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1. 发明专利

JP2006147675A Semiconductor device and its evaluation method 审中-公开
标题翻译：半导体器件及其评估方法
公开(公告)号：JP2006147675A
公开(公告)日：2006-06-08
申请号：JP2004332668
申请日：2004-11-17
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： SAITO HIROSHI , YASUIKE NORIYUKI
IPC分类号： H01L21/60 , H01L33/32 , H01L33/36 , H01L33/62
CPC分类号： H01L2224/14 , H01L2924/351 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To evaluate poor bonding in facedown mounting (surface mounting) semiconductor device, where the surface side of a semiconductor chip is connected with a mounting board. SOLUTION: On the semiconductor chip 10 side, a test electrode 23 is formed by electrically separating the contact part of a bump electrode 21, at electrodes 15 and 16 in ohmic contact with semiconductor layers 12 and 13, at least partially from the periphery, a lead line is led out from the test electrode 23 and connected to a lead-out electrode. On the mounting board 20 side, a test pad is provided facing the lead-out electrode and a test bump electrode is formed on the test pad. Consequently, the junction of the electrodes 15, 16 and the electrode 21 can be electrically evaluated nondestructively, from the side of a circuit pattern formed on the mounting board 20 via the pad and the test pad on the mounting board 20 side. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了评估半导体芯片的表面侧与安装板连接的面向安装（表面安装）半导体器件的差的接合。解决方案：在半导体芯片10侧，通过将电极15和16与半导体层12和13以欧姆接触的方式将凸起电极21的接触部分电分离，形成测试电极23，至少部分地与引线从测试电极23引出并连接到引出电极。在安装板20侧，设置面向引出电极的测试焊盘，并且在测试焊盘上形成测试突起电极。因此，电极15,16与电极21的接合部可以从安装板20上经由焊盘和安装板20侧的测试焊盘形成的电路图案的侧面非破坏性地评价。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004354073A Semiconductor acceleration sensor 审中-公开
公开(公告)号：JP2004354073A
公开(公告)日：2004-12-16
申请号：JP2003148978
申请日：2003-05-27
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： KAMI HIRONORI , SAITO HIROSHI , NAGAO SHUICHI
IPC分类号： G01P15/12 , G01P15/08 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor that can be manufactured more efficiently. SOLUTION: The semiconductor acceleration sensor comprises a frame section 2 consisting of a laminate of a support layer 23 and an active layer 21 with a middle insulating layer 22 in between; a beam section 3 one end of which is connected to the frame section 2; a weight section 1 that is connected to the other end of the beam section 3 and is supported by the frame section 2 so that it can be rocked freely; a piezo resistor 4 that is formed at the beam section 3 and outputs an electric signal according to acceleration applied to the weight section 1; and upper and lower stoppers 51, 52 that are joined to the support layer 23 and the active layer 21, are along the lamination direction of the frame section 2, and limit the excessive rocking of the weight section 1. Further, the middle insulating layer 22 is formed to be 1,000Å or smaller, positive potential is applied to the middle insulating layer 22 and negative potential is applied to the upper/lower stoppers 51, 52 and the middle insulating layer 22 is subjected to dielectric breakdown, and the support layer 23 and the upper stopper 52, and the active layer 21 and the upper stopper 51 conduct electricity for anode junction. The middle insulating layer is subjected to insulation breakdown, the first silicon layer and the first stopper, and the second silicon layer and the second stopper conduct electricity for anode junction for more efficient manufacture. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004176802A Micro valve 有权
公开(公告)号：JP2004176802A
公开(公告)日：2004-06-24
申请号：JP2002342912
申请日：2002-11-26
申请人： Masaki Esashi , Matsushita Electric Works Ltd , 松下電工株式会社 , 正喜江刺
发明人： SAITO HIROSHI , KAWADA HIROSHI , TOMONARI SHIGEAKI , YOSHIDA KAZUJI , ESASHI MASAKI , TANAKA HIDEJI
IPC分类号： F16K31/02
摘要： PROBLEM TO BE SOLVED: To provide a microvalve capable of coping with high-pressure fluid while reducing a size and a drive voltage. SOLUTION: This microvalve comprises a base substrate 10 having a valve port 11 and an inflow port 12 formed therethrough, a rectangular frame-shaped frame 21, a valve element 23, and a micro structure 20 formed integrally with a deflection part 22 connecting the frame 21 to the valve element 23. The deflection part 22 comprises a movable electrode 24 opposed to a fixed electrode 31 installed on a fixed electrode support substrate 30. A pressure transmission part 28 as a pressure transmission means is deflected by the fluid pressure of fluid led into a second chamber through the inflow port 12 and a force in the direction of closing the valve port 11 acts on the valve port 11 by the valve element 23. When a voltage is not applied to both electrodes 24 and 31, the valve port 11 is closed by the valve element 23 and when the voltage is applied across the electrodes 24 and 31, the deflection part 22 is deflected so that the movable electrode 24 is allowed to abut on the fixed electrode 31 by a static power to open the the valve port 11. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2003156509A SEMICONDUCTOR ACCELEROMETER AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003156509A
公开(公告)日：2003-05-30
申请号：JP2001357824
申请日：2001-11-22
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SAITO HIROSHI , ISHIDA TAKUO , KAMI HIRONORI , NISHIYAMA AKIHISA
IPC分类号： G01P15/12 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor accelerometer whose shock resistance is superior and to provide a method of manufacturing the semiconductor accelerometer. SOLUTION: A sensor mainframe 1 is formed by using an SOI substrate 100' in which an active layer 103 composed of an n-type silicon layer is formed on a buried insulating layer 102 on a support layer 101 composed of an n-type silicon layer. Flexure parts 13 are formed in such a way that chamfered parts 26 are formed between both side faces of the flexure parts 13, the inner circumferential face of a support frame 11 and the outer circumferential face of a plumb hob part 12 in which a way that both end parts in their extension direction are wider than central parts, and gage resistances 15 are formed in parts excluding both end parts. The chamfered parts 26 are formed in such a way that when a slit 14 is formed between the plumb hob part 12 and the support frame 11, a part corresponding to the slit 14 in the support layer 101 is etched so as to reach the buried insulating layer 102, that the active layer 103 is anisotropically etched by TMAH by using a silicon nitride film 19a as a mask and that the buried insulating layer 102 is removed.

5. 发明专利

JP2003139793A SEMICONDUCTOR ACCELERATION SENSOR 审中-公开
公开(公告)号：JP2003139793A
公开(公告)日：2003-05-14
申请号：JP2001335826
申请日：2001-10-31
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SAITO HIROSHI , ISHIDA TAKUO , KAMI HIRONORI
IPC分类号： G01P21/00 , G01P15/12 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor capable of improving the efficiency in inspection by improving the crack detecting accuracy. SOLUTION: This semiconductor acceleration sensor comprises a frame 10, a weight part 12 swingably mounted inside of the frame 10 and displaced relatively to the frame 10 by the acceleration acting thereon, a beam 11 projected to an inner side of a predetermined one side of the frame 10 for elastically supporting the weight part 12, a sensor chip 1 mounted at least on the beam 11 and provided with the detecting wire 5 for detecting the crack on the base, and stoppers 6a, 6b for controlling the maximum displacement of the weight part 12. The detecting wire 5 is mounted corresponding to the chamfered shape in a plane view, of a corner part 11a of the beam 11.

6. 发明专利

JP2002162409A SEMICONDUCTOR ACCELERATION SENSOR AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002162409A
公开(公告)日：2002-06-07
申请号：JP2000358619
申请日：2000-11-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： AKAI SUMIO , KATAOKA KAZUSHI , SAIJO TAKASHI , KAMI HIRONORI , SAITO HIROSHI , SAITO MAKOTO , ISHIDA TAKUO
IPC分类号： G01P15/12 , G01P15/08 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor aimed at cost reduction, and to provide its manufacturing method. SOLUTION: This semiconductor acceleration sensor is equipped with a sensing element 1, made of silicon and upper and lower caps 2 and 3. The sensing element 1 has a weight part 5, rockably supported at a portion on the principal surface side of a support part 10 via a thin-walled flexible part 4 and a gauge resistance 7 formed on the flexible part 4 to detect deformation of the flexible part 4. The upper and lower caps 2 and 3 are joined to the support part 10, on its front surface side and back surface side, respectively, so that gaps serving as spaces for the rocking motion of the weight part 5 are left by the weight part 5. On the back side of the lower cap 3, a protrusive table part 3b is installed to mount the lower cap 3 on a mounting board 40 with the sensing element 1 being inclined relative to the board 40, so that the center of gravity position of the weight part 5 substantially coincides with that of the flexible part 4, in a direction in which acceleration is exerted on the weight part 5.

7. 发明专利

JP2002098709A SEMICONDUCTOR ACCELERATION SENSOR 失效
公开(公告)号：JP2002098709A
公开(公告)日：2002-04-05
申请号：JP2000291353
申请日：2000-09-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SAITO HIROSHI , HIMURA YOSHIMASA , TANAKA YASUSHI , KANI MITSUHIRO , KAMI HIRONORI , ISHIDA TAKUO
IPC分类号： G01P15/12 , G01P15/08 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor allowing a wire bonding and having improved sensor characteristics and resistance to mechanical impact. SOLUTION: A sensor body comprised of a sensing element 1 in which a gauge resistance 6 is formed on a deformation part 4, an upper cap 2 and a lower cap 3 is mounted on a mounting board 23. A pad 14 to which a bonding wire is bonded is formed on the sensing element 1. A plurality of hard supports 19 for supporting the sensor body are present between the sensor body and a die bond pad 21 for the mounting board 23, and a die bond paste 20 as an adhesive is filled within a clearance between the lower cap 3 and the die bond pad 21 for the mounting board 23.

8. 发明专利

JP2001337106A SEMICONDUCTOR ACCELERATION SENSOR 失效
公开(公告)号：JP2001337106A
公开(公告)日：2001-12-07
申请号：JP2000157338
申请日：2000-05-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KAMI HIRONORI , ISHIDA TAKUO , SAITO HIROSHI , AKAI SUMIO , KATAOKA KAZUSHI , SAIJO TAKASHI , SAITO MAKOTO
IPC分类号： G01P15/12 , G01P15/125 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To make a temperature characteristic relating to the detection of acceleration hard to deteriorate. SOLUTION: This sensor includes an acceleration sensor chip 1 having a beam-shaped deflecting part extended therefrom in a predetermined direction, with a weight part supported against the end of the deflecting part by integral molding, the weight part being displaced by acceleration; a first cap 2 joined to one face of the acceleration sensor chip 1 to face the weight part; and a second cap 3 joined to the other face of the acceleration sensor chip 1 to face the weight part from the side opposite to the first cap 1. The acceleration sensor chip 1 has a joining face 17, to which the first cap 1 is joined, the joining face being located closer to the end along a prescribed direction than to the vicinity of the root of the deflecting part from which the deflecting part is extended.

9. 发明专利

JP2001304995A SEMICONDUCTOR PRESSURE SENSOR AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001304995A
公开(公告)日：2001-10-31
申请号：JP2000123478
申请日：2000-04-25
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： MIYAJIMA HISAKAZU , KATAOKA KAZUSHI , SAIJO TAKASHI , SAITO HIROSHI , AKAI SUMIO , EDA KAZUO , AOKI AKIRA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor which can be made compact without decreasing a sensitivity and its manufacturing method. SOLUTION: An SOI substrate including an insulating layer 6 of a buried oxide film inside is used as a semiconductor substrate 1. Part of an active layer 7 of the semiconductor substrate 1 constitutes a diaphragm part 2 of a sensor chip. Four piezoelectric resistors R1, R2, R3 and R4 are formed on the side of a main surface of the diaphragm part 2. A void part 4 which is formed hollow inside the semiconductor substrate 1 and can deflect the diaphragm part 2 is formed by etching and removing part of the insulating layer 6 between a supporting substrate 5 and the active layer 7 of the SOI substrate through an etching solution introduction hole 9.

10. 发明专利

JP2001284603A METHOD OF MANUFACTURING SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JP2001284603A
公开(公告)日：2001-10-12
申请号：JP2000089595
申请日：2000-03-28
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： SAITO HIROSHI , AKAI SUMIO , MIYAJIMA HISAKAZU , KATAOKA KAZUSHI , SAIJO TAKASHI , ISHIDA TAKUO
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor pressure sensor by which a semiconductor pressure sensor having a higher breakdown voltage than the conventional one can be manufactured. SOLUTION: In this method of manufacturing a semiconductor pressure sensor, an aluminum layer 6 is formed in the thickness of 1 μm to 3 μm on a thick bottom face 36 of a silicon substrate 31 which will become a joint face with a glass substrate 32 and then the silicon substrate 31 and the glass substrate 32 are bonded. Not only on the thick bottom face of the silicon substrate which will become a joint face with the glass substrate but also on the entire surface wherein diaphragms are bored, the aluminum layer is formed in the thickness of 1 μm to 3 μm and then the silicon substrate and the glass substrate are bonded to manufacture the semiconductor pressure sensor.

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