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1. 发明专利

JPH0127591B2 失效
公开(公告)号：JPH0127591B2
公开(公告)日：1989-05-30
申请号：JP6764180
申请日：1980-05-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MYATA YUTAKA , CHIKAMURA TAKAO , SHIBATA TAKUO , FUJIWARA SHINJI
IPC分类号： H01L21/339 , H01L27/146 , H01L29/762 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374

2. 发明专利

JPS63289965A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63289965A
公开(公告)日：1988-11-28
申请号：JP12398587
申请日：1987-05-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , HOTTA SADAKICHI , MIYATA YUTAKA , KOBAYASHI IKUNORI , UNO MITSUHIRO
IPC分类号： G09F9/30 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a semiconductor device for the purpose of composing a liquid crystal image displaying device so that a second conductor layer and facing electrodes are prevented from being shorted and corroded, by using a similar photo-lithographic process to form photosensitive organic resin on the second conductor layer. CONSTITUTION:A first conductor layer 12 is selectively formed on a main surface of a substrate 11, and an insulation thin film layer 13 is interposed therebetween to superpose a semiconductor layer 14 partially on the first conductor layer 12. Further, a second conductor layer 31 is connected directly with the semiconductor layer 14 or connected electrically with it by interposing a third conductor layer 17 therebetween to have a partially superposed part. Next a photosensitive organic resin 41 is formed on the second conductor layer 31. Formation of patterns on the photosensitive organic resin 41 and the second conductor layer 31 is performed by using a similar photo-lithographic process. For example, a gate electrode 12, a silicon nitride insulating film 13, and an amorphous Si semiconductor layer 14 are formed on a glass substrate 11, then the whole surface of the substrate is coated with Al 31. Further a photoresist 41 is formed thereon and the photo-lithographic process is used to form source and drain electrodes 15a, 15b.

3. 发明专利

JPS63140536A PATTERN FORMING METHOD 失效
公开(公告)号：JPS63140536A
公开(公告)日：1988-06-13
申请号：JP28704286
申请日：1986-12-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OOKAWA NORIKO , TAKEDA ETSUYA , CHIKAMURA TAKAO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213
摘要： PURPOSE:To form a pattern without contamination due to reattachment of photoresist on the pattern which has changed in quality, by patterning an Al thin film with a photoresist as a mask, then removing the photoresist, and etching a thin film of a lower layer part with the pattern of the Al thin film as a mask. CONSTITUTION:On an Al thin film 2 (for example, 7000Angstrom film thickness) and an MoSi2 thin film 13 (for example, 1000Angstrom film thickness) on a substrate 1, a photoresist is spread, exposed to light, developed, and baked to obtain a photoresist pattern 4. By using the photoresist pattern 4 as a mask, an Al thin film 2 is subjected to etching by applying a mixed liquid of phosphoric acid and nitric acid of, for example, 25:1 ratio, which is heated at a tempera ture of, for example, 50-60 deg.C. The photoresist is removed with fuming nitric acid, and the pattern 10 of an Al thin film is obtained. Then, with the pattern 10 of the Al thin film as a mask, the MoSi2 thin film 13 is subjected to etching using a mixed liquid of nitric acid, acetic acid and hydrofluoric acid of, for example, 30:10:1 ratio, and a desired pattern 15 of an Al thin film and an MoSi2 thin film is obtained. The Al thin film is necessary to have a specified thickness more than two times the thickness of the lower layer thin film.

4. 发明专利

JPS616861A Photosensor and manufacture thereof 失效
标题翻译：摄影机及其制造
公开(公告)号：JPS616861A
公开(公告)日：1986-01-13
申请号：JP12700984
申请日：1984-06-20
申请人： Matsushita Electric Ind Co Ltd
发明人： OGAWA KAZUFUMI , CHIKAMURA TAKAO
IPC分类号： G01J1/02 , H01L27/148 , H04N5/335 , H04N5/341 , H04N5/3728 , H04N5/374
CPC分类号： H01L27/14831
摘要： PURPOSE:To reduce manufacturing cost largely by integrally forming a photosensor array enabling closely adhesive reading, a read-gate array for reading signal charges read by the photosensor array and a charge transfer element for transferring a read signal onto a single substrate. CONSTITUTION:A plurality of primary sensors in which photosensor arrays 18 into amorphous or polycrystalline regions, read-gates 17 for reading signal charges read by the photosensor arrays into single crystal regions, and charge transfer elements 16 for transferring read signals are arranged and formed integrally onto the amorphous or polycrystalline regions shaped onto a single substrate 1 and semiconductor thin-films 3 consisting of the single crystal regions are arranged in parallel, and read-gates for reading outputs from the charge transfer elements for each primary sensor in succession and the charge transfer elements are formed integrally in the direction vertical to the primary sensor group, thus shaping a closely adhesive reading type photosensor.
摘要翻译：目的：为了降低制造成本，通过整体地形成能够进行紧密粘合读取的光电传感器阵列，用于读取由光电传感器阵列读取的信号电荷的读取门阵列和用于将读取信号传送到单个基板上的电荷转移元件。构成：其中将光电传感器阵列18变成非晶或多晶区域的多个初级传感器，用于将由光电传感器阵列读取的信号电荷读入单晶区域的读取栅极17和用于传送读取信号的电荷转移元件16被一体化地形成形成在单个基板1上的非晶或多晶区域和由单晶区域构成的半导体薄膜3并联布置，并且读取栅极用于连续地读取用于每个主传感器的电荷转移元件的输出和电荷传送元件在与主传感器组垂直的方向上一体地形成，从而成形紧密粘接的读取型光电传感器。

5. 发明专利

JPS60208179A SOLID-STATE IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS60208179A
公开(公告)日：1985-10-19
申请号：JP6533584
申请日：1984-04-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YANO KOUSAKU , CHIKAMURA TAKAO , YONEDA TADANAKA
IPC分类号： H01L27/146 , H01L27/14 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/3728 , H04N5/374
摘要： PURPOSE:To obtain a solid-state image pickup device with high resolution by reading plural photoelectric converting regions into one storage region and transferring its signal at the electric charge transfer function region so as to increase the number of picture elements. CONSTITUTION:A voltage Vacc is applied to a photoconductor 17 through the 3rd electrode 19a at a time to and an electric charge generated by an incident light 22 is stored. Then a strong electric field is fed between the 1st electrode 16 and the 2nd electrode 18 at a time t1 and a negative voltage Vdr is fed to the 3rd electrode 19a and the electric charge stored in the 3rd electrode 19a flows to a diode 11 through the electrode 16. Then a read pulse Vch is fed to the 1st read gate electrode 14 and an electric charge stored in the diode 11 is transferred to a potential 13 being a lower potential by a pulse VTr applied to the gate electrode 12. This electric charge is transferred to an n region with a low potential, and this is repeated and the electric charge is transferred one after another.

6. 发明专利

JPS60189255A Photoelectric conversion element 失效
标题翻译：光电转换元件
公开(公告)号：JPS60189255A
公开(公告)日：1985-09-26
申请号：JP4435384
申请日：1984-03-08
申请人： Matsushita Electric Ind Co Ltd
发明人： CHIKAMURA TAKAO , AOKI YOSHITAKA , YANO KOUSAKU , OOTA YOSHIO
IPC分类号： H04N1/028 , H01L27/146
CPC分类号： H01L27/14665
摘要： PURPOSE:To obtain a photoelectric conversion element of high sensitivity and high S/N ratio of one-dimentional image sensor to be used for a facsimile, etc. by a method wherein a charge transfer device is used for a scanning device, and integrated in one body with a substrate. CONSTITUTION:A photoelectric conversion film 11 and a second substrate 12 containing a charge transfer device are set up on a first substrate 10, and the unit elements of the photoelectric conversion device 11 are connected electrically to the substrate 12 according to wiring electrodes 13. Diodes 18 to store electric charges excited by the photoelectric conversion film 11, and a CCD19 are provided in an Si substrate 17, gate electrodes 20 to read signal electric charges stored in the diodes 18, and gate electrodes 21 to transfer electric charges in the CCD19 are provided. Because the area of the light receiving part of the photoelectric conversion film becomes larger as compared with the area of the single photo diode of the CCD, the device is high sensitivity, and because the CCD is used, spike noise, etc. is not generated, and the device is a high S/N ratio and moreover reading in a high speed can be attained.
摘要翻译：目的：通过将电荷转移装置用于扫描装置的方法，获得用于传真机的一维图像传感器的高灵敏度和高S / N比的光电转换元件，并集成在一个身体与底物。构成：在第一基板10上设置含有电荷转移装置的光电转换膜11和第二基板12，根据布线电极13将光电转换装置11的单位元件与基板12电连接。二极管如图18所示，存储由光电转换膜11激发的电荷，CCD19设置在Si衬底17中，栅电极20读取存储在二极管18中的信号电荷，栅电极21转移CCD19中的电荷提供。因为与CCD的单个光电二极管的面积相比，光电转换膜的光接收部分的面积变大，所以器件具有高灵敏度，并且由于使用了CCD，所以不产生尖峰噪声等，并且该装置具有高S / N比，并且此外可以获得高速读数。

7. 发明专利

JPS6042666B2 失效
公开(公告)号：JPS6042666B2
公开(公告)日：1985-09-24
申请号：JP1098778
申请日：1978-02-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , FUJIWARA SHINJI , FUKAI SHOICHI , TERUI YASUAKI
IPC分类号： H01L27/146 , H01L31/00 , H04N5/30 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374

8. 发明专利

JPS6040232B2 失效
公开(公告)号：JPS6040232B2
公开(公告)日：1985-09-10
申请号：JP4970280
申请日：1980-04-15
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： CHIKAMURA TAKAO , SHIBATA TAKUO , MYATA YUTAKA , FUJIWARA SHINJI , FUKAI SHOICHI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374

9. 发明专利

JPS59211386A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS59211386A
公开(公告)日：1984-11-30
申请号：JP8613083
申请日：1983-05-16
申请人： Matsushita Electric Ind Co Ltd
发明人： CHIKAMURA TAKAO , NAKAYAMA MITSUO , YONEDA TADAO , ISHIKAWA OONORI , UENO ATSUSHI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14665
摘要： PURPOSE:To attain high density for picture elements and high speed by forming MOS transistors (TRs) reading a signal charge on a photoconductive film into a vertical scanning circuit in longitudinal direction. CONSTITUTION:A gate electrode 21 of the MOS TRs forms a row connection with the vertical scanning circuit. Further, a drain section 24 has the opposite conduction to that of a substrate 32 and forms a column connection to a horizontal scanning circuit via a diffusion layer 25 having the same conduction type. Further, a source section 26 has an opposite conductive type as that of the substrate 32 and is connected to a metallic electrode 28. Then, the MOS TRs reading the signal on the photoconductive film into the drain scanned vertically are formed in longitudinal form.
摘要翻译：目的：通过将光电导膜上的信号电荷读取成垂直扫描电路的MOS晶体管（TRs）在纵向方向上获得高密度的图像元素和高速度。构成：MOS TR的栅电极21与垂直扫描电路形成行连接。此外，漏极部分24具有与衬底32相反的导通，并且通过具有相同导电类型的扩散层25形成与水平扫描电路的列连接。此外，源极部分26具有与衬底32相反的导电类型并且连接到金属电极28.然后，将垂直扫描的导电膜上的信号读取到垂直扫描的漏极中的MOS TR形成为纵向形式。

10. 发明专利

JPS5952975A Solid-state image pickup device 失效
标题翻译：固态图像拾取器件
公开(公告)号：JPS5952975A
公开(公告)日：1984-03-27
申请号：JP16463282
申请日：1982-09-20
申请人： Matsushita Electric Ind Co Ltd
发明人： MIYATA YUTAKA , CHIKAMURA TAKAO , FUJIWARA SHINJI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/351 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/30
CPC分类号： H01L27/14665
摘要： PURPOSE:To prevent incidence of flicker phenomenon caused by the difference in the area of picture elements, by changing an applied voltage to the photo conductive film of a solid-state image pickup device at every 1st field and 2nd field, which are interlaced scanned. CONSTITUTION:Since both end parts of gate electrodes 16a, 16b, and 16c are overlapped each other to improve the transfer efficiency of a CCD, the shape of the electrode of a photo conductive film formed on a PSG 17 is changed at every field and a difference in the area of picture elements is produced between A and B fields. By changing the reading voltage value when signal charges collected at every picture element are read in a reading stage at every field, changing the voltage or duty ratio of transfer pulses at every field, and changing the voltage value of pulses impressed upon a transparent electrode to determine the amount of signal charges collected at each picture element at every field, flickering phenomenon caused by the difference in the area of picture elements can be suppressed.
摘要翻译：目的：为了防止像素区域的差异引起的闪烁现象的发生，通过对每隔1段和2场进行隔行扫描的固态摄像装置的光电导膜施加电压。构成：由于栅电极16a，16b和16c的两端部彼此重叠以提高CCD的传输效率，所以形成在PSG17上的光电导膜的电极的形状在每个场改变，并且在A和B场之间产生像素区域的差异。通过在每个场的读取级中读取在每个像素处收集的信号电荷时读取电压值，改变每个场的传输脉冲的电压或占空比，并且将施加在透明电极上的脉冲的电压值改变为确定在每个场中在每个像素处收集的信号电荷的量，可以抑制由图像元素的区域的差异引起的闪烁现象。

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