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1. 发明专利

JP2011103490A Composition for sealing semiconductor, semiconductor device, and process for manufacturing semiconductor device 有权
标题翻译：用于密封半导体器件的半导体器件的组合物和用于制造半导体器件的工艺
公开(公告)号：JP2011103490A
公开(公告)日：2011-05-26
申请号：JP2011018670
申请日：2011-01-31
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： ONO SHOKO , TAKAMURA KAZUO
IPC分类号： H01L21/312 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
CPC分类号： H01L21/76829 , H01L21/02343 , H01L21/02362 , H01L21/3105 , H01L21/76831 , H01L2924/0002 , Y10T428/1073 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a composition for sealing a semiconductor, which enables the formation of a thin resin layer, can prevent the diffusion of a metallic component into a porous interlayer insulating layer, and has excellent adhesion to wiring materials. SOLUTION: A resin having two or more cationic functional groups and having a weight average molecular weight of 2,000 to 100,000 is added to the semiconductor-sealing composition having both a sodium content and a potassium content of 10 ppb by weight or less in terms of the element contents. The composition has a volume average particle size of 10 nm or less as measured by a dynamic light scattering method. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够形成薄树脂层的用于密封半导体的组合物，可以防止金属成分扩散到多孔层间绝缘层中，并且对配线材料具有优异的粘附性。解决方案：将具有两个或更多个阳离子官能团并且具有2,000至100,000重均分子量的树脂加入到钠含量和钾含量为10ppb（重量）以下的半导体密封组合物中元素内容的术语。通过动态光散射法测定，该组合物的体积平均粒径为10nm以下。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2006278506A Method for manufacturing porous film and interlayer insulating film, and semiconductor material and semiconductor device 有权
标题翻译：制造多孔膜和层间隔绝缘膜的方法以及半导体材料和半导体器件
公开(公告)号：JP2006278506A
公开(公告)日：2006-10-12
申请号：JP2005092480
申请日：2005-03-28
申请人： Hitachi High-Technologies Corp , Mitsui Chemicals Inc , Rohm Co Ltd , Sanyo Electric Co Ltd , Ulvac Japan Ltd , ローム株式会社 , 三井化学株式会社 , 三洋電機株式会社 , 株式会社アルバック , 株式会社日立ハイテクノロジーズ
发明人： TAKAMURA KAZUO , TANAKA HIROBUMI , OIKE SHUNSUKE , MURAKAMI MASAMI , OKU YOSHIAKI , GOTO TAKASHI , ONO TETSUO , FUJII NOBUTOSHI
IPC分类号： H01L21/316 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a porous film which excels in hydrophobic property and mechanical strength and can be appropriately used for optical functional materials, electronic functional materials, etc.
SOLUTION: The porous film including Si-O bond is subjected to two processings: (A) plasma processing wherein it is exposed at -50 to 450°C and under 0.05-150 Pa, in a plasma atmosphere containing one kind or two or more kinds of among Ar, Kr, Xe, Ne, He, O
2 , O
3 , H
2 , N
2 , H
2 O, N
2 O and NH
3 under an atmosphere containing no harogen-containing gas, and (B) contact processing wherein an organic silicon compound is brought into contact.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供疏水性和机械强度优异的多孔膜，并且可以适用于光学功能材料，电子功能材料等。解决方案：包括Si-O键的多孔膜进行两个处理：（A）在包含Ar，Kr，Xe，Ne中的一种或两种以上的等离子体气氛中，在-50〜450℃，0.05〜150Pa下进行等离子体处理，He，O 2 ，O 3 ，H 2 ，N 2 SB> O，N 2 O和NH 3 ，和（B）接触有机硅化合物的接触处理。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005272188A Method for manufacturing hydrophobized porous silica, hydrophobized porous silica, and hydrophobized porous silica thin film 审中-公开
标题翻译：疏水多孔二氧化硅，疏水多孔二氧化硅和疏水多孔二氧化硅薄膜的制造方法
公开(公告)号：JP2005272188A
公开(公告)日：2005-10-06
申请号：JP2004085809
申请日：2004-03-23
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： TANAKA HIROBUMI , TAKAMURA KAZUO , OIKE SHUNSUKE , MURAKAMI MASAMI
IPC分类号： C01B33/12 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To obtain a porous silica and a porous silica thin film which have a low dielectric constant and high mechanical strength, for example, such ones as do not damage the electric connection reliability of a semiconductor device when used as a material for use in an interlayer insulator in the semiconductor device.
SOLUTION: The manufacturing method, instead of the step of treating by heat in an vacuum or in an inert atmosphere or of firing in an oxidative atmosphere, comprises the steps of the heating treatment, the firing and the successive hydrophobization treatment. This method can give a hydrophobic porous silica which has little residues of such components affecting a bad influence on a semiconductor device as the surfactant for forming the pores, and which has a high void content and a low dielectric constant and also can give easily a thickened porous silica thin film on account of the easy control over the film thickness.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了获得具有低介电常数和高机械强度的多孔二氧化硅和多孔二氧化硅薄膜，例如不会损坏半导体器件的电连接可靠性，当用作用于半导体器件中的层间绝缘体的材料。解决方案：制造方法代替在真空或惰性气氛中加热或在氧化气氛中烧成的步骤，包括加热处理，烧制和连续疏水化处理的步骤。该方法可以得到疏水性多孔二氧化硅，其几乎不影响作为形成孔的表面活性剂对半导体器件的不良影响的残留物，并且具有高空隙率和低介电常数，并且还可以容易地增加多孔二氧化硅薄膜由于易于控制膜厚度。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005116830A Porous silica, manufacturing method thereof and application thereof 审中-公开
标题翻译：多孔二氧化硅，其制造方法及其应用
公开(公告)号：JP2005116830A
公开(公告)日：2005-04-28
申请号：JP2003349978
申请日：2003-10-08
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： TAKAMURA KAZUO , OIKE SHUNSUKE , MURAKAMI MASAMI , TANAKA HIROBUMI
IPC分类号： C01B33/12 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of porous silica suitably used for an inter-layer insulation film or the like made of a semiconductor material, that is, to provide the manufacturing method of the porous silica the organic compound contents of which are remarkably reduced, and to provide the semiconductor material using the obtained porous silica and a semiconductor device using the semiconductor material.
SOLUTION: In the manufacturing method of the porous silica, a porous silica precursor is baked in an environment including H
2 O to eliminate the organic compound included in the precursor. Thus, the manufacturing method can provide the porous silica the organic compound contents of which are remarkably reduced.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供适合用于由半导体材料制成的层间绝缘膜等的多孔二氧化硅的制造方法，即提供多孔二氧化硅的制造方法，将有机化合物含量其显着减少，并且使用所获得的多孔二氧化硅和使用该半导体材料的半导体器件提供半导体材料。解决方案：在多孔二氧化硅的制造方法中，将多孔二氧化硅前体在包括H 2 SB 2 O的环境中烘烤以除去前体中包含的有机化合物。因此，制造方法可以提供其有机化合物含量显着降低的多孔二氧化硅。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2003268356A METHOD FOR MANUFACTURING WATER-REPELLENT POROUS SILICA FILM, WATER-REPELLENT POROUS SILICA FILM OBTAINED BY THE SAME AND ITS USE 审中-公开
公开(公告)号：JP2003268356A
公开(公告)日：2003-09-25
申请号：JP2002077109
申请日：2002-03-19
申请人： MITSUI CHEMICALS INC
发明人： TANAKA HIROBUMI , TAKAMURA KAZUO , OIKE SHUNSUKE , KUBOTA TAKESHI , MURAKAMI MASAMI
IPC分类号： C01B33/12 , C09K3/18 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To obtain a water-repellent porous silica film which has a uniform pore size applicable to an optical functional material and an electronic functional material, can retain water-repellency at a process temperature of 400°C or high and has enhanced film strength and a reduced dielectric constant. SOLUTION: A method for manufacturing the water-repellent porous silica film comprises subjecting a porous silica film having a uniform pore size to a water-repellent treatment using methylsilanes represented by the general formula: Si(CH 3 ) n H 4-n (wherein n=1-4) and/or methoxysilanes represented by the general formula: Si(CH 3 O) n H 4-n (wherein n=1-4) by a discharge decomposition method or a photo-CVD method by UV photo-irradiation. COPYRIGHT: (C)2003,JPO

6. 发明专利

JP2003238140A PRODUCTION METHOD FOR SILYLATED POROUS SILICA 审中-公开
公开(公告)号：JP2003238140A
公开(公告)日：2003-08-27
申请号：JP2002034380
申请日：2002-02-12
申请人： MITSUI CHEMICALS INC
发明人： TAKAMURA KAZUO , OIKE SHUNSUKE , KUBOTA TAKESHI , KURANO YOSHITO , MURAKAMI MASAMI
IPC分类号： C01B33/12
摘要： PROBLEM TO BE SOLVED: To provide a production method for a porous silica in which the silanol group of silica is efficiently silylated and thereby, a silylated porous silica having uniform mesopores can be obtained. SOLUTION: The production method for the silylated porous silica having uniform mesopores is characterized by reacting an organic silicone compound with an organic-inorganic composite comprising a surfactant and a siloxane compound in the presence of the surfactant, and then removing the surfactant. COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2008251774A Method for manufacturing porous silica film 有权
标题翻译：制造多孔硅胶膜的方法
公开(公告)号：JP2008251774A
公开(公告)日：2008-10-16
申请号：JP2007090327
申请日：2007-03-30
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： TAKAMURA KAZUO , TANAKA HIROBUMI , MURAKAMI MASAMI
IPC分类号： H01L21/312 , C08J9/26 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing porous silica and a porous silica film which exhibit both low relative permittivity and high mechanical strength and can be optimally used for an optical functional material, an electronic functional material or the like and to provide a method for manufacturing an interlayer insulating film, a material for semiconductor and a semiconductor device using the porous silica film.
SOLUTION: Bonding state of atoms in the porous silica film which contains an alkyl group having a Si-O bond as a main skeleton is obtained by determining the wave number of a specific absorption peak attributable to the silica film surface by an infrared absorption spectrum. In this manner, the porous silica film which exhibits both low relative permittivity and high mechanical strength and is useful as an optical functional material, an electronic functional material or the like can be manufactured with a high reproducibility.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造多孔二氧化硅和多孔二氧化硅薄膜的方法，其具有低相对介电常数和高机械强度，并且可以最佳地用于光学功能材料，电子功能材料等，以及提供一种用于制造层间绝缘膜的方法，半导体材料和使用多孔二氧化硅膜的半导体器件。解决方案：通过用红外线测定归因于二氧化硅膜表面的特定吸收峰的波数，得到含有具有Si-O键的烷基作为主要骨架的多孔二氧化硅膜中原子的键合状态吸收光谱。以这种方式，可以以高再现性制造出具有低相对介电常数和高机械强度且可用作光学功能材料，电子功能材料等的多孔二氧化硅膜。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008117887A Laminated structure and its manufacturing mehod, and semiconductor device using laminated structure 有权
标题翻译：层压结构及其制造方法和使用层压结构的半导体器件
公开(公告)号：JP2008117887A
公开(公告)日：2008-05-22
申请号：JP2006298750
申请日：2006-11-02
申请人： Mitsui Chemicals Inc , Sanyo Electric Co Ltd , 三井化学株式会社 , 三洋電機株式会社
发明人： TAKAMURA KAZUO , TANAKA HIROBUMI , SHISHIDA YOSHIKANE
IPC分类号： H01L21/316 , H01L21/312 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminated structure excellent in the adhesion between a low permittivity first insulating film which can be satisfactorily used for a semiconductor device and a second insulating film which can be satisfactorily used for a Cu diffusion prevention and a stopper at the time of etching, to provide a laminated structure manufactured by the method for manufacturing, and to provide a semiconductor device using the laminated structure. SOLUTION: The method for manufacturing the laminated structure comprises a step (A) of forming the first insulating film including silicon, a step (A) of laminating the second insulating film on the first insulating film, and a step (B) of irradiating an ultraviolet beam under a nonoxidizing atmosphere. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造层压结构优良的方法，该叠层结构在可以令人满意地用于半导体器件的低介电常数的第一绝缘膜和可以令人满意地用于Cu的第二绝缘膜之间的粘合性优异扩散防止和蚀刻时的塞子，以提供通过制造方法制造的层叠结构，并提供使用该层压结构的半导体器件。解决方案：层叠结构的制造方法包括：形成包含硅的第一绝缘膜的工序（A），将第二绝缘膜层叠在第一绝缘膜上的工序（A）和工序（B）在非氧化气氛下照射紫外线。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006073799A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2006073799A
公开(公告)日：2006-03-16
申请号：JP2004255462
申请日：2004-09-02
申请人： Mitsui Chemicals Inc , Rohm Co Ltd , Ulvac Japan Ltd , ローム株式会社 , 三井化学株式会社 , 株式会社アルバック
发明人： OKU YOSHIAKI , FUJII YOSHITOSHI , TAKAMURA KAZUO
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L21/76826 , H01L21/2855 , H01L21/32051 , H01L21/76802 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L21/76843 , H01L2221/1047
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a highly reliable wiring structure by enhancing adhesion between a dielectric thin film and a conductor layer. SOLUTION: This method for manufacturing a semiconductor device comprises a step for performing the pretreatment of the surface of a dielectric thin film formed with a large number of voids around a skeleton principally composed of an Si-O bond by supplying reactive plasma, a step for forming a conductive film on the surface of the pretreated dielectric thin film by sputtering, and a step for touching gas containing at least one kind of tetramethylcyclotetrasiloxane (TMCTS), hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) molecules to the surface of the dielectric thin film prior to the pretreatment process. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过增强电介质薄膜和导体层之间的粘合力来提供具有高可靠性布线结构的半导体器件。解决方案：这种制造半导体器件的方法包括以下步骤：通过提供反应性等离子体对主要由Si-O键构成的骨架围绕形成有大量空隙的电介质薄膜的表面进行预处理，用于通过溅射在预处理的介电薄膜的表面上形成导电膜的步骤，以及将至少一种四甲基环四硅氧烷（TMCTS），六甲基二硅氮烷（HMDS）和三甲基氯硅烷（TMCS））分子的气体接触到在预处理过程之前的介电薄膜。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2003089514A METHOD FOR PRODUCING POROUS SILICA FILM WITH SMOOTH SURFACE 审中-公开
公开(公告)号：JP2003089514A
公开(公告)日：2003-03-28
申请号：JP2001276514
申请日：2001-09-12
申请人： MITSUI CHEMICALS INC
发明人： MURAKAMI MASAMI , TAKAMURA KAZUO , OIKE SHUNSUKE , KUBOTA TAKESHI , KURANO YOSHITO
IPC分类号： B05D7/24 , C01B33/12 , C09D183/02 , C09D183/04
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a porous silica film capable of giving a porous silica film applicable to an optical functional material and an electronic functional material, having uniform pores and excellent in smoothness of the film surface. SOLUTION: In the method for producing a porous silica film, a substrate is coated in a humid atmosphere with a coating liquid obtained by partially hydrolyzing and dehydration-condensing alkoxysilanes in the presence of a surfactant.

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