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    • 2. 发明专利
    • Simulator for casting process and judging method therefor
    • 铸造工艺模拟器及其评估方法
    • JP2003033864A
    • 2003-02-04
    • JP2001217284
    • 2001-07-17
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • OHIRA TATSUYAUKAI OSAMUNOTAKI TOMOHIROSHIMOBATAKE YUKIRO
    • G01N25/02B22C9/00B22C9/06B22D46/00
    • PROBLEM TO BE SOLVED: To provide a simulator for casting process and a judging method therefor capable of making an optimum casting plan based on a new evaluation index for casting defects.
      SOLUTION: An analytical technique for segregation-convection based on a segregation-convection solidification model and an analytical technique for crystal growth based on nucleation-crystal-growth model are simultaneously used every time step. Concentration, speed of flow, temperature, solidus rate, solidification structure, crystal orientation, dendrite arm spacing, and nucleation site are simultaneously output. The existence of casting defects is estimated from the index of casting defects which has been calculated based on them. Not only by the aforementioned casting process simulator, but also from the calculated concentration and temperature by a casting process simulation based on an arbitrary casting plan, the freckle defect evaluation index (Rayleigh Number), in which the segregation and flow of molten metal are considered, and the defect evaluation index for foreign crystal, in which the nucleation mechanism of foreign crystal being considered, are simultaneously evaluated so as to judge the quality of the casting plan.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:提供一种用于铸造过程的模拟器及其判断方法,其能够基于用于铸造缺陷的新的评估指标来制定最佳铸造计划。 解决方案:基于分离对流固化模型的分离对流分析技术和基于成核 - 晶体生长模型的晶体生长分析技术在每个时间步骤中同时使用。 同时输出浓度,流速,温度,固相率,固化结构,晶体取向,枝晶臂间距和成核位点。 铸造缺陷的存在是根据已经根据它们计算出的铸造缺陷指数来估计的。 不仅通过上述铸造工艺模拟器,还通过基于任意铸造计划的铸造工艺模拟计算的浓度和温度,考虑熔融金属的偏析和流动的雀斑缺陷评估指数(Rayleigh Number) ,并且同时评价其中考虑了外来晶体的成核机理的外来晶体的缺陷评价指标,以判断铸造计划的质量。
    • 3. 发明专利
    • METAL OXIDE FILM FOR SUPPRESSION OF SCALE ADHESION
    • JP2001073190A
    • 2001-03-21
    • JP24425299
    • 1999-08-31
    • MITSUBISHI HEAVY IND LTD
    • OHIRA TATSUYAINOUE YUKIHIKOMURATA KAZUTOYOMURAYAMA JIRO
    • F03G4/00C25D11/38
    • PROBLEM TO BE SOLVED: To lessen and prevent the adhesion of scale, such as magnetite, in water in atomic power, thermal power, chemical plants, etc., by forming metal oxidized films which have crystal structures different from the scale, i.e., cubic type crystals, have face bearings to make the oxygen arrangement point- asymmetrical and of which the metal atom species are chromium. SOLUTION: These metal oxidized film materials on apparatus surfaces are metal oxidized films which have the crystal structure different from the scale particle, has the face bearing to make the oxygen arrangement point- asymmetrical and of which the metal atom species are the chromium or titanium. If the metal oxidized films satisfying these conditions are formed, the energy barriers by the coulomb repulsion between the scale film boundary oxygen are easily formed and the iron oxide scale adhesion is suppressed. If the surfaces of the plant apparatus are coated with chromium, and the chromium is subjected to an oxidation treatment, the chromium oxide films (hexagonal crystals) are formed thereon. The adhesion of the scale of the iron oxide, etc., may be lessened and prevented by these films.
    • 4. 发明专利
    • APPARATUS FOR ESTIMATING ADHESION ENERGY OF INTERFACE OF DIFFERENT MATERIALS
    • JPH11101794A
    • 1999-04-13
    • JP27679497
    • 1997-10-09
    • MITSUBISHI HEAVY IND LTD
    • OHIRA TATSUYAINOUE YUKIHIKO
    • G01N33/20G01N3/02G01N19/04
    • PROBLEM TO BE SOLVED: To theoretically evaluate the presence of adhesion energy or adhesiveness by estimating the presence of adhesiveness and the intensity of adhesion from the total energy distribution to the distance between the surfaces of two materials. SOLUTION: A first reading means 11 reading the compsn. of a given objective material and the crystal structure thereof in an operation system 14, a reading means 12 determining all of mutually acting energy parameters between two atoms of the same kind or a different kind related to the objective material to read them in the operation system 14, a third reading means 13 reading material interface atomic structure model data, an operation means 14 calculating the material interface total energy to the distance between the surfaces of materials on the basis of the sum total of mutual energies between two atoms of the same kind or a different kind and an evaluation means 15 evaluating adhesion energy from the total energy distribution are provided. Differently from a conventional method, if the crystal structure and compsn. of a material are cleared even if the adhesion strength between a different kind of materials is not actually measured, the adhesion energy corresponding to adhesion strength or the presence of adhesiveness can be theoretically evaluated.
    • 5. 发明专利
    • SIMULATION METHOD FOR FILM FORMATION AND ITS DEVICE
    • JPH09279340A
    • 1997-10-28
    • JP9538496
    • 1996-04-17
    • MITSUBISHI HEAVY IND LTD
    • OHIRA TATSUYA
    • C01B33/02C23C14/54
    • PROBLEM TO BE SOLVED: To estimate an accurate film forming rate and physical properties in the film forming processes of an amorphous silicon thin film. SOLUTION: This simulation method for film formation includes the following processes. In a first process, incident active seeds supplied form a film forming atmosphere, the temp. of the incident active seeds and the substrate temp. are determined. In a second process, movement of one atom in the surface reaction and deposition process of lots of incident active seeds on a substrate is traced at certain intervals of time by using a molecular dynamic method based on the atomic force expression of the silicon-hydrogen system under the determined conditions to obtain the coordinate and velocity of each atom. Then the film thickness produced by deposition of a part of the incident active seeds, the number of whole silicon atoms in the deposited film, the number of whole hydrogen atoms, the number of quadridentate silicon atoms in the deposited film, the number of silicon atoms bonded to one hydrogen atom, and the number of silicon atoms bonded to two hydrogen atoms are calculated based on the obtd. coordinate of atoms. Then the film forming rate and physical property in the film forming process (proportion of defects, hydrogen content and SiH2 /SiH ratio) are obtd. In a third process, the obtd. film forming rate and physical properties of the film forming process are outputted.
    • 6. 发明专利
    • Method and apparatus for estimating normal temperature joined state
    • 用于估计正常温度接合状态的方法和装置
    • JP2005257357A
    • 2005-09-22
    • JP2004066831
    • 2004-03-10
    • Fuji Xerox Co LtdMitsubishi Heavy Ind Ltd三菱重工業株式会社富士ゼロックス株式会社
    • OHIRA TATSUYAGOTO TAKAYUKIYAMADA TAKAYUKIYAMAZAKI YOSHIFUMI
    • G01N33/20G01N33/00
    • PROBLEM TO BE SOLVED: To provide a normal temperature joined state estimating method capable of estimating a state of joined strength or the like at the joining of a material, having roughness of nm to μm order for the surface in a pressure contact state at the normal temperature, and to provide an apparatus therefor.
      SOLUTION: The normal temperature joined state apparatus is equipped with a means 111 of determining an interaction energy function parameter between two atoms, on the basis of composition; a means 112 of determining an interface atom structure model, based on a crystal structure; a means 113 of calculating internal stress energy, based on a macroelastic energy function from surface roughness; a surface roughness wavelength; the Poisson's ratio and Young's modulus; a means 114 of calculating the interfacial interaction energy corresponding to a surface-to-surface distance based on the function and the model; a means 115 of calculating the ideal jointing strength from the energy, corresponding to the distance; a means 116 of calculating adhesion energy from the energy, corresponding to the distance; and a means 117 of deciding normal temperature jointing possibility, from the magnitude relation of the adhesion energy and the internal stress energy.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种能够估计在接合材料时的接合强度等的状态的常温接合状态估计方法,其中压敏接触状态的表面具有nm至μm的粗糙度 在常温下,并提供一种装置。 解决方案:常温接合状态设备配备有基于组成确定两个原子之间的相互作用能函数参数的装置111; 基于晶体结构确定界面原子结构模型的装置112; 基于表面粗糙度的宏观能量函数计算内部应力能的手段113; 表面粗糙度波长; 泊松比和杨氏模量; 基于功能和模型计算对应于表面到距离的界面相互作用能量的装置114; 计算与能量相对应的能量的理想接合强度的装置115; 计算对应于距离的能量的附着能的装置116; 以及从附着能和内部应力能的大小关系决定常温接合可能性的装置117。 版权所有(C)2005,JPO&NCIPI
    • 7. 发明专利
    • Strut structure of axial-flow turbine
    • 轴流涡轮机的结构
    • JP2004100615A
    • 2004-04-02
    • JP2002265382
    • 2002-09-11
    • Mitsubishi Heavy Ind Ltd三菱重工業株式会社
    • OHIRA TATSUYASUGISHITA HIDEAKITAKEISHI KENICHIRO
    • F01D9/00F01D25/16F01D25/30
    • PROBLEM TO BE SOLVED: To restrain loss resulting from a strut extending in an operation fluid of an axial-flow turbine low in either of cases with rated load or partial load. SOLUTION: The strut 20a extends to cross a flow of the operation fluid of the axial-flow turbine. The strut 20a is separated into a front part 21 and a rear part 22. The angle of the rear part is not changeable but the angle of the front part can be adjusted around an extending axial line. The front part 21 changes its angle to face the flow of the operation fluid. Thus, a section area shape of the strut 20a becomes a wing shape with a back surface and a ventral surface and the operation fluid smoothly flows along the wing shape without causing peeling. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:为了抑制在额定负载或部分负载的情况下的轴流涡轮机的操作流体中延伸的支柱所引起的损失低。 解决方案:支柱20a延伸以横穿轴流涡轮机的操作流体的流动。 支柱20a被分离成前部21和后部22.后部的角度是不可改变的,但是前部的角度可以围绕延伸的轴线调节。 前部21改变其角度以面对操作流体的流动。 因此,支柱20a的截面形状变成具有后表面和腹面的翼状,并且操作流体沿翼形平滑地流动而不会发生剥离。 版权所有(C)2004,JPO