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1. 发明专利

JPS5778039A Diazo copying material and its copying sistem 失效
标题翻译： DIAZO复制材料及其复制系统
公开(公告)号：JPS5778039A
公开(公告)日：1982-05-15
申请号：JP15438280
申请日：1980-10-31
申请人： Kanegafuchi Chem Ind Co Ltd , Nippon Kankoushi Kogyo Kk
发明人： NOMURA KAZUTOSHI , IMAI SATOSHI , YAMAGUCHI YOSHINORI , MINATO SHIYOUICHI
IPC分类号： G03C1/76 , B41M5/382 , G03C1/60 , G03C5/18
CPC分类号： G03C1/60
摘要： PURPOSE:To preent penetration of a coupler gas through a paper layer and to develop color efficiently, by combining a diazo copying material composed of a barrier layer, precoat layer, and a diazo layer, with a photosensitive paper coated with a diazo compound and a compound capable of coupling. CONSTITUTION:A diazo copying material using a sublimed coupler gas color development system is obtained by forming a barrier layer coatd with case in or the like in 1-5g/m amount, a precoat layer containing a pigment, such as SiO2 or TiO2, and a resin, and a dizo layer consisting mainly of a diazo compound, such as p- diazo-2,5-dimethoxybenzoyl aniline.1/2ZnCl2. This copying material is combined with a photosensitive paper made by coating, a compound capable of coupling with a diazo compound on a transparent or trancelucent support, thus permitting this copying material to serve as a light and heat sensitive copying material.
摘要翻译：目的：为了通过纸层渗透成色剂气体并有效地显色，通过将由阻挡层，预涂层和重氮层组成的重氮复制材料与涂有重氮化合物的感光纸和能耦合的化合物。构成：使用升华成色剂气体显色系统的重氮复印材料通过以1-5g / m 2的量形成具有等于或等于其中的壳体的阻挡层来获得，包含颜料的预涂层，例如SiO 2或 TiO 2和树脂，以及主要由重氮化合物如对 - 重氮-2,5-二甲氧基苯甲酰基苯胺.1 / 2ZnCl 2组成的二唑层。该复印材料与通过涂布制成的感光纸，能够与重氮化合物偶联在一种透明或透明的载体上的化合物组合，从而允许该复印材料用作光敏感材料。

2. 发明专利

JPS5779941A Method and device for copying 失效
标题翻译：用于复制的方法和装置
公开(公告)号：JPS5779941A
公开(公告)日：1982-05-19
申请号：JP15629480
申请日：1980-11-05
申请人： Kanegafuchi Chem Ind Co Ltd , Nippon Kankoushi Kogyo Kk
发明人： NOMURA KAZUTOSHI , IMAI SATOSHI , YAMAGUCHI YOSHINORI , MINATO SHIYOUICHI
IPC分类号： G03B27/02 , G03C5/10 , G03C5/56
CPC分类号： G03C5/10
摘要： PURPOSE:To make both copying by reflection printing and transmission printing possible in accordance with originals with one unit of copying device by using reflection printing photosensitive paper and transmission printing photosensitive paper coated with photosensitive chemicals in a pair, using one of these for latent image formation and the other for developing and performing developing by means of heating. CONSTITUTION:One photosensitive paper A contains phenols or naphthols as a photosensitive material and is used for reflection printing, and a photosensitive material contg. an acid stabilizer and a coloring assistant in diazonium salt is used for transmission printing photosensitive paper B. The paper A is superposed on an original and white light is irradiated from the paper A side to produce a latent image on the paper A. The phenols of the exposed parts are oxidized and lose the coupling power to dianonium salt. Next, the chemical coated surface of the paper B and the chemical coated surface of the paper A are superposed and passed through hot rolls. The remaining phenols on the paper A migrate to the paper B and react with the diazonium salt thereof, thereby forming a colored image on the paper B. The remaining diazonium salt on the paper B is decomposed by UV irradiation. Conversely, it is also possible to form the image on the paper B by using the paper B for transmission printing, superposing the origimal thereon, and subjecting the same to UV exposure then superposing the paper A followed by heating.
摘要翻译：目的：通过使用反射印刷感光纸和感光性化学品涂布的传输印刷感光纸，通过使用一个复印设备的原稿，可以通过反射打印和传输打印进行复印，使用其中一种用于潜像形成另一个用于通过加热来开发和执行开发。构成：一张感光纸A含有苯酚或萘酚作为感光材料，用于反射印刷，光敏材料包括重氮盐中的酸稳定剂和着色助剂用于透印印刷感光纸B.纸A叠加在原纸上，从纸A侧照射白光，在纸A上产生潜像。酚类暴露的部分被氧化并失去与二铵盐的偶联力。接下来，将纸B的化学被覆表面和纸A的化学涂覆表面叠加并通过热辊。纸A上剩余的酚移动到纸B上并与其重氮盐反应，从而在纸B上形成着色图像。纸B上剩余的重氮盐通过UV照射分解。相反地，也可以通过使用用于传送打印的纸张B叠加纸张B上的图像，并且对其进行紫外线曝光，然后叠加纸张A然后加热，从而在纸张B上形成图像。

3. 发明专利

JPS5721424A Production of polyvinyl chloride type composite material 失效
标题翻译：聚氯乙烯型复合材料的生产
公开(公告)号：JPS5721424A
公开(公告)日：1982-02-04
申请号：JP9548280
申请日：1980-07-11
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： OOWADA YOSHIHISA , SHIODA MINORU , YAMAGUCHI YOSHINORI , MATSUMOTO KENJI , SAITOU KAZUO
IPC分类号： B29B11/00 , B29C57/00 , B29C70/06 , C08J3/20 , C08J5/04 , C08K3/00 , C08K3/18 , C08L1/00 , C08L23/00 , C08L27/00 , C08L33/00 , C08L33/02 , C08L67/00 , C08L101/00
摘要： PURPOSE: To obtain titled impact-resistant composite material in good operability, by mixing an inorganic filler with an aqueous polyvinyl chloride type resin slurry premixed with a high-molecular coagulant, and dewatering and drying the slurry.
CONSTITUTION: The polyvinyl chloride type composite material is prepared by mixing a nonionic, anionic or cationic high-molecular coagulant, e.g., polyacrylamide or polyvinyl chloride, in an amount of about 0.05W0.5pt.wt. per 100pts.wt. inoragnic filler below-mentioned, to an aqueous slurry of a polyvinyl chloride type resin such as a vinyl chloride homopolymer or a copolymer of vinyl chloride with a monomer such as an organic acid vinyl ester or vinylidene chloride, adding to the mixture an inorganic filler such as mica, talc or glass flake, in such an amount that the composite material produced contains 1W60% filler, and mixing, dewatering and drying the resulting mixture.
COPYRIGHT: (C)1982,JPO&Japio
摘要翻译：目的：通过将无机填料与高分子凝结剂预混合的聚氯乙烯型树脂浆料混合，并对浆料进行脱水和干燥，获得具有良好可操作性的标题抗冲击复合材料。构成：聚氯乙烯类复合材料通过以约0.05-0.5pt.wt的量混合非离子，阴离子或阳离子高分子凝结剂，例如聚丙烯酰胺或聚氯乙烯来制备。每100pts.wt 下述的惰性填料，涉及聚氯乙烯类树脂如氯乙烯均聚物或氯乙烯与单体如有机酸乙烯酯或偏二氯乙烯的共聚物的水性浆液，向混合物中加入无机填料如作为云母，滑石或玻璃鳞片，其量使得所制备的复合材料含有1-60％的填料，并混合，脱水和干燥所得混合物。

4. 发明专利

JPS59181357A Photoconductive material 失效
标题翻译：光电材料
公开(公告)号：JPS59181357A
公开(公告)日：1984-10-15
申请号：JP5744783
申请日：1983-03-31
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： SHIMIZU ISAMU , YAMAGUCHI YOSHINORI
IPC分类号： G03G5/043 , G03G5/08 , H01L31/0248 , H01L31/08
CPC分类号： G03G5/08 , G03G5/0433
摘要： PURPOSE: To obtain a photoconductive material having high sensitivity in a wide wavelength region by alternately laminating five or more layers in total of the 1st layers contg. a specified VIb group chalcogen element as the principal component and the 2nd layers contg. a specified IIb group element and forming a pontential barrier between the 1st and the 2nd layers.
CONSTITUTION: A photoconductive material having a laminated structure is obtd. by alternately laminating five or more layers in total of the 1st layers contg. one or more VIb group chalcogen elements in the periodic table selected among S, Se and Te and the 2nd layers contg. a IIb group element selected among Zn Cd and Hg by vapor deposition or other method. The thickness of each of the 1st and the 2nd layers is 2W1,000Å. A potential barrier of ZnS, CdSe, Cd.Se.Te or the like is formed between the 1st and the 2nd layers to provide rectifying action and to reduce dark current. When light is irradiated, the electric conductivity is improved, and high sensitivity is attaind in a range from light of a shorter wavelength to light of a longer wavelength.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过交替层叠五层或更多层总共第一层的厚度来获得在宽波长区域具有高灵敏度的光电导材料。指定的VIb组硫族元素作为主要成分，第二层约束。一个指定的IIb组元素，并在第一层和第二层之间形成一个势垒。构成：具有层叠结构的感光材料。通过交替层叠五层或更多层，总共第一层。在S，Se和Te中选择的周期表中的一个或多个VIb族硫族元素元素和第二层约束。通过气相沉积或其他方法从Zn Cd和Hg中选出的IIb族元素。第1层和第2层的厚度为2-1,000埃。在第1层和第2层之间形成ZnS，CdSe，CdSeTe等的势垒，以提供整流作用并减少暗电流。当照射光时，电导率提高，并且在从较短波长的光到较长波长的光的范围内可以获得高灵敏度。

5. 发明专利

JPS6126268A Heat-resistant amorphous silicon solar cell and manufacture thereof 失效
标题翻译：耐高温非晶硅太阳能电池及其制造
公开(公告)号：JPS6126268A
公开(公告)日：1986-02-05
申请号：JP14841184
申请日：1984-07-16
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： OWADA YOSHIHISA , TAKADA JUN , YAMAGUCHI YOSHINORI
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/075
CPC分类号： H01L31/075 , H01L31/022425 , Y02E10/548
摘要： PURPOSE:To prevent the decrease in characteristic due to the diffusion of the back electrode into the semiconductor by a method wherein a Cr layer of suitable thickness is provided between the semiconductor and the back electrode. CONSTITUTION:A Cr layer having a thickness of 10-1,000Angstrom preferably 30- 300Angstrom is provided between the semiconductor and the back electrode. The thickness of this Cr layer of less than 10Angstrom can not yield layers of uniform and good quality or can not sufficiently prevent the thermal diffusion of the metal forming the back electrode into the semiconductor. Besides, the layer thickness in excess of 1,000Angstrom increases the series electric resistance in the presence of this layer, decreases the light reflectance, and gives a lot of time in formation of Cr layers. The solar cell thus manufactured can be properly used in the case of use at a high temperature of e.g. 50 deg.C or more.
摘要翻译：目的：通过在半导体和背面电极之间设置适当厚度的Cr层的方法，防止由于背面电极向半导体的扩散而引起的特性的降低。构成：在半导体和背面电极之间设置厚度为10-1000埃，优选30-300埃的Cr层。小于10A的Cr层的厚度不能产生均匀且质量好的层，或者不能充分防止形成背电极的金属的热扩散进入半导体。此外，超过1000A的层厚度在存在该层的情况下增加了串联电阻，降低了光反射率，并且在形成Cr层时产生了大量的时间。如此制造的太阳能电池可以在例如高温下使用的情况下适当地使用。 50℃以上。

6. 发明专利

JPS6191974A Heat resisting multijunction type semiconductor element 失效
标题翻译：耐热多功能型半导体元件
公开(公告)号：JPS6191974A
公开(公告)日：1986-05-10
申请号：JP21394484
申请日：1984-10-11
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： TAKADA JUN , YAMAGUCHI YOSHINORI , OWADA YOSHIHISA
IPC分类号： H01L31/04 , H01L25/07 , H01L29/868 , H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L25/074 , H01L29/868 , H01L31/202 , H01L2224/32145 , H01L2924/0002 , Y02E10/548 , Y02P70/521 , H01L2924/00
摘要： PURPOSE: To prevent a semiconductor element from deteriorating in performance by a method wherein 3 and 5 valence dopant atomic diffusion blocking layers are provided between p- and n- layers to block the mutual diffusion between the p- and n-layers.
CONSTITUTION: Amorphous p-layers, i-layers and n-layers are formed by means of conventional process on a transparent substrate 1 with a transparent electrode 2 to form diffusion blocking layers with specified thickness by means of conventional electronic beam evaporating process using chrome etc. At this time, repeat this process as often as necessary to form multijunctions for continuous evaporation of a backside electrode atomic diffusion block layer 4 and a backside electrode 5 with specified thickness. Finally the block layer 4 and the a-Si:H semiconductor layer 5 may be heat-treated at normal temperature of 150∼400°C for 0.2∼5hr for interfacial reaction to bring them into better contact.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了防止半导体元件的性能恶化，其中在p层和n层之间设置3价和5价的掺杂剂原子扩散阻挡层以阻挡p层和n层之间的相互扩散。构成：通过常规工艺在具有透明电极2的透明基板1上形成无定形p层，i层和n层，以通过使用铬等的常规电子束蒸发工艺形成具有特定厚度的扩散阻挡层此时，根据需要经常重复该过程，以形成用于连续蒸发背面电极原子扩散阻挡层4和具有规定厚度的背面电极5的多连接。最后，可以在150-400℃的常温下对块层4和a-Si：H半导体层5进行热处理0.2-5小时，以进行界面反应以使它们更好地接触。

7. 发明专利

JPS6191973A Heat resisting thin film photoelectric conversion element and manufacture thereof 失效
标题翻译：耐热薄膜光电转换元件及其制造
公开(公告)号：JPS6191973A
公开(公告)日：1986-05-10
申请号：JP21394384
申请日：1984-10-11
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： TAKADA JUN , YAMAGUCHI YOSHINORI , OWADA YOSHIHISA
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/075 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022425 , Y02E10/52 , Y02E10/548
摘要： PURPOSE:To improve the heat resisting thin film photoelectric conversion element characteristics by a method wherein a silicon layer (Cr-Si layer) 5-1,000Angstrom thick containing 1-90atom% of chrome is provided between a semiconductor and a backside electrode. CONSTITUTION:An amorphous p layer, an i layer and an n layer are formed on a transparent substrate with a transparent electrode. Then a layer with specified thickness is formed of chrome silicide. The composition of chrome silicide may be properly selected conforming to the composition of Cr-Si layer. Later, a heat resisting thin film photoelectric conversion element may be produced by means of depositing a backside electrode ulilizing conventional process. Moreover when the element is processed at the filming temperature of 180 deg.C (around 180-400 deg.C) for 0.5-4hr, the contact between semiconductor layer/Cr-Si layer/backside electrode may be improved to reduce the series resistance on the interface thereof.
摘要翻译：目的：通过在半导体和背面电极之间设置含有1-90原子％铬的5-1000埃的硅层（Cr-Si层）来提高耐热薄膜光电转换元件的特性。构成：在具有透明电极的透明基板上形成非晶p层，i层和n层。然后由铬硅化物形成具有规定厚度的层。可以根据Cr-Si层的组成适当选择硅化铬的组成。之后，可以通过沉积背面电极消毒常规方法来制造耐热薄膜光电转换元件。此外，当元件在180℃（约180-400℃）的成膜温度下加工0.5-4小时时，可以改善半导体层/ Cr-Si层/背面电极之间的接触以降低串联电阻在其界面上。

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