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1. 发明专利

JP2000353804A SEMICONDUCTOR DEVICE AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JP2000353804A
公开(公告)日：2000-12-19
申请号：JP16578199
申请日：1999-06-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , MARUYAMA TAKAHIRO , SAKAMORI SHIGENORI , TERATANI AKIYOSHI , OGINO MASARU , OMI KAZUYUKI , IRIE YUZO
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/3213 , H01L29/423 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To enable a semiconductor device which is equipped with a gate electrode of multilayered structure to be improved in reliability. SOLUTION: A gate electrode 7 is equipped with a polycrystalline silicon layer 3, a barrier layer 4, and a metal layer 5. For instance, the metal layer 5 is formed of W, and the barrier layer 4 is formed of RuO2. When the gate electrode 7 is formed, the metal layer 5 and the barrier 4 are etched, using at least either the barrier layer 4 or the polycrystalline silicon layer 3 as an etching stopper.

2. 发明专利

JPH11162938A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11162938A
公开(公告)日：1999-06-18
申请号：JP32639697
申请日：1997-11-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： OMI KAZUYUKI , IIDA SATOSHI , YASUDA TORU , KIMURA HAJIME , OGINO MASARU , KUSUMI YOSHIHIRO , TAWARA KENJI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that can form a metal silicide film with a high melting point with a desired width. SOLUTION: This method provides a semiconductor device where a titanium silicide film 2 formed on a semiconductor substrate 1 is dry-etched and patterned using a hard mask 10a. Since nitrogen ions are present in the atmosphere during dry etching of the titanium silicide film 2, a deposited film 12 is formed with a compound of titanium and nitrogen on the sidewall of the titanium silicide film 2.

3. 发明专利

JPH10335314A PLASMA PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD 失效
公开(公告)号：JPH10335314A
公开(公告)日：1998-12-18
申请号：JP14760197
申请日：1997-06-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGINO MASARU , YONEKURA KAZUMASA , KIMURA HAJIME , SAKAMORI SHIGENORI
IPC分类号： H05H1/46 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To effectively cancel charge-up proceeding for a period of turn-on of microwaves, for a period of turn-off of the microwaves by a method wherein plasma generated by microwaves and magnetic fields is radiated to a sample arranged vertically to a specific direction. SOLUTION: Microwaves (pulse μ waves) 19 pass from a μ waves power source 80 through a wave guide and are introduced to a chamber via an introduction window 3. Corresponding to turn-on/off of the pulse μ waves 19, a current flowing in a main coil 4a is increased or decreased. Since a magnetic field is applied to the chamber by making a main coil current flowing, an ECR face 5 exists in a plasma generating chamber 1 for a period of turn-on of the pulse μ waves 19, to generate ECR plasma. The ECR plasma is conveyed to a wafer 7 installed on a stage 6. While, the ECR face 5 does not exist in the plasma generating chamber 1 for a period of turn-off of the pulse μwaves 19.

4. 发明专利

JP2002141328A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002141328A
公开(公告)日：2002-05-17
申请号：JP2000337471
申请日：2000-11-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGINO MASARU
IPC分类号： H01L21/28 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a high-selectivity etching of a base film can be performed by preventing the decrease in the selectivity because of the existence of a plasma SiON film as an anti-reflection film in an OE(over-etching) step. SOLUTION: With respect to the method for manufacturing a semiconductor device in which a tungsten silicide film 3 and a doped polysilicon film 4 as films to be etched on a gate oxide film 5 as a base film are provided with mask material composed of several layers of a plasma SiON film 1 and a TEOS film 2 on themselves and are etched, the plasma SiON film 1 as the uppermost layer of the mask material is removed before performing over- etching.

5. 发明专利

JP2000223472A SEMICONDUCTOR PRODUCTION SYSTEM AND PRODUCTION METHOD EMPLOYING THE SAME 失效
公开(公告)号：JP2000223472A
公开(公告)日：2000-08-11
申请号：JP2716699
申请日：1999-02-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGINO MASARU
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor production system and a production method employing it in which yield can be increased by reducing etching reaction products deposited on the semiconductor production system. SOLUTION: A semiconductor production system comprises a lower electrode 10 disposed in a processing container 12, an upper electrode 13 disposed oppositely to the lower electrode 10 in a processing container 12, and power supply sections 14, 15 for applying high frequency power, respectively, to the electrodes 13, 10. The semiconductor production system further comprises a coiled inductively coupled antenna 17 formed on the outer circumference of the processing container 12 between the upper and lower electrodes 13, 10, and an auxiliary power supply section 18 for applying high frequency power to the inductively coupled antenna 17 and generating plasma in the processing container 12.

6. 发明专利

JPH10150025A PLASMA REACTOR 失效
公开(公告)号：JPH10150025A
公开(公告)日：1998-06-02
申请号：JP30914196
申请日：1996-11-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGINO MASARU , MARUYAMA TAKAHIRO
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma reactor which reduces abnormalities in the change up shape at the time of dry etching and can extend etching parameters for improving etching performance such as uniformity and workability. SOLUTION: An RF power periodically alters. One cycle is composed of a first and a second sub-cycles 25 and 26 of different frequency. The frequency of the RF power in the first sub-cycle 25 is higher than that of the second sub-cycle. Accumulation of change caused in the first sub-cycle 25 in which a high-frequency RF power is applied can be reduced in the second sub-cycle to which a low-frequency RF power is applied. Reduction in etching rate which is a problem in the case of application of only a low-frequency RF power can be also compensated by application of the high-frequency RF power in the first sub-cycle 25.

7. 发明专利

JPH1079392A MANUFACTURE OF WIRING LAYER OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1079392A
公开(公告)日：1998-03-24
申请号：JP23424096
申请日：1996-09-04
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGINO MASARU
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/3213 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide the manufacture of a semiconductor device capable of reducing the abnormality of a charge-up shape due to the dry etching of the wiring layer of the semiconductor device. SOLUTION: In the dry etching process of the wiring layer having a first wiring pattern region 14, in which intervals among wirings are set in approximately 0.35-0.5μm, and a second wiring pattern region 15, in which intervals among the wirings of a wiring pattern are made larger than the first wiring pattern region, the wiring layer is formed while a substrate exposed region 18, in which the surface of a silicon substrate 4 is exposed, is set in 10% or more of the area of the surface of the silicon substrate.

8. 发明专利

JPH08172097A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08172097A
公开(公告)日：1996-07-02
申请号：JP31483094
申请日：1994-12-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： FUJIWARA NOBUO , OGINO MASARU
IPC分类号： H01L21/3213 , H01L21/3205 , H01L23/52
摘要： PURPOSE: To prevent an increase in the resistance value of an Al wiring or a disconnection of the Al wiring, which is generated after a heat treatment of the Al wiring, from being generated by a method wherein a sidewall protective film consisting of an SiO2 film or an SiN film is provided only on the sidewalls of the Al wiring. CONSTITUTION: An Al wiring is formed and thereafter, a protective film 9a consisting of an SiO2 film or an SiN film is formed in such a way as to cover the Al wiring. The temperature of the film formation is set at such a temperature that an electro-migration is not generated so as to prevent the electro- migration from being caused simultaneously with the film formation. After that, the film 9a is anisotropecally etched and the film 9a is left only on the sidewall parts of the Al wiring to form a sidewall protective film 9b. After the film 9b is formed, the Al wiring is heat-treated. Thereby, the generation of a deficit defect in the Al wiring can be prevented and an increase in the resistance of the Al wiring or a disconnection of the Al wiring can be prevented from being generated.

9. 发明专利

JPH07235523A PLASMA REACTOR 失效
公开(公告)号：JPH07235523A
公开(公告)日：1995-09-05
申请号：JP2799294
申请日：1994-02-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： MUKAI TAKAO , IIDA SATOSHI , TERATANI AKIYOSHI , OGINO MASARU , YOKOI TAKAHIRO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To etch away even a deposited reaction product adherently deposited on a region hardly irradiated with plasma or not irradiated with the same at all. CONSTITUTION:In order to dry-cleaning up an insulating member 19 and wafer clamps 13 for avoiding the abnormal discharge of a stage electrode 2, the insulating member 19 and the wafer clamps 13 are to be shifted so as to expose the parts hidden by these elements 19 and 13 in a plasma producing region.

10. 发明专利

JP2003151914A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：JP2003151914A
公开(公告)日：2003-05-23
申请号：JP2001344910
申请日：2001-11-09
申请人： MITSUBISHI ELECTRIC CORP
发明人： OGINO MASARU
IPC分类号： H01L21/3065 , H01L21/027 , H01L21/266
摘要： PROBLEM TO BE SOLVED: To improve the yield of a device by preventing scattering in a resist curing layer, and to improve the maintenance of an ashing chamber. SOLUTION: The manufacturing method includes a process for selectively implanting ions on a semiconductor substrate 11 by a photoresist 12 used as a resist mask, a process for forming resist 14 by performing a photomechanical process by means of the inverting mask of an implantation pattern, after ion implantation to cover a portion that is subjected to ion implantation, a process for removing a resist-curing layer 13 that is formed by ion implantation by etching, and a process for carrying out ashing, after the resist-curing layer 13 is removed.

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