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    • 1. 发明专利
    • Semiconductor device having high permittivity insulating film
    • 具有高容许绝缘膜的半导体器件
    • JP2008078675A
    • 2008-04-03
    • JP2007271175
    • 2007-10-18
    • Matsushita Electric Ind Co Ltd松下電器産業株式会社
    • HARADA YOSHIHISA
    • H01L21/318H01L29/78H01L21/283H01L21/314H01L21/316H01L29/423H01L29/49
    • PROBLEM TO BE SOLVED: To enable a thin equivalent oxide thickness (EOT) and flat surface gate insulation film, in a semiconductor having a high permittivity insulating film (High-K).
      SOLUTION: When there are diffusion prevention films on both the upper and lower interfaces of a High-K film, a physical film thickness must be in a range of 2.4 nm or larger and 5.0 nm or smaller. When there is a diffusion preventing film on either the upper or the lower interface, the physical film thickness must be in a range of 2.8 nm or larger and 5.0 nm or smaller. When there is no diffusion preventing film on either the upper or the lower interface, the physical film thickness must be in a range of 3.2 nm or larger and 5.0 nm or smaller. When a silicon nitride film as the diffusion preventing film exists on the interface of the High-K film and silicon substrate and the diffusion preventing film containing nitrogen exists on the interface of the High-K film and electrode, an ideally stable EOT and small leakage current characteristics can be achieved, by using EOT of 0.7 nm or larger.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:在具有高介电常数绝缘膜(High-K)的半导体中,能够实现薄当量氧化物厚度(EOT)和平面栅极绝缘膜。 解决方案:当在高K膜的上界面和下界面上都存在扩散防止膜时,物理膜厚度必须在2.4nm以上且5.0nm以下的范围内。 当在上界面或下界面上存在防扩散膜时,物理膜厚度必须在2.8nm以上且5.0nm以下的范围内。 在上界面或下界面上不存在扩散防止膜时,物理膜厚度必须在3.2nm以上且5.0nm以下的范围内。 当在High-K膜和硅衬底的界面上存在作为扩散防止膜的氮化硅膜,并且在High-K膜和电极的界面上存在含有氮的扩散防止膜时,理想的稳定的EOT和小的漏电 通过使用0.7nm以上的EOT可以实现电流特性。 版权所有(C)2008,JPO&INPIT
    • 3. 发明专利
    • VACUUM PART WITH INTRODUCING TERMINAL
    • JPH09327621A
    • 1997-12-22
    • JP15061296
    • 1996-06-12
    • MATSUSHITA ELECTRIC IND CO LTD
    • IDOTA TAKESHINIWA MASAAKIONISHI TERUTOHARADA YOSHIHISA
    • B01J3/00
    • PROBLEM TO BE SOLVED: To provide a vacuum part capable of reducing vacuum leakage in a shirt time without repairing it with releasing to an ambient air even if amount of vacuum leakage becomes great due to external mechanical stresses and the like, in a vacuum part with an introducing terminal used in a variety of vacuum apparatus. SOLUTION: A vacuum chamber 3 having a vacuum discharge port in a face opposite to a knife edge face of a flange 2 is provided, and an electrode 1 for introducing current penetrates the flange 2 and a wall of the vacuum chamber 3, and the flange 2 and the vacuum chamber 3 are insulated from the electrode 1 by insulating members 5, 6. The electrode 1, the flange 2 and the vacuum chamber 3 are sealed by sealing metals 7-10 to form a vacuum part with an introducing terminal. With the vacuum part with the introducing terminal being mounted on a vacuum vessel, a vacuum exhaust port 4 is connected to a vacuum pump to evacuate the vacuum chamber 3 and vacuum leakage from sealing portion of the flange 2 and the electrode 1 into the vacuum vessel in a vicinity of the sealing metal 8 can be reduced.
    • 4. 发明专利
    • FORMATION OF INTERFACE
    • JPH09283442A
    • 1997-10-31
    • JP9234296
    • 1996-04-15
    • MATSUSHITA ELECTRIC IND CO LTD
    • NIWA MASAAKIHARADA YOSHIHISAONISHI TERUTOIDOTA TAKESHI
    • H01L21/20H01L21/02H01L27/12
    • PROBLEM TO BE SOLVED: To smooth the interface between a silicon layer and a buried oxide film layer of a silicon-on-insulator(SOI). SOLUTION: A direct current is applied to electrical heating electrode regions 17, 18 so as to perform heating. Migration of surface atoms may be controlled during electrical heating, and the surface atoms migrate in a direction of the flowing current. In the case of an SOI substrate, sublimation of SiO occurs along with migration of silicon atoms on the surface at the time of electrical heating. However, since silicon is formed on both sides of the interface of a buried oxide film, electrical heating does not cause sublimation of SiO but causes interface atoms to migrate in the direction of the current. Since the majority of electrical heating current components flow through the substrate surface portion, the electrical heating current flows to an upper layer silicon. Therefore, migration of interface atoms in the current direction due to electrical heating occurs on the buried oxide film interface as well as the surface of the upper layer silicon. Thus, the silicon-buried oxide film interface is smoothed, realizing smoothing of the interface at the atomic level.
    • 5. 发明专利
    • VIDEO TEX TERMINAL EQUIPMENT
    • JPS62159993A
    • 1987-07-15
    • JP173286
    • 1986-01-08
    • MATSUSHITA ELECTRIC IND CO LTD
    • HARADA YOSHIHISA
    • H04N7/08H04L13/00H04L29/12H04N7/081
    • PURPOSE:To select a display memory displayed on a screen and to selectively display not only a picture previously received but also a latest picture through the prescribe operation by sequentially switching the display memories storing the latest picture information and insuring the contents in other display memories against being modified. CONSTITUTION:Data received by a MODEM 1 is translated by a data processing part 2 and written in the 1st display memory 31 by a display memory write switch 4. Then the contents in the 1st display memory 31 are displayed on a display part 7 through a display memory read switch 5. Whenever a new picture is received, it is sequantially stored in the 2nd display memory 32, the 3rd display memory 33, the 1st display memory 31.... Accordingly the titled equipment stores two pictures, that is, the latest one and the previous one, in the display memories. If pictures other than the latest one are displayed, a picture selection switch 6 is operated to select the display memory read switch 5, whereby any one of pictures stored in the display memories 31-33 is displayed. By instantaneously switching the previously received picture, it can be displayed on the display part 7.
    • 6. 发明专利
    • ON-LINE TERMINAL EQUIPMENT
    • JPS62159934A
    • 1987-07-15
    • JP173186
    • 1986-01-08
    • MATSUSHITA ELECTRIC IND CO LTD
    • HARADA YOSHIHISA
    • H04L9/00G06F21/20H04L9/32
    • PURPOSE:To prevent illegal utilization by allowing a terminal equipment to apply registration/discrimination of a pass word in a VIDEOTEX system or the like. CONSTITUTION:The titled equipment is provided with a nonvolatile memory 1 storing a pass word, a keyboard 2 used for the setting/registration of the pass word, a switch 3 operated at the setting of the pass word and a microcomputer 4 controlling the nonvolatile memory 1, the keyboard 2 and the switch 3. In discriminating the pass word, the data inputted from the keyboard 2 and the pass word registered in the nonvolatile memory 1 are compared. When they are coincident, the succeeding operation of the terminal equipment is permitted and when dissident, the data is inputted again from the keyboard 2. In registering the pass word, the switch 3 allowed for the operation by the specific user only is turned on and the data inputted from the keyboard 2 is stored in the nonvolatile memory as the pass word. Thus, the pass word is changed by the specific user easily, then the piracy of the pass word is coped with by changing the pass word periodically. The processing above is executed easily without imposing a load onto the center.
    • 7. 发明专利
    • USER'S TERMINAL DEVICE
    • JPS61166287A
    • 1986-07-26
    • JP672885
    • 1985-01-17
    • MATSUSHITA ELECTRIC IND CO LTD
    • SHIOYAMA KENJIHARADA YOSHIHISA
    • G06F3/048G06F3/14G06F13/00H04N7/173
    • PURPOSE:To select the propriety of display at the user's terminal device side by discriminating a request signal at a pattern discrimination processing circuit when a picture information number is subjected to request input by a remote control key pad and inputting a negative signal to a switch circuit when the request number is discriminated to be a specific picture information number. CONSTITUTION:In requesting the display on picture plane of character and graphic information to a television receiver 6 by using a user's terminal device, a picture information number is keyed in a remote control key pad 5 and received by a remote control reception section 4. A request signal B outputted from a reception display processing section 2 is inputted to a picture plane discrimination processing circuit 9, the request number is discriminated and when it is coincident with a specific picture information number, a display negative signal A is outputted from a picture plane discrimination processing circuit 7 to the switch circuit 9. Then the circuit 9 does not output the display signal of the specific picture information to the television receiver 6 but outputs the picture information stored in an auxiliary memory 8 as a display signal and the content of the memory 8 is displayed on the television receiver 6 as the character and graphic information picture plane.