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    • 4. 发明专利
    • Photoconductive laminate structure
    • 光电陶瓷结构
    • JPS61138258A
    • 1986-06-25
    • JP25935384
    • 1984-12-10
    • Canon Inc
    • TAKEI TETSUYA
    • G03G5/14G03G5/043G03G5/082G03G5/147
    • G03G5/0433G03G5/08221
    • PURPOSE:To obtain a photoconductive member stabilized in spectral sensitivity by forming an interlayer between the surface layer of the photoconductive laminated structure and the photoconductive layer and reducing or eliminating reflection from each interface between the interlayer and the surface layer, and the interlayer and the photoconductive layer. CONSTITUTION:The photoconductive laminate structure is prepared by laminating on an aluminum substrate 3 the photoconductive layer 2 made of amorphous Si, amorphous Se, or the like, the interlayer 4 made of amorphous Si, and further, an amorphous silicon carbide transparent layer as a protective layer 1. The reflectances of both interfaces are represented by formulae I, where the refractive indices of the layers 1, 4, 2 are n1, n2, n3, respectively, and n1 , the more both values approximate. At that time, equation II applies, where the thickness of the interlayer is (a), the wavelength of incident light is lambda, and m is an integer of >=0, the material and the thickness are selected so as to satisfy said equation, thus permitting the reflection of both interfaces to be weakened, and stable spectral sensitivity to be obtained.
    • 目的:通过在光电导层叠结构的表面层和光电导层之间形成中间层,减少或消除中间层与表面层之间的界面反射,获得光谱灵敏度稳定的感光体,以及中间层和光电导 层。 构成:通过在铝基板3上层叠由非晶Si,非晶Se等构成的光电导层2,由非晶Si构成的中间层4,并且将非晶碳化硅透明层作为 两个界面的反射率由式I表示,其中层1,4,2的折射率分别为n1,n2,n3,并且n1 ,这两个值越接近。 此时,应用等式II,其中中间层的厚度为(a),入射光的波长为λ,m为> 0的整数,材料和厚度被选择为满足所述等式 ,从而允许两个界面的反射减弱,并且获得稳定的光谱灵敏度。
    • 5. 发明专利
    • Electrophotographic sensitive body
    • 电子感应敏感体
    • JPS6136754A
    • 1986-02-21
    • JP15726484
    • 1984-07-30
    • Ricoh Co Ltd
    • HASHIMOTO JUNICHIROTAMURA HIROSHIAKEYOSHI HIDEKI
    • G03G5/04G03G5/043G03G5/047G03G5/05
    • G03G5/0507G03G5/0433G03G5/047
    • PURPOSE:To obtain a electrophotographic sensitive body low in residual potential and superior in durability or the like without considering a combination between an electrostatic charge transfer material and a binder by incorporating a specified metal compd. in a charge transfer layer and forming a laminate type photosensitive layer composed of the charge transfer layer and a charge generating layer. CONSTITUTION:The charge transfer layer contg. at least one kind of oxide or chloride of a metal, such as Fe, Ni, Cu, Cr, Sn, In, Ag, or the like together with a charge transfer layer is formed in combination with the charge generating layer on a conductive substrate. The charge generating layer is formed on the conductive substrate by vapor depositing the charge generating material, such as Se, Se alloy, amorphous Si, or org. pigment, or incorporating it in the binder and coating the substrate with the binder contg. it. The charge transfer layer is formed on the charge generating layer. The addition of the metal compd. makes it unnecessary to consider the conventional problems that the residual potential depends on the combination between the charge transfer material and the binder, and repeating the use increases residual potential, thus permitting the photosensitive body to be extended in life.
    • 目的:通过结合特定的金属组合物,不考虑静电电荷转移材料和粘合剂之间的组合,获得低残留电位和耐久性等优异的电子照相感光体。 在电荷转移层中形成由电荷转移层和电荷产生层组成的叠层型感光层。 构成:电荷转移层 与导电性基板上的电荷产生层组合形成与电荷转移层一起的金属的氧化物或氯化物,例如Fe,Ni,Cu,Cr,Sn,In,Ag等, 。 电荷产生层通过气相沉积诸如Se,Se合金,非晶Si或组织的电荷产生材料形成在导电基底上。 颜料,或将其并入粘合剂中,并用粘合剂包覆基材。 它。 电荷转移层形成在电荷产生层上。 添加金属compd。 不需要考虑常规的问题,即残留电位取决于电荷转移材料和粘合剂之间的组合,并且重复使用会增加残留电位,从而允许感光体的寿命延长。
    • 6. 发明专利
    • Photoconductive member
    • 光电会员
    • JPS59185343A
    • 1984-10-20
    • JP6132483
    • 1983-04-06
    • Toshiba Corp
    • KAGA HIDEKAZUYAMAZAKI MUTSUKI
    • G03G5/08G03G5/043H01L31/0248
    • G03G5/0433
    • PURPOSE:To provide high potential retentivity and to prevent residual potential from being produced by successively forming the 1st blocking layer of amorphous silicon having a specified specific resistance value or below and the 2nd blocking layer of amorphous silicon having a specified specific resistance value or above between a support and a photoconductive layer of amorphous silicon. CONSTITUTION:The 1st blocking layer 2 of amorphous silicon (a-Si) having OMEGAcm specific resistance and the 2nd blocking layer 3 of a-Si having >=10 OMEGAcm specific resistance are successively formed on an electrically conductive support 1. A photoconductive layer 4 of a-Si contg. a IIIA group atom such as B is formed on the layer 3. A surface coating layer 5 may be formed on the layer 4 to stabilize the surface of the layer 4. It is preferable that each of the layers 2, 3, 4 is an a-Si layer contg. at least one between H and halogen, and the specific resistance is regulated by adding a small amount of B, P or the like. The layer 5 is an Si layer contg. O, N or H. Thus, a photosensitive a-Si body producing no residual potential and having high sensitivity and a long life is obtd.
    • 目的:为了提供高电位的保持性,并且通过连续地形成具有规定的电阻率值以下的非晶硅的第1阻挡层和具有规定的电阻率以上的非晶硅的第2阻挡层,具有规定的比电阻值以上的非晶硅的第2阻挡层, 非晶硅的载体和光电导层。 构成:具有<= 10 9欧米高比电阻率的非晶硅(a-Si)的第一阻挡层2和具有> = 10 9欧姆欧姆比特电阻的a-Si的第二阻挡层3依次形成在 导电支撑件1. a-Si的光电导层4 在层3上形成诸如B的IIIA族原子。可以在层4上形成表面涂层5以使层4的表面稳定。优选地,层2,3,4中的每一个为 a-Si层限制 H和卤素之间的至少一个,并且通过加入少量的B,P等来调节电阻率。 层5是Si层。 O,N或H.因此,不产生残留电位并且具有高灵敏度和长寿命的光敏a-Si体。
    • 7. 发明专利
    • Photoconductive material
    • 光电材料
    • JPS59181357A
    • 1984-10-15
    • JP5744783
    • 1983-03-31
    • Kanegafuchi Chem Ind Co Ltd
    • SHIMIZU ISAMUYAMAGUCHI YOSHINORI
    • G03G5/043G03G5/08H01L31/0248H01L31/08
    • G03G5/08G03G5/0433
    • PURPOSE: To obtain a photoconductive material having high sensitivity in a wide wavelength region by alternately laminating five or more layers in total of the 1st layers contg. a specified VIb group chalcogen element as the principal component and the 2nd layers contg. a specified IIb group element and forming a pontential barrier between the 1st and the 2nd layers.
      CONSTITUTION: A photoconductive material having a laminated structure is obtd. by alternately laminating five or more layers in total of the 1st layers contg. one or more VIb group chalcogen elements in the periodic table selected among S, Se and Te and the 2nd layers contg. a IIb group element selected among Zn Cd and Hg by vapor deposition or other method. The thickness of each of the 1st and the 2nd layers is 2W1,000Å. A potential barrier of ZnS, CdSe, Cd.Se.Te or the like is formed between the 1st and the 2nd layers to provide rectifying action and to reduce dark current. When light is irradiated, the electric conductivity is improved, and high sensitivity is attaind in a range from light of a shorter wavelength to light of a longer wavelength.
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:通过交替层叠五层或更多层总共第一层的厚度来获得在宽波长区域具有高灵敏度的光电导材料。 指定的VIb组硫族元素作为主要成分,第二层约束。 一个指定的IIb组元素,并在第一层和第二层之间形成一个势垒。 构成:具有层叠结构的感光材料。 通过交替层叠五层或更多层,总共第一层。 在S,Se和Te中选择的周期表中的一个或多个VIb族硫族元素元素和第二层约束。 通过气相沉积或其他方法从Zn Cd和Hg中选出的IIb族元素。 第1层和第2层的厚度为2-1,000埃。 在第1层和第2层之间形成ZnS,CdSe,CdSeTe等的势垒,以提供整流作用并减少暗电流。 当照射光时,电导率提高,并且在从较短波长的光到较长波长的光的范围内可以获得高灵敏度。
    • 8. 发明专利
    • Electrophotographic receptor
    • 电子摄影受体
    • JPS5974563A
    • 1984-04-27
    • JP18384782
    • 1982-10-20
    • Olympus Optical Co Ltd
    • MIMURA YOSHIYUKIOKADA TAKAOTODA AKITOSHI
    • G03G5/02C23C14/06G03G5/043G03G5/08G03G5/10G03G5/14
    • C23C14/0605G03G5/0433G03G5/102G03G5/104G03G5/14
    • PURPOSE: To obtain an image having high contrast and high density, and to obtain a good image even in high humidity, by forming a conductive layer made of Te on a substrate, and forming an Se type photoconductive layer and an insulating layer on this conductive layer in succession.
      CONSTITUTION: The conductive layer 2 is formed on a conductive substrate made of aluminum or the like or a substrate 1 of a polyester film or the likeby thinly vapor depositing Te. A photoconductive layer 3 made of Se or contg. Se as a main component, and also Te or As is formed on the layer 2, and then, an insulating layer 4 of a polyester film or the like is formed on the layer 3. When the layer 3 is substituted for a 2-layer type photoconductive layer 3' consisting of a charge transfer layer 3b of Se type doped with ≤4,000ppm halogen, and a charge generating layer 3a contg. 5W 25% Te, the composite layer 3' is made larger in spectral sensitivity region than the single Se layer 3, and enhanced in efficiency. When the layers 3, 3' are formed, it is preferable to heat temp. of the substrate to 55W65°C to carry out vapor deposition, and it is more desirable to heat treat it to 30W65°C after forming the layer 4. As a result, the Te layer 2 is enhanced in charge injection performance at the time of primary charging, and since it has blocking ability at the time of secondary charging, high contrast is obtained.
      COPYRIGHT: (C)1984,JPO&Japio
    • 目的:为了获得高对比度和高密度的图像,并且即使在高湿度下也能获得良好的图像,通过在基板上形成由Te构成的导电层,并且在该导电性层上形成Se型光电导层和绝缘层 层连续 构成:导电层2由铝等制成的导电性基板或聚酯膜等的基板1形成在薄的气相沉积Te上。 由Se制成的感光层3, Se作为主要成分,并且在层2上形成Te或As,然后在层3上形成聚酯膜等的绝缘层4.当层3代替2层 由掺杂有<= 4,000ppm卤素的Se型电荷转移层3b组成的光电导层3'和电荷产生层3a, 5- 25%Te,复合层3'的光谱灵敏度区域比单层Se层3大,效率提高。 当形成层3,3'时,优选加热温度。 的基底至55-65℃以进行气相沉积,更优选在形成层4之后将其热处理至30-65℃。结果,Te层2的电荷增加 在初次充电时的注入性能,并且由于其在二次充电时具有阻挡能力,因此获得高对比度。
    • 9. 发明专利
    • Electrophotographic receptor
    • 电子摄影受体
    • JPS5776550A
    • 1982-05-13
    • JP15279980
    • 1980-10-30
    • Canon Inc
    • KONDOU HIDEYO
    • G03G5/00G03G5/043G03G5/05G03G5/087
    • G03G5/087G03G5/0433
    • PURPOSE:To obtain a photoreceptor good in sensitivity and freed of a memory effect due to repeated charging, by laminating photoconductive layer consisting of a lower layer, a middle layer, and an upper layer each composed of cadmium sulfide calcined at a specified temperature, and a binder resin on a substrate. CONSTITUTION:An electrophotographic receptor has a photoconductive layer composed of cadmium sulfide and a binder resin, and consisting of a lower layer made of 100pts.wt. cadmium sulfide calcined at 480-530 deg.C and 1-15pts.wt. binder resin; a middle layer made of 100pts.wt. cadmium sulfide caleined at 400-450 deg.C and 7- 30pts.wt. binder resin; and an upper layer made of 100pts.wt. cadmium sulfide calcined at 460-490 deg.C and 10-25pts.wt. binder resin. An insulating layer made of an acrylic, epoxy, or the like resin is formed on the photoconductive layer when needed, and 10-40mu film thickness is preferable.
    • 目的:为了获得敏感性好的感光度,并且由于反复进行充电而不产生记忆效应,通过层压由特定温度下煅烧的硫化镉组成的下层,中间层和上层组成的光电导层,以及 在基材上的粘合剂树脂。 构成:电子照相受体具有由硫化镉和粘合剂树脂构成的光电导层,由100ps重量份的下层构成。 在480-530℃煅烧的硫化镉和1-15pts.wt。 粘合剂树脂; 一个由100pts.wt制成的中间层 硫化镉在400-450℃和7-30pts.wt。 粘合剂树脂; 和由100pts.wt。制成的上层。 在460-490℃煅烧的硫化镉和10-25pts.wt。 粘合剂树脂。 需要时,在光电导层上形成由丙烯酸,环氧等树脂构成的绝缘层,优选为10〜40μm的膜厚。
    • 10. 发明专利
    • Electrophotographic receptor
    • 空值
    • JPS5753753A
    • 1982-03-30
    • JP12838180
    • 1980-09-16
    • Shindengen Electric Mfg Co LtdYamanashi Denshi Kogyo Kk
    • SATO SEIJIWATANABE HISAOYOSHITOME MITSUHIRO
    • G03G5/08G03G5/043
    • G03G5/0433
    • PURPOSE:To reduce the residual potential of a selenium receptor by providing a 3- layered structure to the photoconductive layer of the receptor. CONSTITUTION:An electrophotographic receptor is manufactured by laying a charge transferring layer 2 made of high purity Se, a photoconductive layer 4 made of Se contg. a halogen element and a charge generating layer 3 made of Se alloy and having higher photosensitivity than the layer 2 on an electrically conductive substrate 1 in order. The thickness of the layer 4 is adjusted to >=0.01mum, and the maximum thickness is made equal to or smaller than the thickness of the layer 2. The preferred halogen element content of the layer 4 is 1-5,000ppm. In case of a 2- layered structure one interface exists between a high purity Se layer and an Se alloy layer. Although two interfaces exist in case of the 3-layered structure, contact potential is eliminated, and favorable discharging characteristics are shown.
    • 目的:通过向受体的光电导层提供3层结构来降低硒受体的残留电位。 构成:通过设置由高纯度Se制成的电荷转移层2,由Se附着的光电导层4制成电子照相受体。 由Se合金制成的卤素元素和电荷产生层3,并且在导电基片1上依次具有比层2更高的光敏性。 将层4的厚度调节至> =0.01μm,并使最大厚度等于或小于层2的厚度。层4的优选卤素元素含量为1-5,000ppm。 在2层结构的情况下,在高纯度Se层和Se合金层之间存在一个界面。 尽管在3层结构的情况下存在两个界面,但是消除了接触电位,并示出了良好的放电特性。