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1. 发明专利

JPH109981A APPARATUS FOR MEASURING SEMICONDUCTOR PRESSURE SENSOR CHIP 失效
公开(公告)号：JPH109981A
公开(公告)日：1998-01-16
申请号：JP16542396
申请日：1996-06-26
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO , ARII YASUTAKA
IPC分类号： G01L9/04 , G01L9/00 , G01L27/00 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor pressure sensor chip measuring apparatus capable of discovering the trouble point of a semiconductor pressure sensor chip in its early stages. SOLUTION: A socket main body 1 having a recessed part 1a formed of a heat-resistant resin and a lid 2 having a pressure introducing hole 2a are provided and an outside drawing-out terminal 3 for drawing out the electrode wiring of a semiconductor pressure sensor chip 4 to the outside of the socket main body 1 is provided to the bottom surface of the recessed part 1a in the socket main body 1 so as to pierce the same. Herein, the outside drawing-out terminal 3 is arranged so as to be electrically connected to the electrode wiring of the semiconductor pressure sensor chip 4 when the semiconductor pressure sensor chip 4 is housed in the recessed part 1a.

2. 发明专利

JPH11133052A SEMICONDUCTOR ACCELERATION SENSOR AND METHOD FOR INSPECTING THE SAME 失效
公开(公告)号：JPH11133052A
公开(公告)日：1999-05-21
申请号：JP29921697
申请日：1997-10-30
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO , ARII YASUTAKA
IPC分类号： G01P21/00 , G01P15/12 , H01L41/08
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor acceleration sensor for inspecting characteristics in the state that a gravity is not applied to a weight and a method for inspecting the same. SOLUTION: In a semiconductor acceleration sensor comprising a support for forming an outer periphery, a weight 8 and a beam 11 for connecting both of them formed of a semiconductor substrate 1, a strain detector 8 formed at the beam 11 and changing a resistance value according to an acceleration to be applied to the weight 8, and pedestals 6, 9 connected to both side surfaces of the substrate 1, a through hole 12 is provided along an air gap 7 between the support 10 and the weight 8 at the pedestal 9 of a front surface side of the substrate 1, and inert gas is fed in a direction in parallel along the pedestal 9 of the front surface side of the substrate 1, or fed from a direction perpendicular to the pedestal 9 of the front surface side of the substrate 1 via the hole 12. Thus, it is inspected in the state that the weight 8 is held horizontally, and characteristics are inspected in the state that no gravity is applied to the weight 9.

3. 发明专利

JPH10275836A CHARACTERISTIC MEASURING DEVICE FOR PRESSURE SENSOR AND METHOD FOR PLACING THE SAME 失效
公开(公告)号：JPH10275836A
公开(公告)日：1998-10-13
申请号：JP7970397
申请日：1997-03-31
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO
IPC分类号： G01L27/00 , G01L9/00 , H01L21/66 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a characteristic measuring device for a pressure sensor, which can carry out a high-precision and high-efficiency measurement of characteristics by preventing a mechanical stress and to provide a method for placing the same. SOLUTION: A pressure sensor has a pressure sensor main body 1, a pressure- introducing tube 17 for introducing pressure into a diaphragm and outer terminals 18 for taking out electrical signals which are outputted, in response to the bending of the diaphragm. A characteristic measuring device for measuring pressure characteristics of the pressure sensor has a presure-applying tool 2 provided with a plurality of pressure-introducing holes 22 and a wiring board 4, to which one end of each of elastic elements 7 are fixed. The elastic elements 7 are connected to outer terminals 18 at the other ends and are provided with electrode plates 6 for taking out electrodes. The pressure-introducing tube 17 is inserted into one of the presure-introducing holes 22. The electrode plates 6 provided at one end of each of the elastic elements 7 are made into contact with the outer terminals 18. In this way, the pressure sensor main body 1 is held by the elasticity of the elastic elements 7.

4. 发明专利

JPH10239201A MEASURING APPARATUS FOR CHARACTERISTIC OF PRESSURE SENSOR 失效
公开(公告)号：JPH10239201A
公开(公告)日：1998-09-11
申请号：JP4360197
申请日：1997-02-27
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO
IPC分类号： G01L27/00 , G01L9/00 , G01R29/22 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To provide a measuring apparatus by which a characteristic can be measured with high accuracy and with high efficiency by a method wherein a mechanical stress due to a dislocation or the like is absorbed by a tube and the greater part of a pressure sensor body is exposed so as to be exposed directly to an atmosphere. SOLUTION: Electric signals which are output from external terminals 18 according to a pressure applied to a diaphragm are fetched via IC sockets 41, and a pressure characteristic is measured. Since a pressure supply tube 7 and pressure application jigs 5 are connected by flexible tubes 8 made of a resin such as Teflon or the like, a mechanical stress due to the dislocation of the pressure supply tube 7 is absorbed by the tubes 8, and the mechanical stress is not applied to a pressure sensor. In addition, only the pressure application jigs 5 are situated at the upper part of pressure sensor bodies 1, the greater part of the pressure sensor bodies 1 is exposed, and the pressure sensor bodies 1 are exposed directly to an atmosphere inside a thermostat. Consequently, the temperature of a pressure sensor is changed by following a change in the temperature of the atmosphere inside the thermostat, and the efficiency of the measurement of the pressure characteristic is not lowered.

5. 发明专利

JPH1012688A METHOD FOR INSPECTING SEMICONDUCTOR CHIP 失效
公开(公告)号：JPH1012688A
公开(公告)日：1998-01-16
申请号：JP15966796
申请日：1996-06-20
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： KENO TAKUJI , YAMAMOTO HARUHIKO
IPC分类号： G01N21/88 , G01N21/956 , H01L21/3205 , H01L21/66 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for inspecting a semiconductor chip with which inspection for judgement for goodness is quickly performed for all. SOLUTION: Relating to a method for inspecting a semiconductor chip which is constituted in such a way that an insulating film 2 which has a step is formed on a substrate 1, and a wiring electrode 3 is formed on the insulating film 2, in a final process of semiconductor chip manufacture, a chip flat surface is irradiated with light from above a semiconductor chip at right angles, and irradiating light 8 scans along the chip flat surface, and an intensity distribution of reflected light 9 is detected. By judging a formation condition of wiring electrodes 3a and 3b from the intensity distribution, nondefective/defective of the semiconductor chip is judged.

6. 发明专利

JPH09321111A SEMICONDUCTOR DEVICE AND METHOD OF EVALUATING STEP COVERAGE 失效
公开(公告)号：JPH09321111A
公开(公告)日：1997-12-12
申请号：JP13455796
申请日：1996-05-29
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO
IPC分类号： G01R31/02 , H01L21/3205 , H01L21/66 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which a failure area of step coverage can be easily detected and a method of evaluating the step coverage. SOLUTION: A silicon oxide film 2 is formed on one of main surfaces of a semiconductor substrate 1 and a step 3 is formed by the silicon oxide film 2. An aluminum wiring 4 is formed so as to traverse the step 3. The rear face of the part on which the step 3 is formed in the semiconductor substrate 1 is subjected to anisotropic etching with an alkaline etchant such as KOH solution or the like, thereby forming a recessed part as a diaphragm 5. Pressure is intermittently applied to the diaphragm 5 so that the diaphragm 5 is expanded or returned to the original state, thereby applying stress on the aluminum wiring 4 to disconnect the aluminum wiring 4 when the coverage is incomplete. Consequently, the disconnection of the aluminum wiring 4 is detected by the conduction test.

7. 发明专利

JPH0684886A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0684886A
公开(公告)日：1994-03-25
申请号：JP23610492
申请日：1992-09-03
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO
IPC分类号： H01L21/312
摘要： PURPOSE:To improve reliability of an element and to improve humidity resistance life thereof by improving adhesion of a protection polyimide resin film. CONSTITUTION:A collector region 2, a base region 3 and an emitter region 4 are formed inside a semiconductor substrate 2. An insulation film 5 consisting of a thermal oxide SiO2 film, a base electrode 3a and an emitter electrode 4a are formed on a surface of the semiconductor substrate 1. V-shaped grooves 7 are formed on a surface of the semiconductor substrate 1 to enclose the base region 3 and the emitter region 4. A polyimide region film 6 is laminated on the insulation film 5, the base electrode 3a and the emitter electrode 4a.

8. 发明专利

JPH0444364A ELECTROSTATIC INDUCTION THYRISTOR 失效
公开(公告)号：JPH0444364A
公开(公告)日：1992-02-14
申请号：JP15362590
申请日：1990-06-12
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO , MAEDA MITSUHIDE , SUZUKI YUJI
IPC分类号： H01L29/744 , H01L29/74
摘要： PURPOSE:To prevent the increase of the forward voltage drop by the defect of a crystal lattice so as to enable high-speed switching by forming a lattice defect region from the surface of a substrate to the junction with the second channel region, within the first channel region between the outermost gate region and the anode region. CONSTITUTION:A lattice defect region 7 for shortening the life of a carrier is formed a little to an anode in the middle between the anode region 4 and the outermost gate region 6, from the surface of a substrate to the junction between the first channel region 1 of high resistivity and the second channel region 2 of low resistivity. At the time of turn-off, the lattice defect region 7 vanishes immediately when implanted with positive holes from the anode region 4, so turn-on time becomes short. Though the formation of the region 7 is accompanied with the rise of the resistance value of the region 1, since the resistance value of the region 1 is high, at the time of on, the current flows in the region 2 where resistance value is low, and the forward voltage drop does not increase, and the value equivalent to the case where crystal defect is not formed is obtained.

9. 发明专利

JPH03273685A ELECTROSTATIC INDUCTION SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03273685A
公开(公告)日：1991-12-04
申请号：JP7509090
申请日：1990-03-22
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO
IPC分类号： H01L29/80
摘要： PURPOSE:To enable a turn-off time to be reduced and chip dimensions to be reduced while suppressing increase in ON resistance and power loss by forming a second gate region at a position on an anode side viewing from the gate region which is located at or near a current path between a cathode and an anode and is located near the cathode region. CONSTITUTION:A main current path I passes between a cathode and an anode between a gate region 4. A second gate region 5 is buried near the same gate region 4 at a lower side of the first gate region 4 and at the gate region 4 and at a middle position of the gate region 4 within a high resistivity region 1a of a semiconductor substrate 1. A cathode electrode 12 is formed at the cathode region 2 and an anode electrode 13 is formed at an anode region 3. A first gate electrode 14 is formed at the first gate region 4, a second gate electrode 15 is formed at the second gate region 5, and both gate electrodes 14 and 15 are connected.

10. 发明专利

JPH01209761A ELECTROSTATIC INDUCTION SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01209761A
公开(公告)日：1989-08-23
申请号：JP3487988
申请日：1988-02-17
申请人： MATSUSHITA ELECTRIC WORKS LTD
发明人： YAMAMOTO HARUHIKO
IPC分类号： H01L29/74 , H01L29/749
摘要： PURPOSE:To set the thickness of an insulating layer to a specific value and to shorten a turn-OFF time by providing a bonding pad for a cathode through an insulating layer onto a substrate, and electrically connecting an impurity region to a gate region. CONSTITUTION:A bonding pad section B for a cathode is provided through an insulating layer 7 on a semiconductor substrate 1. The layer 7 is formed, for example, of an SiO2 film. An impurity region (P type region) 2' is formed on the substrate under the section B in the same conductivity type as that of a gate region 2 and electrically connected to the region 2. The region 2 and the region 2' are connected to one in the substrate 1. The region 2' performs a role of connecting a depleted layer and enhancing a breakdown strength. This electrostatic induction thyristor 1 has 6000Angstrom or more of the thickness of the layer 7. Accordingly, a distance between the section B and the region 2' is considerably widened, and the capacitor of a capacitor composed of the section B and the region 2' is reduced. Thus, a capacity between the gate and the cathode is reduced.

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