专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2000114048A COMMON-MODE FILTER 失效
公开(公告)号：JP2000114048A
公开(公告)日：2000-04-21
申请号：JP29623798
申请日：1998-10-05
申请人： KANKYO DENJI GIJUTSU KENKYUSHO , SANYO ELECTRIC CO
发明人： KAIZAKI YASUHIRO
IPC分类号： H01F27/28 , H01F17/00 , H03H7/09
摘要： PROBLEM TO BE SOLVED: To operate as a low-pass filter to a common-mode current so as to form a signal blocking band to a frequency of several hundred MHz or more and provide a transmission characteristic of low loss to a differential-mode current. SOLUTION: A pair of grounding conductor layers 6 and 11 are formed respectively on the front and rear surfaces of a laminated dielectric substrate, and a pair of linear conductors 21 and 22 are provided in parallel between the grounding conductor layers 6 and 11 in the dielectric substrate. The conductors 21 and 22 electrically connect conductor sections 7a and 8a whose patterns are formed close to and parallel to the grounding conductor layer 6, with conductor sections 9a and 10a whose patterns are formed close to and parallel to the grounding conductor layer 11 respectively.

2. 发明专利

JP2000223986A COMMON MODE FILTER 失效
公开(公告)号：JP2000223986A
公开(公告)日：2000-08-11
申请号：JP2325499
申请日：1999-01-29
申请人： KANKYO DENJI GIJUTSU KENKYUSHO , SANYO ELECTRIC CO
发明人： KAIZAKI YASUHIRO
IPC分类号： H01F17/00 , H01P1/20 , H03H7/075 , H03H7/09
摘要： PROBLEM TO BE SOLVED: To attenuate a common mode current which is an electromagnetic noise source over a wide band at an optional frequency and to minimize the loss in a differential mode current. SOLUTION: A common mode filter is provided with structure in which a pair of upper and lower conductor layers 8, 9 for grounding are formed on the front and rear surfaces of a dielectric substrate and a pair of line conductors LN1, LN2 are provided in parallel between a pair of the conductor layers 8, 9 for grounding in the dielectric substrate. Here, a pair of the line conductors LN1, LN2 are provided with a pair of conductor patterns 18, 19 at an intermediate part to mutually and electrically connect a pair of conductor patterns 16, 17 whose patterns are formed proximately and in parallel with the conductor layer 8 with a pair of conductor patterns 20, 21 whose patterns are formed proximately and in parallel with the conductor layer 9 for grounding and a pair of the conductive patterns 18, 19 at the intermediate part are provided in parallel with the conductor layers 8, 9 for grounding.

3. 发明专利

JP2000252124A COMMON MODE FILTER 失效
公开(公告)号：JP2000252124A
公开(公告)日：2000-09-14
申请号：JP4710299
申请日：1999-02-24
申请人： KANKYO DENJI GIJUTSU KENKYUSHO , SANYO ELECTRIC CO
发明人： KAIZAKI YASUHIRO , TSUDA BUNSHIRO
IPC分类号： H01F17/00 , H01F19/00 , H03H7/09
摘要： PROBLEM TO BE SOLVED: To reduce an increase in the attenuation of a common mode current a loss in a differential mode current by providing the inductor mutual induction effect of a magnetic material to a common mode filter. SOLUTION: In this filter, a pair of upper and lower grounding conductor layers 6 and 7 are formed with a dielectric material disposed therebetween, and a pair of line-like conductors LN1 and LN2 are provided between the pair of grounding conductor layers within the dielectric material to be parallel to the layers. The pair of line-like conductors LN1 and LN2 are made up of a pattern of conductor, formed close to one of the pair of grounding conductor layers 6 and 7 and parallel thereto and another pattern of conductor formed close to the other of the pair of grounding layers and parallel thereto, the pairs being electrically connected each other. Furthermore, a magnetic material 18 forming at least part of a magnetic path of magnetic flux generated by currents of the pair of line-like conductors LN1, and LN2 is disposed between the pair of grounding conductor layer 6 and 7.

4. 发明专利

JP2001339255A HIGH-FREQUENCY CIRCUIT 失效
公开(公告)号：JP2001339255A
公开(公告)日：2001-12-07
申请号：JP2001059428
申请日：2001-03-05
申请人： SANYO ELECTRIC CO
发明人： BABA SEIICHI , KAIZAKI YASUHIRO
IPC分类号： H03F1/56 , H03F1/48 , H03F3/60
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency circuit which can control the gain in a high-frequency range without using a capacitor with large occupation area nor decreasing the gain of a low-frequency range. SOLUTION: A first circuit 3 composed of a thin-film resistance 30 is connected between the collector of a transistor 100 and a power terminal and a second circuit 4 composed of a semiconductor resistor 40 is connected between the emitter and a ground terminal. The film thickness of the thin-film resistance 30 is set below the skin depth at a frequency to be compensated.

5. 发明专利

JPH09270232A MAGNETRON 失效
公开(公告)号：JPH09270232A
公开(公告)日：1997-10-14
申请号：JP10708696
申请日：1996-04-26
申请人： SANYO ELECTRIC CO
发明人： KAIZAKI YASUHIRO , SAWADA MINORU , HARADA YASOO
IPC分类号： H01J23/54
摘要： PROBLEM TO BE SOLVED: To provide a magnetron which has a simple structure and can suppress radiation (noise) of unnecessary electromagnetic waves for not only further higher harmonics than those expected conventionally and also the whole frequency in a wide frequency band including specified harmonics. SOLUTION: This magnetron comprises an anode part produced by installing veins 2 radiantly in the inner circumference of an anode cylinder 1, a cathode part having a cathode 5 installed in the center of the anode part, an output antenna lead 17 connected with a part of a vein 2, and an output side metal cylinder 13 to become a part of a vacuum wall formed in the surrounding of the output antenna lead 17. Metal plates (disks 21, 22) are electrically connected with a part of the output antenna lead 17 which is covered with the output side metal cylinder 13 and an inductor of the output antenna lead 17 and a capacitor formed between the outer circumferential ends of the metal plates 21, 22 and the output side metal cylinder constitute a low pass filter.

6. 发明专利

JPS61135111A Method of epitaxial growth of compound semiconductor 失效
标题翻译：复合半导体的外延生长方法
公开(公告)号：JPS61135111A
公开(公告)日：1986-06-23
申请号：JP25696784
申请日：1984-12-05
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU , KAIZAKI YASUHIRO
IPC分类号： C23C16/18 , H01L21/20 , H01L21/205
CPC分类号： H01L21/0262 , H01L21/02546
摘要： PURPOSE:To reduce the irregularity of concentration of impurity by activating previously the hydrogenated gas at the higher temperature than is received on the substrate region. CONSTITUTION:With the purpose of growth of Ga0.7Al0.3As film, the susceptor 3 and the preheating body 12 are heated at each prescribed temperature by the high-frequency heating. then the AsH3 gas of 10% concentration is sent into the tube 1 together with the H2 gas 5l/min, the carrier gas, from the input port 1a on the top of the reaction tube 1. The TMGaTMAl gas is flowed into the tube 1 together with the H2 gas 600ml/min from the second input port (1g). The growth of film on the substrate is completed by the effect of these gases. The stable film of crystal growth is obtained by the less As molar fraction, and the quantity of deposition of As chemical compound adhering to the susceptor is reduced. The crystal defects caused by the organic metal compound being apt to thermally decompose is also reduced. The organic metal compound thermally decomposes before arriving at the substrate and adheres on the surface of the crystal, and the crystal defects caused thereby decreases.
摘要翻译：目的：为了减少杂质浓度的不均匀性，先于氢化气体在比基片区域接收的温度高的温度下激活。构成：为了生长Ga 0.7 Al 0.3 As膜，基体3和预热体12通过高频加热在每个规定温度下加热。那么浓度为10％的AsH 3气体与来自反应管1顶部的输入口1a的H2气体一起输送到管1中，载气为载气.MTTTMA1气体流入管1 以及从第二输入口（1g）600ml / min的H2气体。这些气体的影响完成了基板上膜的生长。通过较少的As摩尔分数获得稳定的晶体生长膜，并且减少了附着在基座上的As化合物的沉积量。有机金属化合物易于分解的晶体缺陷也降低。有机金属化合物在到达衬底之前热分解并粘附在晶体的表面上，由此引起的晶体缺陷降低。

7. 发明专利

JPS61116827A Gas phase epitaxial growth apparatus 失效
标题翻译：气相外延生长装置
公开(公告)号：JPS61116827A
公开(公告)日：1986-06-04
申请号：JP23811184
申请日：1984-11-12
申请人： Sanyo Electric Co Ltd
发明人： KAIZAKI YASUHIRO
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/02395 , H01L21/02546 , H01L21/0262
摘要： PURPOSE:To realize good epitaxial growth by dividing a reaction tube in the upstream side to the center path and annular circumferencial path surrounding said center path with a certain interval, placing raw material metal in the center path, sending thereto the compound gas and supplying carrier gas to the annular circumferencial path. CONSTITUTION:A metal Ga 14 is placed in the center path 11 in the upstream side of reaction tube 10 while a GaAs substrate 15 to the down-stream side, the interior is heated with a heater 16 and H2 having passed AsCl3 18 is directly supplied 17 to the center path 11. H2S and H2 are adequately mixed with a valve 21 and is supplied from the circumferencial path 12. Temperature of center path is a little lowered by heat shielding effect of gas flow of circumferencial path 12 and interval 13 to the value of about 840 deg.C which is desirable for combination of raw material metal 14 and halogen gas. The area near the substrate 15 becomes about 700 deg.C and temperature of gas passing the circumferencial path 12 is higher than that of gas passing the center path by 10-30 deg.C. Therefore, GaAs is formed by the epitaxial growth method on the substrate 15, undesirable precipitation of crystal is not generated due to high temperature at the tube wall at the intermediate part ZONE2 of reaction tube 10 and as a result, good epitaxial growth can be realized.
摘要翻译：目的：通过将上游侧的反应管与中心路径和围绕所述中心路径的环形圆周路径以一定间隔分开来实现良好的外延生长，将原料金属放置在中心路径中，将复合气体和供应载体气体到环形圆周路径。构成：将金属Ga 14放置在反应管10的上游侧的中心路径11中，同时向下游侧的GaAs衬底15，内部用加热器16加热，并且通过AsCl 3 18的H 2被直接供给 17与中心路径11连通.H2S和H2与阀21充分混合，并从周边路径12供给。中心路径的温度通过外围路径12和区间13的气流的热屏蔽效应略微降低值为约840摄氏度，这对于原料金属14和卤素气体的组合是期望的。基板15附近的区域为约700℃，通过圆周路径12的气体的温度比通过中心路径的气体高10-30℃。因此，通过外延生长法在衬底15上形成GaAs，由于在反应管10的中间部分ZONE2的管壁处由于高温而不会产生不期望的晶体析出，结果可以实现良好的外延生长。

8. 发明专利

JP2011055122A Semiconductor device and mobile device 审中-公开
标题翻译：半导体器件和移动器件
公开(公告)号：JP2011055122A
公开(公告)日：2011-03-17
申请号：JP2009200534
申请日：2009-08-31
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KAIZAKI YASUHIRO , SAWAI TETSUO , NAKAZATO MAYUMI
IPC分类号： H03H7/09 , H01L21/3205 , H01L21/822 , H01L23/52 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is superior in transmission characteristics of differential signals and has a simple configuration.
SOLUTION: A semiconductor device 100 includes: a wiring layer 12 including a pair of differential transmission lines 26; a conductive layer 16 which has a potential fixed and has a continuous area formed of an electrically continuous conductor; a semiconductor substrate 24; a stop layer 20 which is provided between the semiconductor substrate 24 and the conductive layer 16 and has an electrically floating conductor; and insulating layers provided between the wiring layer 12, the conductive layer 16, the stop layer 20, and the semiconductor substrate 24. The pair of differential transmission lines 26 cross the conductor of the conductive layer when viewed from a lamination direction, and the stop layer 20 has a plurality of gaps formed crossing the conductor of the conductive layer 16.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种差分信号的传输特性优异且具有简单结构的半导体器件。解决方案：半导体器件100包括：布线层12，包括一对差动传输线26; 具有电位固定并具有由电连续导体形成的连续区域的导电层16; 半导体基板24; 设置在半导体衬底24和导电层16之间并具有电浮动导体的阻挡层20; 以及设置在布线层12，导电层16，阻挡层20和半导体基板24之间的绝缘层。当从层叠方向观察时，该对差动传输线26与导电层的导体交叉，并且停止层20具有与导电层16的导体交叉的多个间隙。版权所有：（C）2011，JPO和INPIT

9. 发明专利

JP2010287876A Wiring structure and optical disk apparatus 审中-公开
标题翻译：接线结构和光盘设备
公开(公告)号：JP2010287876A
公开(公告)日：2010-12-24
申请号：JP2010050603
申请日：2010-03-08
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KAIZAKI YASUHIRO , SAWAI TETSUO , KAWASAKI SUMITOSHI
IPC分类号： H05K1/02 , G11B7/12
CPC分类号： G11B7/126 , H05K1/025 , H05K1/144 , H05K1/147 , H05K2201/0792
摘要： PROBLEM TO BE SOLVED: To reduce signal loss in signal current wiring, in a wiring structure where the signal current wiring and return current wiring are mounted overlapped in a box body.
SOLUTION: The signal current wiring 10a, 10b carry signal current from a first circuit block 100 to a second circuit block 200. The return current wiring 20a carries return current from the second circuit block 200 to the first circuit block 100. The signal current wiring 10a, 10b and the return current wiring 20a are overlapped, staggered from each other in a width direction so as to form a region where the signal-current wiring 10a, 10b and a second wiring-side surface of the box body 300 face each other, without the intervention of the return current wiring 20a, between the second wiring side surface of the box body 300 and the signal current wiring 10a, 10b.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了减少信号电流布线中的信号损耗，在信号电流布线和回流布线重叠在盒体中的布线结构中。信号电流布线10a，10b将信号电流从第一电路块100传送到第二电路块200.返回电流布线20a将返回电流从第二电路块200传送到第一电路块100。信号电流布线10a，10b和返回电流布线20a在宽度方向上彼此交错地重叠，形成信号电流布线10a，10b和箱体300的第二布线侧表面的区域在箱体300的第二配线侧面与信号电流配线10a，10b之间，不需要回流电路配线20a的介入。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2005102123A Communication equipment and electronic equipment with communication functions 审中-公开
标题翻译：具有通信功能的通信设备和电子设备
公开(公告)号：JP2005102123A
公开(公告)日：2005-04-14
申请号：JP2004047901
申请日：2004-02-24
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KAIZAKI YASUHIRO , SAWAI TETSUO
IPC分类号： H03D7/14 , H03F3/191 , H04B1/18
CPC分类号： H03F3/191 , H03F2200/372
摘要： PROBLEM TO BE SOLVED: To provide communication equipment that effectively reduces interference of a neighboring frequency band and is appropriate for broadband communication.
SOLUTION: The communication equipment 10 includes, as a plurality of communication functions, an amplifier 12 for amplifying a received signal or a transmitting signal, a balloon 14 for converting an unbalanced signal to a balanced signal or converting a balanced signal to an unbalanced signal and a mixer 16 for converting a frequency. A gain reducing unit for reducing a gain of a specific frequency band is installed in at least one of the plurality of communication functions. A band rejection filter, for example, serves as a gain reducing unit and is disposed between a pair of transistors of communication functions. A plurality of band rejection filters may also be so arranged as to be distributed to the plurality of communication functions.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供有效降低相邻频带干扰的通信设备，适用于宽带通信。解决方案：通信设备10包括用于放大接收信号或发送信号的放大器12作为多个通信功能，用于将不平衡信号转换为平衡信号或将平衡信号转换为不平衡信号和用于转换频率的混频器16。用于减小特定频带的增益的增益减小单元安装在多个通信功能中的至少一个中。带阻滤波器例如用作增益减小单元，并且设置在一对通信功能晶体管之间。多个带阻滤波器也可以被布置为分布到多个通信功能。版权所有（C）2005，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式