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    • 2. 发明专利
    • CAPACITOR AND MANUFACTURE THEREOF
    • JPH04223315A
    • 1992-08-13
    • JP40650990
    • 1990-12-26
    • MATSUSHITA ELECTRIC IND CO LTD
    • ISHIKAWA ISAMUKINUTA YUKIOKUME NOBUYUKIMINO NORIHISAOGAWA KAZUFUMISOGA SANEMORI
    • B05D1/20H01G4/08H01G13/00
    • PURPOSE:To make a small-sized capacitor of a large capacitance and to improve high frequency characteristics by forming a chemical adsorption single molecular film, consisting of a chlorosilane interfacial activating agent through the intermediary of an optional thin film, or a chemical adsorption molecular accumulated film on the surface of a porous conductive substance as a conductive layer. CONSTITUTION:A metal electrode, which is formed by cutting and supersonic welding a sheet of surface-roughened aluminum etching foil, is dipped into pure water, a hydration treatment is conducted, and a film is formed. On the other hand, using a chlorosilane surface activating agent, a film-formed metal electrode 1 is dipped. A dielectric layer of chemical adsorption single mocular film 2, consisting of a chlorosilane interfacial activating agent, is formed on the metal electrode surface 1, and it is used as an element. This element is dipped into a manganese sulfate aqueous solution, and manganese dioxide is formed on the surface of the aforesaid element. Further, a polypyrrole film is formed by conducting constant-current electrolytic polymerization, it is dipped into colloidal carbon, and a conductive film is formed by coating silver paste, and a counter electrode is taken out from a part of the film.
    • 3. 发明专利
    • MANUFACTURE OF CAPACITOR
    • JPH04155810A
    • 1992-05-28
    • JP28120090
    • 1990-10-18
    • MATSUSHITA ELECTRIC IND CO LTDJAPAN CARLIT CO LTD
    • ISHIKAWA ISAMUKINUTA YUKIOKUME NOBUYUKIHASHIZUME KENICHIYAMAMOTO HIDEOISA ISAO
    • H01G4/33H01G4/06
    • PURPOSE:To improve high frequency characteristics of the title capacitor of small type and large capacitance by a method wherein, after an electrodeposition operation has been conducted by stepwise sintering electrodeposition voltage, a polyamic acid thin film is dehydrated by heating. CONSTITUTION:A porous conductive substrate is obtained by jointing an aluminum lead to aluminum-etching foil whose surface area is roughened to about 50 times. Then, 40 parts of methanol, which is a bad solvent of polyamic acid, is added to 60 parts of polyamic acid salt solution. An electrodeposition solution is poured into a stainless steel container, a substrate is anodized by dipping it into the above-mentioned solution, the container is formed into the cathode, and a polyamic acid thin film is formed on the surface of the substrate by applying 10V voltage for three minutes, then 30V voltage for three minutes, and moreover 50V voltage for three minutes. Then, a polyimide thin film is formed by heating at 250 deg.C for two hours, and a capacitor element is formed. A polypyrrole thin film is formed by chemical oxidation polymerization, a polypyrrole thin film is formed by conducting constant- current electrolytic polymerization using the polypyrrole thin film as the anode, and a conductive layer is formed by dipping the above-mentioned polypyrrole thin film into colloidal carbon and by coating silver paste. A counter electrode is taken out from a part of the conductive layer, an outer covering is provided by epoxy resin, and a capacitor is completed.
    • 4. 发明专利
    • CAPACITOR
    • JPH0334506A
    • 1991-02-14
    • JP17019189
    • 1989-06-30
    • MATSUSHITA ELECTRIC IND CO LTD
    • KINUTA YUKIOKATSUBE ATSUSHIOMURA TORUHAGA MIKIO
    • H01G4/33H01G4/06
    • PURPOSE:To make a capacitor small-sized and lightweight and to lower its cost by a method wherein two or more layers of internal electrodes of a specific film thickness, formed by a dry process and one or more layers of dielectrics are overlapped alternately on one side or on both sides of an insulating substrate whose average roughness in the center line is specific in order to sharply relax an influence of the surface roughness of the insulating substrate on a characteristic. CONSTITUTION:A film thickness of a first layer of an internal electrode formed by using a physical vapor growth method such as a sputtering method or the like is set at 1000Angstrom or higher; a substrate whose cost is comparatively low and whose average roughness in the center line is 0.1 to 1.0mum is utilized fully in order to sharply lower costs of a capacitor. That is to say, an internal electrode layer 2, composed of aluminum, having a film thickness of 3000Angstrom is formed, as a first layer of an internal electrode, on an alumina ceramic substrate 1; then, a dielectric layer 3, composed of strontium titanate, having a film thickness of 5000Angstrom is formed by using a sputtering method. In succession, an internal electrode layer, composed of aluminum, having a film thickness of 5000Angstrom is formed as a second layer of the internal electrode.
    • 7. 发明专利
    • METALLIZED FILM CAPACITOR
    • JPH09199371A
    • 1997-07-31
    • JP458196
    • 1996-01-16
    • MATSUSHITA ELECTRIC IND CO LTD
    • TAKAHASHI NAOKIKINUTA YUKIOTERADA TERUHISA
    • H01G4/18H01G4/015
    • PROBLEM TO BE SOLVED: To provide a smaller-sized capacitor with a security function which is hard to increase a capacitance reduction in a high temperature life test, and which has stable excellent safety operations. SOLUTION: A metal vapor-deposited electrode 3 is formed on one face or both faces of a dielectric 2, a plurality of split electrodes 1 are formed in longitudinal and width directions of the electrode part, the split electrodes are partitioned at P margine 4, a margin fuse 5 having a fuse function is provided in a certain pant or a plurality of positions, and when these films are wound or stacked, the margin fuse 5 is overlapped on a P margin 6 of a counter electrode of a layer above or below that. Further, with the arrangement that the P margin part on one side is overlapped on that on the reverse side, or a vertical margin 9 is overlapped on the margin fuse and P margin 4 on the reverse face, it is possible to obtain performance which is hard to increase a capacitance reduction even in a higher temperature life test as compared with a conventional film capacitor with security function, and which has stable excellent safety operations.
    • 8. 发明专利
    • MANUFACTURE OF CAPACITOR
    • JPH05152177A
    • 1993-06-18
    • JP31573891
    • 1991-11-29
    • MATSUSHITA ELECTRIC IND CO LTDJAPAN CARLIT CO LTD
    • TAKEMOTO KOJIKINUTA YUKIOTERANISHI KAZUYOHASHIZUME KENICHIYAMAMOTO HIDEOISA ISAO
    • H01G4/14H01G4/18H01G13/00
    • PURPOSE:To provide a method for manufacture of a small-sized, large-capacity, non- polar capacitor having small leakage current and high breakdown strength, excellent in high-frequency characteristic which meets the needs for electronic circuits of high density which can be automatically inserted to cope with the reduction of size and weight of electric and electronic equipment and the introduction of large-scale integrated circuits thereto. CONSTITUTION:A poor solvent of polyamic acid is added to a solution containing polyamicrate to obtain an electrodeposition liquid. Electrodeposition is performed or the surface of a porous conductor using this electrodeposition liquid. After the formation of a polyamic acid thin film through electrodeposition, it is heated and dehydrated to form a polyimide film on the surface of the conductor. Further, a polypyrrole film is formed on the surface of this polyimide film through chemical oxidative polymerization; subsequently, another polypyrrole film is formed thereon through electrolytic polymerization to form a conductor layer whose polarity is opposite to that of the polyimide film. This gives a small-sized, large-capacity, non-polar capacitor excellent in high-frequency characteristic. In addition, an ultrasonic wave is irradiated during the electrodeposition process above mentioned, giving a capacitor of a smaller leakage current and higher breakdown strength.