专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH03104204A CHIP TYPE ELECTRONIC COMPONENT 失效
公开(公告)号：JPH03104204A
公开(公告)日：1991-05-01
申请号：JP24373689
申请日：1989-09-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： AOTO MINEYASU , SUGIURA NORIYUKI , TERADA TERUHISA , YAMAMURA SHIGENARI , KOBAYASHI NOBUO , OMURA TORU , TASAKA AKIHIRO
IPC分类号： H01G4/252 , H05K1/18 , H05K3/34
摘要： PURPOSE:To effectively mount in a high density by coating at least lower surfaces of right and left electrodes in contact with a mounting board with conductive paint, and forming parts of electrodes. CONSTITUTION:A capacitor element 2 having conductors, metal layers or metal foils to become electrodes is provided, a metal material is thermal sprayed to both end faces of the element to form electrode leads as electrode parts 1, and plating layers 4 are formed on the outermost layers of the parts 1. Further, at least lower surface part of both the right and left electrodes in contact with a mounting board are coated with conductive paint 3 as a chip capacitor. The paint 3 is softened at the time of mounting in a high density, and a conductive material in the paint is diffused into the layers 4 and cream solder to accelerate fusion to each other.

2. 发明专利

JPH02222123A MANUFACTURE OF LAMINATED THIN FILM CAPACITOR 失效
公开(公告)号：JPH02222123A
公开(公告)日：1990-09-04
申请号：JP4223589
申请日：1989-02-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKADA YUSUKE , OMURA TORU
IPC分类号： H01G4/33 , H01G4/06 , H01G4/30 , H01L27/01
摘要： PURPOSE:To reduce in size and to increase in capacitance of the above capacitor by voltage-processing a dielectric and an electrode each time they are alternately laminated. CONSTITUTION:A lower electrode 2A of Al is formed on the upper surface of a board 1 of glazed ceramics having 0.7mm in thickness of 2000Angstrom by a sputtering SP method by providing an exposed part 1a, and a dielectric 3A of a Ta2O5 thin film is formed on the electrode 2A in thickness of 3000Angstrom including an adjacent part 3a to the end of the electrode 2A of the part 1a by an SP method. An upper electrode 2B of Al is formed in thickness of 500Angstrom on the remainder of the part 1a and the dielectric 3A by an SP method except the exposed part 3b on the opposite end of the part 1a. Then, a pulse voltage of 30V, 100msec is applied between the electrodes 2A and 2B for 2sec to remove the electrode 2B on the upper surface part of a defect of the dielectric 3A, and a dielectric 3B of a Ta2O5 thin film is formed in thickness of 3000Angstrom on the electrode 3B and the part 3b of the dielectric 3A by an SP method. Thus, a thin film capacitor having a small size and a large capacitance can be obtained.

3. 发明专利

JPH01114016A METALLIZED FILM CAPACITOR 失效
公开(公告)号：JPH01114016A
公开(公告)日：1989-05-02
申请号：JP27246087
申请日：1987-10-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OMURA TORU , HAGA MIKIO
IPC分类号： H01G4/18
摘要： PURPOSE:To suppress the growth of a transparent insulating film, to reduce the size and the cost of a metallized film capacitor by employing a dielectric film and electrodes formed by depositing manganese or alloy containing manganese on the film. CONSTITUTION:Manganese or an alloy of manganese and platinum, nickel, aluminum or the like is deposited to form an electrode 2 on a dielectric film 1, and a metallized film capacitor is compose by employing the electrodes 2. Thus, the manganese having low specific resistance of oxide is employed as the electrode thereby to reduce the concentration of an electric field to a boundary between the electrodes and an insulating film. Accordingly, the reduction of the effective area of the electrode 2 due to the generation of the transparent insulating film when it is employed as a high potential trend, i.e., the reduction of the electrostatic capacity of the capacitor can be suppressed. Thus, the high potential trend design of the capacitor can be performed, thereby reducing the size and the cost of the capacity.

4. 发明专利

JPS6457703A METALLIZED FILM CAPACITOR 失效
公开(公告)号：JPS6457703A
公开(公告)日：1989-03-06
申请号：JP21567187
申请日：1987-08-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OMURA TORU , HAGA MIKIO
IPC分类号： H01G4/015 , H01G4/18
摘要： PURPOSE:To inhibit the reduction of the electrostatic capacitance of a capacitor by using a metallized film composed of a dielectric film, a thin-film layer being evaporated onto the dielectric film to a stratiform shape and consisting of manganese and a conductive layer made up of a metal or an alloy having a specific resistivity value. CONSTITUTION:A metallized film capacitor is constituted of a dielectric film 1, a thin-film layer 2 being formed onto said dielectric film to a stratiform shape through evaporation and composed of manganese and a conductive layer 3 consisting of a metal or an alloy having resistivity of 1X10 OMEGA.cm or less. A capacitance reduction rate is lowered extremely, and the value of initial tan delta is also improved.

5. 发明专利

JPS63142624A CAPACITOR AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JPS63142624A
公开(公告)日：1988-06-15
申请号：JP28923686
申请日：1986-12-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KINOSHITA NAGAO , ICHIIE TOSHIFUMI , YAMADA KENJI , OMURA TORU
IPC分类号： H01G4/18

6. 发明专利

JPH02222124A MULTILAYER THIN FILM CAPACITOR 失效
公开(公告)号：JPH02222124A
公开(公告)日：1990-09-04
申请号：JP4224289
申请日：1989-02-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OMURA TORU , TAKADA YUSUKE , KINUTA YUKIO , HAGA MIKIO
IPC分类号： H01G4/33 , H01G4/06 , H01G4/30 , H01L27/01
摘要： PURPOSE:To reduce in size, weight and cost of the above capacitor by providing external electrodes at both ends of an insulating board by a low pressure plasma spraying method. CONSTITUTION:A thin film laminate 4 in which three inner electrode layers 2A, 2B, 2C of metal material such as aluminum, copper, gold, etc., and two dielectric layers 3A, 3B are alternately laminated and the layers 2A-2C are extended and laminated at upper and lower layers in the end direction of opposite side of an insulating board 1 made of alumina, polyimide, or the like, is formed on the upper surface of the board 1. The laminate 4 and a protective film 5 covering the board 1 of the periphery are formed, and outer electrodes 6A, 6B are formed at both ends of the board 1 including the ends of the layers 2A-2C by a low pressure plasma splaying method. The film 5 is made of organic thin film made of silicon nitride, organic film made of epoxy resin, and the electrodes 6A, 6B are made of metal such as copper, nickel, gold, etc. Thus, the cost of the material and the number of steps can be reduced, and reduction in size, weight and cost can be realized.

7. 发明专利

JPH02121313A MULTILAYER THIN FILM CAPACITOR 失效
公开(公告)号：JPH02121313A
公开(公告)日：1990-05-09
申请号：JP27406888
申请日：1988-10-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HAGA MIKIO , OMURA TORU , YOSHIDA ZENICHI
IPC分类号： H01G4/33 , H01G4/06
摘要： PURPOSE:To make it possible to markedly cut down the cost of material and the number of man-hours, and to contrive accomplishment of a small-sized and lightweight capacitor at low cost by a method wherein an inner electrode layer of three or more layers and a dielectric layer of two or more layers are alternately laminated on one side or both sides of an insulated substrate, and an external electrode is formed using a dry type technique on both end parts of the insulated substrate containing the extended end part of the inner electrode layer. CONSTITUTION:A three-layer inner electrode layer 2 and a two-layer dielectric layer 3 are alternately laminated on one surface of an insulated substrate 1. The inner electrode layer 2 is arranged in such a manner that it is positionally deviated for every layer against the dielectric layer 3 respectively in the direction of both ends of the insulated substrate, and they are opposingly positioned pinching the adjacently positioned inner electrode layer 2 and the dielectric layer 3. Outer electrode 5 are formed using a dry-type technical method on both en parts of the insulated substrate 1 including the end part of the extended section of each inner electrode layer 2 which is not covered by a protective film 4. As the dry type technical method to form the outer electrodes 5, spraying method, a sputtering method, a vacuum vapor-deposition method and the like are applicable.

8. 发明专利

JPH0334506A CAPACITOR 失效
公开(公告)号：JPH0334506A
公开(公告)日：1991-02-14
申请号：JP17019189
申请日：1989-06-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KINUTA YUKIO , KATSUBE ATSUSHI , OMURA TORU , HAGA MIKIO
IPC分类号： H01G4/33 , H01G4/06
摘要： PURPOSE:To make a capacitor small-sized and lightweight and to lower its cost by a method wherein two or more layers of internal electrodes of a specific film thickness, formed by a dry process and one or more layers of dielectrics are overlapped alternately on one side or on both sides of an insulating substrate whose average roughness in the center line is specific in order to sharply relax an influence of the surface roughness of the insulating substrate on a characteristic. CONSTITUTION:A film thickness of a first layer of an internal electrode formed by using a physical vapor growth method such as a sputtering method or the like is set at 1000Angstrom or higher; a substrate whose cost is comparatively low and whose average roughness in the center line is 0.1 to 1.0mum is utilized fully in order to sharply lower costs of a capacitor. That is to say, an internal electrode layer 2, composed of aluminum, having a film thickness of 3000Angstrom is formed, as a first layer of an internal electrode, on an alumina ceramic substrate 1; then, a dielectric layer 3, composed of strontium titanate, having a film thickness of 5000Angstrom is formed by using a sputtering method. In succession, an internal electrode layer, composed of aluminum, having a film thickness of 5000Angstrom is formed as a second layer of the internal electrode.

9. 发明专利

JPH02305424A MANUFACTURE OF LAMINATED THIN FILM CAPACITOR 失效
公开(公告)号：JPH02305424A
公开(公告)日：1990-12-19
申请号：JP12699389
申请日：1989-05-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TAKADA YUSUKE , OMURA TORU , KINUTA YUKIO , HAGA MIKIO
IPC分类号： H01G4/33 , H01G4/06 , H01G4/30 , H01L21/31 , H05K3/14
摘要： PURPOSE:To manufacture a thin film capacitor posing no problem such as step coverage etc., at all by a method wherein the patterns of dielectrics and electrodes are formed using masking process as well as proper gaps are made between a substrate and evaporation marks. CONSTITUTION:In order to laminate dielectrics 3a-3c alternately with electrodes 2a-2c as least by one layer on a substrate 1 whereon a lower electrode 2a is formed, the patterns of the dielectrics 3a-3c and the electrodes 2a-2d are formed using masking process as well as proper gaps are made between the substrate 1 and evaporation masks 4a-4c. Through these procedures, the edge parts of bonded film can be made gentle also avoiding any notches. Accordingly, such problems as the connection of electrodes on edge part as well as the insulation breakdown of the dielectrics can be almost settled.

10. 发明专利

JPS63249315A METALLIZED FILM CAPACITOR 失效
公开(公告)号：JPS63249315A
公开(公告)日：1988-10-17
申请号：JP8324287
申请日：1987-04-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OMURA TORU , KINOSHITA NAGAO
IPC分类号： H01G4/18

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式