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1. 发明专利

JPH11265934A FORMING METHOD OF CONNECTING PART 失效
公开(公告)号：JPH11265934A
公开(公告)日：1999-09-28
申请号：JP6584298
申请日：1998-03-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAWARA KENJI
IPC分类号： H01L21/768 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To prevent etching residues from being left and a tact time from being elongated when a metal wiring is patterned by a method wherein a first and a second barrier metal film located at the base of a connection hole are made equal to each other in thickness by etching. SOLUTION: A first metal wiring 9 is formed on a semiconductor substrate 1 through the intermediary of an insulating film 3, and a second and a third metal wiring, 16 and 23, are successively laminated through the intermediary of interlayer insulating films 10 and 17 respectively. A contact hole 4 provided penetrating through the insulating film 3 is filled with a barrier metal film 5a and a first metal film 6a. A viahole 11 provided penetrating through the interlayer insulating film 10 is filled up with a barrier metal film 12a and a second metal film 13a The barrier metal films 5a and 5b (or 12a, 12b) are equal to each other in thickness and formed on the inner wall and base of the contact hole being ensured of thickness large enough to have an effect that a barrier metal usually has.

2. 发明专利

JPH10209116A ETCHING DEVICE AND ETCHING END POINT DETECTING METHOD 失效
公开(公告)号：JPH10209116A
公开(公告)日：1998-08-07
申请号：JP844097
申请日：1997-01-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAWARA KENJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a dry etching device where the bloom and corrosion on the surface of a window are difficult to occur. SOLUTION: A distance between a detection window 7 and a plasma in an etching chamber 1 is kept large by an extension port 14. Etching gas or a reactive product which is to intrude into the extension port 14 is discharged to an outer part and quantity intruded into the extension port 14 is reduced. The inert gas of N2 ejected from a gas introduction port 19 is sprayed on the inner face of the detection window 7. Etching gas is prevented from arriving at the inner face of the detection window 7. When it is once adhered to the inner face, it is torn off by inert gas. Etching gas is discharged to the outer part of the extension port 14 in accordance with flow where gas ejected from the gas introduction port 19 is speedily discharged from the extension port 14.

3. 发明专利

JP2001118927A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
公开(公告)号：JP2001118927A
公开(公告)日：2001-04-27
申请号：JP30068199
申请日：1999-10-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAWARA KENJI , YOSHIKAWA KAZUNORI , YOKOI TAKAHIRO , TERATANI AKIYOSHI
IPC分类号： H01L21/311 , H01L21/3205 , H01L21/3213 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which provides sure electrical connection for metal wiring. SOLUTION: A silicon oxide film 3 is formed so as to cover a polysilicon plug 4. A hole 5a of bowing shape is formed. A barrier metal 6 and a metal film 7 are formed, and prescribed anisotropic etchings are sequentially performed. Under RIE-lag effect, the etching rate of the barrier metal 6, positioned between the side surface of hole 5a and the metal film 7, is lower than that of barrier metal at other part, no longer resulting in no surface of the polysilicon plug 4 being exposed.

4. 发明专利

JPH11162938A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11162938A
公开(公告)日：1999-06-18
申请号：JP32639697
申请日：1997-11-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： OMI KAZUYUKI , IIDA SATOSHI , YASUDA TORU , KIMURA HAJIME , OGINO MASARU , KUSUMI YOSHIHIRO , TAWARA KENJI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device that can form a metal silicide film with a high melting point with a desired width. SOLUTION: This method provides a semiconductor device where a titanium silicide film 2 formed on a semiconductor substrate 1 is dry-etched and patterned using a hard mask 10a. Since nitrogen ions are present in the atmosphere during dry etching of the titanium silicide film 2, a deposited film 12 is formed with a compound of titanium and nitrogen on the sidewall of the titanium silicide film 2.

5. 发明专利

JPH10209124A DRY ETCHING METHOD 失效
公开(公告)号：JPH10209124A
公开(公告)日：1998-08-07
申请号：JP843897
申请日：1997-01-21
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAWARA KENJI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a through hole superior in anisotropic form without etching a titanium nitride film formed below an interlayer oxide film. SOLUTION: In a first stage, the mixed gas of C4 F8 /O2 with the ratio of 1:1 is used and pressure 1mTorr, RF substrate bias power 700W and microwave power 1500W are applied, plasma by electron resonance is generated, the interlayer oxide film 3 about 80% thick is etched and the through hole 51 is formed. In a second stage, the mixed gas of C4 F8 /O2 with the ratio of 4:3 is used, pressure 1mTorr, RF substrate bias power 700W and microwave power 1500W are applied, a plasma is generated, the interlayer oxide film 3 remaining about 20% thick is etched and a through hole 52 is formed.

6. 发明专利

JPH11330046A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11330046A
公开(公告)日：1999-11-30
申请号：JP12548198
申请日：1998-05-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUMOTO JUNKO , SAKAMORI SHIGENORI , TERATANI AKIYOSHI , KUSUMI YOSHIHIRO , FUKAO TETSUHIRO , OMI KAZUYUKI , TAWARA KENJI , YAMANAKA NOBUAKI
IPC分类号： C09K13/08 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/60 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To form a contact hole by a self-alignment method without causing damages to an etching stopper film and degrading electrical characteristics thereof. SOLUTION: An interlayer oxide film 11 is etched from the aperture 15 of a resist mask by a plasma etching method, using processing gas made of rare gas mixed with CF base gas to form a tapered portion 16 at the shoulder of a silicon nitride film. Also, a silicon oxide film and a silicon nitride film are etched in sequence from the aperture of the resist mask by the plasma etching method, using processing gas made of a mixed gas of rare gas, C4 F8 gas and CH2 F2 gas.

7. 发明专利

JP2000100940A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000100940A
公开(公告)日：2000-04-07
申请号：JP26491698
申请日：1998-09-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： TERATANI AKIYOSHI , TAWARA KENJI , YOKOI TAKAHIRO
IPC分类号： H01L21/302 , H01L21/28 , H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device that is equipped with wiring film layers, contact holes that connect wiring film layers together, and other contact holes connected to a semiconductor substrate and capable of restraining the semiconductor substrate located at the base of the contact holes from being overetched when the contact holes are formed at the same time. SOLUTION: A semiconductor device is equipped with a first wiring film 17 formed on a semiconductor board 15, a first interlayer insulating film 18 provided covering the first wiring film 17, a second wiring film 19 formed on the first interlayer insulating film 18, a second interlayer insulating film 20 provided covering the second wiring film 19, a first contact hole 22 that reaches down to the first wiring film 17 penetrating through the second interlayer insulating film 20, the second wiring film 19, and the first interlayer insulating film 18, and a second contact hole 23 that reaches down to the semiconductor substrate 15 penetrating through the second interlayer insulating film 20 and the first interlayer insulating film 18, where the top surface of the first interlayer insulating film 18 is made even by flattening the level difference caused by the first wiring film 17.

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