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1. 发明专利

JPH08148445A METHOD OF FORMATION OF METAL CARBIDE ELECTRODE ON DIAMOND 失效
公开(公告)号：JPH08148445A
公开(公告)日：1996-06-07
申请号：JP28998094
申请日：1994-11-24
申请人： KOBE STEEL LTD
发明人： KOYAMA HISASHI , KUMAGAI KAZUO , NISHIMURA KOZO
IPC分类号： H01L21/28 , H01L21/285 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide a method of formation of a carbide metal electrode, to be formed on a diamond layer, having high degree of close contact and high heat-resisting property, and also having the side face making at right angle with the upper surface of the diamond layer. CONSTITUTION: First, as a carbide metal film forming process, a polycrystalline diamond layer 8 is synthesized on an Si substrate 7 by a vapor phase synthesizing method, and subsequently, a titanium carbide layer 9 is vapor-deposited on the polycrystalline diamond layer 8 using a sputtering method. Then, a photoresist pattern 10 is formed on the prescribed region of the titanium carbide layer 9. Then, using CF4 as etching gas, for example, reactive ion etching is conducted under the condition of etching gas pressure of 30mTorr and RF power of 400W, and a carbide metal electrode 9a of prescribed shape is obtained.

2. 发明专利

JPH0817801A ECR PLASMA ETCHING METHOD OF DIAMOND THIN FILM 失效
公开(公告)号：JPH0817801A
公开(公告)日：1996-01-19
申请号：JP14794794
申请日：1994-06-29
申请人： KOBE STEEL LTD
发明人： KUMAGAI KAZUO , NISHIZUKA TETSUYA , KINOSHITA TAKASHI , NOZAWA TOSHIHISA
IPC分类号： G01R33/64 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To etch a surface smoothly without causing protrusions due to a rough surface by etching a diamond thin film with a mixed gas of oxygen and argon where the concentration range of oxygen gas, a reaction gas pressure, and a microwave power surface density are specific values. CONSTITUTION:A sample substrate S where a diamond thin film is formed is positioned near the middle position of a pair of magnetic coils 4a and 4b, namely near the center of a mirror magnetic field, by moving and adjusting a sample stand 5 up and down. Then, a bias voltage is applied to the sample substrate S and at the same time is cooled, a mixed gas of oxygen and argon whose oxygen gas concentration range is 2-20vol.% is used as a reaction gas, and the reaction gas pressure is set to 10mTorr or less. Then, the diamond thin film is etched where a microwave power surface density is 2.0W/cm or less.

3. 发明专利

JPH0518935A DIAMOND THIN-FILM ION SENSOR 失效
公开(公告)号：JPH0518935A
公开(公告)日：1993-01-26
申请号：JP19882291
申请日：1991-07-11
申请人： KOBE STEEL LTD
发明人： KUMAGAI KAZUO
IPC分类号： G01N27/414
摘要： PURPOSE:To provide a diamond thin-film ion sensor which is less subjected to insulation breakdown and is superb in water-tightness. CONSTITUTION:An insulation film 2 consisting of an electrically insulated diamond is coated on an Si substrate 1 and a semiconductor film 3 consisting of a semiconductor diamond is formed on this insulation film 2. Electrodes 4a and 4b consisting of a semiconductor diamond are formed on this semiconductor film 3 while they are isolated mutually. Further, an insulation film 5 consisting of the electrically insulated diamond is formed on an entire surface of the substrate 1. In this case, the insulation film 5 between the electrodes 4a and 4b acts as an ion-sensitive film.

4. 发明专利

JPH059735A VAPOR SYNTHESIS OF DIAMOND 失效
公开(公告)号：JPH059735A
公开(公告)日：1993-01-19
申请号：JP19581191
申请日：1991-07-09
申请人： KOBE STEEL LTD
发明人： MIYAUCHI SHIGEAKI , KATO RIE , KUMAGAI KAZUO , NISHIMURA KOZO , KOBASHI KOJI
IPC分类号： C23C16/26 , C23C16/27 , C23C16/46 , C23C16/50 , C23C16/503 , C30B29/04
摘要： PURPOSE:To provide a diamond thin film contg. less non-diamond components and having high quality as a novel material for fields of environmental resistant semiconductors and optical coating, etc., by synthesizing the above-mentioned thin film at a temp. lower than heretofore. CONSTITUTION:Gases contg. at least carbon and hydrogen and/or oxygen are used as reactive gases. The pressure of such reactive gases is set under 0.1 to 5Torr and the substrate temp. is set at 300 to 1000 deg.C. The thin film of the diamond is then formed on the substrate by DC discharge plasma. The diamond thin film having the good quality is formed at the temp. as low as 300 to 400 deg.C in this way.

5. 发明专利

JPH03222376A DIAMOND SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH03222376A
公开(公告)日：1991-10-01
申请号：JP1759190
申请日：1990-01-26
申请人： KOBE STEEL LTD
发明人： KOBASHI KOJI , MIYATA KOICHI , KUMAGAI KAZUO , MIYAUCHI SHIGEAKI , MATSUI YUICHI
IPC分类号： C09K11/65 , H01B1/04 , H01L21/205 , H01L33/00 , H01L33/34 , H01L33/40
摘要： PURPOSE:To enable a diamond semiconductor light emitting element to emit light rays of different colors in a short wavelength range by a method wherein a diamond semiconductor layer, a diamond insulator layer, and a front electrode are successively provided onto a conductive substrate, and a back electrode is provided coming into ohmic contact with the conductive substrate. CONSTITUTION:A P-type diamond semiconductor layer 2a is synthesized in vapor phase on a low resistive Si substrate (silicon wafer) 1. In succession, a diamond insulator layer 3 is formed thereon, furthermore a front electrode 4 is built thereon, and a back electrode 5 is formed coming into ohmic contact with the Si substrate 1. If a voltage of 350V or so is applied between the electrodes 4 and 5 of this diamond semiconductor light emitting element so as to make the front electrode 4 negative in potential, the light emitting element starts emitting green white light rays, and the element can be easily enhanced and controlled in emission intensity without causing dielectric breakdown by increasing the applied voltage. The relation between the applied voltage and emission intensity can be varied by changing the diamond insulator layer 3 in thickness.

6. 发明专利

JPH03105974A MANUFACTURE OF SCHOTTKY DIODE BY SYNTHESIZING POLYCRYSTALLINE DIAMOND THIN FILM 失效
公开(公告)号：JPH03105974A
公开(公告)日：1991-05-02
申请号：JP24439989
申请日：1989-09-19
申请人： KOBE STEEL LTD
发明人： MIYATA KOICHI , KUMAGAI KAZUO , KOBASHI KOJI , MATSUI YUICHI , NAKAGAMI AKIMITSU
IPC分类号： H01L21/205 , H01L21/04 , H01L21/20 , H01L21/285 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/862 , H01L29/872
摘要： PURPOSE:To obtain a Schottky diode whose characteristic is good by a method wherein, when a polycrystalline diamond thin film is synthesized, CH4/H2 gas is used as a raw material and a concentration of B/C in the gas is specified. CONSTITUTION:Microwaves are oscillated by a power supply 1 ; they are guided to a reaction chamber 6 by using a waveguide 5 via an isolator 2, a power monitor 3 and a tuner 4. The reaction chamber 6 is made of a quartz tube; it is bored perpendicularly through the waveguide 5; a substrate 7 is placed in a crossed part inside the chamber. CH4/H2 gas is introduced into the chamber and is irradiated with the microwaves. Thereby, a plasma is generated so as to surround the substrate; a polycrystalline diamond thin film is formed on the substrate. When B/C of B gas added at this synthesis is set at 0.01ppm or higher and 20ppm or lower, it is possible to manufacture a good Schottky diode.

7. 发明专利

JPH02217397A VAPOR-PHASE SYNTHESIS OF THIN FILM OF N-TYPE SEMICONDUCTOR DIAMOND 失效
公开(公告)号：JPH02217397A
公开(公告)日：1990-08-30
申请号：JP3716689
申请日：1989-02-15
申请人： KOBE STEEL LTD
发明人： MIYATA KOICHI , KUMAGAI KAZUO , KOBASHI KOJI
IPC分类号： C30B29/04 , C23C16/27 , C30B25/02 , H01L21/205 , H01L29/16 , H01L31/0288 , H01L31/105
摘要： PURPOSE:To obtain diamond thin film in excellent reproducibility with simultaneously performing film making of diamond thin film and doping by adding Si- containing gas to raw material gas containing C synthesizable diamond thin film and decomposing. CONSTITUTION:Gas containing Si as a component is added to raw material gas in a range of Si/C>=2.0% in a method of separating diamond by decomposing raw material gas on a base set in raw material gas containing C synthesizable diamond thin film as a component. A small amount of Si as Si/C

8. 发明专利

JPS63281702A METHOD FOR SPLIT ROLLING 失效
公开(公告)号：JPS63281702A
公开(公告)日：1988-11-18
申请号：JP11936987
申请日：1987-05-15
申请人： KOBE STEEL LTD
发明人： KUMAGAI KAZUO
IPC分类号： B21B1/16 , B21B1/08
摘要： PURPOSE:To hold sure separation and to obtain plural equal final shape rolled stocks by forming a thin part and preparatory formed parts connecting with the thin part and dividing the preparatory parts into two parts by passing the preparatory parts between stepped rollers facing to each other. CONSTITUTION:One square stock 1, etc. is flattened by preparatory rolling, a thin part 2 along the rolling direction is formed, and then a couple of flat parts F connected with the thin part S are formed by the succeeding rolling. Next, the stock is passed through a split roller stand having a couple of separator rollers SR consisting of a large diameter part D1 and a small diameter part D2. A separating force, caused by a peripheral speed difference between that of the part D1 and that of the part D2 of the roller SR, which separates the plural preparatorily formed parts up and down is applied to the parts so that the parts are separated at the thin part S. Separated square stocks 1 are rolled to be an oval shape and then are rolled to be a round shape.

9. 发明专利

JPS6351805B2 失效
公开(公告)号：JPS6351805B2
公开(公告)日：1988-10-17
申请号：JP19330683
申请日：1983-10-14
申请人： KOBE STEEL LTD
发明人： MATSUMYA KATSUYUKI , KUMAGAI KAZUO , HAYASHIDA TSUGUO
IPC分类号： B21D43/28 , B21D43/00 , B23D33/00

10. 发明专利

JPS6083732A METHOD AND DEVICE FOR PROCESSING SHORT SIZE MATERIAL 失效
公开(公告)号：JPS6083732A
公开(公告)日：1985-05-13
申请号：JP19330683
申请日：1983-10-14
申请人： KOBE STEEL LTD
发明人： MATSUMIYA KATSUYUKI , KUMAGAI KAZUO , HAYASHIDA TSUGUO
IPC分类号： B21D43/28 , B21D43/00 , B23D33/00
摘要： PURPOSE:To improve a productivity of a cold shear by bringing only a short size material to off-line, before the final cut of a fixed size cutting by the cold shear, and arranging it in a line again at the time point when it reaches a prescribed number, and processing it. CONSTITUTION:A short size material 8a is lifted from a grooved roller by a lifter 3 and is in a carrying stop state. A transfer dog 5 is moved to the lower part of the short size material 8a, the lifter 3 is made to descend and the short size material 8a is shifted and placed onto the dog 5. Subsequently, the dog 5 is advanced to the right, and a lifting arm 25 is made lower than the upper face of the dog 5 and made to reach a running truck 4. When the dog 5 stops, the short size material 8a is shifted and placed onto the lifting arm 25. When the number of the short size materials 8a on the lifting arm 25 becomes equal to the number of grooves of the roller, the truck 4 is advanced to the left toward a carrying device 2, and the short size material 8a is shifted and placed onto the carrying device 2. The shifted and placed short size material is cut to a suitable length by a cold shear.

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