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1. 发明专利

JP2007080867A Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2007080867A
公开(公告)日：2007-03-29
申请号：JP2005262929
申请日：2005-09-09
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： ARII YASUTAKA , TANAKA KENICHIRO
IPC分类号： H01L33/22 , H01L33/32 , H01L33/64
CPC分类号： H01L2224/73265 , H01L2924/16195 , H01L2924/19107
摘要： PROBLEM TO BE SOLVED: To efficiently conduct heat generating from an LED chip to a main body from a base member and radiate it.
SOLUTION: Heat generating from an LED chip 2 is conducted to a base member 3 through a submount member 4, and it is conducted from the base member 3 to a main body 10 through an insulating layer 12 and it is radiated. In this case, a facing area between the base member 3 and the main body 10 via the insulating layer 12 becomes larger because of a recess 11 formed in the main body 10 and the projection 3a of the base member 3, so that heat generating from the LED chip 2 can be efficiently conducted from the base member 3 to the main body 10 and it can be radiated therefrom.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了有效地将从LED芯片产生的热量从基体部件传导到主体并将其辐射。解决方案：从LED芯片2产生的热量通过基座部件4传导到基体部件3，并且通过绝缘层12从基部部件3传导到主体10并被辐射。在这种情况下，由于形成在主体10中的凹部11和基体部件3的突出部3a，基体部件3和主体10之间经由绝缘层12的面对区域变大， LED芯片2能够从基体部件3有效地传导到主体部10，并且能够从其发射。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2007080529A Led luminaire 审中-公开
标题翻译： LED LUMINAIRE
公开(公告)号：JP2007080529A
公开(公告)日：2007-03-29
申请号：JP2005262928
申请日：2005-09-09
申请人： Matsushita Electric Works Ltd , 松下電工株式会社
发明人： ARII YASUTAKA
IPC分类号： F21S8/04 , F21S2/00 , F21Y101/02 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide an LED luminaire having excellent color mixture property regardless of a viewing angle by providing a plurality of LED elements for each luminescent color of red, green, and blue and mixing generated light of each LED element to generate white light.
SOLUTION: LED elements 3R, 3G, 3B of red, green, and blue are arranged on each one vertex of a plurality of regular hexagons arranged in a shape of a honeycomb on the mounting substrate 3a. Each emitted light of LED elements 3R, 3G, 3B is mixed to generate the white light.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过为每个LED元件的每个发光颜色提供多个LED元件并且将每个LED元件的产生的光混合到一起来提供具有优异的混色特性的LED照明器，而不管视角如何，产生白光。解决方案：将红色，绿色和蓝色的LED元件3R，3G，3B布置在安装基板3a上以蜂窝形状布置的多个正六边形的每个顶点上。 LED元件3R，3G，3B的每个发光都混合以产生白光。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2002340849A SEMICONDUCTOR ION SENSOR AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JP2002340849A
公开(公告)日：2002-11-27
申请号：JP2001145524
申请日：2001-05-15
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA , SAKAI ATSUSHI , SUGIURA YOSHIYUKI , SAITO HIROSHI , YAMAMOTO MASAHIRO
IPC分类号： G01N27/414 , H01L21/56
摘要： PROBLEM TO BE SOLVED: To prevent a sealing resin from covering an ion sensitive part to impair a sensor function, and to simplify the mounting work process for it. SOLUTION: A frame part 11 is bonded to the surface side of a sensor chip A. The frame part 11 is formed of metal or synthetic resin like a cylinder having an opening part 11a, the diameter of which is not smaller than the ion sensitive part 6, and bonded to the sensor chip A with the ion sensitive part 6 facing to the opening part 11a. Accordingly, when the region outside the ion sensitive part 6 is sealed with sealing resin 23, the sealing resin 23 can be inhibited from flowing into the ion sensitive part 6 by the frame part 11 without a special device for covering the ion sensitive part 6, the sealing resin 23 can be prevented from covering the ion sensitive part 6 to impair the sensor function, the mounting work process for it can be simplified, and lowering of yield can be prevented.

4. 发明专利

JP2000337984A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JP2000337984A
公开(公告)日：2000-12-08
申请号：JP14573199
申请日：1999-05-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YASUIKE NORIYUKI , KENO TAKUJI , TAKAKURA NOBUYUKI , ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00 , G01L19/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor having an improved fracture resistance. SOLUTION: A semiconductor pressure sensor is provided with a sensor chip 1 constituted by forming a gauge resistor 4 composed of a piezo-resistance element on the main surface side of a diaphragm 2 formed by providing a recessed section 3 by etching the rear surface of a silicon substrate, a glass pedestal 6 which has a through hole 5 communicating with the recessed section 3 and is anodically joined to the chip 1, and a pressure introducing pipe 7 which has a pressure introducing hole 8 communicating with the through hole 5 and to which the glass pedestal 6 is fixed. On the surface of the pipe 7 joined with the pedestal 6, a cover section 9 is erected so as to surround the side faces of the chip 1 and pedestal 6 and the side faces of the chip 1 and pedestal 6 are fixed to the pipe 7 with a brazing material.

5. 发明专利

JP2000216197A FLIP CHIP CONNECTION METHOD 失效
公开(公告)号：JP2000216197A
公开(公告)日：2000-08-04
申请号：JP1637499
申请日：1999-01-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KUZUHARA KAZUNARI , TAKAMI SHIGENARI , TANAKA YASUSHI , INOUE TOMOHIRO , KENO TAKUJI , ARII YASUTAKA
IPC分类号： H01L21/60 , H01L21/56
摘要： PROBLEM TO BE SOLVED: To get a highly reliable semiconductor device at high yield. SOLUTION: As shown in (a), the chip mount of a board 4 is supplied with liquid-form sealing resin 8a of such quantity that it does not spread to the electrode 2 and the gold bump 5 of a semiconductor chip 1 when the semiconductor chip 1 is mounted on the board 4, and also silver paste 3 being conductive paste is transcribed to the tip of the gold bump 5. Then, as shown in (b), the semiconductor chip 1 is mounted on the board 4 so that the gold bump 5 may be laid on the conductor pattern 4, and the gold bump 5 and the conductor pattern 6 are joined with each other by pressurization and heating. Then, as shown in (c), the gap between the semiconductor chip 1 and the board 4 is sealed with liquid-form sealing resin 8b, whereby the periphery of the junction between the gold bump 5 and the conductor pattern 6 is protected.

6. 发明专利

JPH10213503A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JPH10213503A
公开(公告)日：1998-08-11
申请号：JP1843897
申请日：1997-01-31
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor capable of making a full scale voltage characteristic a high output without thinning the thickness of a diaphragm. SOLUTION: A bridge circuit A is composed by piezoresistances R1 to R4 as strain gauges and a bridge circuit B is composed by piezoresistances R5 to R8 as strain gauges, while a high potential side power supply end a1 of the bridge circuit A and a high potential side power supply end b1 of the bridge circuit B are connected to a source V and a low potential side power supply end a2 of the bridge circuit A and a low potential side power supply end b2 of the bridge circuit B are connected to the ground GND. A low potential side output end a3 of the bridge circuit A and the high potential side output end b3 of the bridge circuit B are connected to each other through a subtraction amplifier 1a and a high potential side output end a4 of the bridge circuit A and a low potential side output end 4 of the bridge circuit A are connected to each other through a substraction amplifier 1b. Output of subtraction amplifiers 1a, 1b is connected to an addition amplifier 2a.

7. 发明专利

JPH09289238A EVALUATION METHOD OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH09289238A
公开(公告)日：1997-11-04
申请号：JP10158296
申请日：1996-04-23
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA , YAMAMOTO HARUHIKO
IPC分类号： G01B11/24 , G01N21/88 , G01N21/956 , H01L21/66 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To more accurately estimate the state of a junction interface of a semiconductor substrate that is joined at its positive electrode with a glass base. SOLUTION: In an estimation method of a semiconductor substrate for estimating the junction state of a junction interface between a semiconductor substrate 1 joined at its anode electrode and a glass base 2, laser light A is irradiated from a direction inclined toward an outer surface 2c of a glass base 2, and reflected lights A1 , A2 reflected on the junction interfaces 2b and 1a are detected by an optical detector 4 disposed outside the glass base 2, and further there is measured with a spectrophotometer 5 each of spectra becoming interference fringes differing in light intensities owing to an optical path difference of the reflected lights A1 , A2 produced when a gap (d) is existent in the junction interfaces 1a, 2b. A measured result is subjected to numerical processing in a processing part 6 for estimation of the state of the junction interface.

8. 发明专利

JP2002350386A SEMICONDUCTOR ION SENSOR 失效
公开(公告)号：JP2002350386A
公开(公告)日：2002-12-04
申请号：JP2001158329
申请日：2001-05-28
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA , SAKAI ATSUSHI , SAITO HIROSHI , SUGIURA YOSHIYUKI , YAMAMOTO MASAHIRO
IPC分类号： G01N27/414 , G01N27/416 , G01N27/49
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor ion sensor that prevents covering an ion sensitive section when covering a semiconductor substrate, and can make a covering process simple. SOLUTION: The semiconductor ion sensor includes the semiconductor substrate 2 having the ion sensitive section 5, and an insulating film 10 covering the whole surface of the semiconductor substrate 2 except the ion sensitive section 5 and covering a connection region between an electrode 6 and a lead 8. An aperture 9 corresponding to the ion sensitive section 5 is arranged on the insulating film 10 beforehand.

9. 发明专利

JP2000249611A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JP2000249611A
公开(公告)日：2000-09-14
申请号：JP4995499
申请日：1999-02-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor with high reliability which prevents cracking in a seating due to the heat contraction of solder. SOLUTION: A semiconductor pressure sensor is formed by joining a semiconductor substrate 1 with a diaphragm 11 to a seating 2 in which a pressure introducing opening 21 for introducing pressure to the diaphragm 11 is formed and fixing the seating 2 to a package 3. In the semiconductor pressure sensor, fitting structures 22 and 34 are formed in an outer circumferential part of the seating 2 and the package 3, and they are fitted together by the fitting structures 22 and 34 with a thermosetting material 9 present between them. Then heat is applied to the thermosetting material 9 to harden it to fix the seating 2 and the package 3.

10. 发明专利

JP2000241272A SEMICONDUCTOR PRESSURE SENSOR 失效
公开(公告)号：JP2000241272A
公开(公告)日：2000-09-08
申请号：JP4253399
申请日：1999-02-22
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide the semiconductor pressure sensor which prevents its pedestal from breaking owing to the heat shrinkage of solder and has high reliability. SOLUTION: A semiconductor substrate 1 which has a diaphragm 11 and the pedestal 21 having a pressure intake hole 21 for introducing pressure into the diaphragm 11 are joined together and the pedestal 2 is fixed to a package 3 to constitute the semiconductor pressure sensor. A pressure intake hole 21 is formed projecting from a die 31 of the package 3, the pressure intake pipe 34 is inserted into the pressure intake hole 21 of the pedestal 2, and a thermosetting body 9 is interposed between the external surface of the pressure intake pipe 34 and the internal surface of the pressure intake hole 21 of the pedestal 2 and hardened by being heated to fix the pedestal 2 and package 3.

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