3, gaseous SiH4 is introduced into the film forming chamber 2 from an inlet 4 and the gas pressure is regulated to about 10 Torr. An electric current is passed through the cathode 5 of the plasma forming chamber 1, the cathode is red-heated to emit thermoelectrons, the thermoelectrons are collided with hydrogen molecules by the magnetic field by a permanent magnet 6 and a high-density hydrogen plasma ga is generated. The hydrogen plams gas enters the film forming chamber 2 through the small hole of the slit 7 and an amorphous film of Si generated by the decomposition of the SiH4 in the gas is formed on the surface of an Al substrate 8 at a high rate of formation.