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1. 发明专利

JPS61116825A Formation of multiple electrode thin film 失效
标题翻译：形成多个电极薄膜
公开(公告)号：JPS61116825A
公开(公告)日：1986-06-04
申请号：JP23810884
申请日：1984-11-12
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： HAMAKAWA YOSHIHIRO , NISHIMURA KUNIO , NAKAYAMA TAKEHISA , TSUSHIMO KAZUNAGA , OWADA YOSHIHISA , HIRATA HISANORI , IZUMINA MASANOBU
IPC分类号： H01L31/04 , C23C16/50 , H01L21/20 , H01L21/205 , H01L21/31
CPC分类号： H01L21/0262 , H01L21/02532
摘要： PURPOSE:To form a substantially large size thin film on a substrate placed outside the discharge region through discharges at respective regions by providing at least three electrodes and supplying high frequency power to each electrode. CONSTITUTION:A substrate 4 is held 8 within a vacuum tank 7 with the thin film forming side placed downward, the electrodes 9a-9e are arranged with the interval for generating uniform plasma between them, a substrate 4 is heated 7 from the rear surface and a high frequency power is supplied 10. The power is supplied to each pair of electrodes 9a, 9c, 9e and electrode 9b, 9d to form uniform discharge between each electrode. Each electrode is perpendicular to paper surface and has predetermined length. The power supply apparatus 10 matches the power supplied from the high frequency power supply 11 with the load by capacitances 13a, 13b in the circuit 12 and supplies the power to two pairs through adjustment with capacitance 13c. Such floating type matching circuit forms symmetrical plasma between electrodes. With such structure, large size and uniform thin film can be formed without rotation of sample board.
摘要翻译：目的：通过提供至少三个电极并向每个电极提供高频功率，通过在各个区域放电，在放电区域外的衬底上形成基本上大的薄膜。构成：将基板4保持在真空槽7内，薄膜形成侧向下放置，电极9a-9e以其间隔产生均匀等离子体的间隔排列，基板4从后表面加热7，提供高频电力10.向每对电极9a，9c，9e和电极9b，9d提供电力，以在每个电极之间形成均匀的放电。每个电极垂直于纸面并具有预定的长度。电源装置10通过电路12中的电容13a，13b将来自高频电源11的电力与负载进行匹配，并通过电容13c的调整将电力供给两对。这种浮动型匹配电路在电极之间形成对称的等离子体。利用这种结构，可以在没有样品板的旋转的情况下形成大尺寸和均匀的薄膜。

2. 发明专利

JPS6140025A Manufacture of silicon thin film 失效
标题翻译：硅薄膜的制造
公开(公告)号：JPS6140025A
公开(公告)日：1986-02-26
申请号：JP16243684
申请日：1984-07-31
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： TSUSHIMO KAZUNAGA , OWADA YOSHIHISA
IPC分类号： H01L31/04 , C23C14/14 , C23C16/24 , C23C16/48 , C23C16/50 , H01L21/205
CPC分类号： C23C14/14 , C23C16/24
摘要： PURPOSE:To obtain a good quality of Si thin film by a method wherein a solid body is supported in discharge plasma and the Si compound in the solid body is decomposed by discharge while a laser beam is irradiated on the solid body. CONSTITUTION:A solid body 1 is put on a quartz stand 2 in a reaction container 4 provided with discharge electrodes 6 connected to a power source 7, a raw material feeding line 3 and a vacuum line 7 and the solid body 1 is supported in plasma. The solid body is a sigle substance of Si, Ge or Al and so forth, or a lamellar material, a linear material or a particle-shaped material, which is made of a compound of a proper mixture of Si, Ge Al and so forth and N, H, F or O. Silane fluoride or organic silane is introduced as the raw material and a laser beam of Ar is scanned on the solid body put in high-frequency glow discharge to irradiate. The Si compound in the solid body is decomposed by discharge and is deposited on a substrate 5, the active species in the plasma and the solid body react upon each other on the surface of the solid body by the laser beam and the Si compound is further decomposed by discharge and is deposited on the substrate 5. By adjusting the kind of the solid body and the wavelength and intensity of the laser beam, an Si thin film, wherein an element of III Group or V Group is added, an Si thin film of Si or SiC and so forth, a microcrystalline or amorphous Si thin film, or an Si thin film, by which a p-i-n junction is formed, can be formed.
摘要翻译：目的：为了通过在放电等离子体中支撑固体的方法获得优质的Si薄膜，并且在激光束照射在固体上时，固体中的Si化合物通过放电而分解。构成：在设置有与电源7，原料供给管线3和真空管线7连接的放电电极6的反应容器4中的实心体1上放置固体1，固体1被支撑在等离子体。固体是Si，Ge或Al等的单质物质，或由Si，GeAl等的适当混合物的化合物制成的层状材料，线状材料或粒状材料和N，H，F或O.引入硅烷氟化物或有机硅烷作为原料，并且在固体上扫描Ar的激光束进行高频辉光放电以照射。固体中的Si化合物通过放电分解并沉积在基板5上，等离子体和固体中的活性物质通过激光束在固体的表面上彼此反应，并且Si化合物进一步通过放电分解并沉积在基板5上。通过调整固体的种类和激光束的波长和强度，添加其中添加III族或V族的元素的Si薄膜，将Si薄膜的Si或SiC等，可以形成微结晶或非晶Si薄膜，或通过其形成pin结的Si薄膜。

3. 发明专利

JPS61116826A Formation of thin film 失效
标题翻译：形成薄膜
公开(公告)号：JPS61116826A
公开(公告)日：1986-06-04
申请号：JP23810984
申请日：1984-11-12
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： NISHIMURA KUNIO , NAKAYAMA TAKEHISA , TSUSHIMO KAZUNAGA , OWADA YOSHIHISA , HIRATA HISANORI , IZUMINA MASANOBU
IPC分类号： H01L31/04 , H01L21/20 , H01L21/205 , H01L21/31
CPC分类号： H01L21/0262 , H01L21/02532
摘要： PURPOSE:To form a thin film of uniform thickness on the entire region by supplying RF power to each of 3-5 electrode lines of odd and even numbers from a single unit of power supply through a matching circuit and electrical element and by changing electrical constants of electric elements. CONSTITUTION:The electrical elements 13b, 13d are connected between the terminal 12a of matching circuit 12 and electrodes 9b, 9d of even numbers, while the electrical elements 13a, 13c, 13e between the terminal 12b and electrodes 9a, 9c, 9e of odd numbers. Connecting method, position and kind of electrical element are selected so that uniform discharge of each discharge region becomes uniform. At the time of forming a thin film, raw material gas is introduced to the vacuum condition and RF power is also supplied to each electrode to form plasma between electrodes and discharge intensity of regions is set uniform by adjusting electrical elements. Therefore, it is advantageous to use a variable capacitance and variable coil. According to this structure, a thin film of uniform thickness can be formed in respective regions even with the lateral plasma method having a plurality of discharge regions.
摘要翻译：目的：通过匹配电路和电气元件从单个电源中提供3〜5个奇偶数电极线的RF电源，并通过改变电常数来形成整个区域均匀厚度的薄膜的电气元件。构成：电气元件13b，13d连接在匹配电路12的端子12a和偶数的电极9b，9d之间，而端子12b和电极9a，9c，9e之间的电气元件13a，13c，13e为奇数。选择电气元件的连接方式，位置和种类，使得每个放电区域的均匀放电变得均匀。在形成薄膜时，将原料气体引入真空状态，并且还向每个电极提供RF功率以在电极之间形成等离子体，并且通过调节电气元件将区域的放电强度设定为均匀。因此，使用可变电容和可变线圈是有利的。根据该结构，即使采用具有多个放电区域的侧面等离子体方法，也能够在各个区域形成均匀厚度的薄膜。

4. 发明专利

JPS6132416A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6132416A
公开(公告)日：1986-02-15
申请号：JP15253184
申请日：1984-07-23
申请人： Kanegafuchi Chem Ind Co Ltd , Res Dev Corp Of Japan
发明人： KONDO MASATAKA , TANDO TOSHITO , NISHIMURA KUNIO , TSUSHIMO KAZUNAGA , OWADA YOSHIHISA
IPC分类号： H01L31/04 , H01L21/205
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02592
摘要： PURPOSE:To reduce the decline of characteristics caused by reduction and metallization of a transparent conductive film of oxide by specifying the temperature for forming films at a time when an amorphous silicon film is formed on the transparent conductive film. CONSTITUTION:On a transparent conductive film of oxide such as ITO, the amorphous semiconductor which consists of a-Si:H, a-SiC:H at a first dope layer, a-Si:H, a-Si:F as an intrinsic layer, a-SiC:H, a-Si:H as the second dope layer, (the conductive type is opposite to that of the first dope layer) is deposited. The temperature for forming the first dope layer is set at 180 deg.C, the temperatures for the intrinsic layer and the second impurity dope layer are set at 160- 350 deg.C. The temperature for the first dope layer is more preferably 10-40 deg.C by which a substrate is cooled. As a result, the transparent conductive film becomes hard to be reduced even when it contacts with a reducing plasma including hydrogen atoms and the decline of semiconductor characteristics such as the generation of recombination center caused by pollution of the semiconductor layer by the produced metal.
摘要翻译：目的：通过在透明导电膜上形成非晶硅膜时规定形成薄膜的温度来减少氧化物透明导电膜的还原和金属化引起的特性的下降。构成：在诸如ITO的氧化物的透明导电膜上，在第一掺杂层上由a-Si：H，a-SiC：H组成的非晶半导体，a-Si：H，a-Si：F作为内在的作为第二掺杂层的a-SiC：H，a-Si：H（导电类型与第一掺杂层的导电类型相反）。用于形成第一掺杂层的温度设定为180℃，本征层和第二杂质掺杂层的温度设定在160-350℃。第一涂料层的温度更优选为10-40℃，通过该温度冷却基材。结果，即使当透明导电膜与包括氢原子的还原等离子体接触以及半导体特性的下降（例如由所产生的金属对半导体层的污染引起的复合中心的产生）时，也难以降低。

5. 发明专利

JPS6188571A Photodetector 失效
标题翻译：照相机
公开(公告)号：JPS6188571A
公开(公告)日：1986-05-06
申请号：JP20996684
申请日：1984-10-05
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： OWADA YOSHIHISA , TSUSHIMO KAZUNAGA
IPC分类号： H01L31/04 , H01L31/10 , H01L31/105 , H01L31/20
CPC分类号： H01L31/1055 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： PURPOSE:To improve sensitivity on the short wavelength side by making an N type dopant in concentration sufficient for increasing the mutau (the product of mobility and lift) of electrons on beam projection to contain into an amorphous semiconductor. CONSTITUTION:When P type a-Si:H in 120Angstrom , substantially intrinsic a-Si:H in 5,000Angstrom and Si:H in 500Angstrom containing N type crystallites are deposited on a glass/SnO2 substrate and intrinsic a-Si:H is shaped by a photodetector on which an Al electrode is evaporated, N2 gas is doped by 10ppm, 40ppm, 100ppm and 400ppm to SiH4. Accordingly, sensitivity on the long wavelength side slightly lowers with the increases of the quantity of N2 doped, but sensitivity on the short wavelength side is enhanced remarkably.
摘要翻译：目的：通过使N型掺杂剂的浓度足以提高电子束投影的电子（迁移率和升高的乘积）以包含在非晶半导体中，从而提高短波长侧的灵敏度。构成：当P型a-Si：H为120A时，在500Ang的基本上本征的a-Si：H和含有500的N型微晶中的Si：H沉积在玻璃/ SnO 2衬底上，并且固有的a-Si：H成形通过其上蒸发有Al电极的光电检测器，向SiH 4掺杂10ppm，40ppm，100ppm和400ppm的N 2气体。因此，随着N 2掺杂量的增加，长波长侧的灵敏度稍微降低，但是短波长侧的灵敏度显着提高。

6. 发明专利

JPS6126268A Heat-resistant amorphous silicon solar cell and manufacture thereof 失效
标题翻译：耐高温非晶硅太阳能电池及其制造
公开(公告)号：JPS6126268A
公开(公告)日：1986-02-05
申请号：JP14841184
申请日：1984-07-16
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： OWADA YOSHIHISA , TAKADA JUN , YAMAGUCHI YOSHINORI
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/075
CPC分类号： H01L31/075 , H01L31/022425 , Y02E10/548
摘要： PURPOSE:To prevent the decrease in characteristic due to the diffusion of the back electrode into the semiconductor by a method wherein a Cr layer of suitable thickness is provided between the semiconductor and the back electrode. CONSTITUTION:A Cr layer having a thickness of 10-1,000Angstrom preferably 30- 300Angstrom is provided between the semiconductor and the back electrode. The thickness of this Cr layer of less than 10Angstrom can not yield layers of uniform and good quality or can not sufficiently prevent the thermal diffusion of the metal forming the back electrode into the semiconductor. Besides, the layer thickness in excess of 1,000Angstrom increases the series electric resistance in the presence of this layer, decreases the light reflectance, and gives a lot of time in formation of Cr layers. The solar cell thus manufactured can be properly used in the case of use at a high temperature of e.g. 50 deg.C or more.
摘要翻译：目的：通过在半导体和背面电极之间设置适当厚度的Cr层的方法，防止由于背面电极向半导体的扩散而引起的特性的降低。构成：在半导体和背面电极之间设置厚度为10-1000埃，优选30-300埃的Cr层。小于10A的Cr层的厚度不能产生均匀且质量好的层，或者不能充分防止形成背电极的金属的热扩散进入半导体。此外，超过1000A的层厚度在存在该层的情况下增加了串联电阻，降低了光反射率，并且在形成Cr层时产生了大量的时间。如此制造的太阳能电池可以在例如高温下使用的情况下适当地使用。 50℃以上。

7. 发明专利

JPS6191974A Heat resisting multijunction type semiconductor element 失效
标题翻译：耐热多功能型半导体元件
公开(公告)号：JPS6191974A
公开(公告)日：1986-05-10
申请号：JP21394484
申请日：1984-10-11
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： TAKADA JUN , YAMAGUCHI YOSHINORI , OWADA YOSHIHISA
IPC分类号： H01L31/04 , H01L25/07 , H01L29/868 , H01L31/075 , H01L31/20
CPC分类号： H01L31/076 , H01L25/074 , H01L29/868 , H01L31/202 , H01L2224/32145 , H01L2924/0002 , Y02E10/548 , Y02P70/521 , H01L2924/00
摘要： PURPOSE: To prevent a semiconductor element from deteriorating in performance by a method wherein 3 and 5 valence dopant atomic diffusion blocking layers are provided between p- and n- layers to block the mutual diffusion between the p- and n-layers.
CONSTITUTION: Amorphous p-layers, i-layers and n-layers are formed by means of conventional process on a transparent substrate 1 with a transparent electrode 2 to form diffusion blocking layers with specified thickness by means of conventional electronic beam evaporating process using chrome etc. At this time, repeat this process as often as necessary to form multijunctions for continuous evaporation of a backside electrode atomic diffusion block layer 4 and a backside electrode 5 with specified thickness. Finally the block layer 4 and the a-Si:H semiconductor layer 5 may be heat-treated at normal temperature of 150∼400°C for 0.2∼5hr for interfacial reaction to bring them into better contact.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了防止半导体元件的性能恶化，其中在p层和n层之间设置3价和5价的掺杂剂原子扩散阻挡层以阻挡p层和n层之间的相互扩散。构成：通过常规工艺在具有透明电极2的透明基板1上形成无定形p层，i层和n层，以通过使用铬等的常规电子束蒸发工艺形成具有特定厚度的扩散阻挡层此时，根据需要经常重复该过程，以形成用于连续蒸发背面电极原子扩散阻挡层4和具有规定厚度的背面电极5的多连接。最后，可以在150-400℃的常温下对块层4和a-Si：H半导体层5进行热处理0.2-5小时，以进行界面反应以使它们更好地接触。

8. 发明专利

JPS6191973A Heat resisting thin film photoelectric conversion element and manufacture thereof 失效
标题翻译：耐热薄膜光电转换元件及其制造
公开(公告)号：JPS6191973A
公开(公告)日：1986-05-10
申请号：JP21394384
申请日：1984-10-11
申请人： Kanegafuchi Chem Ind Co Ltd
发明人： TAKADA JUN , YAMAGUCHI YOSHINORI , OWADA YOSHIHISA
IPC分类号： H01L31/04 , H01L31/0224 , H01L31/075 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022425 , Y02E10/52 , Y02E10/548
摘要： PURPOSE:To improve the heat resisting thin film photoelectric conversion element characteristics by a method wherein a silicon layer (Cr-Si layer) 5-1,000Angstrom thick containing 1-90atom% of chrome is provided between a semiconductor and a backside electrode. CONSTITUTION:An amorphous p layer, an i layer and an n layer are formed on a transparent substrate with a transparent electrode. Then a layer with specified thickness is formed of chrome silicide. The composition of chrome silicide may be properly selected conforming to the composition of Cr-Si layer. Later, a heat resisting thin film photoelectric conversion element may be produced by means of depositing a backside electrode ulilizing conventional process. Moreover when the element is processed at the filming temperature of 180 deg.C (around 180-400 deg.C) for 0.5-4hr, the contact between semiconductor layer/Cr-Si layer/backside electrode may be improved to reduce the series resistance on the interface thereof.
摘要翻译：目的：通过在半导体和背面电极之间设置含有1-90原子％铬的5-1000埃的硅层（Cr-Si层）来提高耐热薄膜光电转换元件的特性。构成：在具有透明电极的透明基板上形成非晶p层，i层和n层。然后由铬硅化物形成具有规定厚度的层。可以根据Cr-Si层的组成适当选择硅化铬的组成。之后，可以通过沉积背面电极消毒常规方法来制造耐热薄膜光电转换元件。此外，当元件在180℃（约180-400℃）的成膜温度下加工0.5-4小时时，可以改善半导体层/ Cr-Si层/背面电极之间的接触以降低串联电阻在其界面上。

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