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1. 发明专利

JPH02220857A THERMAL HEAD 失效
公开(公告)号：JPH02220857A
公开(公告)日：1990-09-04
申请号：JP4393589
申请日：1989-02-23
申请人： KOBE STEEL LTD , SHINKO ELECTRIC CO LTD
发明人： NAKAGAMI AKIMITSU , TACHIBANA HIROYUKI , KAJIKAWA HIROSHI , SUGIYAMA HAYAMI , KUBOTA TAKASHI , OGURA KENJI
IPC分类号： B41J2/345
摘要： PURPOSE:To improve printing quality by forming the thickness of a heat generating resistor disposed between one electrode and the other electrode in a recess state to a current passing direction. CONSTITUTION:In a resistor heat generator 3a disposed between one electrode 4a and the other electrode 4b, the thicknesses (t1+t2) of parts disposed in the vicinity of the electrodes 4a, 4b are thicker than the thickness t1 of a lower layer heat generating resistor 3b disposed therebetween, i.e., the thickness of the generator 3a is formed in a recess shape to a current passing direction. Thus, the electric resistance values of the parts disposed in the vicinity of the electrodes 4a, 4b are smaller than that of the part of the resistor 3b. Thus, heat generated from the parts disposed in the vicinity of the electrodes 4a, 4b is reduced as compared with the heat generated from the part of the resistor 3b. Accordingly, since the heats removed from the electrodes 4a, 4b can be reduced, an ink 18 on an ink film 16 is sufficiently melted to prevent insufficient density, blur of character, number, etc., from occurring to be transferred on an image receiving sheet 19, thereby improving printing quality.

2. 发明专利

JPH02205668A SPUTTERING TARGET 失效
公开(公告)号：JPH02205668A
公开(公告)日：1990-08-15
申请号：JP2335189
申请日：1989-01-31
申请人： KOBE STEEL LTD , SHINKO ELECTRIC CO LTD
发明人： NAKAGAMI AKIMITSU , TACHIBANA HIROYUKI , ONISHI YOSHIHIKO , KUBOTA TAKASHI , SUGIYAMA HAYAMI , OGURA KENJI
IPC分类号： C23C14/34
摘要： PURPOSE:To form a geometrically arranged target of micrometer order size by forming a film of a secondary material on the surface of a discoid target base material into a continuous-film state and then partially removing the above continuous film by means of etching work. CONSTITUTION:A disk 1 of a primary material, such as SiO2, is used as a base material, and a sputtered film of a secondary material, such as Cr, in a state of continuous film is formed on the above disk 1, which is then formed into a geometrically arranged Cr sputtered film target, e.g. of mosaic pattern 2 by means of ordinary photoetching using photoresist. By using this target, a microscopically uniform film having fixed composition ratio and stable properties can be obtained.

3. 发明专利

JPH0393554A THERMAL HEAD AND ITS MANUFACTURE 失效
公开(公告)号：JPH0393554A
公开(公告)日：1991-04-18
申请号：JP23200889
申请日：1989-09-06
申请人： SHINKO ELECTRIC CO LTD , KOBE STEEL LTD
发明人： SUGIYAMA HAYAMI , KUBOTA TAKASHI , OGURA JOJI , NAKAGAMI AKIMITSU , TACHIBANA HIROYUKI , ONISHI YOSHIHIKO
IPC分类号： B41J2/335
摘要： PURPOSE:To obtain a thermal head which has excellent wear resistance and thermal shock resistance by a method wherein for a wear resistant layer, silicon carbide is used, and the component ratio between C and Si for the silicon carbide is continuously or discontinuously changed in the thickness direction of the wear resistant layer so that the component ratio at a heating resisting body side becomes minimum. CONSTITUTION:On an earthing electrode 12, a substrate 1 is placed, and from a gas inducing port 10a, a mixed gas which is composed of C2H4 as a hydrocarbon gas and SiH4 as a hydrogen silicide gas is induced in a decompression chamber 10 while the mixing ratio of the mixed gas is being changed. When a prescribed voltage is applied to an electrode 11, carbon C and silicon Si in the hydrocarbon gas and hydrogen silicide gas which have been excited by the applied voltage adhere to the substrate 1 in accordance with a mixed component ratio y/x, and on the surface of this substrate 1, a wear resistant layer 6, which is composed of SixCy, is formed. For example, the component ratio at a heating resisting body 3 side is taken as y/x=0.6, and the y/x value is gradually made larger in the thickness direction of the wear resistant layer 6, and at the surface, it is made to be y/x=2.8.

4. 发明专利

JPH0393553A THERMAL HEAD 失效
公开(公告)号：JPH0393553A
公开(公告)日：1991-04-18
申请号：JP23200789
申请日：1989-09-06
申请人： SHINKO ELECTRIC CO LTD , KOBE STEEL LTD
发明人： SUGIYAMA HAYAMI , KUBOTA TAKASHI , OGURA KENJI , NAKAGAMI AKIMITSU , TACHIBANA HIROYUKI , ONISHI YOSHIHIKO
IPC分类号： B41J2/335
摘要： PURPOSE:To equip an excellent durability against thermal shock by a method wherein between a heating resisting body layer, and a wear resistant layer, a thermal relaxation layer which has a hardness lower than the wear resistant layer and also has electric insulating property is provided. CONSTITUTION:On the upper surface of a substrate 1, a glazed glass layer 2, a heating resisting body layer 3 and electrode 4 are laminated in order, and at the same time, on the electrode 4, a thermal relaxation layer 6 is laminated. This thermal relaxation layer 6 is coated with a wear resistant layer 5 which makes contact with heat-sensitive paper. For example, the thermal relaxation layer 6 with a film thickness of 2mum is formed on the electrode 4 with silicon oxide with Knoop hardness 800, on this thermal relaxation layer 6, the wear resistant layer 5 which becomes AC with a film thickness of 2mum can be formed without trouble. Therefore, heat generated by the heating resisting body is transmitted to the wear resistant layer through this thermal relaxation layer 6. In the meantime, since this thermal relaxation layer 6 has an electric insulating property, the electrode does not short circuit, etc.

5. 发明专利

JP2002220674A PLASMA CVD APPARATUS 失效
公开(公告)号：JP2002220674A
公开(公告)日：2002-08-09
申请号：JP2001017359
申请日：2001-01-25
申请人： KOBE STEEL LTD , MORI YUZO
发明人： INOUE KENICHI , NAKAGAMI AKIMITSU , ISHIBASHI KIYOTAKA , HAYASHI KAZUYUKI , KUGIMIYA TOSHIHIRO , GOTO YASUSHI , MORI YUZO
IPC分类号： H05H1/46 , B01J19/08 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can improve a temperature of a base material near a rotating electrode. SOLUTION: The plasma CVD apparatus for treating the surface of a substrate 5, with plasma generated between the rotating electrode 10 and the substrate 5, along with transferring the substrate 5 so as to pass by a cylindrical rotating electrode 10 which is rotatably arranged inside a reactive vessel 1 to which source gas is fed, comprises an electrode layer 13 arranged on an outer surface layer of the rotating electrode 10, and an electromagnetic induction heating means (electromagnetic induction coils 27 and 28, a rotation axis 11 all made of a ferromagnetism material, bearings 22 and 23, adapter plates 25 and 26, and a supporting member 24) for heating an electrode layer 13 by eddy-current generated in the electrode layer 13.

6. 发明专利

JP2002141398A APPARATUS AND METHOD OF SURFACE TREATMENT 失效
公开(公告)号：JP2002141398A
公开(公告)日：2002-05-17
申请号：JP2000335749
申请日：2000-11-02
申请人： KOBE STEEL LTD
发明人： ISHIBASHI KIYOTAKA , NAKAGAMI AKIMITSU , KOBAYASHI AKIRA , OKADA KAZUTO , HAYASHI KAZUYUKI , GOTO YASUSHI
IPC分类号： B65G49/00 , C23C14/50 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a small and simply structured apparatus of surface treatment capable of universally shutting off a treating space for treating surface of a material to be treated from a carrying space including a carrying means and preventing leakage of treating gas from the treating space to the carrying space. SOLUTION: Between a lower end of a covering wall 47 for covering the surface treating means 41 and surface of a dummy D disposed in circumference of the material to be treated carried by the carrying means 2 through a holding pallet 3, a gap 8 to which carrying-space gas can flow from the carrying space 1a side including the carrying means to the treating space 4a inside of the covering wall 47 is formed, a treating-gas introduction line 45 is put through to the treating space 4a, and a carrying-space gas delivery line 6 is put through to the carrying space 1a to make the gas pressure in the carrying space 1a higher than that in the treating space 4a.

7. 发明专利

JP2000355773A THIN FILM DEPOSITION SYSTEM 失效
公开(公告)号：JP2000355773A
公开(公告)日：2000-12-26
申请号：JP16502299
申请日：1999-06-11
申请人： KOBE STEEL LTD , MORI YUZO
发明人： MORI YUZO , HAYASHI KAZUYUKI , MASUI TAKUYA , KINOSHITA TAKASHI , TAKAHASHI TOSHIAKI , OSADA KOICHI , NAKAGAMI AKIMITSU
IPC分类号： H01L21/205 , C23C16/505 , G03G5/08
摘要： PROBLEM TO BE SOLVED: To deposit a film of high quality at a high speed by suppressing the deposition of particles on a substrate. SOLUTION: A rotating electrode 18 is confronted with a substrate, and, while plasma is generated on the space therebetween, this plasma is fed with reaction gas to cause chemical reaction, by which a thin film is formed on the substrate. By providing a means of heating the electrode 18 and increasing the surface temp. of the electrode, the generation of particles is suppressed. Moreover, in consideration of the formation of a thin film on the surface by the electrode heating, the control of fixedly retaining the effective distance between the circumferential face of the electrode and the surface of the substrate is executed, e.g. by lowering a substrate carrying stand 12 in accordance with the increase of the total film forming time.

8. 发明专利

JPH11229187A SUBSTRATE FOR ELECTRONIC MATERIAL EXCELLENT IN INSULATING PROPERTY AND ITS PRODUCTION 失效
公开(公告)号：JPH11229187A
公开(公告)日：1999-08-24
申请号：JP13713998
申请日：1998-05-19
申请人： KOBE STEEL LTD
发明人： HISAMOTO ATSUSHI , HASHIMOTO IKUO , KAMIKUBO FUMIO , MASUI TAKUYA , SUZUKI KOHEI , NAKAGAMI AKIMITSU
IPC分类号： G02F1/1333 , C25D11/18
摘要： PROBLEM TO BE SOLVED: To provide a flexible substrate for an electronic material to be hardly broken, capable of making it lighter than a glass substrate and excellent in insulating property and the production method. SOLUTION: In a substrate for an electronic material consisting of a base and a surface insulating layer, the surface insulating layer is formed by >=1 kind of metal oxide and a nonconductive material other than the oxide. Al oxide, Ti oxide, Zr oxide, Mg oxide, Si oxide, Sn oxide, etc., are exemplified as the metal oxide and the Al oxide is preferably used among them. The oxide, nitride, hydroxide or oxyhydroxide of >=1 kind of an element selected from a group consisting of Al, Si, Ti, Zr, Li, Mg, Sn and Zn are exemplified as the nonconductive oxide and in this case, a soln. in which a compd. having an Si-O bond is dissolved, is applied to the surface of an anodically oxidized film 2 and baked to form a surface insulating layer contg. the Si oxide.

9. 发明专利

JPH03131003A DIAMOND THIN-FILM THERMISTOR 失效
公开(公告)号：JPH03131003A
公开(公告)日：1991-06-04
申请号：JP27008589
申请日：1989-10-16
申请人： KOBE STEEL LTD
发明人： KOBASHI KOJI , MIYATA KOICHI , KUMAGAI KAZUO , INOUE TAKAYOSHI , TACHIBANA HIROYUKI , NAKAGAMI AKIMITSU
IPC分类号： G01K7/22 , H01C7/04 , H01L21/822 , H01L27/04
摘要： PURPOSE:To enable a thermistor with high-speed response characteristic to be mass-produced without any scattering in properties by forming an electrically insulated diamond film onto a substrate in layer by the gaseous phase synthesis method, by laminating a temperature-sensitive part of semiconductor diamond thin film onto it by the gaseous phase synthesis method, and then attaching a metal thin-film electrode onto it. CONSTITUTION:An electrically insulated diamond film 2a is uniformly formed on a ceramic or a metal substrate 1. Then, a semiconductor diamond thin film 3a with a thermistor pattern is formed by the selective growth technology. The film thickness of the insulated diamond film 2a is for example 10mum and that of the semiconductor diamond thin film 3a is approximately 2mum. Then, a metal electrode 4 is formed by the lithography technology and then a lead wire 7 is attached to it. Thus, since heat conductivity of the diamond thin film is large and a temperature-sensitive part 6a is formed by the semiconductor diamond thin film 3a with a specific pattern rather than a uniform thin film, temperature becomes uniform quickly and the response speed becomes fast.

10. 发明专利

JPH02184598A SELECTIVE FILM FORMATION OF DIAMOND THROUGH VAPOR SYNTHESIS 失效
公开(公告)号：JPH02184598A
公开(公告)日：1990-07-19
申请号：JP409289
申请日：1989-01-10
申请人： KOBE STEEL LTD
发明人： INOUE TAKAYOSHI , TACHIBANA HIROYUKI , NAKAGAMI AKIMITSU , KUMAGAI KAZUO , MIYATA KOICHI , KOBASHI KOJI
IPC分类号： C30B25/04 , C30B29/04 , H01L21/205 , H01L21/31
摘要： PURPOSE:To obtain a synthetic diamond thin film of micron order thickness by vapor synthesis of diamond on a Si substrate with a photoresist film of desired pattern formed thereon. CONSTITUTION:The surface 1a of a Si substrate 1 abraded to a coarseness suitable for the vapor synthesis of diamond is coated with a positive photoresist 2 using a spinner followed by prebaking to remove the organic solvent followed by ultraviolet 4 irradiation through a mask aligner 3 having desired circuit and pattern to effect photosensitization of a resist part 2a. Thence, the light- exposed resist part 2a is removed with a developer followed by host baking of a light unexposed resist part 2b to effect solidification. The surface 1a free from resist part 2b is then subjected to reactive ionic etching using a plasma of a mixed gas comprising CF4, O2 and Ar to form an etched surface 1b followed by eliminating the residual photoresist 2b to expose the residual abraded surface 1c, and the objective diamond thin film 5 is formed through vapor synthesis on this surface 1c.

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