专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH04186614A CHEMICAL VAPOR GROWING APPARATUS 失效
公开(公告)号：JPH04186614A
公开(公告)日：1992-07-03
申请号：JP31221990
申请日：1990-11-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： INABA YUTAKA , NAKAJIMA YUICHI
IPC分类号： H01L21/205
摘要： PURPOSE:To obtain a chemical vapor growing apparatus which can easily and effectively detect an etching end time at the time of self-cleaning by obtaining a light emitting unit for emitting light to a reaction tube out of reaction chamber, and a photodetector for photodetecting a reflected light from the tube and detecting the amount of a chemical vapor growing film of the wall of the chamber by the amount of reflected light. CONSTITUTION:Laser light is projected onto a reaction tube 1 by an etching end time detector 11 during self-cleaning process, and the intensity of the reflected light is monitored by a photodetector in the detector. That is, if a polycrystalline silicon film is almost etched, the intensity (amount) of the reflected light is largely reduced. Accordingly, reduction of the intensity (amount) of the reflected light is detected thereby to detect the etching end time at the time of self-cleaning.

2. 发明专利

JPH0445269A DEVICE FOR IMPLANTING ION 失效
公开(公告)号：JPH0445269A
公开(公告)日：1992-02-14
申请号：JP15453990
申请日：1990-06-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： YAMAMOTO HIROHISA , NAKAJIMA YUICHI , MATSUDA SHINTARO
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
摘要： PURPOSE:To prevent deficient feed of electrons for neutralizing electric charges on a wafer by measuring the current density of ion beams in a device for implanting ions and controlling the amt. of electrons fed in accordance with the measured value. CONSTITUTION:When a disk 2 is drawn back from an ion beam path, ion beams reach a device 7 for measuring the density of ion beams. The density distribution of the ion beams is measured with the device 7 and the max. current density in the beams is detected. This detected max. current density is sent to a control circuit 8, electric current supplied to a filament 6 is set and thermoelectrons emitted from the filament 6 is controlled on the basis of the electric current supplied to the filament 6 to feed the optimum amt. of electrons in accordance with the max. current density. A proper amt. of electrons can be fed to a wafer 1 and the electrostatic breakdown of a device can be suppressed.

3. 发明专利

JPH03276666A RESIN SEALED SEMICONDUCTOR DEVICE FOR EXPERIMENT AND STRESS EVALUATION BY RESIN SEALING PROCESS 失效
公开(公告)号：JPH03276666A
公开(公告)日：1991-12-06
申请号：JP7828290
申请日：1990-03-26
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAJIMA YUICHI , MATSUDA SHINTARO
IPC分类号： H01L21/56 , H01L21/66 , H01L23/28 , H01L23/544
摘要： PURPOSE:To enable the effect of mechanical stress by the resin sealing process in the side direction of a semiconductor substrate to be evaluated by a method wherein the electrical characteristics of the first electron element are compared with those of the second electron element. CONSTITUTION:MOS field effect transistors 107, 109, 111, 113 comprising the same materials in the same dimensions provided with respective impurity regions are formed on the main surface of a silicon substrate 101. The length from the outer edge 102 represented by l1 of the transistor 107 to the impurity region 115 is 20mum. The length from the outer edge 102 represented by l2 of the transistor 109 to the impurity region 117 is 40mum. The length from the outer edge 102 represented by l3 of the transistor 111 to the impurity region 119 is 80mum. The other length from the outer edge 102 represented by l4 of the transistor 113 to the impurity region 121 is 200mum. In such a constitution, the MOS field effect transistors are formed in said positions to make the experiments in the electrical characteristics of respective MOS field effect transistors.

4. 发明专利

JPH0278098A CONTENT REFERENCE MEMORY CELL 失效
公开(公告)号：JPH0278098A
公开(公告)日：1990-03-19
申请号：JP3542889
申请日：1989-02-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： WATABE KIYOTAKA , EIMORI TAKAHISA , ARIMA HIDEAKI , AJIKA NATSUO , NAKAJIMA YUICHI , SATO SHINICHI
IPC分类号： G11C15/04
摘要： PURPOSE:To prevent the disappearance of data when power is cut off and to read the data from a bit line pair by directly connecting the respective first conducting terminals of the first and second nonvolatile memory transistors to respectively corresponding bit lines in the bit line pair. CONSTITUTION:When a word line WL is made into an 'L' level after floating gate type avalanche transistors MF1 and MF2 are respectively made into an ON state and an OFF state, data '1' are written to a memory cell. On the other hand, when a match line ML is made into an 'H' level, and an n-MOS transistor MD is made into the ON state after a bit line pair composed of bit lines BL and the inverse of BL is discharged, since the match line ML under the 'H' level is connected through the transistor MD and the transistor MF1 under the ON state to the bit line BL and cut off from the bit line the inverse of BL by the transistor MF2 under the OFF state, only the potential of the bit line BL heightens, and the data can be read by sensing the potential difference between the bit lines BL and the inverse of BL to compose the bit line pair.

5. 发明专利

JPH03184336A MANUFACTURE OF SEMICONDUCTOR DEVICE AND SIMULATION SUBSTRATE USED THEREFOR 失效
公开(公告)号：JPH03184336A
公开(公告)日：1991-08-12
申请号：JP32452389
申请日：1989-12-13
申请人： MITSUBISHI ELECTRIC CORP
发明人： AIHARA KAZUHIRO , NAKAJIMA YUICHI
IPC分类号： H01L21/304
摘要： PURPOSE:To clean a trench groove and a silicon substrate surface under suitable conditions by observing a state while processing in the same step as an actual cleaning step by using a simulation substrate to which a transparent quartz glass is made to adhere as a previous stage of the step of cleaning the groove and the substrate surface. CONSTITUTION:When a semiconductor device is manufactured through a step of forming a trench groove on a silicon substrate, a step of observing a state is executed while processing in the same step as an actual cleaning step by using a simulation substrate to which a transparent quartz glass 4A is made to adhere as a previous stage of the step of cleaning the groove and the substrate surface after the groove is formed on the substrate. For example, the substrate 1A is covered with a mask 2A made of resist of the size in which a trench is formed laterally, a groove 3A of the size in which the trench is formed laterally is dug, the mask 2A is then removed, and the plate 4A is adhered to a simulation substrate. This substrate is cleaned as the silicon substrate, and the fallen trench is observed by a microscope or the like in the processing step.

6. 发明专利

JPH0372651A RESIN SEAL TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0372651A
公开(公告)日：1991-03-27
申请号：JP22798089
申请日：1989-09-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAJIMA YUICHI , TOMIKAWA MITSUHIRO , YAMAMOTO HIROHISA
IPC分类号： H01L21/76 , H01L21/316
摘要： PURPOSE:To relieve mechanical stress applied to an element formed at the edge portion of the main surface of a semiconductor substrate, by filling a recessed part, formed on the main surface of the semiconductor substrate positioned from an element isolation insulating film to the edge portion of the semiconductor substrate, with buffering member made of material whose elastic modulus is smaller than that of semiconductor substrate material. CONSTITUTION:A bonding pad 58 is formed at the edge portion of the main surface of a silicon substrate 57, and a MOS transistor forming region 61 exists on the main surface of the silicon substrate 57. A field oxide film 62a serving as a buffering member is formed only between the MOS transistor forming region 61 and the edge portion of the silicon substrate 57. Said substrate is composed of silicon, whose elastic modulus is 1.7X10 dyn/cm . The field oxide film 62a is composed of silicon dioxide, whose elastic modulus is 0.7X10 dyn/ cm .

7. 发明专利

JPH02298033A MANUFACTURE OF SEMICONDUCTOR DEVICE; SIMULATED SUBSTRATE USED IN MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02298033A
公开(公告)日：1990-12-10
申请号：JP11924089
申请日：1989-05-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： AIHARA KAZUHIRO , NAKAJIMA YUICHI
IPC分类号： H01L21/76 , H01L21/304
摘要： PURPOSE:To clean a surface under proper conditions by a method wherein, when a trench groove formed in a silicon substrate and the surface of a silicon substrate are cleaned, a treatment identical to an actual cleaning operation is executed in advance by using a simulated substrate made of transparent quartz and a state of the treatment is observed. CONSTITUTION:Before a cleaning process, a rod-shaped simulated substrate 1A in which a trench groove 3A identical to a trench groove 3 to be obtained actually is formed and which is composed of transparent quartz or the like is first likened to a silicon substrate 1; the substrate is subjected to a cleaning treatment identical to an actual treatment. During this treatment process, a process to observe the treatment from one side of the simulated substrate 1A by means of a microscope or the like is executed. Accordingly, an operator can confirm, via the microscope, whether a cleaning liquid 4 has surely penetrated to the inside of the trench groove 3A in the simulated substrate 1A. Accordingly, during this process it is possible to find out proper treatment conditions based on a cleaning state at the inside of the trench groove 3A.

8. 发明专利

JPH0210774A SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0210774A
公开(公告)日：1990-01-16
申请号：JP16181388
申请日：1988-06-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMA HIDEAKI , OKUMURA YOSHIKI , GENJIYOU HIDEKI , OGAWA IKUO , YUZURIHA KOJIRO , NAKAJIMA YUICHI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
摘要： PURPOSE:To seek to improve reliability by arranging two floating gates at the upper part and at one side of a control gate on an insulating layer. CONSTITUTION:At one main face of a P-type substrate 1, for example, above a channel region to be formed between an N-type source 23 and a drain 24 is located, through a first gate oxide film 19, a control gate 29, and thereon is arranged the first floating gate 28a. At one side of the gate 29 is arranged, through a gate oxide film 20, a second floating gate 28b. Between the gate 29 and the gates 28a and 28b is interposed a thin interlayer film 19, and above them is formed an interlayer film 25, and from that main face to one part of the main face of a drain 24 is opened a contact hole 26. Wiring 27 above the film 25 is connected to the drain 24 through the hole 26. The gates 28a and 28b are joined at both ends, and these gate 28 and the gate 29 are arranged on a field oxide film for element isolation. By doing it this way, the effect by relative position slippage is avoided, and the fluctuation of coupling capacity is restrained, and the reliability can be improved.

9. 发明专利

JPH04261013A THERMISTOR AND FABRICATION THEREOF 失效
公开(公告)号：JPH04261013A
公开(公告)日：1992-09-17
申请号：JP191091
申请日：1991-01-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： KISHIBE KENJI , NAKAJIMA YUICHI
IPC分类号： H01L21/205 , H01L21/285 , H01L21/31
摘要： PURPOSE:To improve the quality of a produced film formed on a semiconductor wafer through a chemical vapor growing device. CONSTITUTION:A reaction vessel 11 is formed, elongated vertically with a square cylinder part 12 and a reaction vessel upper wall part 14, etc. The reaction vessel upper wall part 14 is formed, narrowed in its opening width as it goes upward, and a fluid injection inlet 13 is provided at the upper end thereof. Fluid is injected into the fluid injection inlet B in its amount thereof which flows down along the reaction vessel upper wall part 14 and the inner wall surface of the square cylinder part 12. A reaction product tending to adhere to the inner wall surface of the reaction vessel 11 is forced to flow together with the fluid and hence is not incorporated in a produced film on a wafer.

10. 发明专利

JPH0447656A ELECTROSTATIC CHARGE SENSOR FOR ION IMPLANTATION DEVICE 失效
公开(公告)号：JPH0447656A
公开(公告)日：1992-02-17
申请号：JP15453890
申请日：1990-06-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： MATSUDA SHINTARO , NAKAJIMA YUICHI , YAMAMOTO HIROHISA
IPC分类号： C23C14/48 , C23C14/54 , H01J37/04 , H01J37/317 , H01L21/265
摘要： PURPOSE:To detect accurately electric charges within the wafer plane even in the case ion beam irradiation is made dislocated from the center of the wafer by converting a disk drive signal and supplying to an electric charge probe driving device, and driving a probe in synchronization with parallel motion of the disk. CONSTITUTION:As the region 16 to be irradiated with an ion beam 8 moves, a probe 10 is synchronized with parallel motion of a disk 2, and a probe driving threaded rod 12 is put in parallel motion by a probe driving motor 13. At this time, signals from a control system 7 to control the parallel motion of the disk 2 are converted by a probe controlling system 14 installed between the first named control system 7 and the motor 13, and this converted signal is used as a drive signal for the motor 13, and the probe 10 is parallel moved to the position corresponding to the ion beam irradiation region 16. When a wafer 1 moves across the probe 10, electric charges 11 of opposite polarity to the electric charges 9 are induced on the wafer 1, and the flow of these induced charges 11 is detected in the form of voltage as the amount of electrostatic charge with aid of an amplifier.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式