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1. 发明专利

JPS60194531A Crystal growth method of mgo-al2o3 film 失效
标题翻译： MGO-AL2O3膜的晶体生长方法
公开(公告)号：JPS60194531A
公开(公告)日：1985-10-03
申请号：JP5166984
申请日：1984-03-16
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU
IPC分类号： H01L21/316 , H01L21/86
CPC分类号： H01L21/316
摘要： PURPOSE:To control each speed of Al and Mg atoms independently by separately using an aluminum organic compound and a magnesium organic compound as supply sources for Al atoms and Mg atoms. CONSTITUTION:The molecules of an aluminum organic compound and the molecules of a magnesium organic compound fed into a region B are thermally decomposed in the vicinity of a silicon wafer 15, and each changed into metallic aluminum and metallic magnesium, and these metallic aluminum and magnesium react with O2 gas separately flowed in a reaction furnace 11 while using H2 gas as a carrier gas and are turned into MgO and Al2O3, and an MgO.Al2O3 crystal, a mol ratio thereof is controlled, is grown on the surface of the silicon wafer 15 in an epitaxial manner. Trimethyl aluminum, triethyl aluminum or the like is used as the aluminum organic compound and a magnesiumalkyl compound, such as dimethyl magnesium, diethyl magnesium, etc., dicyclopentadienyl magnesium, diphenyl magnesium-ethylate-aduct or the like as the magnesium organic compound respectively.
摘要翻译：目的：通过单独使用铝有机化合物和镁有机化合物作为Al原子和Mg原子的供应源，独立地控制Al和Mg原子的每个速度。构成：将铝有机化合物的分子和供给到区域B的镁有机化合物的分子在硅晶片15附近热分解，分别变成金属铝和金属镁，这些金属铝和镁与使用H 2气体作为载气的反应炉11中分别流动的O 2气体反应，并且变成MgO和Al 2 O 3，并且在硅晶片的表面上生长其摩尔比的MgO·Al 2 O 3晶体 15以外延方式。三甲基铝，三乙基铝等作为铝有机化合物，分别使用二甲基镁，二乙基镁等镁烷基化合物，二环戊二烯基镁，二苯基镁 - 乙酸酯 - 碳酸酯等作为镁有机化合物。

2. 发明专利

JPS6175573A Manufacture of light emitting diode 失效
标题翻译：发光二极管的制造
公开(公告)号：JPS6175573A
公开(公告)日：1986-04-17
申请号：JP19821784
申请日：1984-09-20
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU
IPC分类号： H01L33/30 , H01L33/40
CPC分类号： H01L33/30 , H01L33/005
摘要： PURPOSE:To form a green light emitting diode which has high external quantum a efficiency, high intensity and high characteristic by forming the diode made of a direction transition type GaxIn1-xP P-N junction on a sphalerite crystal substrate. CONSTITUTION:A sphalerite crystal substrate having 5.565Angstrom to 5.577Angstrom of lattice constant such as 100 plane N type GaAs1-xPx0.38
摘要翻译：目的：通过在闪锌矿晶体基板上形成由方向转变型GaxIn1-xP P-N结形成的二极管，形成具有高外部量子效率，高强度和高特性的绿色发光二极管。构成：具有5.565至5.577埃的晶格常数的闪锌矿晶体衬底，例如在2至5度倾斜的100平面N型GaAs1-xPx0.38 <= x <= 0.44。在（110）方向上放置在基板基体4上，反应管1中的源极区域A和生长区域B的温度在850℃和740℃下被抑制并保持。将HC供给到源室2a，2b，PH3，将Te（C2H5）2供给到管1中，并且生长Te掺杂的N型Ga 0.72 In 0.2 P 2的晶体。 Zn扩散，形成p型Ga0.72In0.28P以形成PN结，形成前表面电极和背面电极，并且形成由Ga0.72In0.28P的PN结形成的发光二极管制造方向转变型半导体。

3. 发明专利

JPS61135111A Method of epitaxial growth of compound semiconductor 失效
标题翻译：复合半导体的外延生长方法
公开(公告)号：JPS61135111A
公开(公告)日：1986-06-23
申请号：JP25696784
申请日：1984-12-05
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU , KAIZAKI YASUHIRO
IPC分类号： C23C16/18 , H01L21/20 , H01L21/205
CPC分类号： H01L21/0262 , H01L21/02546
摘要： PURPOSE:To reduce the irregularity of concentration of impurity by activating previously the hydrogenated gas at the higher temperature than is received on the substrate region. CONSTITUTION:With the purpose of growth of Ga0.7Al0.3As film, the susceptor 3 and the preheating body 12 are heated at each prescribed temperature by the high-frequency heating. then the AsH3 gas of 10% concentration is sent into the tube 1 together with the H2 gas 5l/min, the carrier gas, from the input port 1a on the top of the reaction tube 1. The TMGaTMAl gas is flowed into the tube 1 together with the H2 gas 600ml/min from the second input port (1g). The growth of film on the substrate is completed by the effect of these gases. The stable film of crystal growth is obtained by the less As molar fraction, and the quantity of deposition of As chemical compound adhering to the susceptor is reduced. The crystal defects caused by the organic metal compound being apt to thermally decompose is also reduced. The organic metal compound thermally decomposes before arriving at the substrate and adheres on the surface of the crystal, and the crystal defects caused thereby decreases.
摘要翻译：目的：为了减少杂质浓度的不均匀性，先于氢化气体在比基片区域接收的温度高的温度下激活。构成：为了生长Ga 0.7 Al 0.3 As膜，基体3和预热体12通过高频加热在每个规定温度下加热。那么浓度为10％的AsH 3气体与来自反应管1顶部的输入口1a的H2气体一起输送到管1中，载气为载气.MTTTMA1气体流入管1 以及从第二输入口（1g）600ml / min的H2气体。这些气体的影响完成了基板上膜的生长。通过较少的As摩尔分数获得稳定的晶体生长膜，并且减少了附着在基座上的As化合物的沉积量。有机金属化合物易于分解的晶体缺陷也降低。有机金属化合物在到达衬底之前热分解并粘附在晶体的表面上，由此引起的晶体缺陷降低。

4. 发明专利

JPS61134013A Compound semiconductor crystal growth method 失效
标题翻译：化合物半导体晶体生长方法
公开(公告)号：JPS61134013A
公开(公告)日：1986-06-21
申请号：JP25622684
申请日：1984-12-04
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU
IPC分类号： H01L21/314 , H01F37/00 , H01L21/205
CPC分类号： H01L21/0262 , H01L21/02546
摘要： PURPOSE:To bring Ga atoms and Al atoms depositing on a substrate to the state in which both atoms abound in reactivity, and to enable growth at a low temperature by electron-exciting a raw material gas by beams proper to molecular absorption. CONSTITUTION:H2 gas as a carrier gas is fed previously into a reaction pipe 1 at the rate of 10l/min from a third introducing port 2c, a susceptor 3 on which a substrate 4 is placed is heated and held at 470-750 deg.C, a temperature is stabilized and a first light source 8a and a second light source 8b are started, and each laser beam is induced to first and second introducing ports 2a, 2b through mirrors 9a, 9b. AsH3 at the rate of 4.6X10 mol/min is added into H2 gas at the rate of 10l/min beforehand fed from the third introducing port 2c, and induced into the reaction pipe 1. TMG at the rate of 0.7X10 mol/min and H2 gas for carriers at the rate of 0.5l/min are fed from the first introducing port 2a, TMA at the rate of 0.2X10 mol/min and H2 gas for carriers at the rate of 1l/min are supplied from the second introducing port 2b, and a crystal is grown. Accordingly, a Ga0.7Al0.3As crystal obtained has the large mobility of the crystal (maximum 3,220cm /V.S) and holds high mobility up to a substrate temperature of approximately 580 deg.C.
摘要翻译：目的：将Ga原子和Al原子沉积在基底上，使其中两个原子都具有反应活性，并且能够通过用分子吸收的光束对原料气进行电子激发，从而在低温下生长。构成：将作为载气的H2气体从第三导入口2c以10l / min的速度预先供给到反应管1中，将其上放置基板4的基座3加热并保持在470〜750度。如图C所示，温度稳定，第一光源8a和第二光源8b启动，每个激光束通过反射镜9a，9b被感应到第一和第二导入口2a，2b。将以4.6×10 -3 mol / min的速率将AsH 3以预先从第三导入口2c进料的10l / min的速度加入到H 2气体中，并诱导到反应管1中。TMG以0.7×10 以-4.0mol / min的速率和0.5l / min速率的载体的H2气体以0.2×10 -4 mol / min的速率从第一引入口2a，TMA以及载体的H2气体从第二导入口2b供给1l / min的速度，生长晶体。因此，获得的Ga 0.7 Al 0.3 As晶体具有大的晶体迁移率（最大为3,220cm 2 / V.S），并保持高达560摄氏度的衬底温度的高迁移率。

5. 发明专利

JPS6185862A Integrated type gallium arsenic schottky diode 失效
标题翻译：集成型GALLIUM ARSENIC肖特基二极管
公开(公告)号：JPS6185862A
公开(公告)日：1986-05-01
申请号：JP20770284
申请日：1984-10-03
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU
IPC分类号： H01L29/47 , H01L29/872
CPC分类号： H01L29/872
摘要： PURPOSE:To obtain an integrated type gallium arsenic Schottky diode with an easy isolation by making a part adjoining to the buffer layer of a substrate a high resistance layer of an AlxGa1-xAs and by connecting this high resistance layer with an insulating region for element isolation. CONSTITUTION:A high resistance layer 12 is an AlxGa1-xAs film formed on a substrate body 11. After buffer layers 21 and 31 and operating layers 22 and 32 are gotten an epitaxial growth in order on a substrate 1, formation of an element isolating channel 7 is formed through selectively opening the windows of ohmic electrodes 23 and 33 in the operating layers 22 and 32. These opening are selectively done to reach the high resistance layer 12 of the sub strate 1 with the plasma etching technique using a CCl2F2 gas or the chemical etching technique of H2O2-NH4OH. An insulating material in the element isolat ing channel 7 is formed at the same time of forming an insulating film 5.
摘要翻译：目的：为了获得一种易于隔离的集成型镓砷肖特基二极管，通过使与Al衬底的缓冲层相邻的部分与Al x Ga 1-x As的高电阻层连接，并将该高电阻层与用于元件隔离的绝缘区域连接。构成：高电阻层12是在衬底主体11上形成的Al x Ga 1-x As膜。在衬底1上依次获得缓冲层21和31以及工作层22和32的外延生长之后，形成元件隔离沟道通过选择性地打开操作层22和32中的欧姆电极23和33的窗口来形成图7。这些开口选择性地通过使用CCl 2 F 2气体的等离子体蚀刻技术到达子台1的高电阻层12，或者 H 2 O 2 -NH 4 OH的化学蚀刻技术。在形成绝缘膜5的同时形成元件隔离通道7中的绝缘材料。

6. 发明专利

JPS6168396A Growing method of mgo-al2o3 film crystal 失效
标题翻译： MGO-Al2O3薄膜晶体的生长方法
公开(公告)号：JPS6168396A
公开(公告)日：1986-04-08
申请号：JP18687684
申请日：1984-09-06
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU
IPC分类号： C30B25/02 , C30B29/26 , H01L21/205
CPC分类号： C30B25/02 , C30B29/26
摘要： PURPOSE:To execute exactly the supply of Al atoms and to improve the quality of an MgO.Al2O3 film crystal by cracking thermally an Al org. compd. and Mg compd. thereby executing epitaxial growth. CONSTITUTION:CO2+H2 is fed to the inside of a reaction tube 11 and H2 as a carrier gas is fed to the magnesium compd. 14 of a pipe 11a. The flow rate of the gaseous H2 to a bubbler 16 is regulated by a mass flow meter 20 to control the rate of the aluminum compd. 17 to be fed from the bubbler 16 to the reaction furnace. The molecules of the aluminum org. compd. and the molecules of the magnesium compd. supplied to the region B of the furnace 11 in such a manner are thermally cracked near a silicon water 15 and form respectively metallic aluminum and metallic magnesium. The metallic aluminum and magnesium form MgO.Al2O3 by reacting with the gaseous O2 passed with the separate gaseous H2 as the carrier gas in the furnace 11 an the MgO.Al2O3 crystal controlled in molar ratio is epitaxially grown on the surface of the silicon wafer 15.
摘要翻译：目的：精确地执行Al原子的供应，并通过Al组织裂化来提高MgO.Al2O3膜晶体的质量。 compd。和镁化合物从而执行外延生长。构成：将CO 2 + H 2供给到反应管11的内部，将H 2作为载气供给至镁化合物。 14的管11a。气体H 2向起泡器16的流速由质量流量计20调节以控制铝合金的速率。 17从起泡器16供给到反应炉。铝组分的分子。 compd。和镁化合物的分子。以这样的方式供应到炉11的区域B在硅水15附近被热裂化，并且分别形成金属铝和金属镁。金属铝和镁通过与在炉11中与作为载气的单独气态H 2气化的气态O 2反应而形成MgO·Al 2 O 3，在硅晶片15的表面上外延生长摩尔比控制的MgO·Al 2 O 3晶体。

7. 发明专利

JPS6199346A Manufacture of compound semiconductor device 失效
标题翻译：化合物半导体器件的制造
公开(公告)号：JPS6199346A
公开(公告)日：1986-05-17
申请号：JP22080484
申请日：1984-10-19
申请人： Sanyo Electric Co Ltd
发明人： NAKAMOTO HIROYUKI , MAEDA KATSUNOBU
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76
摘要： PURPOSE:To manufacture a compound semiconductor device having a planar structure without using an ion implantation method, by epitaxially growing a compound semiconductor layer having a desired conducting type and carrier concentration on an epitaxial layer, and forming active element layers, which are isolated to each other. CONSTITUTION:On a compound semiconductor substrate 1, the following processes are performed. An epitaxial layer 2 comprising a compound semiconductor having high resistance is formed on the epitaxial layer 2. With the insulating film 3 as a mask, the epitaxial layer 2 is etched to a desired depth. A compound semiconductor layer 4 having a desired conducting type and carrier concentration is epitaxially grown on the epitaxial layer. Thus the active elements layers 4, which are isolated to each other are formed. In this way, the structure of the compound semiconductor device including the active layer, which is epitaxially grown, can be made to be a planar structure. Therefore, the optical integrated circuit element, in which high integration is implemented, can be manufactured.
摘要翻译：目的：为了制造具有平面结构而不使用离子注入法的化合物半导体器件，通过在外延层上外延生长具有期望的导电类型和载流子浓度的化合物半导体层，并形成活性元素层，其分离为每个其他。构成：在化合物半导体基板1上，进行以下处理。在外延层2上形成包含具有高电阻的化合物半导体的外延层2.以绝缘膜3作为掩模，将外延层2蚀刻到期望的深度。在外延层上外延生长具有期望的导电类型和载流子浓度的化合物半导体层4。因此形成彼此隔离的有源元件层4。以这种方式，可以将包括外延生长的有源层的化合物半导体器件的结构制成平面结构。因此，可以制造实现高集成度的光集成电路元件。

8. 发明专利

JPS6144424A Vapor growth of compound semiconductor 失效
标题翻译：化合物半导体的蒸气生长
公开(公告)号：JPS6144424A
公开(公告)日：1986-03-04
申请号：JP16766784
申请日：1984-08-09
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C23C16/44
摘要： PURPOSE:To enable the formation of a stable mixed crystal film with less As molar fraction by bringing a raw material gas on a crystal substrate through a higher temperature region than the temperature of the substrate befoe it is introduced on the crystal substrate. CONSTITUTION:A heating table 4 is rotated, high frequency power is applied to a coil 5, the heating table 4 and a heating block 2 are each heated to a required temperature and a raw material gas is introduced from a supply nozzle 1f with a carrier gas. The raw material gas is heated by the block 2, the activation is increased, introduced near a crystal substrate 3 on the heating table 4 and Ga and Al in trimethyl Ga and trimethyl Al on the substrate 3 are effectively absorbed in the substrate 3. This can grow high quality AlxGa1-x mixed crystal with comparatively little AsH3 raw material gas. Incidentally, the heating temperature of the block 2 shall be made higher than the temperature of the heating table 4.
摘要翻译：目的：为了通过将晶体基板上的原料气体比基板的温度更高的温度区域形成具有较少As摩尔分数的稳定的混合晶体膜，将其导入晶体基板。构成：加热台4旋转，将高频电力施加到线圈5，加热台4和加热块2各自加热至所需温度，原料气体从供给喷嘴1f与载体加油站。原料气体被块体2加热，在加热台4上的晶体基板3附近引入激活，在基板3上的三甲基Ga和三甲基铝中的Ga和Al被有效地吸收在基板3上。可以生产具有较少AsH3原料气体的高品质AlxGa1-x混晶。顺便提及，块2的加热温度应高于加热台4的温度。

9. 发明专利

JPS6175531A Formation of crystal for insulating film 失效
标题翻译：形成绝缘膜晶体
公开(公告)号：JPS6175531A
公开(公告)日：1986-04-17
申请号：JP19821884
申请日：1984-09-20
申请人： Sanyo Electric Co Ltd
发明人： MAEDA KATSUNOBU
IPC分类号： H01L21/314
CPC分类号： H01L21/314
摘要： PURPOSE:To form Ga1-xAlxAs (0 OMEGA.cm with good reproducibility and form an insulation film of a high resistance in the order of 10 in maximum by mixing O2, water and CO2 into reaction gas and controlling amount of mixed O2, water and CO2. CONSTITUTION:A garaphite receptor 2 is provided within a glass reaction pipe 1, GaAs substrate 3 which is a semiconductor substrate is placed on the receptor 2, and the substrate 3 is heated up to the predetermined temperature and held thereto by heating the receptor 2 with a resistance heating coil 4. The oxygen gas O2, water, carbonic acid gas CO2 are mixed into the reaction pipe 1, in addition to the reaction gases of trymethylgallium Ga(CH3)3(TMG), trimethyl aluminium Al(CH3)delta3CHI(TMA), arsine AsH, hydrogen gas through the supply pipe 5 in order to cause the crystal for insulation film of Ga1-xAlxAs to grown on the GAAs substrate 3. As explained above, Ga1-xAlxAs can be adjusted with good reproducibility with the specific resistance in the order of 10-10 OMEGA.cm by controlling amount of O2, water and CO2 to be mixed.
摘要翻译：目的：以良好的重现性形成电阻率为10〜10 -7ΩEGA·cm的Ga1-xAlxAs（0 的高电阻绝缘膜通过将O 2，水和CO 2混合到反应气体中并控制混合的O 2，水和CO 2的量。构成：在玻璃反应管1内设置硅铝石受体2，将作为半导体基板的GaAs衬底3放置在受体2上，并将衬底3加热至预定温度，并通过用受体2加热保持电阻加热线圈4.除了三甲基镓Ga（CH 3）3（TMG），三甲基铝Al（CH 3）δ3CHI（三甲基铝） TMA），胂AsH，通过供给管5的氢气，以使Ga1-xAlxAs的绝缘膜的晶体在GAAs衬底3上生长。如上所述，Ga1-xAlxAs可以以特定的重现性通过控制待混合的O2，水和二氧化碳的数量，10-10 OMEGA.cm的数量级。

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