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1. 发明专利

JPH0873298A SURFACE TREATMENT OF LN-2BA-3CU-(7-X)0 SINGLE CRYSTAL SUBSTRATE 失效
公开(公告)号：JPH0873298A
公开(公告)日：1996-03-19
申请号：JP24062294
申请日：1994-09-07
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SUMITOMO ELECTRIC INDUSTRIES , TOSHIBA CORP
发明人： KONISHI MASAYA , FUKUYA HIROYUKI , ENOMOTO YOICHI , SHIOBARA TORU , TANAKA SHOJI
IPC分类号： C30B29/22 , C01G1/00 , C01G3/00 , C30B33/00 , H01L21/203
摘要： PURPOSE: To obtain a flat surface by heating under a specific gaseous oxygen partial pressure at the time of heating a flat crystal of a oxide superconductor to prevent the generation of projecting structure on the crystal surface. CONSTITUTION: In a copper based oxide superconductor LnBa2 Cu3 O7--x . (Ln is Y, Pr, Sm, 0.3

2. 发明专利

JPH0936449A JOSEPHSON ELEMENT 失效
公开(公告)号：JPH0936449A
公开(公告)日：1997-02-07
申请号：JP20900595
申请日：1995-07-24
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SUMITOMO ELECTRIC INDUSTRIES , KYOCERA CORP
发明人： KONISHI MASAYA , MATSUNAGA YOSHINORI , ENOMOTO YOICHI , TANAKA SHOJI
IPC分类号： H01L39/22 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To eliminate the need of preprocessing, e.g. formation of level difference or scratching, by forming a thin film of YBa2 Cu3 O7-x having c-axis extending in parallel with the plane on the upper surface of a substrate of YBa2 Cu3 O7-x having c-axis extending normally to the surface. SOLUTION: A substrate 1 has (001) face of single crystal of YBa2 Cu3 O7-x . A thin film 2 of single crystal of YBa2 Cu3 O7-x having crystal orientation intersecting the substrate perpendicularly is formed in the center. A grain boundary appears on the interface 3 because of incommensurate lattice between single crystals. It is utilized positively as Josephson junction. More specifically, a grain boundary junction is formed on the boundary by differentiating the crystal orientation between the substrate and the thin film. Consequently, it is not required to scratch the substrate at the position of element or form a level difference previously. Since the junction is formed on the entire surface, local machining is not required at all.

3. 发明专利

JPH0782080A PROCESS FOR PRODUCING THIN FILM OF OXIDE SUPERCONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH0782080A
公开(公告)日：1995-03-28
申请号：JP25220093
申请日：1993-09-13
申请人： KOKUSAI CHODENDO SANGYO GIJUTS , SUMITOMO ELECTRIC INDUSTRIES , ASAHI GLASS CO LTD , KYUSHU ELECTRIC POWER , KANSAI ELECTRIC POWER CO
发明人： KONISHI MASAYA , HAYASHI KUNIHIKO , ENOMOTO YOICHI , TANAKA SHOJI , YAMADA YOUJI , OOTSU ISAMI , KANAMORI YASUO , SHIOBARA TORU
IPC分类号： C23C14/08 , C30B23/02 , C30B23/08 , C30B25/06 , C30B25/18 , C30B29/22 , H01L21/203 , H01L39/24
摘要： PURPOSE:To enable the growth of a thin film having arbitrary orientation at an arbitrary substrate temperature and to form a thin film having excellent characteristics on the substrate by using a substrate composed of a single crystal of an oxide superconductor containing rare earth element, etc., and growing a thin film composed of the same material as the substrate in the same direction as the substrate. CONSTITUTION:A substrate to be used in this process is a single crystal of an oxide superconductor containing a rare earth element (Y, La, Er, Eu, Gd, Dy, Sm or Ho), an alkaline earth metal. (Ba, Sr or Mg) and a copper-group metal (Cu, Ni, Co or Zn). A material same as the substrate or obtained by substituting a part of the component with other atoms is grown in the direction same as the growth direction of the substrate. This process enables high- temperature growth of the thin film and the formation of a thin film having excellent superconducting characteristics.

4. 发明专利

JPH05129659A MANUFACTURE OF LIGHT EMISSION DIODE CHIP 失效
公开(公告)号：JPH05129659A
公开(公告)日：1993-05-25
申请号：JP32135591
申请日：1991-11-07
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KONISHI MASAYA
IPC分类号： H01L33/10 , H01L33/30 , H01L33/38
摘要： PURPOSE:To improve output of an LED chip with a thin layer of GaAs uniformly remaining over the whole of a wafer to reduce a rear electrode by forming an AlGaAs over a GaAs substrate and then a GaAs layer over it and by removing the GaAs substrate and etching the AlGaAs layer. CONSTITUTION:A p-type AlGaAs layer 2 and a p-type GaAs layer 3, which are etched away later, are epitaxially grown over a p-type GaAs substrate l, and a p-type AlGaAs layer 4, a p-type AlGaAs layer 5, an AlGaAs light emitting layer 6, an n-type AlGaAs layer 7, and an n-type GaAs layer 8 are formed over those layers. Next, the substrate 1 is removed, and an AlGaAs layer 2 is removed by selective etching, resulting in exposure of a thin GaAs layer 3 to the rear of AlGaAs. Next, electrodes 9, 10 are formed over the GaAs layer 3 and the GaAs layer 8, and the GaAs is selectively removed to obtain an LED wafer equipped with the electrodes 9, 10 of low contact resistance.

5. 发明专利

JPH054892A CARBON BOAT FOR LIQUID-PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPH054892A
公开(公告)日：1993-01-14
申请号：JP18009791
申请日：1991-06-24
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KONISHI MASAYA
IPC分类号： C30B19/06 , H01L21/208
摘要： PURPOSE:To obtain an epitaxial substrate without any remaining of a solution for growth by forming a slider of a carbon boat from a slider substrate and independent solution reservoirs, providing slopes at the lower tips of the solution reservoirs and enabling a smooth sliding state. CONSTITUTION:The subject carbon boat is formed from a substrate holder 6 having a substrate housing part 5 and a slider 1 movable in the longitudinal direction of the aforementioned holder 6. The slider 1 is formed from a slider substrate 9 and solution reservoirs 2 and 3 for epitaxial layers and moved in the vertical directions relatively to the substrate holder 6. The width of the lower opening in the above-mentioned slider 1 is smaller than that of substrates 4 and the slider substrate 9 is equipped with the solution reservoirs 2 and 3 having ascending slopes 12 in the undersurfaces in the sliding direction. Thereby, a residual solution on the substrate surface after epitaxial growth is reduced even if there is a difference in thickness of the substrates 4 in carrying out the epitaxial growth on the substrate 4.

6. 发明专利

JPH03241825A MANUFACTURE OF ALGAAS WAFER 失效
公开(公告)号：JPH03241825A
公开(公告)日：1991-10-29
申请号：JP4026890
申请日：1990-02-20
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KONISHI MASAYA
IPC分类号： C30B19/00 , H01L21/208
摘要： PURPOSE:To almost equalize the mixed crystal ratio on the surface and the rear surface as well as minimizing the ratio all over the whole wafer by a method wherein one surface of a GaAs substrate is brought into contact with the first depositing solution to deposit the first AlGaAs epitaxial layer and then the other surface is brought into contact with the second deposited solution to partially remove the surface by melting back process so as to deposit the second AlGaAs epitaxial layer. CONSTITUTION:One surface of a GaAs substrate 6 is brought into contact with the first depositing solution to deposit the first AlGaAs epitaxial layer by slow cooling process; the other surface of the substrate 6 is brought into contact with the second depositing solution to be heated so as to partially remove the substrate 6 by melting back (a) process; furthermore, the second AlGaAs epitaxial layer is deposited (b) on the residual substrate 6. The AlGaAs epitaxial layers are deposited conforming to the program and using the depositing jig as shown in the figure. At this time, the applicable substrate 6 in thickness of about 180mum is melted away out of the total thickness of 300mum and then the second AlGaAs layer 200mum thick is epitaxially deposited and after melting away the part about 60mum thick out of the rear surface of the residual part of the substrate 6 in thickness of 120mum and the first AlGaAs layer formed by the first deposition, the second AlGaAs layer is epitaxially deposited.

7. 发明专利

JPH02157185A METHOD AND DEVICE FOR LIQUID PHASE EPITAXY 失效
公开(公告)号：JPH02157185A
公开(公告)日：1990-06-15
申请号：JP31015288
申请日：1988-12-09
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KONISHI MASAYA
IPC分类号： C30B19/06 , H01L21/208
摘要： PURPOSE:To eliminate defective liquid discharge and to obtain multilayered epitaxial wafers having high quality by discharging the residual soln. on substrates by means of a wiper operated from an outer side at the time of substituting the growth soln. on the substrates disposed vertically in many stages. CONSTITUTION:A rod 9 is operated to rotate a part 6 for housing the soln. before growth until a flow passage 13 in the bottom is aligned to a through-hole 17 of a partition plate 12. TM soln. 5 for growth is then introduced into a part 4 for housing the soln. at the time of growth and the epitaxial growth on the substrates 3 is started in a cassette 14 (figure a). The housing part 4 is rotated, upon ending of the growth, until the flow passage 16 in the bottom is aligned to the through-hole 18 of the partition plate 12 and the soln. after the end of the growth is discharged 7. The wiper 2 is rotated simultaneously by operating the rod 8 to discharge approximately the whole volume of the soln. 5 on the substrate 3 surface. The housing part 6 is again rotated to supply the fresh soln. 5' for growth into the housing part 4 and the growth of the 2nd layer is started (figure b). The multilayered epitaxial wafers are grown by repeating the above-mentioned stages and finally the soln. 5' is discharged as shown in the figure c to end the growth.

8. 发明专利

JPH05217926A SLIDE BOAT FOR LIQUID PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPH05217926A
公开(公告)日：1993-08-27
申请号：JP5665892
申请日：1992-02-06
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KONISHI MASAYA
IPC分类号： C30B19/06 , H01L21/208
摘要： PURPOSE:To prevent an extraordinary growth due to winding of an oxide film, by providing a melt boat with a double structure consisting of an outer melt boat and an inner melt boat which is inserted into the outer melt boat and is formed elevatably and installing a discharge hole for discharging a material melt into the outer melt boat on the bottom of the inner melt boat. CONSTITUTION:An inner melt boat 4 is inserted into an outer melt boat 3 and a melt boat with a double structure is formed. The reason why the melt boat with the double structure is formed is that an oxide film disturbing an epitaxial growth is left in the inner melt boat 4 and a material melt is moved to the outer melt boat 3 and then the epitaxial growth is performed. The material melt is moved by an up-and-down movement of the inner melt boat 4 inserted into the outer melt boat 3. Further, a discharge hole 4a for discharging the material melt is installed on the bottom of the inner melt boat 4. By this discharge hole 4a, the material melt can be discharged into the outer melt boat 3 when the inner melt boat 4 is pushed upward.

9. 发明专利

JPH02192487A METHOD FOR LIQUID-PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPH02192487A
公开(公告)日：1990-07-30
申请号：JP1208189
申请日：1989-01-21
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KONISHI MASAYA , HANEKI YOSHIAKI
IPC分类号： C30B19/00 , C30B29/42
摘要： PURPOSE:To obtain homogeneous epitaxial growth over the whole surface of a disklike substrate by providing a conical surface having a slope extending upward in the upper part of each ring for holding the substrate and holding the disklike substrate on the conical surface in linear contact therewith. CONSTITUTION:A material for carrying out epitaxial growth is charged into a crucible 5 and heated to provide a melt 4 for growth and many chambers are provided with partition plates 8 having a slit 6 in part of the periphery thereof to assemble a cassette 3 containing many sets of a ring 1 made of carbon and a substrate 2. In this case, the substrate 2 is brought into linear contact with the conical surface of the ring 1. If the cassette 3 is lowered into the crucible 5, the solution in the bottom of the crucible 5 is pushed, passed through a clearance between the crucible 5 and the cassette 3 and raised. The raised solution is passed from the slit 6 through openings 7 of the ring 1 made of the carbon and admitted into the respective chambers of the cassette 3 to fill the interiors of the chambers. The substrate is then pushed up to provide a floated state separated from the rings 1. The flow of the melt is completely distributed to the whole surface without interference by the rings 1 and brought into contact with the surfaces of the substrates 2.

10. 发明专利

JP2000106043A OXIDE SUPERCONDUCTIVE ELEMENT WIRE AND ITS AGGREGATE OXIDE SUPERCONDUCTOR AND THEIR MANUFACTURE 失效
公开(公告)号：JP2000106043A
公开(公告)日：2000-04-11
申请号：JP20041999
申请日：1999-07-14
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KONISHI MASAYA , NAKAHARA TSUNEO , SATO KENICHI
IPC分类号： H01B12/06 , H01B12/08 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide an oxide superconductive element wire, wherein a superconductive current flows much, a freedom in an aggregate shape is enhanced and an inductance is easily designed. SOLUTION: This element wire 20 has a base material 1, an intermediate layer 2 and an oxide superconductive thin film 3. Its cross section, perpendicular to the longitudinal direction of the long and flexible base material 1, is in a circular shape or in an equilaterally polygonal shape. The outer periphery of the base material 1 is coated with the intermediate layer 2 and the further outer periphery is coated with the oxide superconductive thin film 3. The oxide superconductive thin film 3 has a portion aligned in the direction of a crystal axis and the portion aligned in the direction of the crystal axis ranges to the element wire 20 in its longitudinal direction.

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