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1. 发明专利

JPH08225929A FORMATION OF THIN FILM USING LASER ABRATION AND LASER ABRATION DEVICE 失效
公开(公告)号：JPH08225929A
公开(公告)日：1996-09-03
申请号：JP3487695
申请日：1995-02-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHIKAWA YUKIO , YOSHIDA ZENICHI
IPC分类号： C23C14/28
摘要： PURPOSE: To provide a thin film forming method using a laser abration, by which the thin film having uniform thickness and composition in the wide area can be formed. CONSTITUTION: The laser beam emitted from a laser beam oscillator 1 is reflected by galvano mirrors 3, 5 and further, introduced to a condensor lens 7 arranged on moving mechanism movable in two directions mutually crossing at right angle in the plane. Further, the laser beam irradiates a round disk target 12 arranged parallel with the moving range in the moving mechanism 9, 10 in a vacuum vessel 11. By this method, the thin film having uniform film thickness and small difference of the composition can be formed in large area on a substrate.

2. 发明专利

JPH05331632A LASER ABRASION DEVICE AND FORMATION OF THIN FILM 失效
公开(公告)号：JPH05331632A
公开(公告)日：1993-12-14
申请号：JP14065692
申请日：1992-06-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANAKA KUNIO , ONISHI YOICHI , YOSHIDA ZENICHI , NISHIKAWA YUKIO
IPC分类号： C23C14/08 , C23C14/00 , C23C14/28 , C30B23/02 , H01F10/20 , H01F41/20
摘要： PURPOSE:To provide the laser abrasion device for forming an oxide thin film which can control the crystal state of the formed film at a relatively low temp., can sufficiently decrease the oxygen defects of the formed film and does not require the high-temp. annealing for improving an oxidation state. CONSTITUTION:This device has a vacuum chamber 1 which has a discharging means 5, a gas introducing port 6 for introducing an oxidation reactive gas and a light receiving window 7, a target holder 2' which is installed in this vacuum chamber 1 and holds a target 2 consisting of a film forming material of an oxide, a holder 3 for a molding to be formed with the thin film which is installed in the position facing this target holder 2' and holds the molding 4 to be formed with the thin film and a short wavelength laser 8 which irradiates the target 2 in the vacuum chamber 1 with a short wavelength laser beam 13 through the light receiving window 7 from the outside of the vacuum chamber 1.

3. 发明专利

JPH05247633A 失效
公开(公告)号：JPH05247633A
公开(公告)日：1993-09-24
申请号：JP4534492
申请日：1992-03-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA ZENICHI
IPC分类号： C23C14/28
摘要： PURPOSE:To provide a laser abrasion device used in forming the film of a superconductor, ferroelectric, etc., to be utilized for a thin-film device and capable of taking only the ion out of the local plasma produced when the device is irradiated with a laser beam. CONSTITUTION:A laser oscillator 1, a lens 3 for condensing a laser beam 2, a vacuum vessel 5, a laser beam inlet window 4 set in the vessel 5, a target 7 to be irradiated with a laser beam in the vessel 5 and a substrate holder on the target 7 are provided to the device. Consequently, only the ion generated by the laser beam irradiation is deposited on a substrate 9, and the granular lump occluded in the thin film is removed.

4. 发明专利

JPH04359853A ION SOURCE 失效
公开(公告)号：JPH04359853A
公开(公告)日：1992-12-14
申请号：JP13464091
申请日：1991-06-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA ZENICHI
IPC分类号： H01J27/16 , H01J37/08
摘要： PURPOSE:To provide an advanced microwave ion source having a large bore. CONSTITUTION:Microwave plasma of large bore is generated by a coaxial tube 15 of door knob type and a permanent magnet 20 installed at its open end, and a small-sized and large bore plasma is formed by impressing a positive potential on the open end. Accordingly ions can be taken out as a beam from this plasma.

5. 发明专利

JPH04142719A MANUFACTURE OF MAGNETIC THIN FILM 失效
公开(公告)号：JPH04142719A
公开(公告)日：1992-05-15
申请号：JP26692690
申请日：1990-10-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TANAKA KUNIO , NISHIKAWA YUKIO , YOSHIDA ZENICHI , KOMATA YUJI , NAKAMURA KAZUO
IPC分类号： C23C14/14 , C23C14/34 , G11B5/31 , H01F41/16
摘要： PURPOSE:To form a ferrite magnetic film, having spinnel type crystal structure, on a substrate by a method wherein a laser beam is made to irradiate on the target of a ferrite sintered body containing at least one of Ni, Zn and Mn through a vacuum sealing window provided in a vacuum vessel. CONSTITUTION:A target stand 3 is attached to the substrate 12 in a vacuum vessel 11, and a target 14 of a ferrite sintered body is placed on the target stand. A laser beam 16 emitted from the pulse laser 14 located on the outside of the vacuum vessel, is condensed by a lens 17, and it is made to irradiate on the target through the vacuum window 15 provided in the vacuum vessel. High energy of clusters, ions, atoms and the like fly out from the surface of the target, they are deposited on the surface of the substrate, a ferrite magnetic film 11 of spinnel type crystal structure is obtained, and the compositional deviation of each element from the target is very small. Besides, when the substrate is heated up to 200 to 450 deg.C, the structure of crystal can be improved. Also, when O2, N2O, NO2 and the like are introduced into the vacuum vessel, and also pressure is brought to 1X10 Torr or lower, the defect of oxygen in the film is reduced, and soft magnetic characteristics can be improved further.

6. 发明专利

JPH0436466A MICROWAVE PLASMA GENERATOR 失效
公开(公告)号：JPH0436466A
公开(公告)日：1992-02-06
申请号：JP14470890
申请日：1990-06-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA ZENICHI
IPC分类号： H05H1/46 , C23C14/35 , H01L21/203 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To stably maintain an electric discharge even under a low gaseous pressure and to form high-density plasma by electrically insulating a coaxial tube and a vacuum chamber, and impressing a high frequency to the coaxial tube. CONSTITUTION:The microwaves oscillated from a magnetron 11 propagate in the coaxial tube 12 and pass a glass plate 18. These microwaves propagate in a door knob 12' and are introduced onto a target 14. Gaseous Ar or the like is introduced from a gas introducing port 22 into the vacuum chamber 21 to regulate the gaseous pressure therein. An electric discharge is then started. The position of a starve tube 13 is changed to bring the plasma onto the target 14. A magnetic field is impressed on the target 14 by the effect of a concentrical permanent magnet 15, and the plasma is captured in the magnetic gap on the ring, by which the discharge of a magnetron mode is maintained. The ions in the plasma on the target 14 strike the surface of the target 14 and release the particles of the target 14 when a high frequency is impressed to the coaxial tube 12 by a power source 28.

7. 发明专利

JPH03291373A LASER SPUTTERING DEVICE 失效
公开(公告)号：JPH03291373A
公开(公告)日：1991-12-20
申请号：JP9361490
申请日：1990-04-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHIKAWA YUKIO , YOSHIDA ZENICHI , TANAKA KUNIO
IPC分类号： C23C14/34 , C23C14/28
摘要： PURPOSE:To deposit a thin film which is uniformized in a film thickness distribution on a substrate by respectively condensing the pulsed laser beams from a laser oscillator by plural condenser lens parts and simultaneously irradiating the plural points of a target with these laser beams. CONSTITUTION:The pulsed laser beams 2 emitted from the laser oscillator 1 are introduced via a collimator lens group 3 to a reflecting mirror 4 from which the laser beams are guided to a condenser optical system 5. The plural condenser lens parts 5a having the same focal distance are disposed in parallel in the condenser optical system 5 and the target 7 in a vacuum chamber 6 is irradiated with the condensed respective laser beam via a vacuum sealing window 8 to simultaneously work the plural points and to form the thin film 10 on the substrate 9 by a sputtering effect. The thin film having the uniformized film thickness distribution is formed by adequately setting the spacing between the condenser lens parts 5a.

8. 发明专利

JPH0353065A SPUTTERING DEVICE 失效
公开(公告)号：JPH0353065A
公开(公告)日：1991-03-07
申请号：JP18784989
申请日：1989-07-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA ZENICHI , TANAKA KUNIO
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34 , H01L21/203 , H05H1/46
摘要： PURPOSE:To uniformly form plasma for sputtering on the surface of a base plate having the large area by forming the discharge chamber of a sputtering device into a specified shape and also arranging a plurality of permanent magnets alternately different in polarities to the outer circumference and providing a plurality of counter cathodes to the inside of the discharge chamber. CONSTITUTION:The discharge chamber 11 of a sputtering device is formed into a shape having a curvature projected to the center from the four parts of the side faces. The cylindrical cathodes 14, 14, 14', 14' are provided to the four corners thereof and a plurality of permanent magnets 15 different in the polarities are arranged along the curvature of the outer circumference. Further both an introduction port 12 of gas for generating plasma and a vacuum exhaust port 13 for the discharge chamber are provided to the discharge chamber 11. A target 17 is arranged oppositely to a sample 18 to be treated and high-frequency voltage is impressed to an electrode 15 for sputtering with a target 17 fitted thereto by a high-frequency power source 19. Discharge is uniformly generated in the wide space by action of both the cusp magnetic fields 23 formed by a plurality of permanent magnets 15 and the electric fields 24 formed by the cathodes 14, 14' and the side walls. High-density plasma is not generated on one part of the target 17 but generated on the whole surface thereof. The whole surface of the sample 18 is uniformly sputtered in uniform consumption of the target.

9. 发明专利

JPH02166277A LASER SPUTTERING DEVICE 失效
公开(公告)号：JPH02166277A
公开(公告)日：1990-06-26
申请号：JP32264788
申请日：1988-12-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： YOSHIDA ZENICHI , TANAKA KUNIO
IPC分类号： C23C14/34
摘要： PURPOSE:To prevent a vacuum sealing window from being stuck with a sputtered material by covering the vacuum sealing window of a vacuum vessel by a disk fitted with a slit and allowing r.p.m. of the driving motor of a disk to coincide with the repeated frequency of pulse laser beams via a synchronizing circuit. CONSTITUTION:A disk 19 fitted with a slit is provided to the vacuum side of the vacuum sealing window 18 of a vacuum vessel 11 so as to cover the whole window therewith and this disk 19 is rotated by a driving motor 20. Both the driving motor 20 and a laser 15 are connected to a synchronizing circuit 22 by a wiring 21 and r.p.m. of the driving motor 20 is allowed to coincide with the repeated frequency of laser beams. When laser beams 16 are passed through the vacuum sealing window 8, the disk 19 is regulated so that the slit thereof is just reached the laser beams. Thereby a target 12 can be irradiated with the laser beams 16 but the sputtered material flown to the direction of the vacuum sealing window 18 is cut by the disk 19. Therefore the target 12 can be stably irradiated by the laser beams 16 for a long time.

10. 发明专利

JPS63299338A PLASMA TREATMENT EQUIPMENT 失效
公开(公告)号：JPS63299338A
公开(公告)日：1988-12-06
申请号：JP13523587
申请日：1987-05-29
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： MAEDA YORIHISA , SUZUKI NAOKI , YOSHIDA ZENICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To enable a treatment excellent in uniformity, by arranging magnets so as to obtain a magnetic field distribution satisfying the cycrotron resonance condition in the vicinity of the aperture part of a discharge tube, and arranging magnets so as to obtain a magnetic field whose intensity becomes zero in the vicinity of the surface of an object to be processed. CONSTITUTION:An antenna 12 radiates microwave against a discharge tube 1 contained in a plasma generating chamber 2. A magnetic field generating equipment 4 is arranged so as to generate a magnetic field larger than or equal to 875 gauss in the vicinity of the aperture part of the plasma generating chamber 2. An magnet 9 is arranged on the opposite side of the plasma generating chamber 2 with respect to a plane type object 8 to be processed 8 in the manner in which the magnetic field intensity becomes zero on the surface of the object 8 to be processed. Electron cycrotron resonance plasma is generated in the vicinity of the discharge tube 1, and the magnetic field intensity becomes zero in the vicinity of the surface of the object 8 to be processed. Thereby, the treatment excellent in uniformity is enabled.

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