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1. 发明专利

JPH0480367A DEVICE FOR PROCESSING SUBSTRATE WITH CHARGED BEAM 失效
公开(公告)号：JPH0480367A
公开(公告)日：1992-03-13
申请号：JP19378290
申请日：1990-07-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： MORIMOTO HIROAKI , ABE HARUHIKO
IPC分类号： C23C16/48 , C23F4/00 , H01L21/205 , H01L21/285 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To considerably increase the rate of processing of a substrate by bringing the substrate into high-frequency oscillation under cooling. CONSTITUTION:A trestle 6 is cooled, e.g. to the temp. of liq. nitrogen with a cooler 16. Ultrasonic waves are generated from an ultrasonic transducer 10 set in the trestle 6 through an ultrasonic controller 17 and a substrate 8 is brought into high-frequency oscillation at >=10kHz by applying the ultrasonic waves to the substrate 8. The rate of adsorption of gas fed from a gas nozzle 9 on the surface of the substrate is increased, accordingly the rate of formation of a thin film can be increased.

2. 发明专利

JPS6037623B2 失效
公开(公告)号：JPS6037623B2
公开(公告)日：1985-08-27
申请号：JP18880280
申请日：1980-12-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KONO YOSHIO , HARADA HIROTSUGU , DENDA MASAHIKO , NAGASAWA KOICHI , ABE HARUHIKO
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/417 , H01L29/47 , H01L29/78 , H01L29/872

3. 发明专利

JPS5779621A Plasma processing device 失效
标题翻译：等离子体加工装置
公开(公告)号：JPS5779621A
公开(公告)日：1982-05-18
申请号：JP15608680
申请日：1980-11-05
申请人： Mitsubishi Electric Corp
发明人： ABE HARUHIKO , HARADA HIROJI , DENDA MASAHIKO , NAGASAWA KOUICHI , KOUNO YOSHIO
IPC分类号： H01L21/31 , C23C8/36 , C23C16/513 , C23F1/00 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065
CPC分类号： H01J37/32623 , C23C8/36 , C23C16/513 , C23F1/00 , C23F4/00 , H01J37/32357 , H01J37/32678 , H01L21/302
摘要： PURPOSE: To enable generating of a plasma current along a reaction vessel, by a method wherein a static magnetic field, being uneven in an axial direction, is generated in the plasma reaction vessel using an air-core coil, and a high-frequency magnetic field, being uneven in an axial direction, is added further through a high-frequency waveguide.
CONSTITUTION: An air-core coil 1, generating a static magnetic field being uneven in an axial direction, and a high-frequency guidewave 2, producing a high- frequency magnetic field uneven in an axial direction, are mounted around a plasma generating glass tube 3 to constitute a plasma generating part A. If the high-frequency guidwave 2 generates a magnetic field having a magnetic field satisfying a cyclone resonance condition of an electron, an electron in the glass tube 3 is accelerated, and a plasma so produced is fed to a magnetic field through the polarization of the electron to produce a plasma current flowing along the glass tube 3 and to flow out to a plasma reaction part B. The plasma is shaped using coils 14 and 15, and a substrate 10, placed on a stand 9, is irradiated with the plasma so shaped.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：为了能够沿着反应容器产生等离子体电流，通过使用空心线圈的等离子体反应容器中产生在轴向上不均匀的静磁场和高频磁铁的方法通过高频波导进一步添加在轴向不均匀的场。构成：产生轴向不均匀的静磁场的空心线圈1和产生轴向不均匀的高频磁场的高频导波2安装在等离子体发生玻璃管的周围构成等离子体产生部件A.如果高频引导波2产生具有满足电子的旋风共振条件的磁场的磁场，则玻璃管3中的电子被加速，并且将如此产生的等离子体馈送通过电子的偏振到磁场，产生沿着玻璃管3流动的等离子体电流并流出到等离子体反应部分B.等离子体使用线圈14和15成形，并且将基板10放置在立柱9被等离子体照射成形。

4. 发明专利

JPS5732636A Etching apparatus 失效
标题翻译：蚀刻装置
公开(公告)号：JPS5732636A
公开(公告)日：1982-02-22
申请号：JP10869680
申请日：1980-08-06
申请人： Mitsubishi Electric Corp
发明人： KONISHI KANJI , ABE HARUHIKO , ITAKURA HIDEAKI
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32623
摘要： PURPOSE:To improve the selectivity of a resist and material to be etched with a lower temperature of a semiconductor substrate, especially the resist by forming an etching stop region with the deflection of charged particles in a magnetic field applied. CONSTITUTION:The semiconductor substrate 7 in which material to be etched such as polysilicon and silicon dioxide are formed on a silicon substrate and covered with a resist to determine the etching pattern are arranged on an electrode 5 in circle. A chamber 1 is maintained at a low pressure inside by exhausting with an exhausting port 3 and a high frequency power is applied between electrodes 4 and 5 to perform an etching. Magnets 9 and 10 are provided at a part of the chamber to deflect charged particles 8 with a magnetic flux 12 creating such an etching stop region 13 that the temperature of the substrate 7 is lowered therein. The electrode 5 is rotated on a shaft l to lower the average temperature of the substrate 7.
摘要翻译：目的：通过在施加磁场中形成具有带电粒子的偏转的蚀刻停止区域来提高抗蚀剂和半导体衬底的较低温度下的蚀刻材料的选择性，特别是抗蚀剂。构成：在硅基板上形成有被蚀刻的材料如多晶硅和二氧化硅的半导体衬底7被覆有抗蚀剂以确定蚀刻图案，被布置在电极5上。室1通过排气口3排出而保持在内部的低压，并且在电极4和5之间施加高频功率以进行蚀刻。磁体9和10设置在室的一部分，以使具有磁通12的带电粒子8偏转，从而形成这样的蚀刻停止区域13，使得衬底7的温度降低。电极5在轴1上旋转以降低基板7的平均温度。

5. 发明专利

JPS56105480A PLASMA ETCHING METHOD 失效
公开(公告)号：JPS56105480A
公开(公告)日：1981-08-21
申请号：JP818080
申请日：1980-01-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAGATOMO MASAO , MIZUGUCHI KAZUO , ABE HARUHIKO
IPC分类号： H01L21/302 , C23F1/02 , C23F4/00
摘要： PURPOSE:To drastically enhance the uniformity of etching to a film to be etched with a very simple means by projecting ultraviolet ray to a semiconductor substrate containing a film to be etched and a reactive plasma gas. CONSTITUTION:A silica chamber 3 containing a semiconductor substrate 1 having a film 2 to be etched is exhausted 4 to the specified vacuum. Then, a reactive gas is introduced 5 into the chamber 3, the specified voltage is applied from a high-frequency power supply 8 to the external electrode 6 and the internal screen electrode to form plasma of the reactive gas. A ultraviolet lamp 9 installed at the inside and outside of the chamber 3 are used to project ultraviolet ray on reactive plasma gas and the film 2 containing substrate 1 in the chamber 3. This drastically increases the activation energy of reactive gas and enables a high-speed etching application to an Al film or Si oxide film for which the application of plasma etching is heretofore impossible.

6. 发明专利

JPS56105479A PATTERN FORMATION METHOD 失效
公开(公告)号：JPS56105479A
公开(公告)日：1981-08-21
申请号：JP817880
申请日：1980-01-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： ABE HARUHIKO , NAGATOMO MASAO , MIZUGUCHI KAZUO
IPC分类号： C23F4/00 , C23F1/02 , H01L21/302
摘要： PURPOSE:To form a fine pattern while simplifying the process and work contents by a method wherein part of Mo film formed on the surface of substrate is transformed to molybdenum oxide and is removed by utilizing its heat sublimation property. CONSTITUTION:A specified thickness of Mo film 2 is formed on the surface of a substrate film or substrate base plate 1 and then is placed in an oxidizing atmosphere containing O2. Then, selected surface part of the Mo film 2 is locally heated and oxidized. This heating, for example, is done with a laser beam. That is, an optical system is used to adjust laser beam 3 to the specified diameter of beam, the laser is projected on the selected surface region 4 of the Mo film 2 to heat the local region 5 within the surface to a specified temperature, for example, to 400 deg.C or more and to transform the local region 5 to molybdenum oxide film 6. The film 6 having heat-sublimation property is removed by vaporization thereby providing the desired pattern 7.

7. 发明专利

JPS5646550A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5646550A
公开(公告)日：1981-04-27
申请号：JP12337079
申请日：1979-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA SHIGEJI , ABE HARUHIKO , HARADA HIROTSUGU , DENDA MASAHIKO , HIRATA KATSUHIRO
IPC分类号： H01L23/29 , H01L21/312 , H01L23/31
摘要： PURPOSE:To contrive the improvement in the moisture resistance of a semiconductor device by plasma treating a semiconductor assembly in a gas containing as main ingredient a supersaturated haloge compound, thereby forming a plasma-polymerized high molecular film on the surface of the assembly and thereafter sealing the assembly. CONSTITUTION:A semiconductor element 1 is mounted on a package base 4, a PSG6 is covered thereon, and a bonding pad 3 is connected through a wire 7 to a connecting pin 5 in a semiconductor device. This device is contained in a treatment chamber, a C4F8 is introduced into the chamber, is retained at 2 Torr or the like, and a plasma is generated therein. The C4F8 are polymerized, and a high molecular film 9 is formed on the surface of the device. When a reducing gas such as H2 or the like is added thereto, the polymerization can be easily conducted. This film incorporates a strong bonding strength, a high hydrophobic property, an acid resistance, and excellent covering property. Accordingly, the metallic portion may not be corroded with water infiltrating from the mold material of a plastic mold 9 continuously, and there can be obtained a semiconductor device having a high reliability.

8. 发明专利

JPS563679A FORMATION OF METALLIC PATTERN 失效
公开(公告)号：JPS563679A
公开(公告)日：1981-01-14
申请号：JP7989479
申请日：1979-06-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUBOUCHI NATSUO , HARADA KOUJI , ABE HARUHIKO , YONEDA MASAHIRO , OOHAYASHI YOSHIKAZU
IPC分类号： C23F4/00 , C23F1/00 , H01L21/302 , H01L21/3065 , H01L27/00
摘要： PURPOSE:To form a micro-pattern, by etching metal such as aluminum by using metallic oxide such as aluminum oxide as a mask. CONSTITUTION:On a substrate 1, on which a wiring pattern is made, is formed metallic material (aluminum) 2 which constitutes the wiring. Then a glass mask is placed on the substrate in such a way that photosensitive resin 3 is left on the range to be etched, and the substrate is exposed and developed. Subsequently, aluminum oxide coating 4 is formed on the surface of the exposed aluminum 2 by using the photosensitive resin 3 as a mask by oxygen-ion implantation etc. After that, the photosensitive resin 3 is removed, and aluminum 2 is removed by dry etching, the aluminum oxide coating 4 being removed separately. The etching is achieved in plasmatic gas of CCl4 at a pressure of about 0.75 Torr by applying high frequency wave of 13.5MHz.

9. 发明专利

JPS5553422A PLASMA REACTOR 失效
公开(公告)号：JPS5553422A
公开(公告)日：1980-04-18
申请号：JP12705078
申请日：1978-10-16
申请人： MITSUBISHI ELECTRIC CORP
发明人： ABE HARUHIKO
IPC分类号： H01L21/205 , C23F1/00 , C23F4/00 , H01L21/302
摘要： PURPOSE:To lengthen the life of ions and increase ion concentration, by making a fixed mass of ions resonate selectively and heating it from the magnitude of the static magnetic field required for resonance between a high freqency and an ion cyclotron. CONSTITUTION:Glass tube 3 for holding plasma is exhausted, gas 6 is drawn into tube 3 from gas inlet 5 and is maintained at a fixed pressure. High-frequency power is applied to plasma generating high-frequency impressed voltage 7 outside tube 3, and thereby gas plasma is produced. On the other hand, another electrode 8 for applying high-frequency power is provided outside tube 3 in ion cyclotron resonating and heating region 2. By a separate cylindrical magnet R, a static magnetic field is generated. From the magnitude of the static magnetic field required for resonance between the high frequency and the ion cyclotron, it is possible to make a fixed mass of ions resonate selectively and heat it. By this, the life of ions can be lengthened and ion concentration can be increased.

10. 发明专利

JPS54134979A SEMICONDUCTOR OXIDATION UNIT 失效
公开(公告)号：JPS54134979A
公开(公告)日：1979-10-19
申请号：JP4345778
申请日：1978-04-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： TSUBOUCHI NATSUO , ABE HARUHIKO , NISHIMOTO AKIRA , MIYOSHI HIROKAZU
IPC分类号： H01L21/31
摘要： PURPOSE:To make it possible to oxidize a semiconductor surface at a high pressure and low temperature, b separately providing an oxidation oven and a combustion oven, by burning hydrogen and oxygen in the combustion oven and by supplying obtained water vapor to the oxidation oven. CONSTITUTION:At one end of quartz pipe 1, oxygen intake 2 and intake 3 for hydrogen or nitrogen with injector 4 protruding into quartz pipe 1 are both provided and combustion heating oven 5 is fitted to the outer circumference of quartz pipe 1 close to intake 2. Then, oxidation heating oven 6 is arranged at the outer circumference of quartz pipe 1 being away from it, and board 8 with Si substrates 7 is installed at a position corresponding to heating oven 6 inside of quartz pipe 1. In the above constitution, combustion oven 5 is set to 700 deg.C and oxidation oven 6 is to 600 deg.C; board 8 is inserted while nitrogen is being supplied from intake 3. Next, nitrogen is substituted with hydrogen and at the same time, oxygen is flowed in from intake 2 to oxidize the surface of substrate 7 using generated water vapor. In this way, a thick SiO2 film is obtained quickly.

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