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1. 发明专利

JPH0918063A OXIDE SUPERCONDUCTOR QUANTUM INTERFERENCE DEVICE 失效
公开(公告)号：JPH0918063A
公开(公告)日：1997-01-17
申请号：JP16169695
申请日：1995-06-28
申请人： MATSUSHITA ELECTRIC IND CO LTD , TOSHIBA CORP , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： ODAKAWA AKIHIRO , FUKUYA HIROYUKI , ENOMOTO YOICHI , TANAKA SHOJI
IPC分类号： G01R33/035 , H01L39/22 , H01L39/24
摘要： PURPOSE: To provide a superconductor quantum interference device by a method wherein Josephson junctions of good quality are obtained at arbitrary places on a substrate with good reproducibility, whereby to make it possible to detect a magnetic field with a high sensitivity. CONSTITUTION: Two or more pieces of Josephson junctions 15 formed by a method, wherein a deteriorated region 13 is formed in the surface of a substrate 11 by a Ga focusing ion beam method and an oxide superconductor 14 is deposited thereon, are formed on the same substrate and an oxide superconductor quantum interference device is constituted of superconducting rings formed by connecting those junctions with each other into a ring shape. Preferably, two or more pieces of such the superconducting rings are formed on the same substrate.

2. 发明专利

JPH09298322A SUPERCONDUCTOR ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH09298322A
公开(公告)日：1997-11-18
申请号：JP11228696
申请日：1996-05-07
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , TOSHIBA CORP , HITACHI LTD
发明人： SAITO KAZUO , FUKUYA HIROYUKI , UTAGAWA TADASHI , ENOMOTO YOICHI
IPC分类号： H01L39/22 , H01L39/24 , H03K19/195
摘要： PROBLEM TO BE SOLVED: To fulfill two or more logic functions with a fewer gates and facilitate the integration by providing a superconductor loop contg. at least one superconductor junction and more closely disposed one or more other superconductor loops. SOLUTION: A thin film 200 is formed by the high frequency sputtering on the whole surface of a substrate 100 machined by FIB so as to match an element pattern on a specified mask, Au 300 is formed as electrodes by the vacuum evaporation. When a superconductor thin film 200 is formed on triangle regions 10 at damaged portions of the substrate 100 by the FIB irradiation, the film 10 along the damaged portions recesses to cause boundaries between two superconductors in a narrow region, thus forming superconductor weak junctions. It is etched with a photo resist pattern used for a mask to ash the photo resist. Thus, two superconductor quantum interference elements and two junction superconductor interference elements are bonded with a common superconductor wiring.

3. 发明专利

JPH09298321A SUPERCONDUCTING ELEMENT 失效
公开(公告)号：JPH09298321A
公开(公告)日：1997-11-18
申请号：JP10966496
申请日：1996-04-30
申请人： TOSHIBA CORP , HITACHI LTD , KOKUSAI CHODENDO SANGYO GIJUTS
发明人： FUKUYA HIROYUKI , SAITO KAZUO , ENOMOTO YOICHI
IPC分类号： G01R33/035 , H01L39/22 , H01L39/24 , H03K19/195
摘要： PROBLEM TO BE SOLVED: To provide a superconducting element wherein logical values can be stably defined irrespective of element characteristics of Josephson junction, a high speed operation is possible and consumption power is low, by using one oxide superconducting layer. SOLUTION: A logic SQID constitutes a superconducting loop constituted of a first superconducting line 11, a second superconducting line 12 arranged in parallel to the first superconducting line 11, and a third and a fourth superconducting lines 13, 14 which connect the part between the first and the second superconducting lines, and contains Josephson junction in at least one of the third and the fourth superconducting lines 13, 14. The line widths W1 , W2 of the first and the second superconducting lines 11, 12 are greater than the gap (d) between both the lines, the line width W2 of the second superconducting line 12 is greater than the line width W1 of the first superconducting line 11, and the line widths W1 , W2 of the first and the second superconducting lines 11, 12 are greater than the line widths W3 , W4 of the third and the fourth superconducting lines 13, 14.

4. 发明专利

JPH0873298A SURFACE TREATMENT OF LN-2BA-3CU-(7-X)0 SINGLE CRYSTAL SUBSTRATE 失效
公开(公告)号：JPH0873298A
公开(公告)日：1996-03-19
申请号：JP24062294
申请日：1994-09-07
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SUMITOMO ELECTRIC INDUSTRIES , TOSHIBA CORP
发明人： KONISHI MASAYA , FUKUYA HIROYUKI , ENOMOTO YOICHI , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C30B29/22 , C01G1/00 , C01G3/00 , C30B33/00 , H01L21/203
摘要： PURPOSE: To obtain a flat surface by heating under a specific gaseous oxygen partial pressure at the time of heating a flat crystal of a oxide superconductor to prevent the generation of projecting structure on the crystal surface. CONSTITUTION: In a copper based oxide superconductor LnBa2 Cu3 O7--x . (Ln is Y, Pr, Sm, 0.3

5. 发明专利

JP2014220257A 酸化物超電導体の製造方法有权
标题翻译：生产氧化物超导体的方法
公开(公告)号：JP2014220257A
公开(公告)日：2014-11-20
申请号：JP2014164242
申请日：2014-08-12
申请人：株式会社東芝 , Toshiba Corp
发明人： ARAKI TAKESHI , HAYASHI MARIKO , YAMADA HIROSHI , FUKUYA HIROYUKI
IPC分类号： H01B13/00 , C01F17/00 , C01G1/00 , C01G3/00
CPC分类号： C01F17/00 , C01G1/00 , C01G3/00 , H01B13/00
摘要：【課題】配向性の向上を図ることができる酸化物超電導体の製造方法を提供する。【解決手段】実施形態に係る酸化物超電導体の製造方法は、下地に配向部分を形成し、前記配向部分上及び前記配向部分以外の部分上に、金属トリフルオロ酢酸塩を含む溶液を接触させて、前記下地上に前記金属トリフルオロ酢酸塩に含まれる金属及びフッ化物を含むゲル膜を形成する工程と、前記下地を熱処理し、前記配向部分上及び前記配向部分以外の部分上に、前記配向部分といずれかの結晶軸が配向した配向超電導層を形成する工程と、を備える。【選択図】図1
摘要翻译：要解决的问题：提供能够改善取向的氧化物超导体的方法。解决方案：制造氧化物超导体的方法包括在基材上形成取向部分并使含有金属三氟乙酸盐的溶液与定向部件和除定向部件之外的部件，以形成含有基材上的金属三氟乙酸盐中含有金属和氟化物的凝胶膜，以及对基材进行热处理以形成定向超导层的步骤，其中定向部分和取向的取向部件和除定向部件以外的部件的晶轴取向。

6. 发明专利

JP2008042609A Demultiplexer and radio receiver 审中-公开
标题翻译：解复用器和无线电接收器
公开(公告)号：JP2008042609A
公开(公告)日：2008-02-21
申请号：JP2006215446
申请日：2006-08-08
申请人： Toshiba Corp , 株式会社東芝
发明人： AIGA FUMIHIKO , KAYANO HIROYUKI , HASHIMOTO TATSUNORI , SHIOKAWA NORITSUGU , KAWAGUCHI TAMIO , FUKUYA HIROYUKI
IPC分类号： H04B1/18 , H01P1/213
CPC分类号： H01P1/2135 , H04B1/0057
摘要： PROBLEM TO BE SOLVED: To provide a demultiplexer capable of demultiplexing for each of adjacent channels.
SOLUTION: The demultiplexer for demultiplexing received signals into first and second channels is characterized in that a center frequency f1 of demultiplexing property which has passed a filter for the first channel and a center frequency f2 of the demultiplexing property which has passed a filter for the second channel satisfy f1
摘要翻译：要解决的问题：提供能够对每个相邻信道进行解复用的解复用器。解决方案：用于将接收信号解复用到第一和第二信道中的解复用器的特征在于已经通过第一信道的滤波器的解复用特性的中心频率f1和已经通过滤波器的解复用属性的中心频率f2 对于第二通道满足f1

7. 发明专利

JPH04192217A SUPERCONDUCTIVE MEMBER 失效
公开(公告)号：JPH04192217A
公开(公告)日：1992-07-10
申请号：JP32185590
申请日：1990-11-26
申请人： TOSHIBA CORP
发明人： YOSHINO HISASHI , YAMAZAKI MUTSUKI , FUKUYA HIROYUKI , KATO MANABU
IPC分类号： H01B12/06
摘要： PURPOSE:To obtain a member, of which lowering of critical current density is small even at a liquid nitrogen temperature, by forming no-superconductive phase in dispersion under the specified condition. CONSTITUTION:No superconductive phase parts caused by radiation of energy beam and having a diameter less than 3mum are arranged in dispersion at spaces less than 10mum to form an oxide superconductive member. These no- superconductive phase parts have an appropriate sizes and the appropriate distribution condition to function effectively as the pinning center of a quantum magnetic flux under the condition cooled to a liquid nitrogen temperature. Consequently, lowering of superconductivity such as a critical current density or the like to be caused by application of the magnetic field can be restricted.

8. 发明专利

JP2015038994A 不揮発性半導体記憶装置有权
标题翻译：非易失性半导体存储器件
公开(公告)号：JP2015038994A
公开(公告)日：2015-02-26
申请号：JP2014183130
申请日：2014-09-09
申请人：株式会社東芝 , Toshiba Corp
发明人： HATTORI SHIGEKI , ICHIHARA REIKA , TERAI KATSUYA , NISHIZAWA HIDEYUKI , TADA TSUKASA , ASAKAWA KOUJI , FUKUYA HIROYUKI , MIKOSHIBA SATOSHI , FUKUZUMI YOSHIAKI , AOCHI HIDEAKI
IPC分类号： H01L21/8247 , H01L21/336 , H01L27/10 , H01L27/115 , H01L27/28 , H01L29/788 , H01L29/792 , H01L45/00 , H01L49/00 , H01L51/05
摘要：【課題】3次元積層メモリにより集積度を向上させた不揮発性半導体記憶装置を提供する。【解決手段】揮発性半導体記憶装置は、第1積層構造体ML1と、第1半導体層SP1と、第1有機膜48p1と、第1半導体側絶縁膜42p1と、第1電極側絶縁膜43p1と、を備える。第1積層構造体ML1は、第1方向に沿って積層された複数の第1電極膜61aと、第1電極間絶縁膜43p1と、を有する。第1半導体層SP1は、複数の第1電極膜61aの側面に対向する。第1有機膜48p1は、複数の第1電極膜61aの側面と第1半導体層SP1との間に設けられ有機化合物を含む。第1半導体側絶縁膜42p1は、第1有機膜48p1と第1半導体層SP1との間に設けられる。第1電極側絶縁膜43p1は、第1有機膜48p1と複数の第1電極膜61aの側面との間に設けられる。第1有機膜48p1は、第1半導体側絶縁膜42p1と結合している。【選択図】図1
摘要翻译：要解决的问题：提供一种通过三维多层存储器提高整合度的非易失性半导体存储器件。解决方案：非易失性半导体存储器件包括第一多层结构ML1，第一半导体层SP1，第一有机膜48p1 第一半导体侧绝缘膜42p1和第一电极侧绝缘膜43p1。第一多层结构ML1具有沿着第一方向堆叠的多个第一电极膜61a和第一电极间绝缘膜62a。第一半导体层SP1面对多个第一电极膜61a的侧面。第一有机膜48p1设置在多个第一电极膜61a和第一半导体层SP1的侧表面之间，并且含有有机化合物。半导体侧绝缘膜42p1设置在第一有机膜48p1和第一半导体层SP1之间。第一电极侧绝缘膜43p1设置在第一有机膜48p1和多个第一电极膜61a之间。第一有机膜48p1耦合到第一半导体侧绝缘膜42p1。

9. 发明专利

JP2006136025A Radio transmitter-receiver 审中-公开
标题翻译：无线电发射机接收机
公开(公告)号：JP2006136025A
公开(公告)日：2006-05-25
申请号：JP2006007606
申请日：2006-01-16
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUYA HIROYUKI , KAYANO HIROYUKI , TERAJIMA YOSHIAKI , AIGA FUMIHIKO , YAMAZAKI MUTSUKI , KATO RIICHI
IPC分类号： H04B1/50
摘要： PROBLEM TO BE SOLVED: To provide a radio transmitter-receiver in which an excellent receiving state is obtained and a transmission frequency band is effectively utilized. SOLUTION: A radio transmitter-receiver which performs radio communication using two or more carrier frequencies includes a plurality of radio transmission/reception units, each of the radio transmission/reception units including at least one radio transmission unit and radio reception unit connected in parallel to one antenna and including one reception signal processing circuit to which a plurality of radio reception units included in the plurality of radio transmission/reception units are connected in parallel, and a superconductor receiver filter and a superconductor transmitter filter are mounted on lateral sides which are different from each other of a cooling member forming a parallelepiped, and are housed in a heat-insulating container while being separated from each other by a distance approximately as long as the wavelength of a transmission signal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种无线电发射机 - 接收机，其中获得良好的接收状态并有效利用发射频带。解决方案：使用两个或多个载波频率执行无线电通信的无线电发射机 - 接收机包括多个无线电发射/接收单元，每个无线电发射/接收单元包括至少一个无线电传输单元和连接的无线电接收单元与一个天线并联，并且包括并行连接多个无线电发送/接收单元中包括的多个无线电接收单元的一个接收信号处理电路，并且超导体接收机滤波器和超导体发送器滤波器安装在侧面它们彼此形成平行六面体的冷却构件彼此不同，并且被容纳在绝热容器中，同时彼此分离距离大约等于透射信号的波长。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2003133807A HIGH FREQUENCY MEMBER 审中-公开
公开(公告)号：JP2003133807A
公开(公告)日：2003-05-09
申请号：JP2001328915
申请日：2001-10-26
申请人： TOSHIBA CORP
发明人： AIGA FUMIHIKO , FUKUYA HIROYUKI , TERAJIMA YOSHIAKI , YAMAZAKI MUTSUKI , KAYANO HIROYUKI , HASHIMOTO TATSUNORI
IPC分类号： H01B12/06 , H01B13/00 , H01P1/203 , H01P1/205
摘要： PROBLEM TO BE SOLVED: To provide a single filter which has a pass check band within a pass band. SOLUTION: This high-frequency member is equipped with a substrate which has a sapphire R face on its one main face, a grounding conductor which is made on the other main face of the substrate, a hair pin type resonator which is made on the one main face, and an output part which holds the resonator, and here the angle ψ that the long side of the resonator forms with the direction of sapphire , on the one main face, is 0 deg.

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